JP3754197B2 - Hybrid integrated circuit device - Google Patents

Hybrid integrated circuit device Download PDF

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Publication number
JP3754197B2
JP3754197B2 JP35391997A JP35391997A JP3754197B2 JP 3754197 B2 JP3754197 B2 JP 3754197B2 JP 35391997 A JP35391997 A JP 35391997A JP 35391997 A JP35391997 A JP 35391997A JP 3754197 B2 JP3754197 B2 JP 3754197B2
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Prior art keywords
integrated circuit
hybrid integrated
circuit board
frame member
circuit device
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JP35391997A
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JPH11186463A (en
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晋 太田
秀史 西塔
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Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Description

【発明の属する技術分野】
本発明は混成集積回路装置に関するものである。
【従来の技術】
一般に、混成集積回路装置として採用される封止方法は、図５のように半導体素子等の回路素子１，２が実装された混成集積回路基板３の上に蓋をかぶせるような形状の手段、一般にはケース材４と呼ばれているものを採用して封止しているものがある。この構造は、箱状で中空構造であり、必要により中に樹脂が注入されている。
ここで１は、印刷抵抗、２は半導体チップである。またケース材４の一部、第１側面５の隣にケース材４の屋根になる部分には中空部の隣に開口部５が設けられ、そこに設けられた配線と外部リード６が半田を介して固着されている。ここで外部リード６は、基板と水平に延在されている。また外部リード６の固着部分は、一般にリード強度を増強させるために樹脂が封止されている。
また外部リード６を混成集積回路基板３から垂直に延在させたい場合、ケース材４と一体となり、上部に外部リード６の導出口７を有したる外部リード６の封止枠８は、第１側面５とは別に同様に基板端部に第２側面９を有する。図面では省略したが、もちろん混成集積回路基板の４側辺には、第１側面を含めて４枚の側面が当接し、これと屋根の部分に相当する上板１０によりケース材が構成されている。
【発明が解決しようとする課題】
しかしながら、ケース材を使った封止構造は、前述したように混成集積回路基板３の側面11に当接させるため、ある厚みを有した当接面12を設けるため、紙面に対して左右、表裏に対応するケース材のサイズが大きくなるとともに、上板を有するため、混成集積回路装置の厚みも大きくなる。従って外形サイズが大きくなる問題があった。
一方、外部リード６を上方に延在させようとすると、ケース材4に図５や図６のような外部リードの導出口を形成するには、金型の加工、別のパーツとして用意するなど複雑になる問題もあった。しかもケース材に樹脂を注入しようとすると注入しずらい問題もあった。
【課題を解決するための手段】
本発明は上記の課題に鑑み成されたもので、第１に混成集積回路基板の上に載置され、素子を囲んだ枠部材と、枠部材と前記混成集積回路基板とで形成される空間に充填された樹脂とを有し、前記混成集積回路基板と当接する枠部材の当接面に、突出部を設け、この突出部に対応する前記混成集積回路基板に、前記突出部の係止部を形成することで解決するものである。
図１のように、基板の側面に対して内側に入る係止部により、枠部材の側面は、混成集積回路基板の側面と同一平面となり、また上面は省略されている。従って、枠部材の厚みの分、混成集積回路装置の厚み、左右のサイズが小さくなり、混成集積回路装置の小型化が実現できる。また混成集積回路基板と枠部材で樹脂注入用の箱を形成することになるが、係止部が形成されているため、その作業性も向上する。
第２に、混成集積回路基板と対面配置される枠部材の面に、外側全周に当接面を設け、この当接面の内側に、若干の隙間を有した離間面を設け、前記当接面から延在された突出部が、この突出部に対応する前記混成集積回路基板の係止部に係止され、前記離間面と混成集積回路基板との間に接着剤を設ける事で、第１の実施例の作用に加え、当接面への接着剤の塗布が部分的にしかできなかった場合で、接着が良好でなくても、枠部材全周にわたる離間面に樹脂が比較的厚く形成されるため、前記枠部材の接着性を補償でき、しかも枠部材に注入されるシリコン樹脂の漏洩を防止することができる。
