JP2675657B2 - Method for forming through holes in printed circuit boards - Google Patents
Method for forming through holes in printed circuit boardsInfo
- Publication number
- JP2675657B2 JP2675657B2 JP2193249A JP19324990A JP2675657B2 JP 2675657 B2 JP2675657 B2 JP 2675657B2 JP 2193249 A JP2193249 A JP 2193249A JP 19324990 A JP19324990 A JP 19324990A JP 2675657 B2 JP2675657 B2 JP 2675657B2
- Authority
- JP
- Japan
- Prior art keywords
- hole
- conductor
- conductor material
- substrate
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
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- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は、配線回路板のスルーホール形成方法に関
し、詳しくは、半導体素子の搭載基板等として利用され
る配線回路板の製造において、配線回路板の表裏を貫通
する導体構造であるスルーホールを形成する方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming through holes in a wiring circuit board, and more specifically, in the manufacture of a wiring circuit board used as a mounting board for semiconductor elements, etc. The present invention relates to a method of forming a through hole which is a conductor structure that penetrates the front and back of a plate.
配線回路板のうち、特に微細かつ高品質な配線回路が
必要となる半導体素子の搭載基板等には、従来のメッキ
法等に代えて、真空蒸着やスパッタリング等の薄膜形成
手段で導体膜その他の機能性膜を形成する方法が提案さ
れている。Among wiring circuit boards, particularly for mounting boards for semiconductor elements that require fine and high-quality wiring circuits, instead of the conventional plating method or the like, a conductor film or other material is formed by thin film forming means such as vacuum deposition or sputtering. A method of forming a functional film has been proposed.
この薄膜形成手段による膜の形成は、セラミック基板
に対して比較的容易に導体膜が形成できることや、導体
膜だけでなく絶縁体や抵抗体、誘電体等の各種機能性膜
も同様の方法で膜形成できること、不純物の少ない高品
質の膜を形成できること、基板表面と導体膜との接合面
における表面粗さを細かくできることにより表皮抵抗の
小さな高周波特性に優れた配線回路板が製造できること
等の利点を有している。The formation of the film by this thin film forming means is that the conductor film can be formed relatively easily on the ceramic substrate and that not only the conductor film but also various functional films such as insulators, resistors and dielectrics can be formed by the same method. Advantages of being able to form a film, forming a high-quality film with few impurities, and being able to manufacture a printed circuit board with low skin resistance and excellent high-frequency characteristics by making the surface roughness of the joint surface between the substrate surface and the conductor film fine. have.
前記のような薄膜形成手段で配線回路板の導体膜を形
成する場合、基板の表裏面の配線回路を接続したり各種
素子部品の搭載に利用する、いわゆるスルーホールの形
成については、基板の表面に導体膜を形成するのと同じ
工程で、スルーホール用孔の内面にも導体膜を形成させ
るようにしている。When forming the conductor film of the wiring circuit board by the thin film forming means as described above, the so-called through holes used for connecting the wiring circuits on the front and back surfaces of the substrate and for mounting various element parts are used. The conductor film is also formed on the inner surface of the through-hole hole in the same step as that for forming the conductor film.
例えば、スパッタリング法では、第12図に示すよう
に、処理室1内で、基板2の表面と対向する位置に一定
の距離(通常、数10mm以上)をおいて設置されたカソー
ド3上に、Cu等の導体材料からなるターゲット4を装着
しておき、処理室1内を真空排気口5に接続された真空
ポンプ(図示せず)で真空排気するとともに、同じく処
理室1に設けられた供給口6からArガス等を導入し、カ
ソード3に電圧を印加してターゲット4をプラズマ化さ
せ、基板2の表面にターゲット4の導体材料を堆積させ
て膜形成する。基板2にスルーホール用孔2aを形成して
おけば、このスルーホール用孔2aの内面にも導体材料が
堆積するので、基板2表面の導体膜と同時にスルーホー
ルも形成されるというものである。上記説明はスパッタ
リング法に関するものであるが、真空蒸着法等の薄膜形
成手段でも、基本的には同様の処理方法でスルーホール
が形成される。For example, in the sputtering method, as shown in FIG. 12, on the cathode 3 installed in the processing chamber 1 at a position facing the surface of the substrate 2 with a certain distance (usually several tens mm or more), A target 4 made of a conductive material such as Cu is attached to the processing chamber 1, and the inside of the processing chamber 1 is evacuated by a vacuum pump (not shown) connected to an evacuating port 5, and a supply is also provided in the processing chamber 1. Ar gas or the like is introduced from the port 6, a voltage is applied to the cathode 3 to turn the target 4 into plasma, and the conductor material of the target 4 is deposited on the surface of the substrate 2 to form a film. If the through hole 2a is formed in the substrate 2, the conductor material is also deposited on the inner surface of the through hole 2a, so that the through hole is formed simultaneously with the conductor film on the surface of the substrate 2. . Although the above description relates to the sputtering method, a through hole is basically formed by the same processing method even by a thin film forming means such as a vacuum evaporation method.
