JPH0728123B2 - Ceramic wiring board manufacturing method - Google Patents
Ceramic wiring board manufacturing methodInfo
- Publication number
- JPH0728123B2 JPH0728123B2 JP63153936A JP15393688A JPH0728123B2 JP H0728123 B2 JPH0728123 B2 JP H0728123B2 JP 63153936 A JP63153936 A JP 63153936A JP 15393688 A JP15393688 A JP 15393688A JP H0728123 B2 JPH0728123 B2 JP H0728123B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- conductor
- conductor layer
- paste
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
Landscapes
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明はスルーホール孔を有するセラミック配線基板の
製造方法に関するものである。TECHNICAL FIELD The present invention relates to a method for manufacturing a ceramic wiring board having through-holes.
従来の技術 従来、スルーホール孔を有するセラミック配線基板は、
セラミック基板の両面に厚膜導体ペーストを直接スルー
ホール印刷することにより導体層を形成していた。Conventional Technology Conventionally, a ceramic wiring board having a through hole is
The conductor layers were formed by directly through-hole printing thick-film conductor paste on both sides of the ceramic substrate.
以下図面を参照しながら、上述した従来のスルーホール
孔を有するセラミック配線基板の一例について説明す
る。第5図は銅を導体材料に使用したスルーホール孔を
有するセラミック配線基板の断面図、第6図はその製造
工程図である。An example of the above-described conventional ceramic wiring board having through-holes will be described below with reference to the drawings. FIG. 5 is a sectional view of a ceramic wiring board having through-holes using copper as a conductor material, and FIG. 6 is a manufacturing process diagram thereof.
第5図において、7はセラミック基板、2はスルーホー
ル孔、6は銅導体層である。In FIG. 5, 7 is a ceramic substrate, 2 is a through hole hole, and 6 is a copper conductor layer.
第6図において、まずスルーホール孔を有するセラミッ
ク焼成済基板の片面に厚膜導体ペーストで未焼成導体層
を形成する。この時、スルーホール孔内にも同時に導体
層をスルーホール形成する。次にセラミック焼成済基板
の他の片面を厚膜導体ペーストで同様に未焼成導体層を
形成する。この時、先にセラミック焼成済基板の片面か
らスルーホール形成した導体層に接続するように導体層
をスルーホール形成する。そして前記未焼成導体層を焼
成して、セラミック配線基板を得る。In FIG. 6, first, an unsintered conductor layer is formed of a thick film conductor paste on one surface of a ceramics sintered substrate having through holes. At this time, the conductor layer is simultaneously formed in the through hole. Next, an unsintered conductor layer is similarly formed on the other surface of the ceramic-sintered substrate with a thick film conductor paste. At this time, the conductor layer is formed with a through hole so as to be connected to the conductor layer with the through hole formed from one surface of the ceramic fired substrate. Then, the unfired conductor layer is fired to obtain a ceramic wiring board.
発明が解決しようとする課題 しかしながら、スルーホール孔内壁面に形成される導体
の膜厚は、スルーホールのエッジ部分が薄くなりやすく
膜厚を精密に制御しないと導体の焼成時に起こる体積収
縮によりスルーホール孔のエッジ部分に断線が生じやす
いという問題があった。このとき厚膜導体ペーストとし
ては、銅導体を得ようとする場合は一般に銅ペーストが
用いられるが、その焼成条件に微妙な雰囲気調整を必要
とするので焼成が困難であるため、脱バインダ処理、還
元処理、焼成処理と微妙な雰囲気調整を必要とせず容易
に銅導体が得られる酸化銅ペーストを用いた場合、還元
−焼成時の体積収縮は酸化銅ペーストのほうが大きいの
で、さらに断線のないスルーホール形成は困難であっ
た。However, the film thickness of the conductor formed on the inner wall surface of the through hole is apt to be thin due to the volume contraction that occurs during firing of the conductor unless the film thickness is precisely controlled because the edge portion of the through hole tends to be thin. There is a problem that disconnection is likely to occur at the edge portion of the hole hole. At this time, as the thick-film conductor paste, when a copper conductor is to be obtained, a copper paste is generally used, but since firing is difficult because it requires delicate atmosphere adjustment for firing conditions, binder removal treatment, When using a copper oxide paste that can easily obtain a copper conductor without requiring a delicate atmosphere adjustment such as a reduction treatment or a firing treatment, the volume shrinkage during reduction-firing is larger in the copper oxide paste, so there is no breakthrough. Hole formation was difficult.
