JPH07263621A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH07263621A JPH07263621A JP6048051A JP4805194A JPH07263621A JP H07263621 A JPH07263621 A JP H07263621A JP 6048051 A JP6048051 A JP 6048051A JP 4805194 A JP4805194 A JP 4805194A JP H07263621 A JPH07263621 A JP H07263621A
- Authority
- JP
- Japan
- Prior art keywords
- power
- semiconductor device
- circuit board
- circuit section
- power circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
Landscapes
- Inverter Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、たとえばパワー素子
と制御素子とを有する半導体装置に関するもので、特に
インバータに代表されるようなパワー半導体装置に使用
されるものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having, for example, a power element and a control element, and particularly to a power semiconductor device represented by an inverter.
【０００２】[0002]
【従来の技術】近年、インバータなどのパワー半導体装
置にあっては、パワー素子とその周辺の制御素子とを組
み合わせたインテリジェント化，複合化への傾向が強ま
りつつある。2. Description of the Related Art In recent years, in power semiconductor devices such as inverters, there has been an increasing tendency toward intelligentization and combination of power elements and control elements around them.
【０００３】たとえば、従来のパワー半導体装置では、
放熱性を重要視するため、ＤＢＣ（Ｄｉｒｅｃｔ Ｂｏ
ｎｄ Ｃｏｐｐｅｒ）基板が多く用いられている。ま
た、多少放熱性は劣るものの、比較的安価な絶縁型金属
基板を使用する場合も増えている。For example, in a conventional power semiconductor device,
To emphasize heat dissipation, DBC (Direct Bo)
nd Copper) substrates are often used. Moreover, although the heat radiation property is somewhat inferior, the number of cases where an insulating metal substrate which is relatively inexpensive is used is increasing.
【０００４】図２に、絶縁型金属基板を用いてなる一般
的なパワー半導体装置の例を示している。すなわち、こ
のパワー半導体装置は、たとえば絶縁型金属基板１０１
と、この絶縁型金属基板１０１上に設けられたパワー系
の回路部１０２および制御系の回路部１０３とが、絶縁
性材料からなるケース１０４内に収納された構成とされ
ている。FIG. 2 shows an example of a general power semiconductor device using an insulating metal substrate. That is, this power semiconductor device is, for example, an insulating metal substrate 101.
The power system circuit section 102 and the control system circuit section 103 provided on the insulating metal substrate 101 are housed in a case 104 made of an insulating material.
【０００５】絶縁型金属基板１０１は、アルミニウム
（Ａｌ）などの金属ベース部１０１ａ上に、高放熱性絶
縁層１０１ｂを介して、銅（Ｃｕ）などの導体１０１ｃ
が部分的に設けられてなる構成とされている。The insulating metal substrate 101 includes a conductor 101c made of copper (Cu) or the like on a metal base 101a made of aluminum (Al) or the like, with a high heat dissipation insulating layer 101b interposed therebetween.
Is partially provided.
【０００６】パワー系の回路部１０２は、上記絶縁型金
属基板１０１の導体１０１ｃ上に、放熱ブロック１０５
を介して複数のパワー素子１０６を搭載してなり、パワ
ー素子１０６の相互、およびパワー素子１０６とパワー
端子１０７との間が金属ワイヤ１０８を介して接続され
た構成とされている。The power system circuit section 102 includes a heat dissipation block 105 on the conductor 101c of the insulating metal substrate 101.
A plurality of power elements 106 are mounted via the power elements 106, and the power elements 106 and the power elements 106 and the power terminals 107 are connected to each other via metal wires 108.
【０００７】制御系の回路部１０３は、上記絶縁型金属
基板１０１の導体１０１ｃ上に絶縁層１１０を介して配
線層１１１が設けられてなり、この配線層１１１上に制
御素子１１２が実装されることで、信号端子１１３と電
気的に接続されている。In the control system circuit section 103, a wiring layer 111 is provided on a conductor 101c of the insulating metal substrate 101 via an insulating layer 110, and a control element 112 is mounted on the wiring layer 111. Thus, the signal terminal 113 is electrically connected.
【０００８】この場合、パワー端子１０７と導体１０１
ｃとの接続、および信号端子１１３と配線層１１１との
接続には、一般に半田付けによる方法が用いられてい
る。また、パワー系の回路部１０２と制御系の回路部１
０３との間は、金属ワイヤ１１４により電気的に接続さ
れている。In this case, the power terminal 107 and the conductor 101
A method by soldering is generally used for the connection with c and the connection between the signal terminal 113 and the wiring layer 111. Further, the power system circuit unit 102 and the control system circuit unit 1
03 is electrically connected by a metal wire 114.
