JPH0726843Y2 - 半導体素子分離構造 - Google Patents
半導体素子分離構造Info
- Publication number
- JPH0726843Y2 JPH0726843Y2 JP1988014925U JP1492588U JPH0726843Y2 JP H0726843 Y2 JPH0726843 Y2 JP H0726843Y2 JP 1988014925 U JP1988014925 U JP 1988014925U JP 1492588 U JP1492588 U JP 1492588U JP H0726843 Y2 JPH0726843 Y2 JP H0726843Y2
- Authority
- JP
- Japan
- Prior art keywords
- element isolation
- polysilicon
- nitride film
- silicon nitride
- isolation structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Landscapes
- Element Separation (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988014925U JPH0726843Y2 (ja) | 1988-02-05 | 1988-02-05 | 半導体素子分離構造 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988014925U JPH0726843Y2 (ja) | 1988-02-05 | 1988-02-05 | 半導体素子分離構造 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01120340U JPH01120340U (OSRAM) | 1989-08-15 |
| JPH0726843Y2 true JPH0726843Y2 (ja) | 1995-06-14 |
Family
ID=31226532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988014925U Expired - Lifetime JPH0726843Y2 (ja) | 1988-02-05 | 1988-02-05 | 半導体素子分離構造 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0726843Y2 (OSRAM) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55102235A (en) * | 1979-01-29 | 1980-08-05 | Nippon Telegr & Teleph Corp <Ntt> | Formation of interlayer conductive layer |
| JPS57204144A (en) * | 1981-06-10 | 1982-12-14 | Hitachi Ltd | Insulating and isolating method for semiconductor integrated circuit |
| JPS58153349A (ja) * | 1982-03-08 | 1983-09-12 | Nec Corp | 半導体装置の製造方法 |
| JPS60241230A (ja) * | 1984-05-16 | 1985-11-30 | Hitachi Micro Comput Eng Ltd | 半導体装置 |
-
1988
- 1988-02-05 JP JP1988014925U patent/JPH0726843Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01120340U (OSRAM) | 1989-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6228727B1 (en) | Method to form shallow trench isolations with rounded corners and reduced trench oxide recess | |
| US5326715A (en) | Method for forming a field oxide film of a semiconductor device | |
| JP3880207B2 (ja) | トレンチ隔離の形成方法 | |
| JPH08293541A (ja) | 半導体装置の素子分離方法 | |
| US6143623A (en) | Method of forming a trench isolation for semiconductor device with lateral projections above substrate | |
| JPH09181164A (ja) | 半導体装置及びその素子分離領域の形成方法 | |
| TWI234228B (en) | Method of fabricating a shallow trench isolation | |
| JPH06302684A (ja) | 半導体素子のフィールド酸化膜形成方法 | |
| JP2000164691A (ja) | 半導体装置及びその製造方法 | |
| US5252511A (en) | Isolation method in a semiconductor device | |
| JPH09120989A (ja) | スペーサを利用した半導体装置のトレンチの形成方法 | |
| KR20020042251A (ko) | 반도체 소자의 분리구조 제조방법 | |
| JP4003844B2 (ja) | 半導体装置の素子分離方法 | |
| JPH0726843Y2 (ja) | 半導体素子分離構造 | |
| JP2955838B2 (ja) | 半導体装置の製造方法 | |
| JPH0555361A (ja) | 半導体装置及びその製造方法 | |
| JP2629141B2 (ja) | 半導体装置の素子の隔離方法 | |
| JP3190144B2 (ja) | 半導体集積回路の製造方法 | |
| JPH07302791A (ja) | 半導体素子のフィールド酸化膜の形成方法 | |
| JPH0729971A (ja) | 半導体装置の製造方法 | |
| JPH0521592A (ja) | 半導体装置の製造方法及び半導体装置 | |
| KR100203906B1 (ko) | 반도체 소자의 소자분리막 제조방법 | |
| EP0716442B1 (en) | Integrated circuit fabrication utilizing LOCOS process | |
| JPH08330252A (ja) | 半導体装置の製造方法 | |
| JPH05206263A (ja) | 半導体装置の製造方法 |