第３に、前記混成集積回路基板として、金属基板を採用することで解決するものである。
特にモータ等の制御部は、小型で放熱性を必要とするので、混成集積回路基板として金属基板を採用することで、より小型・放熱性の優れた混成集積回路装置が実現できる。
第４に、前記混成集積回路基板の露出部に設けられたビス止め穴を介してビスが設けることで、混成集積回路基板がアース接地され、または外部機器と熱的に結合されることで解決するものである。
【発明の実施の形態】
以下で本発明の第１の実施形態に係る混成集積回路装置について図を参照しながら説明する。図１は、混成集積回路基板30と枠部材31の関係を示し、図２は、混成集積回路基板30に当接する枠部材31の当接面32と接着剤が設けられる離間面33を説明する斜視図である。図３は、混成集積回路装置34の平面図、図４は、図３のＡ−Ａ線の断面図である。
先ず混成集積回路基板30は、一般には、プリント基板、セラミック基板または金属基板等の比較的強度のあるものが用いられる。つまり図４より明らかなように、混成集積回路装置として裏面が露出されるからである。またここで前記混成集積回路基板は、外部機器との熱的結合、或いはアース接地等が考慮され、金属基板が用いられ、特にその加工性よりアルミ基板が用いられる。
前記混成集積回路基板30は、ＩＣ回路が実現されるため、少なくともその表面は絶縁処理される。プリント基板等は元々絶縁基板であるため、絶縁処理は必要としないが、金属基板の場合は、必要とする。例えばＡｌ基板の場合、表面が陽極酸化され酸化物が生成され、その上に更に絶縁性の優れた樹脂が全面に被着されている。但し耐圧を考慮しなければ、この金属酸化物は省略しても良い。また樹脂の材料としては、エポキシやイミド系等の樹脂である。またこの絶縁樹脂の代わりに樹脂シートが貼り合わされても良い。
そしてこの樹脂の上に例えばＣｕより成る導電パターン35が形成され、トランジスタやＩＣ等の能動素子36、チップ抵抗、チップコンデンサ等の受動素子37が半田を介して実装され、所定の回路が実現されている。ここで一部半田を採用せず、銀ペースト等で電気的に接続されても良い。また前記半導体素子36がフェイスアップで実装される場合は、ボンデイングにより金属細線38を介して接続されている。更には、外部リード39が半田を介して接続されており封止樹脂40から外部に導出されている。
図３では、外部リード39の他に外部リード41も設けられているが図４では省略してある。特に外部リードは、枠部材31の中であれば、任意の位置に配置できる。またこれら外部リードを介して混成集積回路装置34の上方に例えばＩＣ回路基板42が配置される。またＩＣ回路基板42の間隔は、スペーサ43を使用し、例えばスペーサ43の中にネジ44が挿入されて固定される。
特に外部リードの形状をＳ字のような歪み吸収体を形成することによりＩＣ基板と混成集積回路装置との間に発生する応力を吸収することができる。
本発明の特徴は、枠部材31である。特に屋根の部分に相当する部分がないため、その分混成集積回路装置の厚みを薄くすることができる。また図５、６のような従来構造では、枠体が混成集積回路基板の側辺に当接しているが、図４を見れば判るとおり、枠部材31の側辺と混成集積回路基板30の側辺がほぼ一致しているので、その分横のサイズも小さくできる。
また混成集積回路基板30と枠部材31の位置合わせのために、係止部(ツメ)45と係合部46を設けている。つまり混成集積回路基板30の上に枠部材31が設置され、この二つの構成により成る箱状の空間に封止樹脂40が注入されるが、係止部45が枠部材31のズレに対するストッパーとして作用し、作業性が向上する。
また第２に、混成集積回路基板30と対面配置される枠部材31の面に於いて、外側全周に当接面32が設けられ、この間に接着剤が塗られる。しかし部分的に接着剤が塗布されず、漏洩が考えられる。しかし枠部材全周にわたる離間面に樹脂が比較的厚く形成されるため、前記枠部材の接着性を補償でき、前記枠部材に注入されるシリコン樹脂の漏洩を防止することができる。
更には、混成集積回路基板30として、金属基板を採用するため、より小型・より放熱性の優れた混成集積回路装置が実現できる。しかも図３のように混成集積回路基板31の露出部47に設けられたビス止め穴48,49を介してビスが設けられ、混成集積回路基板をアース接地する事も可能であるし、または外部機器と熱的に結合する事も可能となる。
【発明の効果】
以上説明したように混成集積回路基板の上に載置され、素子を囲んだ枠部材と、枠部材と前記混成集積回路基板とで形成される空間に充填された樹脂とを有し、前記混成集積回路基板と当接する枠部材の当接面に、突出部を設け、この突出部に対応する前記混成集積回路基板に、前記突出部の係止部を形成することで混成集積回路装置の小型化が実現できる。また係止部が形成されているため、その作業性も向上する。
