JPH07258828A - Film formation - Google Patents

Abstract

PURPOSE:To form a dense high-quality vapor deposited film having high adhesion and reduced in electric resistance by irradiating a substrate in a high vacuum chamber with a vapor beam of film material, emitted from a vapor beam emitting chamber in the high vacuum chamber, into pattern state. CONSTITUTION:A high vacuum chamber 12 is evacuated, and a substrate 9 is heated. Ar gas is introduced via a valve 14 and high frequency electric discharge is done by an antenna 13, and the substrate 1 is cleaned by the resulting Ar plasma. A film material 6 in a crucible 3 in a vapor beam emitting chamber 4 is heated by a heater 5 and evaporated, and the substrate 1 is irradiated with the resulting vapor beam 8 via a nozzle 7. At this time, the substrate 1 is irradiated, into pattern state, with the vapor beam 8 by moving an XY table 11 while turning the vapor beam 8 on and off by opening and closing a shutter 9, by which a vapor deposited film 15 of pattern state is directly formed. By this method, the vapor deposited film 15 to be a circuit pattern can be efficiently formed while obviating the necessity of intermediate stages such as etching.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a film forming method, and more particularly to a film forming method used in a method of manufacturing a circuit board.

[0002]

2. Description of the Related Art Conventionally, as a method for forming a film on a glass plate, a ceramic plate or an organic insulating substrate, a wet or dry film forming method such as plating or sputtering has been used. However, in such a method, a film is formed on the entire surface of the substrate. Therefore, if a film having a pattern is to be obtained, it is necessary to perform etching in a pattern thereafter. Therefore, since the process becomes complicated, it is difficult to form the pattern film promptly and it is also difficult to promptly deal with many kinds of patterns. There is also a method of forming a film of a precious metal or the like by applying a paste prepared by mixing fine particles of a precious metal or the like with a solvent, a binder, etc. in a pattern, drying and firing, but the adjustment, application or firing of the paste is complicated. It also requires a long time. In addition, there is a drawback that a dense film cannot be obtained because the binder is mixed in the film obtained by firing.

As a method for improving the above drawbacks,
A method for forming a patterned film by spraying ultrafine particles having a particle size of 1 μm or less from a nozzle onto a substrate is disclosed in Japanese Patent Publication No. 3-14.
It is shown in Japanese Patent Publication No. 512. Further, a method of forming a patterned film by a metal ion beam is disclosed in Japanese Patent Laid-Open No. 2-1.
No. 81984.

According to these methods, a patterned film can be directly formed on the substrate, the steps can be shortened and simplified, and various patterns can be quickly dealt with.

[0005]

However, in the above-mentioned conventional example, in the method of using ultrafine particles, since these particles are stacked to form a film, even in the case of ultrafine particles, the boundary portion of particles is different. At the same time, voids may remain at this boundary, and a sufficiently dense film cannot be obtained. Therefore, the electric resistance of this film is several times higher than that of bulk metal, and it is unsuitable for electronic circuits and semiconductor circuits. Further, in the method using the metal ion beam, it is difficult to increase the ion density and increase the film formation speed, and therefore the productivity is not good.

The present invention has been made in order to solve the above-mentioned problems, and an object thereof is to form a film directly in a pattern and obtain a dense film quality. It is an object of the present invention to provide a highly productive film forming method capable of obtaining a film speed.

[0007]

In order to solve the above-mentioned problems, the invention according to claim 1 heats a film material in a steam beam generating chamber provided in a high vacuum chamber to generate steam, and the steam is discharged from a nozzle. As a beam, a substrate arranged in a high vacuum chamber is irradiated with a pattern to form a vapor deposition film.

The invention according to claim 2 is characterized in that, in the invention according to claim 1, a plating film is further formed on the vapor deposition film.

According to a third aspect of the present invention, at least one layer of a multi-layer film formed by stacking two or more kinds of materials among a conductor material, an insulating material, a dielectric material and a resistor material on the same substrate is claimed. Item 1 or 2 is formed by the film forming method.

The invention according to claim 4 is characterized in that, in the invention according to claim 1, 2 or 3, the porous material provided in the vapor beam generating chamber is used by impregnating and holding a membrane material.