そこで、本発明は、導体の焼成時に起こる体積収縮によ
ってもスルーホール孔のエッヂ部分に断線が生じないス
ルーホール孔を有するセラミック配線基板を提供するも
のである。Therefore, the present invention provides a ceramic wiring board having a through hole hole in which the edge portion of the through hole hole is not broken even if the volume contraction occurs during firing of the conductor.
課題を解決するための手段 この課題を解決するために本発明は、スルーホール孔を
有するセラミック基板のスルーホール孔周縁部および内
壁に、連続して絶縁ペーストで未焼成絶縁層を形成する
工程と、前記セラミック基板の両面をスルーホール接続
するように、前記未焼成絶縁層上に卑金属の酸化物を主
成分とする導体ペーストで導体層を形成する工程と、前
記導体層を形成したセラミック基板を大気中もしくは酸
化性雰囲気中でかつ前記絶縁および導体ペーストに含有
される有機成分を分解するに充分な温度で加熱処理した
後、還元性雰囲気中でかつ前記導体層中の卑金属の酸化
物を卑金属に還元するに充分な温度で加熱処理し、さら
に中性雰囲気中で前記卑金属の融点以下でかつ前記導体
層および未焼成絶縁層が焼結する温度以上で加熱処理す
る工程とを有するものである。Means for Solving the Problem In order to solve the problem, the present invention relates to a step of continuously forming an unfired insulating layer with an insulating paste on a peripheral edge portion and an inner wall of a through hole of a ceramic substrate having a through hole. A step of forming a conductor layer on the unsintered insulating layer with a conductor paste containing an oxide of a base metal as a main component so that both surfaces of the ceramic substrate are through-hole connected; and a ceramic substrate on which the conductor layer is formed. After heat treatment in the air or in an oxidizing atmosphere and at a temperature sufficient to decompose the organic components contained in the insulating and conductive paste, the base metal oxide in the conductive layer is reduced to a base metal in a reducing atmosphere. Heat treatment at a temperature sufficient to reduce the temperature to a temperature below the melting point of the base metal in a neutral atmosphere and above the temperature at which the conductor layer and the green insulating layer sinter. A heat treatment step.
作用 この構成により、スルーホール孔を有するセラミック基
板のスルーホール孔に未焼成絶縁層をスルーホール形成
した後、前記未焼成絶縁層上にスルーホール接続により
未焼成導体層を形成したスルーホール孔を有するセラミ
ック基板の両面をスルーホール接続するようにスルーホ
ール孔周縁部および内壁に、卑金属の酸化物を主成分と
する導体ペーストで未焼成導体層を形成して前記未焼成
絶縁層と未焼成導体層を同時に焼成するので、導体層が
焼成収縮するとともに絶縁層も同時に収縮することで導
体の焼成時に起こる体積収縮を緩和し、導体のスルーホ
ール孔部分に断線は生じない。With this configuration, after the unfired insulating layer is formed in the through hole of the ceramic substrate having the through hole, the through hole is formed on the unfired insulating layer by the through hole connection to form the unfired conductor layer. The unfired insulating layer and the unfired conductor are formed by forming an unfired conductor layer with a conductor paste containing a base metal oxide as a main component on the peripheral portion and the inner wall of the through hole so as to connect both sides of the ceramic substrate to the through hole. Since the layers are fired at the same time, the conductor layer is fired and contracted, and the insulating layer is also simultaneously contracted, so that volume contraction that occurs during firing of the conductor is mitigated, and no breakage occurs in the through-hole portion of the conductor.
実施例 (実施例1) 本発明の実施例の一つであるスルーホール孔を有するセ
ラミック配線基板の断面図を第1図に、製造工程図を第
2図に示す。Example (Example 1) A sectional view of a ceramic wiring substrate having through-holes, which is one of the examples of the present invention, is shown in FIG. 1, and a manufacturing process diagram thereof is shown in FIG.
第1図において、1はアルミナ基板、2はスルーホール
孔、3が銅導体層であり、銅導体層3の下地に絶縁層4
が設けられている。In FIG. 1, 1 is an alumina substrate, 2 is a through hole, 3 is a copper conductor layer, and an insulating layer 4 is provided as a base of the copper conductor layer 3.