ところが、上記したような、従来の薄膜形成手段によ
るスルーホールの形成方法では、スルーホール用孔の内
面に十分な厚みの導体膜が形成されず、スルーホールの
品質性能に劣るという問題があった。However, in the above-described method of forming a through hole by the conventional thin film forming means, there is a problem that the conductor film having a sufficient thickness is not formed on the inner surface of the through hole hole, resulting in poor quality performance of the through hole. .
これは、以下に説明するような原因によるものと考え
られる。It is considered that this is due to the causes described below.
前記第12図に示したような従来の処理方法では、ター
ゲット4と対面する基板2の前面に対して、ほぼ均等に
導体材料が到達する。したがって、スルーホール用孔2a
の内部まで到達する導体材料の量は、ターゲット4に対
面するスルーホール用孔2aの端面に到達する導体材料の
量に等しいかそれ以下になる。In the conventional processing method as shown in FIG. 12, the conductive material reaches the front surface of the substrate 2 facing the target 4 almost uniformly. Therefore, the through hole 2a
The amount of the conductor material reaching the inside of is equal to or less than the amount of the conductor material reaching the end face of the through hole hole 2a facing the target 4.
そこで、第13図に示すように、基板2の厚みT、基板
2の表面に形成された導体膜4aの厚みt0、スルーホール
用孔2aの内径d、スルーホール用孔2aの内面に均一な厚
みの導体膜が形成されたとしたときの導体膜4bの厚みt
として、これらの関係を求めると、下式のようになる。Therefore, as shown in FIG. 13, the thickness T of the substrate 2, the thickness t 0 of the conductor film 4a formed on the surface of the substrate 2, the inner diameter d of the through hole 2a, and the inner surface of the through hole 2a are uniform. The thickness t of the conductor film 4b when a conductor film having a uniform thickness is formed.
Then, when these relations are obtained, the following equation is obtained.
π(d/2)2t0≒πd(T+t0)t …(1) (1)式を近似すると、 t≒dt0/4(T+t0) …(2) (2)式で、例えば、T=0.635、t0=0.01と仮定し
て、dを変化させたときのtおよびt/t0の値を求めた結
果を下記第1表に示す。When π (d / 2) 2 t 0 ≒ πd (T + t 0) t ... (1) (1) approximates the equation, t ≒ dt 0/4 ( T + t 0) ... (2) (2) In formula, for example, Table 1 below shows the results of obtaining the values of t and t / t 0 when d was changed under the assumption that T = 0.635 and t 0 = 0.01.
上記表の結果をみれば、基板表面の導体膜4aの厚さt0
に比べて、スルーホール内面の導体膜4bの厚さtが非常
に薄く、しかも、スルーホール用孔2aの内径dが小さく
なるほど、スルーホール内面の導体膜4bの厚さtが薄く
なってしまうことが判る。例えば、d/Tが1以下になる
と、基板表面の導体膜4aの厚さt0の2割以下の厚みしか
形成されないことになる。 From the results in the above table, the thickness t 0 of the conductor film 4a on the substrate surface is
As compared with the above, as the thickness t of the conductor film 4b on the inner surface of the through hole is very thin and the inner diameter d of the hole 2a for through hole becomes smaller, the thickness t of the conductor film 4b on the inner surface of the through hole becomes smaller. I understand. For example, when d / T is 1 or less, only the thickness of 20% or less of the thickness t 0 of the conductor film 4a on the substrate surface is formed.
このように、従来の処理方法では、スルーホール用孔
2aの内壁に十分な厚さの導体膜を形成するのが極めて困
難である。Thus, in the conventional processing method, the through hole
It is extremely difficult to form a conductor film having a sufficient thickness on the inner wall of 2a.