According to a fifth aspect of the present invention, in the first, second or third aspect of the present invention, an electrode is provided in the vapor beam generating chamber, at least one of which is a film material, and electric discharge is generated between the electrodes to generate vapor. Is configured as a feature.

According to a sixth aspect of the present invention, in the invention according to any one of the first to fifth aspects, a high frequency discharge, an electron shower or a hollow cathode discharge is added to the vapor beam emitted from the nozzle. It is configured as a feature.

The invention according to claim 7 is characterized in that, in the invention according to any one of claims 1 to 6, the nozzle is heated or ultrasonic vibration is applied to the nozzle.

[0014]

According to the first aspect of the invention, since the vapor beam generating chamber is provided in the high vacuum chamber and the vapor is generated in the high vacuum, the vapor is less likely to combine with each other into particles. Also,
A vapor deposition film is irradiated as a vapor beam from a nozzle onto a substrate arranged in a high vacuum chamber in a pattern to form a patterned vapor deposition film.

Therefore, since the vapor is composed of atoms, a dense vapor deposition film can be obtained, and since the vapor is composed of highly active atoms, an interfacial reaction is likely to occur on the substrate surface.

According to the second aspect of the invention, a plating film having a high film formation speed is further formed on the vapor deposition film formed by the vapor beam to form a thick film.

In the invention according to claim 3, at least one layer of the multilayer film is formed by the film forming method according to claim 1 or 2, and a dense vapor deposition film is obtained and the vapor deposition film is formed. Interfacial reactions are likely to occur on the surface. Further, as the material of the multilayer film, two or more kinds of materials such as a conductor material, an insulating material, a dielectric material or a resistor material are used and are formed on the same substrate in a stacked manner.

According to the fourth aspect of the invention, the material to be the vapor deposition film is impregnated and held in the porous body, and even if the material to be impregnated and held becomes a liquid, it is held in the porous body.

According to the fifth aspect of the present invention, vapor is generated by discharging between the solid electrodes, and the electrodes can be moved in three-dimensional directions. Further, a part of the vapor atoms can be ionized, and the energy of the vapor beam can be increased.

According to the sixth aspect of the present invention, the vapor beam emitted from the nozzle is subjected to high-frequency discharge, electron shower or hollow cathode discharge, and a part of the vapor beam is ionized into an ion beam having high energy.

According to the seventh aspect of the present invention, the atom attached to the nozzle is heated, or ultrasonic vibration is applied to the atom attached to the nozzle. Therefore, the atoms do not become vapor and adhere to the nozzle.

[0022]

Embodiments of the present invention will be described below with reference to the accompanying drawings.

The first embodiment will be described with reference to FIG. Figure 1
FIG. 3 is an explanatory diagram showing an example of a schematic configuration of an apparatus for performing the film forming method according to the present invention.

In FIG. 1, 1 is a vapor deposition film 15 on the surface thereof.
The substrate on which is formed various insulating materials can be used. Examples of the main ones include ceramic substrates such as alumina, aluminum nitride or sialon, thermosetting resin substrates such as polyimide, phenol or epoxy, polyetherimide, polyphenylene sulfide, polyether sulfone, polysulfone, polyphthalamide or A heat resistant thermoplastic resin substrate such as a liquid crystal polymer and a metal plate of an alloy such as aluminum, copper, iron or stainless steel having an insulating layer formed on the surface thereof are used. Further, the substrate 1 is attached to a substrate holder 2 having a built-in substrate heater.

Reference numeral 3 denotes a crucible for generating steam provided in the steam beam generating chamber 4, around which a heater 5 is arranged. Then, the film material 6 put in the crucible 3 is heated to become vapor, and the vapor is emitted from the nozzle 7 at the upper end of the crucible 3 onto the surface of the substrate 1 as a vapor beam 8. Further, 10 is a heat shield plate, and 9
Is a shutter for turning on and off the vapor beam 8.

The vapor beam generating chamber 4 is provided on the XY table 11 so as to be movable in the XY directions. The vapor beam 8 is radiated in a pattern on the substrate 1 to form a vapor deposition film in a pattern. 15 is formed. The substrate holder 3 is moved to form the vapor deposition film 15 in a pattern.
Can also be formed.