Is provided.
第2図において、スルーホール孔を有するアルミナ基板
のスルーホール孔周縁部および内壁に、厚膜絶縁ペース
トで未焼成絶縁層をスクリーン印刷により形成した後、
前記スルーホール孔を有するアルミナ基板の両面をスル
ーホール接続するように所望の領域に、銅の酸化物を主
成分とする厚膜導体ペーストで未焼成酸化銅導体層をス
クリーン印刷により形成した。その後、未焼成酸化銅導
体層を形成したアルミナ基板1を大気中500〜800℃で加
熱処理し、ペースト中に含有される有機成分を分解除去
した後、窒素ガスに5〜20%の水素ガスを混入した混合
ガス雰囲気中300〜500℃で加熱処理し、酸化銅を金属銅
に還元した。そして窒素ガス雰囲気中850〜950℃で加熱
処理し、未焼成絶縁層と未焼成銅導体層を同時に焼成し
た。なお、絶縁ペーストは900℃で焼成可能な低温焼結
ガラス粉末とアルミナ粉末の混合粉末を主成分とし、ブ
チラール樹脂を酪酸エステル系の溶剤で溶かしたビヒク
ルを加えて三本ロールで混練して作成した。導体ペース
トは酸化銅を主成分とし、ブチラール樹脂を酪酸エステ
ル系の溶剤で溶かしたビヒクルを加えて三本ロールで混
練して作成した。In FIG. 2, after forming an unsintered insulating layer with a thick film insulating paste on the peripheral portion and the inner wall of the through hole of the alumina substrate having the through hole by screen printing,
An unsintered copper oxide conductor layer was formed by screen printing with a thick film conductor paste containing copper oxide as a main component in a desired region so that both surfaces of the alumina substrate having the through hole holes were through-hole connected. After that, the alumina substrate 1 on which the unsintered copper oxide conductor layer is formed is heat-treated in the air at 500 to 800 ° C. to decompose and remove the organic components contained in the paste, and then nitrogen gas is added to 5 to 20% hydrogen gas. Heat treatment was performed at 300-500 ° C in a mixed gas atmosphere containing copper to reduce copper oxide to metallic copper. And it heat-processed at 850-950 degreeC in nitrogen gas atmosphere, and baked the unbaked insulating layer and the unbaked copper conductor layer simultaneously. The insulating paste is made by mixing a low-temperature sintered glass powder that can be fired at 900 ° C and a powder of alumina powder as the main component, adding a vehicle in which butyral resin is dissolved in a butyrate ester solvent, and kneading with a three-roll mill. did. The conductor paste was prepared by adding a vehicle having copper oxide as a main component and a butyral resin dissolved in a butyric acid ester solvent and kneading with a three-roll mill.
この実施例によれば、導体層の焼成と同時に絶縁層も焼
成するのでスルーホール孔部分に断線が生じない。ま
た、導体材料として卑金属である銅が得られる。According to this embodiment, the conductor layer is fired and the insulating layer is fired at the same time, so that no disconnection occurs in the through hole portion. Further, copper, which is a base metal, can be obtained as the conductor material.
(実施例2) 本発明の実施例の一つであるスルーホール孔を有するセ
ラミック配線基板の断面図を第3図に、製造工程図を第
4図に示す。(Embodiment 2) A sectional view of a ceramic wiring board having through-holes, which is one of the embodiments of the present invention, is shown in FIG. 3, and a manufacturing process drawing is shown in FIG.
第3図において1はアルミナ基板、2はスルーホール
孔、5はニッケル導体層であり、ニッケル導体層5の下
地に絶縁層4が設けられている。In FIG. 3, 1 is an alumina substrate, 2 is a through-hole, 5 is a nickel conductor layer, and an insulating layer 4 is provided under the nickel conductor layer 5.