【０００９】しかしながら、このような構成、つまりパ
ワー系および制御系の回路部が同居するようなパワー半
導体装置においては、次のような問題点があった。すな
わち、パワー素子を搭載するために高放熱性を有する基
板を用いる必要がある。このため、パワー系の回路部と
制御系の回路部とを同一基板上に設けてなる場合には、
基板が非常に複雑な構成となり、コスト的に高価なもの
となる。特に、コストの厳しい民生用や汎用インバータ
の分野では、高価な基板を採用しにくいという問題があ
った。However, in such a structure, that is, in the power semiconductor device in which the circuit parts of the power system and the control system coexist, there are the following problems. That is, it is necessary to use a substrate having high heat dissipation for mounting the power element. Therefore, when the power system circuit section and the control system circuit section are provided on the same substrate,
The board has a very complicated structure, and the cost is high. In particular, in the field of consumer and general-purpose inverters where the cost is severe, there is a problem that it is difficult to adopt an expensive board.
【００１０】また、制御系の回路部またはパワー系の回
路部のどちらかの構成を変更などする場合、全体を再設
計し直す必要があり、設計などに余分なコストや時間を
要する。Further, when changing the configuration of either the control system circuit unit or the power system circuit unit, it is necessary to redesign the entire system, which requires extra cost and time.
【００１１】また、静電ノイズ（ＥＭＩ）対策上、制御
系の回路部と基板との間に絶縁層を設けて部分的に二層
構造とし、パワー系の回路部と制御系の回路部との間を
一定以上の距離を保って配線しなければならない。さら
には、パワー端子や信号端子の取り付けに半田を用いて
いるため、取り付けの工程が複雑で、信頼性が悪いなど
の問題があった。In order to prevent electrostatic noise (EMI), an insulating layer is provided between the control system circuit section and the substrate to partially form a two-layer structure, and the power system circuit section and the control system circuit section are provided. Wiring must be maintained with a certain distance between them. Further, since solder is used for mounting the power terminals and the signal terminals, there are problems that the mounting process is complicated and the reliability is poor.
【００１２】[0012]
【発明が解決しようとする課題】上記したように、従来
においては、コスト的に高価である、設計の自由度が悪
い、ＥＭＩ対策が必要である、信頼性が悪いなどさまざ
まな問題があった。そこで、この発明は、設計や製造の
自由度を改善でき、安価で、信頼性の高い半導体装置を
提供することを目的としている。As described above, in the past, there were various problems such as high cost, poor design freedom, EMI countermeasures required, and poor reliability. . Therefore, an object of the present invention is to provide an inexpensive and highly reliable semiconductor device that can improve the degree of freedom in designing and manufacturing.
【００１３】[0013]
【課題を解決するための手段】上記の目的を達成するた
めに、この発明の半導体装置にあっては、パワー素子を
有するパワー回路部と、このパワー回路部を制御する制
御素子を有する制御回路部とを同一容器内に収納してな
るものにおいて、前記パワー回路部と前記制御回路部と
を別基板上にそれぞれ構成し、かつ、少なくとも前記各
回路部と外部入出力端子との接続に金属ワイヤを用いて
なる構成とされている。To achieve the above object, in a semiconductor device according to the present invention, a control circuit having a power circuit section having a power element and a control element for controlling the power circuit section is provided. The power circuit section and the control circuit section are respectively formed on different substrates, and at least the respective circuit sections and external input / output terminals are connected to each other by a metal. It is configured to use a wire.
【００１４】また、この発明の半導体装置にあっては、
パワー素子を有するパワー回路部を構成してなるパワー
回路基板と、このパワー回路基板上に構成された前記パ
ワー回路部を制御する制御素子を有する制御回路部を構
成してなる制御回路基板と、この制御回路基板および前
記パワー回路基板を収納するための、外部入出力端子を
インサート成形してなる容器と、この容器内に収納され
た前記パワー回路基板および前記制御回路基板と前記外
部入出力端子との間を金属ワイヤを用いて接続する接続
手段とから構成されている。Further, in the semiconductor device of the present invention,
A power circuit board comprising a power circuit section having a power element; and a control circuit board comprising a control circuit section having a control element for controlling the power circuit section formed on the power circuit board, A container formed by insert molding of external input / output terminals for housing the control circuit board and the power circuit board, the power circuit board and the control circuit board housed in the container, and the external input / output terminals And a connecting means for connecting between and using a metal wire.