The vapor beam generating chamber 4 and the substrate holder 3 described above have a high vacuum chamber 12 whose pressure is reduced by a vacuum pump.
Irradiation with the vapor beam 8 is performed inside the high vacuum chamber 12. Further, 13 is an antenna for generating high frequency plasma, a high frequency power source is connected to the antenna 13, and argon gas or the like is introduced into the high vacuum chamber 12 as a gas for plasma generation from the valve 14. It

In order to form the patterned vapor-deposited film 15 on the substrate 1 using the above apparatus, first, the substrate 1 is set on the substrate holder 3 and the high vacuum chamber 12 is set to 0.1 to 0.01 Pascal. The pressure is reduced and the substrate 1 is heated to 100 to 200 ° C. Then, at this time, the argon gas is supplied to the valve 14
Further, the antenna 13 can be subjected to high-frequency discharge to generate argon plasma, and the substrate 1 can be cleaned with this plasma to improve the performance of the vapor deposition film 15 formed on the substrate 1.

The crucible 3 has a film material 6, for example,
By depositing copper and heating it to about 1600 ° C., the vapor pressure becomes 1 Torr, so that a sufficient film formation rate can be obtained. The diameter of the nozzle 7 is selected so as to correspond to the width of the pattern to be drawn, but is set to about 200 μm, for example. Then, the shutter 9 is opened and closed to turn the vapor beam 8 on and off, and the XY table 11 is moved to irradiate the vapor beam 8 in a pattern on the substrate 1 to form a patterned vapor deposition film 15. .

As described above, in this embodiment, the vapor beam 8 is drawn in a pattern on the substrate 1 and vapor-deposited to form the vapor-deposited film 15 in a pattern. Therefore, the vapor deposition film 15 having a direct pattern is formed directly without passing through an intermediate step such as etching, and the vapor deposition film 15 which becomes a circuit pattern is efficiently formed.

Further, since the steam is generated in the high vacuum chamber 12, it is difficult for the steam to combine with each other to form particles,
A dense vapor deposition film 15 is obtained by the vapor beam 8 composed of atoms, and the vapor is composed of highly active atoms.
The interfacial reaction is likely to occur and the adhesion is good and the deposited film 1 is formed on the substrate 1.
5 can be formed. Therefore, a high-quality vapor-deposited film 15 having high adhesion, high density, and low electric resistance is formed.

The second embodiment will be described with reference to FIG. Figure 2
[FIG. 3] is an explanatory view showing a schematic process of this example, and this process will be described below.

In this embodiment, the plating film 16 is further formed on the whole surface or a part of the vapor deposition film 15 formed in a pattern.
Are formed by stacking.

FIG. 2A shows a state in which a vapor deposition film 15 of a material to be a core of electroless plating is formed in a pattern on the substrate 1 by the same method as in the first embodiment. Evaporated film 1
Palladium or the like is used as 5. in this case,
By setting the heating temperature of the crucible 3 of Example 1 to about 1650 ° C., a vapor pressure of 0.1 at which a sufficient film formation rate can be obtained.
Can be Thor. 0.02μ in this way
The vapor deposition film 15 having a thickness of m is formed.

Further, the substrate 1 is immersed in an electroless plating solution for printed boards, for example, an electroless copper plating solution,
A 10 μm thick copper plating film 16 shown in (B) can be formed on the vapor deposition film 15, and a patterned film can be formed efficiently with a large film thickness.

Alternatively, electric field plating can be used. In this case, a vapor deposition film 15 of a material which becomes a base for electrolytic plating is formed on the substrate 1 in a pattern. Copper or nickel or the like is used as the vapor deposition film 15 for this purpose. In the case of nickel, the vapor pressure is such that a sufficient film formation rate can be obtained by heating the crucible 3 of Example 1 to about 1700 ° C. It can be 0.1 torr. In this way 0.
A vapor deposition film 15 having a thickness of 1 μm is formed.

Further, the deposited film 15 of the substrate 1 is electrolytically copper-plated to form a copper plating film 16 having a thickness of 10 μm as shown in (B) on the deposited film 15, and a patterned film having a large thickness is formed. To form. In particular, in this example using electric field plating, the deposition speed of the plated film 16 is faster than in the above example of electroless plating, so that the copper plated film 16 is formed more efficiently.