第4図において、スルーホール孔を有するアルミナ基板
のスルーホール孔周縁部および内壁に、厚膜絶縁ペース
トで未焼成絶縁層をスクリーン印刷により形成した後、
前記スルーホール孔を有するアルミナ基板の両面をスル
ーホール接続するように所望の領域に、ニッケルの酸化
物を主成分とする厚膜導体ペーストで未焼成酸化ニッケ
ル導体層をスクリーン印刷により形成した。その後、未
焼成酸化ニッケル導体層を形成したアルミナ基板1を大
気中500〜800℃で加熱処理し、ペースト中に含有される
有機成分を分解除去した後、窒素ガスに5〜20%の水素
ガスを混入した混合ガス雰囲気中300〜600℃で加熱処理
し、酸化ニッケルを金属ニッケルに還元した。そして窒
素ガス雰囲気中850〜950℃で加熱処理し、未焼成絶縁層
と未焼成ニッケル導体層を同時に焼成した。なお、絶縁
ペーストは900℃で焼成可能な低温焼結ガラス粉末とア
ルミナ粉末の混合粉末を主成分とし、ブチラール樹脂を
酪酸エステル系の溶剤で溶かしたビヒクルを加えて三本
ロールで混練して作成した。導体ペーストは酸化ニッケ
ルを主成分とし、ブチラール樹脂を酪酸エステル系の溶
剤で溶かしたビヒクルを加えて三本ロールで混練して作
成した。In FIG. 4, after forming an unsintered insulating layer with a thick film insulating paste by screen printing on the peripheral portion and the inner wall of the through hole of the alumina substrate having the through hole,
An unsintered nickel oxide conductor layer was formed by screen printing from a thick film conductor paste containing nickel oxide as a main component in a desired region so that both surfaces of the alumina substrate having the through hole holes were through-hole connected. After that, the alumina substrate 1 on which the unbaked nickel oxide conductor layer is formed is heat-treated in the air at 500 to 800 ° C. to decompose and remove organic components contained in the paste, and then nitrogen gas is added to 5 to 20% hydrogen gas. Heat treatment was performed at 300-600 ℃ in a mixed gas atmosphere containing nickel to reduce nickel oxide to metallic nickel. And it heat-processed at 850-950 degreeC in nitrogen gas atmosphere, and baked the unbaked insulating layer and the unbaked nickel conductor layer simultaneously. The insulating paste is made by mixing a low-temperature sintered glass powder that can be fired at 900 ° C and a powder of alumina powder as the main component, adding a vehicle in which butyral resin is dissolved in a butyrate ester solvent, and kneading with a three-roll mill. did. The conductor paste was prepared by adding nickel oxide as a main component, a vehicle in which butyral resin was dissolved in a butyric acid ester solvent, and kneading with a three-roll mill.
この実施例によれば、導体層の焼成と同時に絶縁層も焼
成するのでスルーホール孔部分に断線が生じない。ま
た、導体材料として卑金属であるニッケルが得られる。According to this embodiment, the conductor layer is fired and the insulating layer is fired at the same time, so that no disconnection occurs in the through hole portion. Also, nickel, which is a base metal, can be obtained as a conductor material.
発明の効果 以上のように、本発明によれば、スルーホール孔を有す
るセラミック基板のスルーホール孔周縁部および内壁に
連続して絶縁ペーストで未焼成絶縁層を形成した後、未
焼成絶縁層を形成したセラミック基板の両面をスルーホ
ール接続するように未焼成絶縁層上に、卑金属の酸化物
を主成分とする導体ペーストで未焼成導体層を形成し
て、未焼成絶縁層と未焼成導体層とを同時に焼成するの
で、導体層が焼成収縮するとともに絶縁層も同時に収縮
することにより、導体の焼成時に起こる体積収縮による
セラミック基板との歪を緩和し、スルーホール孔のエッ
ジ部分で断線の生じない、卑金属を導体材料とするセラ
ミック配線基板が得られる。EFFECTS OF THE INVENTION As described above, according to the present invention, after the unfired insulating layer is continuously formed on the peripheral portion and the inner wall of the through hole of the ceramic substrate having the through hole with the insulating paste, the unfired insulating layer is formed. The unfired insulating layer and the unfired conductor layer are formed by forming the unfired conductor layer on the unfired insulating layer with a conductor paste containing a base metal oxide as a main component so as to connect both sides of the formed ceramic substrate through holes. Since and are simultaneously fired, the conductor layer is fired and shrunk and the insulating layer is simultaneously shrunk, so that the strain with the ceramic substrate due to the volume shrinkage that occurs during the firing of the conductor is relaxed, and a disconnection occurs at the edge of the through-hole hole. A ceramic wiring board having a base metal as a conductor material is obtained.