第２に、当接面の内側に、若干の隙間を有した離間面を設け、この離間面と混成集積回路基板との間に接着剤を設ける事で、枠部材全周にわたる離間面に樹脂が比較的厚く形成されるため、前記枠部材の接着性を補償でき、枠部材に注入されるシリコン樹脂の漏洩を防止することができる。
第３に、金属基板を採用することで小型で放熱性の優れた混成集積回路装置が実現できる。
第４に、前記混成集積回路基板の露出部に設けることで、混成集積回路基板のアース接地、または外部機器と熱的な結合が可能となる。
従って、モーター等の実装に要求される、小型・大電流・放熱性に優れた混成集積回路装置がを可能となる。
【図面の簡単な説明】
【図１】 本発明の混成集積回路装置に採用する枠部材と混成集積回路基板を説明する図である。
【図２】 図１の枠部材の係止部、当接面および離間面を説明する図である。
【図３】 本発明の混成集積回路装置の平面図である。
【図４】 図３のＡ-Ａ線に対応する断面図である。
【図５】 従来の混成集積回路装置の断面図である。
【図６】 従来の混成集積回路装置の断面図である。
【符号の説明】
３０ 混成集積回路基板
３１ 枠部材
４５ 係止部
４６ 係合部BACKGROUND OF THE INVENTION
The present invention relates to a hybrid integrated circuit device.
[Prior art]
Generally, a sealing method employed as a hybrid integrated circuit device is a means having a shape that covers a hybrid integrated circuit board 3 on which circuit elements 1 and 2 such as semiconductor elements are mounted as shown in FIG. In general, there is a case in which what is called a case material 4 is used for sealing. This structure is a box-like and hollow structure, and a resin is injected therein as necessary.
Here, 1 is a printing resistor, and 2 is a semiconductor chip. In addition, an opening 5 is provided next to the hollow portion in a part of the case material 4, next to the first side surface 5, where the case material 4 becomes the roof, and the wiring provided there and the external leads 6 are soldered. It is fixed through. Here, the external lead 6 extends horizontally with the substrate. The fixed portion of the external lead 6 is generally sealed with resin in order to increase the lead strength.
When it is desired to extend the external lead 6 vertically from the hybrid integrated circuit board 3, the sealing frame 8 of the external lead 6, which is integrated with the case material 4 and has the outlet 7 for the external lead 6 on the top, Similarly to the first side surface 5, the second side surface 9 is provided at the end of the substrate. Although omitted in the drawing, of course, four side surfaces including the first side surface are in contact with the four sides of the hybrid integrated circuit board, and the case material is constituted by the upper plate 10 corresponding to the roof portion. Yes.