Further, in any of the above examples, the vapor deposition film 15 as the base is formed with good adhesiveness, and a thick patterned film with high adhesiveness can be formed.

The plating film 16 of copper can be selectively formed on the vapor deposition film 15 by plating a portion of the vapor deposition film 15 with a plating resist.

The third embodiment will be described below with reference to FIG. FIG. 3 is an explanatory view showing a schematic process of this embodiment, and this process will be described below.

In this embodiment, a conductor material, an insulating material, a dielectric material or a resistor material is used as the film material 6 of the first embodiment, and two or more kinds of vapor deposition films of these film materials 6 are the same. A multilayer film is formed by stacking on the substrate 1 to form a multilayer circuit board containing elements such as resistors and capacitors.

Further, as concrete examples of the material for the film material 6, inorganic materials such as alumina or glass and organic resin materials such as polyimide, parylene or epoxy are used as the insulating material. Nichrome, ruthenium oxide, or the like is used as the resistor material. As the dielectric material, alumina, lead titanate, barium titanate or the like is used. Further, as the conductor material, copper, nickel, aluminum, palladium,
Silver or gold can be used.

In FIG. 4, (A) shows the substrate 1 shown in the first embodiment. As shown in (B), a plurality of independent patterned vapor deposition films 15a of copper as a conductor material are formed on the substrate 1 in the same manner as in Example 1.

Further, as shown in (C), this substrate 1
A vapor deposition film 15b made of glass as an insulating material is formed on a portion of the vapor deposition film 15a to be an insulating layer. At this time, by putting sand sand (SiO ₂ ) into the crucible 3 and heating it to 1150 to 1200 ° C., it is possible to obtain a vapor pressure of 0.1 Torr at which a sufficient film formation rate can be obtained. Then, the vapor beam 8 thus obtained can be irradiated onto the substrate 1 while moving the substrate 1 to form a pattern of the planar glass vapor deposition film 15b.

Further, as shown in (D), a copper patterned vapor deposition film 15c intersecting with the copper patterned vapor deposition film 15a previously formed via the glass vapor deposition film 15b to be the insulating layer is formed. A multilayer film is formed to form a multilayer circuit on the substrate 1.

In the above embodiment, the glass vapor deposition film 15b is used as the dielectric material vapor deposition film 15a.
It is also possible to form a capacitor using the vapor-deposited film 15c and the vapor-deposited film 15c as electrodes, or to form a resistor between the patterned vapor-deposited films 15a using the glass vapor-deposited film 15b as a vapor-deposited film of a resistor material. . Furthermore, by combining these capacitors and resistors and the above-mentioned multilayer film, it is possible to form a multilayer circuit having capacitors and resistors built therein.

It is not necessary to form all types by the vapor beam 8 as described above, and a conventional method of applying a paste material or a method of attaching an insulating sheet can be combined.

As described above, in this embodiment, the vapor deposition films of the conductor material, the insulating material, the dielectric material or the resistor material are formed on the same substrate 1 so as to form a multilayer film. There is. At this time, since the respective materials are directly drawn on the substrate 1 to form the patterned vapor deposition films of the respective materials densely and with good adhesion, it is possible to form a high-quality multilayer circuit in a short time. Is what you can do.

The fourth embodiment will be described below with reference to FIGS. 4 and 5. FIG. 4 is an explanatory view showing a schematic configuration of an apparatus for carrying out this embodiment, and FIG. 5 is a perspective view showing a state where the vapor beam 8 is being irradiated.

In FIG. 4, reference numeral 17 is a porous body, and in this embodiment, the porous body 17 is impregnated with the material to be the vapor deposition film 15 to form the film material 6 in the crucible 3 of the first to third embodiments. . The porous body 17 can be formed by sintering a metal powder having a high melting point such as tungsten. And
A material to be the vapor deposition film 15 is brought into contact with the porous body 17 in a liquid state, for example, by melting the material.
It can be impregnated into the membrane material 6.