【００１５】[0015]
【作用】この発明は、上記した手段により、構成を簡素
化できるようになるため、その分、合理化や低廉化が可
能となるものである。The present invention makes it possible to simplify the structure by the above-mentioned means, and accordingly, rationalization and cost reduction can be realized.
【００１６】[0016]
【実施例】以下、この発明の一実施例について図面を参
照して説明する。図１は、本発明にかかるパワー半導体
装置の概略構成を示すものである。なお、同図（ａ）は
パワー半導体装置の一部を切り欠いて示す斜視図、同図
（ｂ）は同じく断面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows a schematic configuration of a power semiconductor device according to the present invention. It should be noted that FIG. 1A is a perspective view showing a power semiconductor device with a part cut away, and FIG. 1B is a sectional view thereof.
【００１７】すなわち、このパワー半導体装置は、たと
えばパワー回路基板としての絶縁型金属基板１１上に設
けられたパワー系のパワー回路部１２と、制御回路基板
としてのガラスエポキシ系材料からなるＰＣＢ（プリン
ト・サーキット・ボード）１３上に設けられた制御系の
制御回路部１４とが、同一のケース（容器）１５内に収
納された構成とされている。That is, this power semiconductor device includes, for example, a power system power circuit section 12 provided on an insulating metal substrate 11 as a power circuit board and a PCB (printed board) made of a glass epoxy material as a control circuit board. The control circuit section 14 of the control system provided on the circuit board 13 is housed in the same case (container) 15.
【００１８】ケース１５は、たとえばＰＰＳ（ポリ・フ
ェニレン・サルファイド）などの絶縁性材料からなる枠
体１５ａと蓋体１５ｂとによって構成され、その枠体１
５ａの側壁にあらかじめ外部入出力端子としてのパワー
端子１６および信号端子１７がそれぞれインサート成形
により形成されている。The case 15 is composed of a frame body 15a and a lid body 15b made of an insulating material such as PPS (polyphenylene sulfide).
A power terminal 16 and a signal terminal 17 as external input / output terminals are formed in advance by insert molding on the side wall of 5a.
【００１９】絶縁型金属基板１１は、たとえばアルミニ
ウム（Ａｌ）などの金属ベース部１１ａ上に、高放熱性
絶縁層１１ｂを介して、銅（Ｃｕ）などの導体１１ｃが
部分的に設けられてなる構成とされている。The insulating metal substrate 11 is formed by partially providing a conductor 11c such as copper (Cu) on a metal base portion 11a such as aluminum (Al) via a high heat dissipation insulating layer 11b. It is configured.
【００２０】この絶縁型金属基板１１は、たとえば放熱
のために金属ベース部１１ａを外部放熱板（図示してい
ない）と接地させる必要があるため、前記ケース１５の
底面に金属ベース部１１ａが露出するようにして、前記
ケース１５の枠体１５ａに接着などにより固着されるよ
うになっている。In this insulated metal substrate 11, for example, the metal base portion 11a needs to be grounded to an external heat dissipation plate (not shown) for heat dissipation, so that the metal base portion 11a is exposed on the bottom surface of the case 15. In this way, the frame 15a of the case 15 is fixed by adhesion or the like.
【００２１】パワー回路部１２は、たとえば上記絶縁型
金属基板１１の一方の導体１１ｃ上に、放熱ブロック１
２ａを介して複数のパワー素子１２ｂを搭載してなり、
パワー素子１２ｂの相互がＡｌワイヤ（金属ワイヤ）１
２ｃによりボンディング接続された構成とされている。The power circuit section 12 is provided, for example, on the one conductor 11c of the insulating metal substrate 11 on the heat dissipation block 1.
2a is mounted with a plurality of power elements 12b,
Mutual power elements 12b are Al wires (metal wires) 1
It is configured to be bonded and connected by 2c.
