JPH07307386A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPH07307386A JPH07307386A JP6098548A JP9854894A JPH07307386A JP H07307386 A JPH07307386 A JP H07307386A JP 6098548 A JP6098548 A JP 6098548A JP 9854894 A JP9854894 A JP 9854894A JP H07307386 A JPH07307386 A JP H07307386A
- Authority
- JP
- Japan
- Prior art keywords
- antifuse
- integrated circuit
- semiconductor integrated
- circuit device
- current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6098548A JPH07307386A (ja) | 1994-05-12 | 1994-05-12 | 半導体集積回路装置の製造方法 |
TW084103793A TW283789B (enrdf_load_stackoverflow) | 1994-05-12 | 1995-04-18 | |
KR1019950009647A KR950034685A (ko) | 1994-05-12 | 1995-04-24 | 반도체 집적회로장치의 제조방법 |
CN95106069A CN1123956A (zh) | 1994-05-12 | 1995-05-12 | 制造半导体集成电路器件的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6098548A JPH07307386A (ja) | 1994-05-12 | 1994-05-12 | 半導体集積回路装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07307386A true JPH07307386A (ja) | 1995-11-21 |
Family
ID=14222749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6098548A Pending JPH07307386A (ja) | 1994-05-12 | 1994-05-12 | 半導体集積回路装置の製造方法 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPH07307386A (enrdf_load_stackoverflow) |
KR (1) | KR950034685A (enrdf_load_stackoverflow) |
CN (1) | CN1123956A (enrdf_load_stackoverflow) |
TW (1) | TW283789B (enrdf_load_stackoverflow) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100328709B1 (ko) * | 1999-07-07 | 2002-03-20 | 박종섭 | 프로그래밍 부위 형성방법 |
US7271076B2 (en) * | 2003-12-19 | 2007-09-18 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device |
CN101562151B (zh) * | 2008-04-15 | 2012-04-18 | 和舰科技(苏州)有限公司 | 具有金属硅化物的半导体结构及形成金属硅化物的方法 |
-
1994
- 1994-05-12 JP JP6098548A patent/JPH07307386A/ja active Pending
-
1995
- 1995-04-18 TW TW084103793A patent/TW283789B/zh active
- 1995-04-24 KR KR1019950009647A patent/KR950034685A/ko not_active Withdrawn
- 1995-05-12 CN CN95106069A patent/CN1123956A/zh active Pending
Also Published As
Publication number | Publication date |
---|---|
TW283789B (enrdf_load_stackoverflow) | 1996-08-21 |
KR950034685A (ko) | 1995-12-28 |
CN1123956A (zh) | 1996-06-05 |
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