A more detailed description will be given below with reference to FIGS. 4 and 5. In FIG. 4, the heater 5 is provided on the upper part of the porous body 17, and the reservoir 18 in which the membrane material 6 is contained is formed. The film material 6 in the reservoir 18 is heated and melted by the heater 5 and impregnated into the porous body 17. Then, the substrate 1 is irradiated with the vapor beam 8 from the nozzle 7. Further, 10 is a heat shield plate, and 9 is a shutter for turning on / off the vapor beam 8. In addition, the formation of the vapor beam 8 may be promoted by flowing argon gas or the like as the auxiliary gas 22 from the outer periphery of the porous body 17 toward the nozzle 7.

FIG. 5 shows the vapor beam generating chamber 4 having the above construction.
It shows an example of moving the three-dimensional direction. In this figure, 1 is a three-dimensional substrate, the vapor beam generating chamber 4 is attached to a robot 19 and is housed in a high vacuum chamber 12.

As described above, the vapor beam generating chamber 4 is moved in the three-dimensional direction in accordance with the three-dimensional shape of the substrate 1 to irradiate the vapor beam 8 at a constant angle with respect to the surface of the substrate 1. It is possible to form a film with stable film quality. Further, since the moving speed of the vapor beam 8 with respect to the surfaces of various angles of the substrate 1 can be made constant and the amount of vapor deposition can be controlled corresponding to various surfaces of the three-dimensional shape, the film thickness can be obtained even in the three-dimensional shape. Can also be controlled constantly.

The fifth embodiment will be described below with reference to FIG. FIG. 6 is a sectional view showing a main part of an apparatus for carrying out this embodiment.

In this embodiment, the vapor beam generating chamber 4 such as the nozzle 7, the porous body 17 and the reservoir 18 of the fourth embodiment is used.
Is configured as follows.

That is, 20 is an electrode which is the film material 6, and is made of a metal wire such as copper, nickel or gold. Then, arc discharge is performed between the electrode 21 and an electrode 21 made of tungsten or the like which surrounds the electrode 20, and
Argon gas or the like is used as an auxiliary gas 22 for discharge in both electrodes 2
By flowing between 0 and 21, the vapor beam 8 is formed from the electrode 20. In addition, the portion of the electrode 20 excluding the tip portion and the portion of the electrode 21 excluding the nozzle 7 excluding the nozzle 7 are made of the insulator 2
3 and the arc discharge is generated between the tip of the electrode 20 and the nozzle 7.

Further, a voltage is applied to cause arc discharge, and the voltage at this time can be either direct current or alternating current, and high frequency can be superimposed on direct current.
At this time, by applying a voltage so that the electrode 20 side serves as an anode, the vaporized atom can be generated by positively ionizing the vaporized atoms.

As described above, also in this embodiment, since the film material 6 is the solid electrode 20, the vapor beam generating chamber 4 is three-dimensionally formed in accordance with the three-dimensional shape of the substrate 1 as in the fourth embodiment. The film can be moved in any direction, and stable film quality can be formed. In addition, the film thickness can be controlled to be always constant even in the case of a three-dimensional shape. Furthermore, since the energy of the vapor beam containing ions can be increased, an interfacial reaction with the surface of the substrate 1 is likely to occur, and the adhesion of the deposited film 15 to be formed can be increased.

The sixth embodiment will be described below with reference to FIG. FIG. 7 is a sectional view showing a main part of an apparatus for carrying out this embodiment.

In this example, the electrodes 20 and 21 of Example 5 were used.
Is configured as follows. That is, in FIG. 7, reference numeral 20 denotes an electrode which is the film material 6, and is supplied to the vicinity of the nozzle 7 from an external roll by using a metal wire such as copper, nickel or gold. Further, the electrode 21 is the nozzle 7
It is a hollow cathode that is housed in the outer body forming the. The electrode 21 has a tubular shape, and the auxiliary gas 22 is allowed to flow inside the electrode 21 to facilitate discharge.

In the above-mentioned state, the electrode 20 was used as an anode, and an arc discharge was generated between the electrode 20 and the electrode 21.
Similarly, the vaporized atoms are positively ionized to generate the vapor beam 8 containing the ions. Therefore, also in this embodiment, it is possible to form a film with stable film quality, and it is also possible to control the film thickness to be constant at all times even in the case of a three-dimensional shape. Furthermore, the adhesion of the deposited film 15 formed can be increased.