【００２２】そして、パワー素子１２ｂと上記パワー端
子１６とが、たとえば他方の導体１１ｃを介して、Ａｌ
ワイヤ１２ｄによりボンディング接続されている。ＰＣ
Ｂ１３は、たとえば前記ケース１５の枠体１５ａにシリ
コン接着剤などを用いて固着されるようになっている。Then, the power element 12b and the power terminal 16 are connected to each other via, for example, the other conductor 11c, and
Bonding connection is made by a wire 12d. PC
B13 is adapted to be fixed to the frame body 15a of the case 15 by using, for example, a silicon adhesive.
【００２３】制御回路部１４は、上記ＰＣＢ１３上に設
けられた配線層１４ａ上に制御素子１４ｂが実装されて
なる構成とされている。そして、その制御素子１４ｂと
上記信号端子１７とが、たとえば配線層１４ａを介し
て、Ａｌワイヤ１４ｃによりボンディング接続されてい
る。The control circuit section 14 is constructed by mounting a control element 14b on a wiring layer 14a provided on the PCB 13. The control element 14b and the signal terminal 17 are bonded to each other by an Al wire 14c, for example, via the wiring layer 14a.
【００２４】また、各基板１１，１３間における、たと
えばパワー素子１２ｂと制御素子１４ｂとの相互の電気
的接続もＡｌワイヤ１８を介してボンディング接続され
ている。Further, for example, the mutual electrical connection between the power element 12b and the control element 14b between the substrates 11 and 13 is also connected by bonding via the Al wire 18.
【００２５】すなわち、本実施例におけるパワー半導体
装置においては、パワー素子１２ｂが搭載されるパワー
回路基板に放熱性の優れた絶縁型金属基板１１を使用
し、制御素子１４ｂが搭載される制御回路基板にガラス
エポキシ系材料からなる安価なＰＣＢ１３を使用するよ
うにしている。That is, in the power semiconductor device according to the present embodiment, the power circuit board on which the power element 12b is mounted uses the insulating metal substrate 11 having excellent heat dissipation, and the control circuit board on which the control element 14b is mounted. In addition, an inexpensive PCB 13 made of a glass epoxy material is used.
【００２６】そして、それぞれに構成されたパワー回路
部１２と制御回路部１４とを、ＰＣＢ１３および絶縁型
金属基板１１の順で枠体１５ａに固定させる。また、各
素子１２ｂ，１４ｂと各端子１６，１７との相互、およ
び各基板１１，１３間の電気的接続は、すべてワイヤボ
ンディングにより実施する。Then, the power circuit section 12 and the control circuit section 14 respectively configured are fixed to the frame body 15a in the order of the PCB 13 and the insulating metal substrate 11. Further, the electrical connections between the elements 12b and 14b and the terminals 16 and 17 and between the substrates 11 and 13 are all performed by wire bonding.
【００２７】この後、必要に応じてゲル１９などを注入
し、さらに蓋体１５ｂをはめ込むことで、別々の基板１
１，１３上にそれぞれ構成されたパワー回路部１２と制
御回路部１４とを同一のケース１５内に収納してなる本
実施例装置が完成されるようになっている。Thereafter, if necessary, gel 19 or the like is injected, and then the lid 15b is fitted to separate the substrates 1 from each other.
The device of the present embodiment, in which the power circuit section 12 and the control circuit section 14 respectively configured on 1 and 13 are housed in the same case 15, is completed.
【００２８】このような構成のパワー半導体装置によれ
ば、パワー回路部１２と制御回路部１４の基板を分ける
ことで、基板構成を簡素化できるようになる。このた
め、基板を部分的に二層構造とする必要がなくなるな
ど、その分だけ、コスト的に安価なものとすることが可
能となる。According to the power semiconductor device having such a structure, by separating the boards of the power circuit section 12 and the control circuit section 14, the board structure can be simplified. Therefore, it is not necessary to partially form the substrate into a two-layer structure, and the cost can be reduced accordingly.
【００２９】また、基板設計時の自由度を向上できる、
つまりどちらか一方の回路部構成を変更する必要が生じ
た場合には、その基板のみを設計し直すことでことが足
りるようになる。Further, the degree of freedom in designing the board can be improved,
In other words, if it becomes necessary to change the configuration of one of the circuit parts, it is sufficient to redesign only that board.
