JPH073657Y2 - 半導体レーザ製造用半導体基板 - Google Patents
半導体レーザ製造用半導体基板Info
- Publication number
- JPH073657Y2 JPH073657Y2 JP1985034355U JP3435585U JPH073657Y2 JP H073657 Y2 JPH073657 Y2 JP H073657Y2 JP 1985034355 U JP1985034355 U JP 1985034355U JP 3435585 U JP3435585 U JP 3435585U JP H073657 Y2 JPH073657 Y2 JP H073657Y2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- cutting
- chip
- bonded
- laser chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 91
- 239000000758 substrate Substances 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000005520 cutting process Methods 0.000 claims description 55
- 239000008188 pellet Substances 0.000 description 14
- 238000009826 distribution Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 230000017525 heat dissipation Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- AZUYLZMQTIKGSC-UHFFFAOYSA-N 1-[6-[4-(5-chloro-6-methyl-1H-indazol-4-yl)-5-methyl-3-(1-methylindazol-5-yl)pyrazol-1-yl]-2-azaspiro[3.3]heptan-2-yl]prop-2-en-1-one Chemical compound ClC=1C(=C2C=NNC2=CC=1C)C=1C(=NN(C=1C)C1CC2(CN(C2)C(C=C)=O)C1)C=1C=C2C=NN(C2=CC=1)C AZUYLZMQTIKGSC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985034355U JPH073657Y2 (ja) | 1985-03-11 | 1985-03-11 | 半導体レーザ製造用半導体基板 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1985034355U JPH073657Y2 (ja) | 1985-03-11 | 1985-03-11 | 半導体レーザ製造用半導体基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61151363U JPS61151363U (en, 2012) | 1986-09-18 |
| JPH073657Y2 true JPH073657Y2 (ja) | 1995-01-30 |
Family
ID=30537646
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1985034355U Expired - Lifetime JPH073657Y2 (ja) | 1985-03-11 | 1985-03-11 | 半導体レーザ製造用半導体基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH073657Y2 (en, 2012) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS50153862U (en, 2012) * | 1974-06-07 | 1975-12-20 | ||
| JPS58173880A (ja) * | 1982-04-07 | 1983-10-12 | Sony Corp | 発光素子の取付け方法 |
| JPS5996789A (ja) * | 1982-11-25 | 1984-06-04 | Nec Corp | 光半導体装置 |
-
1985
- 1985-03-11 JP JP1985034355U patent/JPH073657Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61151363U (en, 2012) | 1986-09-18 |
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