The seventh embodiment will be described below with reference to FIG. FIG. 8 is a sectional view showing a main part of an apparatus for carrying out this embodiment.

In this embodiment, a high-frequency discharge, an electron shower or a hollow cathode discharge is applied to the vapor beam 8 formed by the various methods described above to ionize a part of the vapor beam 8 and vapor containing ions. The beam 8 is applied to the surface of the substrate 1. An example of the configuration for this will be described below with reference to FIG.

In FIG. 8, 4 is the same as the vapor beam generating chamber 4 including the nozzle 7, the porous body 17, the reservoir 18 and the like shown in FIG. 4 of the fourth embodiment. The vapor beam 8 emitted from the nozzle 7 of the vapor beam generating chamber 4 to the substrate 1 passes through the high frequency applying coil 24, the ion accelerating electrode 25 and the substrate 1 to form a patterned vapor deposition film 15. To be done. In the high frequency applying coil 24, 13.
The high frequency of 56MHz100W is applied and the vapor beam 8
A part of is ionized. In addition, the ion acceleration electrode 25
Then, 100 V is applied to accelerate the ions and irradiate the substrate 1.

With the above configuration, the vapor beam generating chamber 4
, The vapor beam generation chamber 4 is kept in a simple structure and a part of the vapor beam 8 is ionized to increase the energy of the vapor beam 8 and the vapor deposition film 15 having high adhesion is formed on the substrate 1. Is forming. The energy of the vapor beam 8 is also increased by the ion acceleration electrode 25.

The eighth embodiment will be described below with reference to FIGS. 9 and 10. 9 and 10 are explanatory views showing an example of a schematic configuration of an apparatus for carrying out this embodiment.

In this embodiment, as shown in FIG. 9, a heater 26 for heating the nozzle is provided around the nozzle 7 in the apparatus of the first embodiment and heated to the same temperature as the heating temperature of the film material 6. There is. Further, as shown in FIG. 10, an ultrasonic vibrator 27 may be provided near the nozzle 7 to apply ultrasonic vibration to the nozzle 7.

As described above, the atoms attached to the nozzle 7 are heated, or ultrasonic vibration is applied to the atoms attached to the nozzle 7, so that the atoms become vapor and attach to the nozzle 7. Absent. Therefore, the nozzle 7 is not clogged, and stable film formation can always be performed.

[0069]

According to the first aspect of the present invention, a vapor beam is irradiated in a pattern on a substrate to form a patterned vapor deposition film. Therefore, the patterned vapor-deposited film is directly formed on the substrate without passing through an intermediate step such as etching, and the vapor-deposited film having an efficient circuit pattern is formed.

Further, since the vapor is generated in a high vacuum, it is difficult for the vapor to combine with each other to form particles, and a dense vapor deposition film can be obtained by the beam of vapor composed of atoms, and the vapor has high activity. Since it is composed of atoms, an interfacial reaction is likely to occur and a deposited film can be formed on the substrate with good adhesion. Therefore, it is possible to form a high-quality vapor-deposited film that has high adhesion, is dense, and has good conductivity, and form a circuit pattern.

According to a second aspect of the present invention, a plating film having a high film forming speed is formed over the entire surface or selectively on the vapor-deposited film formed by the vapor beam. The film can be efficiently formed. Further, since the vapor deposition film formed by the vapor beam as the base has good adhesiveness, it is possible to form a thick film-like film having high adhesiveness and a film thickness.

In a third aspect of the present invention, at least one layer of the multilayer film is formed by the film forming method according to the first or second aspect of the present invention to obtain a dense vapor deposition film, and the vapor deposition film is formed. Interfacial reactions are likely to occur on the surface. Therefore, a film having good adhesion and good quality such as conductivity and insulation can be obtained as a vapor deposition film.

Further, by combining the film formation by sputtering, the film formation by plating, etc., the advantages of the respective film forming methods can be utilized. For example, a thin film of an insulating material can be efficiently formed on the entire surface by sputtering, and a thick film can be efficiently formed by plating.