【００３０】さらには、ＥＭＩ（静電ノイズ）対策の心
配がない。しかも、本実施例のパワー半導体装置の場
合、放熱性を重要視しない制御回路基板（ＰＣＢ１３）
にガラスエポキシ系の材料を用いることで、比較的高価
な絶縁型金属基板１１の使用面積を最小限にとどめるこ
とができるようにしている。これにより、大幅なコスト
ダウンが図れるものである。Furthermore, there is no need to worry about measures against EMI (electrostatic noise). Moreover, in the case of the power semiconductor device of the present embodiment, the control circuit board (PCB13) in which heat dissipation is not important
By using a glass epoxy material, the use area of the relatively expensive insulating metal substrate 11 can be minimized. As a result, the cost can be greatly reduced.
【００３１】一方、パワー端子１６および信号端子１７
である外部入出力端子をインサート成形により形成し、
これらとの接続をワイヤボンディングにより行うように
している。このため、半田付けの工程が不要にでき、フ
ラックス洗浄レス化が可能となるなど、製造にかかる工
程の簡略化にともなう低コスト化が図れるとともに、環
境問題にも容易に対応できる。On the other hand, the power terminal 16 and the signal terminal 17
External input / output terminals are formed by insert molding,
The connection with these is performed by wire bonding. For this reason, the soldering process can be eliminated, flux cleaning can be eliminated, and the cost can be reduced due to the simplification of the manufacturing process, and the environmental problem can be easily dealt with.
【００３２】また、ボンディング接続により接続の信頼
性および自由度を改善できるようになるものである。上
記したように、構成を簡素化できるようにしている。Further, the bonding connection can improve the reliability and the degree of freedom of the connection. As described above, the structure can be simplified.
【００３３】すなわち、同一ケース内に収納されるパワ
ー回路部と制御回路部とを別の基板上にそれぞれ構成す
るとともに、各部の電気的接続をワイヤボンディングに
より行うようにしている。これにより、構造の簡素化お
よび工程の簡略化が図れるようになる。したがって、そ
の分、合理化や低廉化が可能となり、設計や製造の自由
度を改善できるようになるとともに、安価で、信頼性の
高い半導体装置を実現し得るものである。That is, the power circuit section and the control circuit section housed in the same case are formed on different substrates, and the respective parts are electrically connected by wire bonding. As a result, the structure and the process can be simplified. Therefore, rationalization and cost reduction can be realized correspondingly, the degree of freedom in designing and manufacturing can be improved, and an inexpensive and highly reliable semiconductor device can be realized.
【００３４】なお、上記実施例においては、ガラスエポ
キシ系材料からなるＰＣＢを用いた場合について説明し
たが、これに限らず、たとえば制御回路基板としては紙
フェノール系の材料などを用いることもできる。その
他、この発明の要旨を変えない範囲において、種々変形
実施可能なことは勿論である。In the above embodiment, the case where the PCB made of the glass epoxy material is used is explained, but the present invention is not limited to this, and for example, a paper phenol material can be used as the control circuit board. Of course, various modifications can be made without departing from the scope of the invention.
【００３５】[0035]
【発明の効果】以上、詳述したようにこの発明によれ
ば、設計や製造の自由度を改善でき、安価で、信頼性の
高い半導体装置を提供できる。As described above in detail, according to the present invention, the degree of freedom in designing and manufacturing can be improved, and an inexpensive and highly reliable semiconductor device can be provided.
【図１】この発明の一実施例にかかるパワー半導体装置
の概略を示す構成図。FIG. 1 is a configuration diagram showing an outline of a power semiconductor device according to an embodiment of the present invention.
【図２】従来技術とその問題点を説明するために示すパ
ワー半導体装置の概略断面図。FIG. 2 is a schematic cross-sectional view of a power semiconductor device shown for explaining the conventional technique and its problems.