第1図は本発明の一実施例による銅を導体材料に使用し
たスルーホール孔を有するセラミック配線基板の断面
図、第2図はその製造工程図、第3図は本発明の他の実
施例によるニッケルを導体材料に使用したスルーホール
孔を有するセラミック配線基板の断面図、第4図はその
製造工程図、第5図は従来法における銅を導体材料に使
用したスルーホール孔を有するセラミック配線基板の断
面図、第6図はその製造工程図である。 1……アルミナ基板、2……スルーホール孔、3……銅
導体層、4……絶縁層、5……ニッケル導体層。FIG. 1 is a sectional view of a ceramic wiring board having through holes using copper as a conductor material according to an embodiment of the present invention, FIG. 2 is a manufacturing process drawing thereof, and FIG. 3 is another embodiment of the present invention. FIG. 4 is a sectional view of a ceramic wiring board having through holes using nickel as a conductor material, FIG. 4 is a manufacturing process diagram thereof, and FIG. 5 is a ceramic wiring having through holes using copper as a conductor material in a conventional method. A sectional view of the substrate and FIG. 6 are manufacturing process diagrams thereof. 1 ... Alumina substrate, 2 ... Through hole, 3 ... Copper conductor layer, 4 ... Insulating layer, 5 ... Nickel conductor layer.
Claims (1)
スルーホール孔周縁部および内壁に、連続して絶縁ペー
ストで未焼成絶縁層を形成する工程と、前記セラミック
基板の両面をスルーホール接続するように、前記未焼成
絶縁層上に卑金属の酸化物を主成分とする導体ペースト
で導体層を形成する工程と、前記導体層を形成したセラ
ミック基板を大気中もしくは酸化性雰囲気中でかつ前記
絶縁および導体ペーストに含有される有機成分を分解す
るに充分な温度で加熱処理した後、還元性雰囲気中でか
つ前記導体層中の卑金属の酸化物を卑金属に還元するに
充分な温度で加熱処理し、さらに中性雰囲気中で前記卑
金属の融点以下でかつ前記導体層および未焼成絶縁層が
焼結する温度以上で加熱処理する工程とを有することを
特徴とするセラミック配線基板の製造方法。1. A step of continuously forming an unsintered insulating layer with an insulating paste on a peripheral edge portion and an inner wall of a through hole of a ceramic substrate having a through hole hole, and through-hole connecting both surfaces of the ceramic substrate. A step of forming a conductor layer on the unsintered insulating layer with a conductor paste containing a base metal oxide as a main component, and a ceramic substrate on which the conductor layer is formed in the air or in an oxidizing atmosphere and the insulating and conductor After heat treatment at a temperature sufficient to decompose the organic components contained in the paste, heat treatment at a temperature sufficient to reduce the base metal oxide in the conductor layer to a base metal in a reducing atmosphere, and And a heat treatment at a temperature not higher than the melting point of the base metal and not lower than the temperature at which the conductor layer and the unsintered insulating layer are sintered in a neutral atmosphere. Method of manufacturing a click wiring board.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63153936A JPH0728123B2 (en) | 1988-06-22 | 1988-06-22 | Ceramic wiring board manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63153936A JPH0728123B2 (en) | 1988-06-22 | 1988-06-22 | Ceramic wiring board manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01321680A JPH01321680A (en) | 1989-12-27 |
JPH0728123B2 true JPH0728123B2 (en) | 1995-03-29 |
Family
ID=15573319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP63153936A Expired - Lifetime JPH0728123B2 (en) | 1988-06-22 | 1988-06-22 | Ceramic wiring board manufacturing method |
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Country | Link |
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JP (1) | JPH0728123B2 (en) |
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JP4936136B2 (en) * | 2006-11-29 | 2012-05-23 | 日本特殊陶業株式会社 | Sensor element, sensor element manufacturing method, and gas sensor |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61289691A (en) * | 1985-06-18 | 1986-12-19 | 松下電器産業株式会社 | Metalized composition |
JPS62140493A (en) * | 1985-12-16 | 1987-06-24 | 富士通株式会社 | Through-hole formation of hybrid ic |
-
1988
- 1988-06-22 JP JP63153936A patent/JPH0728123B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JPH01321680A (en) | 1989-12-27 |
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