さらに、第14図に示すように、ターゲット4から基板
2のスルーホール用孔2aの内面に到達する導体材料は、
ターゲット4に近いスルーホール用孔2aの入口側に堆積
し易く、ターゲット4に遠いスルーホール用孔2aの奥側
まで到達する導体材料の割合が少なくなってしまうとい
う問題もある。そのため、スルーホール用孔2aの内面
で、場所によって導体膜4bの厚みに差が出来、入口側に
比べて奥側の厚みが薄くなってしまい、結果としてスル
ーホールの抵抗値が大きくなってしまったり、場合によ
っては、導通不良を起こすこともある。Further, as shown in FIG. 14, the conductor material reaching the inner surface of the through hole 2a of the substrate 2 from the target 4 is
There is also a problem that it is easy to deposit on the inlet side of the through-hole 2a close to the target 4, and the proportion of the conductive material reaching the back of the through-hole 2a far from the target 4 decreases. Therefore, on the inner surface of the through-hole 2a, the thickness of the conductor film 4b may differ depending on the location, and the thickness on the back side becomes smaller than that on the inlet side, resulting in an increase in the resistance value of the through-hole. In some cases, it may cause slump or poor conduction.
そこで、この発明の課題は、導体膜の品質性能に優れ
た薄膜形成手段による配線回路板のスルーホール形成方
法において、スルーホール用孔の内面に形成される導体
膜の厚みを内面全体にわたって十分に確保でき、導通抵
抗が小さく導通不良を起こす心配もない高品質なスルー
ホールを形成する方法を提供することにある。Therefore, an object of the present invention is to provide a through-hole forming method for a printed circuit board by means of a thin film forming means having excellent quality performance of a conductor film, and to ensure that the thickness of the conductor film formed on the inner surface of the through-hole is sufficient over the entire inner surface. (EN) It is possible to provide a method of forming a high-quality through hole which can be secured and has a small conduction resistance without causing a conduction failure.
上記課題を解決する、この発明にかかる配線回路板の
スルーホール形成方法は、基板に設けられた個々のスル
ーホール用孔に近接して導体材料源を配置し、この導体
材料源を放電により加熱して蒸発さてスルーホール用孔
の内面に被着させる。A through-hole forming method for a printed circuit board according to the present invention, which solves the above-mentioned problems, provides a conductor material source in the vicinity of each through-hole provided on a substrate, and heats the conductor material source by discharge. Then, it is evaporated and deposited on the inner surface of the through hole hole.
基板としては、配線回路板の用途に合わせて、セラミ
ックス、ガラス、合成樹脂、その他の材料からなる通常
の配線回路板用の基板材料が自由に使用できる。基板に
は、通常の加工手段でスルーホール用孔を形成してお
く。スルーホール用孔の口径やアスペクト比等は自由に
設定できる。As the substrate, an ordinary substrate material for a wiring circuit board, which is made of ceramics, glass, synthetic resin, or other material, can be freely used according to the application of the wiring circuit board. Through holes are formed in the substrate by a usual processing means. The diameter and aspect ratio of the through hole can be set freely.
導体材料源としては、Cu、Au等、通常の配線回路板で
用いられている各種金属あるいは金属化合物等からなる
導体材料のうち、放電や通電加熱等により蒸発させて膜
形成させることが可能な材料を用いる。As the conductive material source, it is possible to form a film by evaporating by a discharge, electric heating or the like among conductive materials made of various metals or metal compounds used in ordinary printed circuit boards such as Cu and Au. Use material.
導体材料源は、基板に形成された個々のスルーホール
用孔毎に、スルーホール用孔に近接して配置する。すな
わち、導体材料源を放電により加熱して蒸発させた導体
材料が、個々のスルーホール用孔の内面全体に容易に到
達することができるように、スルーホール用孔の内部空
間、あるいは、スルーホール用孔の両側端面のすぐ外側
等に導体材料源を配置するものとする。The conductor material source is arranged close to the through hole hole for each through hole hole formed in the substrate. That is, the inner space of the through-hole or the through-hole is arranged so that the conductive material obtained by heating the source of conductive material by vaporization and evaporating can easily reach the entire inner surface of each through-hole. The source of conductive material shall be placed just outside both end faces of the hole.
導体材料源を蒸発させてスルーホール用孔の内面に被
着させる手段としては、基本的には通常の薄膜形成出手
段と同様の原理もしくは機構が適用できるが、スルーホ
ール用孔の内面に良好な導体膜を形成させるために以下
の構成をとるのが好ましい。As a means for evaporating the conductive material source and depositing it on the inner surface of the through-hole, basically the same principle or mechanism as in the ordinary thin film forming / applying means can be applied, but the inner surface of the through-hole is well-suited. In order to form a different conductor film, the following constitution is preferable.