According to a fourth aspect of the present invention, the film material is tilted at various angles corresponding to the three-dimensional surface of various angles,
The vapor beam can be irradiated onto the surface of the substrate at a constant angle, and a vapor deposition film with stable film quality can be formed. In addition, since the moving speed of the vapor beam relative to the surface can be controlled to control the amount of vapor substance to be attached to various surfaces of a three-dimensional shape, the film thickness can always be controlled to be constant even in the three-dimensional shape. You can also do it.

The invention according to claim 5 can achieve the same effect as the invention according to claim 4 described above, and the energy of the vapor beam can be increased by discharging between the electrodes to generate vapor. It is possible to facilitate the occurrence of an interfacial reaction with the surface of the substrate and enhance the adhesion of the deposited film to be formed.

According to the sixth aspect of the invention, the vapor beam emitted from the nozzle is subjected to high-frequency discharge, electron shower or hollow cathode discharge, and a part of the vapor beam is ionized to become an ion beam having high energy. Therefore,
The reactivity with respect to the substrate surface can be enhanced, and a film having good adhesion can be formed.

According to the seventh aspect of the present invention, the atoms attached to the nozzle are heated, or ultrasonic vibration is applied to the atoms attached to the nozzle, so that the atoms do not become vapor and attach to the nozzle. . Therefore, the nozzle is not clogged, and stable film formation can always be performed.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing an example of a schematic configuration of an apparatus for carrying out a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a schematic process of Example 2 of the present invention.

FIG. 3 is an explanatory diagram showing the schematic steps of Example 3 of the present invention.

FIG. 4 is an explanatory diagram showing an example of a schematic configuration of an apparatus for carrying out Example 4 of the present invention.

FIG. 5 is a perspective view showing a vapor beam irradiation state of the above embodiment.

FIG. 6 is a sectional view showing a main part of an apparatus for carrying out a fifth embodiment of the present invention.

FIG. 7 is a sectional view showing a main part of an apparatus for carrying out a sixth embodiment of the present invention.

FIG. 8 is a sectional view showing a main part of an apparatus for carrying out a seventh embodiment of the present invention.

FIG. 9 is an explanatory diagram showing an example of a schematic configuration of an apparatus for carrying out an eighth embodiment of the present invention.

FIG. 10 is an explanatory diagram showing an example of a schematic configuration of an apparatus for carrying out the above embodiment.

[Explanation of symbols] 1 substrate 2 substrate holder 3 crucible 4 vapor beam generating chamber 5 heater 6 film material 7 nozzle 8 vapor beam 9 shutter 10 heat shield plate 11 XY table 12 high vacuum chamber 13 high frequency plasma generation antenna 14 valve 15 film 16 Copper plating film 17 Porous body 18 Reservoir 19 Robot 20 Electrode 21 Electrode 22 Auxiliary gas 23 Insulator 24 High frequency applying coil 25 Ion accelerating electrode 26 Heater for nozzle 27 Ultrasonic transducer

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Yoshiyuki Uchino Matsuda Electric Works Co., Ltd. 1048 Kadoma, Kadoma City, Osaka Prefecture

Claims (7)

[Claims] 1. A film material is heated in a vapor beam generation chamber provided in a high vacuum chamber to generate vapor, and the vapor is irradiated as a vapor beam onto a substrate arranged in the high vacuum chamber in a pattern. A method for forming a film, which comprises forming an evaporated film. 2. The film forming method according to claim 1, wherein a plating film is further formed on the vapor deposition film. 3. The multilayer film according to claim 1, wherein at least one layer of a multi-layer film is formed by stacking two or more kinds of materials selected from a conductive material, an insulating material, a dielectric material and a resistive material on the same substrate. A film forming method, characterized in that the film is formed by a film forming method. 4. The porous material provided in the vapor beam generating chamber is used by being impregnated with and holding a membrane material.
Alternatively, the film forming method described in 3. 5. The film forming method according to claim 1, 2 or 3, wherein an electrode, at least one of which is a film material, is provided in the vapor beam generating chamber, and vapor is generated by discharging between the electrodes. 6. The film forming method according to claim 1, wherein a high frequency discharge, an electron shower or a hollow cathode discharge is applied to the vapor beam emitted from the nozzle. 7. The film forming method according to claim 1, wherein the nozzle is heated or ultrasonic vibration is applied to the nozzle.