１１…絶縁型金属基板、１１ａ…金属ベース部、１１ｂ
…高放熱性絶縁層、１１ｃ…導体、１２…パワー回路
部、１２ｂ…パワー素子、１２ｃ，１２ｄ…Ａｌワイ
ヤ、１３…ＰＣＢ、１４…制御回路部、１４ａ…配線
層、１４ｂ…制御素子、１４ｃ…Ａｌワイヤ、１５…ケ
ース、１５ａ…枠体、１５ｂ…蓋体、１６…パワー端
子、１７…信号端子、１８…Ａｌワイヤ。11 ... Insulated metal substrate, 11a ... Metal base portion, 11b
... high heat dissipation insulating layer, 11c ... conductor, 12 ... power circuit section, 12b ... power element, 12c, 12d ... Al wire, 13 ... PCB, 14 ... control circuit section, 14a ... wiring layer, 14b ... control element, 14c ... Al wire, 15 ... Case, 15a ... Frame body, 15b ... Lid body, 16 ... Power terminal, 17 ... Signal terminal, 18 ... Al wire.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 荒木 洋一 東京都港区芝浦一丁目１番１号 株式会社 東芝本社事務所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoichi Araki 1-1-1, Shibaura, Minato-ku, Tokyo Inside Toshiba Headquarters Office
Claims (6)
のパワー回路部を制御する制御素子を有する制御回路部
とを同一容器内に収納してなる半導体装置において、 前記パワー回路部と前記制御回路部とを別基板上にそれ
ぞれ構成し、 かつ、少なくとも前記各回路部と外部入出力端子との接
続に金属ワイヤを用いてなることを特徴とする半導体装
置。1. A semiconductor device in which a power circuit section having a power element and a control circuit section having a control element for controlling the power circuit section are housed in the same container, wherein the power circuit section and the control circuit are provided. And a metal wire for connecting at least each of the circuit parts and the external input / output terminals.
にインサート成形されてなることを特徴とする請求項１
に記載の半導体装置。2. The external input / output terminal is insert-molded on a side wall of the container.
The semiconductor device according to.
してなるパワー回路基板と、 このパワー回路基板上に構成された前記パワー回路部を
制御する制御素子を有する制御回路部を構成してなる制
御回路基板と、 この制御回路基板および前記パワー回路基板を収納する
ための、外部入出力端子をインサート成形してなる容器
と、 この容器内に収納された前記パワー回路基板および前記
制御回路基板と前記外部入出力端子との間を金属ワイヤ
を用いて接続する接続手段とを具備したことを特徴とす
る半導体装置。3. A power circuit board comprising a power circuit section having a power element, and a control circuit section having a control element for controlling the power circuit section formed on the power circuit board. A control circuit board, a container for accommodating the control circuit board and the power circuit board, the external input / output terminals being insert-molded, the power circuit board and the control circuit board housed in the container, A semiconductor device, comprising: a connecting means for connecting the external input / output terminal with a metal wire.
高放熱性絶縁層を介して導体を配置してなる絶縁型金属
基板からなり、その金属ベース部が前記容器内より露出
されて設けられ、外部放熱板と接地されることを特徴と
する請求項３に記載の半導体装置。4. The power circuit board is made of an insulating metal substrate in which conductors are arranged on a metal base portion via a high heat dissipation insulating layer, and the metal base portion is provided so as to be exposed from the inside of the container. The semiconductor device according to claim 3, wherein the semiconductor device is grounded to the external heat dissipation plate.
料からなり、前記容器内に接着剤などを用いて固着され
ることを特徴とする請求項３に記載の半導体装置。5. The semiconductor device according to claim 3, wherein the control circuit board is made of a glass epoxy material and is fixed in the container with an adhesive or the like.
体とからなり、その枠体の側壁に前記外部入出力端子が
インサート成形されてなることを特徴とする請求項３に
記載の半導体装置。6. The container according to claim 3, wherein the container comprises a frame body and a lid body made of an insulating material, and the external input / output terminals are insert-molded on a side wall of the frame body. Semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6048051A JPH07263621A (en) | 1994-03-18 | 1994-03-18 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6048051A JPH07263621A (en) | 1994-03-18 | 1994-03-18 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07263621A true JPH07263621A (en) | 1995-10-13 |
Family
ID=12792547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6048051A Pending JPH07263621A (en) | 1994-03-18 | 1994-03-18 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07263621A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5920119A (en) * | 1996-02-22 | 1999-07-06 | Hitachi, Ltd. | Power semiconductor module employing metal based molded case and screw fastening type terminals for high reliability |
| EP1032042A2 (en) * | 1999-02-22 | 2000-08-30 | Hitachi, Ltd. | Semiconductor module, power converter using the same and manufacturing method thereof |
| FR2801725A1 (en) * | 1999-11-17 | 2001-06-01 | Int Rectifier Corp | Semiconductor module has printed circuit board with opening aligned with heat dissipation surface of substrate, which is fastened directly on the heat sink using screw |