[Problems to be solved by the invention]
However, since the sealing structure using the case material is brought into contact with the side surface 11 of the hybrid integrated circuit board 3 as described above, the contact surface 12 having a certain thickness is provided. Since the size of the case material corresponding to 1 is increased and the upper plate is provided, the thickness of the hybrid integrated circuit device is also increased. Therefore, there is a problem that the outer size becomes large.
On the other hand, in order to extend the external lead 6 upward, in order to form the lead-out port of the external lead as shown in FIGS. 5 and 6 in the case material 4, processing of the mold, preparing as another part, etc. There was also a problem that became complicated. In addition, there is a problem that it is difficult to inject resin into the case material.
[Means for Solving the Problems]
The present invention has been made in view of the above problems. First, a frame member is placed on the hybrid integrated circuit board and surrounds the element, and a space formed by the frame member and the hybrid integrated circuit board. A protrusion is provided on a contact surface of a frame member that contacts the hybrid integrated circuit board, and the protrusion is locked to the hybrid integrated circuit board corresponding to the protrusion. This is solved by forming the part.
As shown in FIG. 1, the side surface of the frame member is flush with the side surface of the hybrid integrated circuit board, and the upper surface is omitted because of the engaging portion that enters inside the side surface of the substrate. Accordingly, the thickness of the hybrid integrated circuit device and the left and right sizes are reduced by the thickness of the frame member, and the hybrid integrated circuit device can be downsized. Further, a resin injection box is formed by the hybrid integrated circuit board and the frame member, but the workability is improved because the locking portion is formed.
Second, a contact surface is provided on the entire outer periphery of the surface of the frame member that faces the hybrid integrated circuit board, and a separation surface having a slight gap is provided on the inner side of the contact surface. A protrusion extending from the contact surface is locked to the locking portion of the hybrid integrated circuit board corresponding to the protrusion, and an adhesive is provided between the separation surface and the hybrid integrated circuit board. In addition to the operation of the first embodiment, when the adhesive can only be partially applied to the contact surface, the resin is relatively free from the separation surface over the entire circumference of the frame member even if the adhesion is not good. Since it is formed thick, the adhesiveness of the frame member can be compensated, and leakage of silicon resin injected into the frame member can be prevented.
The third problem is solved by employing a metal substrate as the hybrid integrated circuit substrate.
In particular, since a control unit such as a motor is small and requires heat dissipation, a hybrid integrated circuit device that is more compact and has excellent heat dissipation can be realized by using a metal substrate as the hybrid integrated circuit substrate.
Fourth, the screw is provided through the screw fixing hole provided in the exposed portion of the hybrid integrated circuit board, so that the hybrid integrated circuit board is grounded or thermally coupled to an external device. To do.
DETAILED DESCRIPTION OF THE INVENTION
A hybrid integrated circuit device according to a first embodiment of the present invention will be described below with reference to the drawings. FIG. 1 shows the relationship between the hybrid integrated circuit board 30 and the frame member 31, and FIG. 2 explains the contact surface 32 of the frame member 31 that contacts the hybrid integrated circuit board 30 and the separation surface 33 on which the adhesive is provided. It is a perspective view. 3 is a plan view of the hybrid integrated circuit device 34, and FIG. 4 is a cross-sectional view taken along line AA of FIG.
First, the hybrid integrated circuit board 30 is generally a relatively strong board such as a printed board, a ceramic board, or a metal board. That is, as is apparent from FIG. 4, the back surface of the hybrid integrated circuit device is exposed. The hybrid integrated circuit board is a metal board in consideration of thermal coupling with an external device or grounding, and an aluminum board is used because of its workability.
Since the hybrid integrated circuit board 30 realizes an IC circuit, at least the surface thereof is insulated. Since a printed circuit board or the like is originally an insulating substrate, an insulating process is not necessary, but in the case of a metal substrate, it is necessary. For example, in the case of an Al substrate, the surface is anodized to produce an oxide, and a resin with further excellent insulating properties is deposited on the entire surface. However, this metal oxide may be omitted if the breakdown voltage is not taken into consideration. The resin material is an epoxy or imide resin. Further, a resin sheet may be bonded instead of the insulating resin.