| US6291880B1 (en) * | 1998-02-12 | 2001-09-18 | Hitachi, Ltd. | Semiconductor device including an integrally molded lead frame |
| US6424026B1 (en) * | 1999-08-02 | 2002-07-23 | International Rectifier Corporation | Power module with closely spaced printed circuit board and substrate |
| DE102005036116A1 (en) * | 2005-08-01 | 2007-02-15 | Infineon Technologies Ag | Power semi-conductor module comprises has both first semi-conductor chip, with semi-conductor element, and second semi-conductor chip, with control electronics, soldered on structured metalization |
| JP2010267727A (en) * | 2009-05-13 | 2010-11-25 | Nissan Motor Co Ltd | Semiconductor device |
| CN103683684A (en) * | 2012-09-19 | 2014-03-26 | 株式会社捷太格特 | Control device and motor unit including the control device |
| WO2014199764A1 (en) * | 2013-06-10 | 2014-12-18 | 富士電機株式会社 | Semiconductor device and method for producing same |
| WO2015071238A1 (en) * | 2013-11-18 | 2015-05-21 | BSH Hausgeräte GmbH | Device having a power electronics module for supplying an electric load of a household appliance with electrical supply voltage, household appliance, and method for producing such a device |
-
1994
- 1994-03-18 JP JP6048051A patent/JPH07263621A/en active Pending
Cited By (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5920119A (en) * | 1996-02-22 | 1999-07-06 | Hitachi, Ltd. | Power semiconductor module employing metal based molded case and screw fastening type terminals for high reliability |
| US6291880B1 (en) * | 1998-02-12 | 2001-09-18 | Hitachi, Ltd. | Semiconductor device including an integrally molded lead frame |
| EP1032042A2 (en) * | 1999-02-22 | 2000-08-30 | Hitachi, Ltd. | Semiconductor module, power converter using the same and manufacturing method thereof |
| EP1032042A3 (en) * | 1999-02-22 | 2003-01-02 | Hitachi, Ltd. | Semiconductor module, power converter using the same and manufacturing method thereof |
| US6424026B1 (en) * | 1999-08-02 | 2002-07-23 | International Rectifier Corporation | Power module with closely spaced printed circuit board and substrate |
| JP2007227957A (en) * | 1999-11-17 | 2007-09-06 | Internatl Rectifier Corp | Semiconductor device module |
| FR2801725A1 (en) * | 1999-11-17 | 2001-06-01 | Int Rectifier Corp | Semiconductor module has printed circuit board with opening aligned with heat dissipation surface of substrate, which is fastened directly on the heat sink using screw |
| DE102005036116B4 (en) * | 2005-08-01 | 2012-03-22 | Infineon Technologies Ag | The power semiconductor module |
| US7579682B2 (en) | 2005-08-01 | 2009-08-25 | Infineon Technologies Ag | Power semiconductor module |
| DE102005036116A1 (en) * | 2005-08-01 | 2007-02-15 | Infineon Technologies Ag | Power semi-conductor module comprises has both first semi-conductor chip, with semi-conductor element, and second semi-conductor chip, with control electronics, soldered on structured metalization |
| JP2010267727A (en) * | 2009-05-13 | 2010-11-25 | Nissan Motor Co Ltd | Semiconductor device |
| CN103683684A (en) * | 2012-09-19 | 2014-03-26 | 株式会社捷太格特 | Control device and motor unit including the control device |
| JP2014060901A (en) * | 2012-09-19 | 2014-04-03 | Jtekt Corp | Control device and motor unit having the same |
| WO2014199764A1 (en) * | 2013-06-10 | 2014-12-18 | 富士電機株式会社 | Semiconductor device and method for producing same |
| CN105190876A (en) * | 2013-06-10 | 2015-12-23 | 富士电机株式会社 | Semiconductor device and method for producing same |
| US9299642B2 (en) | 2013-06-10 | 2016-03-29 | Fuji Electric Co., Ltd. | Semiconductor device and method for producing same |
| JP6041053B2 (en) * | 2013-06-10 | 2016-12-07 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
| JPWO2014199764A1 (en) * | 2013-06-10 | 2017-02-23 | 富士電機株式会社 | Semiconductor device and manufacturing method thereof |
| CN105190876B (en) * | 2013-06-10 | 2018-04-13 | 富士电机株式会社 | Semiconductor device and its manufacture method |
| WO2015071238A1 (en) * | 2013-11-18 | 2015-05-21 | BSH Hausgeräte GmbH | Device having a power electronics module for supplying an electric load of a household appliance with electrical supply voltage, household appliance, and method for producing such a device |
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