A conductive pattern 35 made of, for example, Cu is formed on the resin, and an active element 36 such as a transistor or an IC, and a passive element 37 such as a chip resistor or a chip capacitor are mounted via solder, thereby realizing a predetermined circuit. ing. Here, a part of the solder may not be used, and it may be electrically connected with silver paste or the like. Further, when the semiconductor element 36 is mounted face up, it is connected via a fine metal wire 38 by bonding. Furthermore, external leads 39 are connected via solder and are led out from the sealing resin 40 to the outside.
In FIG. 3, an external lead 41 is also provided in addition to the external lead 39, but is omitted in FIG. In particular, the external lead can be disposed at any position within the frame member 31. Further, for example, an IC circuit board 42 is disposed above the hybrid integrated circuit device 34 via these external leads. The interval between the IC circuit boards 42 is fixed by using a spacer 43, for example, by inserting a screw 44 into the spacer 43.
In particular, the stress generated between the IC substrate and the hybrid integrated circuit device can be absorbed by forming a strain absorber such as an S-shaped external lead.
A feature of the present invention is the frame member 31. In particular, since there is no portion corresponding to the roof portion, the thickness of the hybrid integrated circuit device can be reduced accordingly. 5 and 6, the frame is in contact with the side of the hybrid integrated circuit board. As can be seen from FIG. 4, the side of the frame member 31 and the side of the hybrid integrated circuit board 30 Since the sides are almost the same, the horizontal size can be reduced accordingly.
Further, a locking part (claw) 45 and an engaging part 46 are provided for positioning the hybrid integrated circuit board 30 and the frame member 31. That is, the frame member 31 is installed on the hybrid integrated circuit board 30, and the sealing resin 40 is injected into the box-shaped space formed by these two configurations, but the locking portion 45 serves as a stopper against the displacement of the frame member 31. Work and workability is improved.
Second, a contact surface 32 is provided on the entire outer periphery of the frame member 31 facing the hybrid integrated circuit board 30, and an adhesive is applied therebetween. However, the adhesive is not partially applied and leakage is considered. However, since the resin is formed relatively thick on the separation surface over the entire circumference of the frame member, the adhesiveness of the frame member can be compensated, and the leakage of the silicon resin injected into the frame member can be prevented.
Furthermore, since a metal substrate is employed as the hybrid integrated circuit substrate 30, a hybrid integrated circuit device that is smaller and more excellent in heat dissipation can be realized. In addition, as shown in FIG. 3, screws are provided through screw fixing holes 48 and 49 provided in the exposed portion 47 of the hybrid integrated circuit board 31, and the hybrid integrated circuit board can be grounded or externally provided. It can also be thermally coupled to equipment.
【The invention's effect】
As described above, the frame member is placed on the hybrid integrated circuit board and surrounds the element, and the resin filled in the space formed by the frame member and the hybrid integrated circuit board is included, and the hybrid A projecting portion is provided on the abutting surface of the frame member that abuts on the integrated circuit substrate, and a locking portion of the projecting portion is formed on the hybrid integrated circuit substrate corresponding to the projecting portion, thereby reducing the size of the hybrid integrated circuit device. Can be realized. Moreover, since the latching | locking part is formed, the workability | operativity also improves.
Second, a separation surface having a slight gap is provided inside the contact surface, and an adhesive is provided between the separation surface and the hybrid integrated circuit board, so that the separation surface over the entire circumference of the frame member is resin. Therefore, the adhesiveness of the frame member can be compensated, and the leakage of the silicon resin injected into the frame member can be prevented.
Third, by adopting a metal substrate, a hybrid integrated circuit device having a small size and excellent heat dissipation can be realized.
Fourth, by providing at the exposed portion of the hybrid integrated circuit board, the hybrid integrated circuit board can be grounded or thermally coupled to an external device.
Accordingly, it is possible to provide a hybrid integrated circuit device that is required for mounting a motor or the like and is excellent in small size, large current, and heat dissipation.
[Brief description of the drawings]
FIG. 1 is a diagram for explaining a frame member and a hybrid integrated circuit board that are employed in a hybrid integrated circuit device of the present invention.
FIG. 2 is a diagram illustrating a locking portion, a contact surface, and a separation surface of the frame member of FIG.
FIG. 3 is a plan view of the hybrid integrated circuit device of the present invention.
4 is a cross-sectional view corresponding to the line AA in FIG. 3;
FIG. 5 is a cross-sectional view of a conventional hybrid integrated circuit device.
FIG. 6 is a cross-sectional view of a conventional hybrid integrated circuit device.
[Explanation of symbols]
30 Hybrid integrated circuit board 31 Frame member 45 Locking portion 46 Engaging portion

Claims (3)

少なくとも表面が絶縁処理された上に導電パターンが設けられ、前記導電パターンと電気的に接続された素子が実装された混成集積回路基板と
前記素子を囲むように前記混成集積回路基板上に載置された枠部材と、
前記枠部材と前記混成集積回路基板とで形成される空間に充填された絶縁樹脂とを具備し、
前記枠部材には前記混成集積回路基板と当接する当接面が外側全周に設けられ、前記枠部材の前記当接面の内側全周には前記混成集積回路基板と離間する離間面が設けられ、
前記離間面と前記混成集積回路基板との間には接着剤が充填され、
前記枠部材を凹ませることで前記混成集積回路基板が露出され、露出する部分の前記混成集積回路基板の表面にビス穴を設け、このビス穴に設けられたビスを介して前記混成集積回路基板が接地されることを特徴とする混成集積回路装置。A conductive pattern is provided on at least a surface of which is insulated, and a hybrid integrated circuit board on which an element electrically connected to the conductive pattern is mounted, and is placed on the hybrid integrated circuit board so as to surround the element A frame member,
Comprising an insulating resin filled in a space formed by the frame member and the hybrid integrated circuit board;
The frame member is provided with a contact surface that contacts the hybrid integrated circuit board on the entire outer periphery, and a separation surface that is separated from the hybrid integrated circuit board is provided on the entire inner periphery of the contact surface of the frame member. And
An adhesive is filled between the spacing surface and the hybrid integrated circuit board,
The hybrid integrated circuit board is exposed by recessing the frame member, and a screw hole is provided on the surface of the exposed portion of the hybrid integrated circuit board, and the hybrid integrated circuit board is inserted through the screw provided in the screw hole. A hybrid integrated circuit device characterized in that is grounded. 前記当接面の一部には前記当接面から延在する係止部が形成され、前記混成集積回路基板には前記係止部と対応した係合部が形成され、前記係合部に前記係止部が嵌合することを特徴とする請求項１記載の混成集積回路装置。The person engaging portion in part extending from the contact surface of the contact surface is formed, the engagement portion wherein the hybrid integrated circuit substrate corresponding to the previous Symbol locking portion is formed, the engagement portion The hybrid integrated circuit device according to claim 1, wherein the engaging portion is fitted to the hybrid integrated circuit device. 前記混成集積回路基板は、金属基板より成ることを特徴とする請求項１記載の混成集積回路装置。  2. The hybrid integrated circuit device according to claim 1, wherein the hybrid integrated circuit substrate is made of a metal substrate.
JP35391997A 1997-12-22 1997-12-22 Hybrid integrated circuit device Expired - Lifetime JP3754197B2 (en)

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JPS6417455A (en) * 1987-07-10 1989-01-20 Mitsubishi Electric Corp Semiconductor device
JPH01319971A (en) * 1988-06-22 1989-12-26 Hitachi Ltd Semiconductor device
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