まず、導体材料源として、導体材料からなる一対の放
電電極をスルーホール用孔を挟んで基板の両側に配置
し、減圧雰囲気下において、前記一対の放電電極間に電
圧を印加し放電させることによって導体材料からなる放
電電極を蒸発させる方法が採用できる。First, as a conductor material source, a pair of discharge electrodes made of a conductor material is arranged on both sides of the substrate with a hole for a through hole interposed therebetween, and a voltage is applied between the pair of discharge electrodes under a reduced pressure atmosphere to cause discharge. A method of evaporating the discharge electrode made of a conductive material can be adopted.
導体材料からなる一対の放電電極は、互いの間で放電
し易いように、放電電極の対向する先端を、鋭角状また
は針状に尖らせておくことが好ましい。また、放電電極
同士の間隔が短いほど放電が起こし易いので、放電電極
を出来るだけ基板もしくはスルーホール用孔に近づけて
配置しておくのが好ましく、具体的には、放電電極と基
板表面との間隔を約1mm以下に設定する。放電電極は、
電極全体を基板の両側外部に配置しておくほか、対向す
る放電電極と接触しない程度に、放電電極の一部がスル
ーホール用孔の内部に入り込んで配置されるようになっ
ていてもよい。放電電極は放電により導体材料が消費さ
れて減っていくので、同じ放電電極を用いて繰り返し処
理を行う場合は、必要に応じて、導体材料が減った分だ
け放電電極の位置を調整したり、放電電極の形状を修正
したりすればよい。It is preferable that the pair of discharge electrodes made of a conductive material have sharp ends facing each other in an acute angle or a needle shape so that the discharge electrodes can easily discharge each other. Further, since the shorter the distance between the discharge electrodes is, the easier the discharge is, it is preferable to dispose the discharge electrodes as close to the substrate or through-hole as possible. Set the interval to about 1 mm or less. The discharge electrode is
The entire electrode may be arranged outside both sides of the substrate, or a part of the discharge electrode may be arranged so as to enter the inside of the through hole hole to the extent that it does not come into contact with the opposing discharge electrode. Since the discharge electrode consumes and reduces the conductor material due to discharge, when performing repeated treatment using the same discharge electrode, if necessary, adjust the position of the discharge electrode by the amount corresponding to the decrease in the conductor material, The shape of the discharge electrode may be modified.
放電電極に電圧を印加して放電させる際には、基板お
よび放電電極が収容された処理室の雰囲気を減圧雰囲気
下におくことによって、放電し易くなるとともに、スル
ーホール用孔の内面に良好な導体膜が形成される。具体
的に減圧雰囲気下とは、処理室内を真空排気するととも
に、処理室内にArガス等の不活性ガスを導入して、この
不活性ガス圧が数Torr〜数10Torrの間になるように設定
しておくのが好ましい。具体的な不活性ガス圧の設定
は、いわゆるパッシェンの法則を考慮するなどして、通
常の薄膜形成方法と同様に行うことができる。When a voltage is applied to the discharge electrode to cause discharge, the atmosphere in the processing chamber in which the substrate and the discharge electrode are housed is kept in a reduced pressure atmosphere to facilitate discharge and to improve the inner surface of the through hole hole. A conductor film is formed. Specifically, in a decompressed atmosphere, the processing chamber is evacuated and an inert gas such as Ar gas is introduced into the processing chamber so that the pressure of the inert gas is set between several Torr and several 10 Torr. It is preferable to keep it. The specific setting of the inert gas pressure can be performed in the same manner as in the normal thin film forming method, taking into consideration the so-called Paschen's law.
放電電極に印加する電圧は、処理開始時は放電電極に
放電を起こさせるのに十分な放電開始電圧以上の電圧に
設定しておき、放電が開始されれば、放電アークが拡が
って基板等にダメージを与えないように、印加電圧を下
げて、放電を維持するのに必要な放電維持電圧で放電を
行わせるのが好ましい。放電維持電圧としては、スルー
ホール用孔の内径や雰囲気のガス圧、放電電極間の間隔
等の諸条件によっても異なるが、通常、数10V程度が好
ましい。The voltage applied to the discharge electrode is set to a voltage equal to or higher than the discharge start voltage sufficient to cause discharge at the discharge electrode at the start of processing, and when discharge is started, the discharge arc expands to the substrate, etc. It is preferable to lower the applied voltage so as not to give damage so that the discharge is performed at the discharge sustaining voltage necessary for sustaining the discharge. The discharge sustaining voltage varies depending on various conditions such as the inner diameter of the through hole hole, the gas pressure of the atmosphere, the distance between the discharge electrodes, etc., but is usually about several tens of volts.
基板に多数のスルーホール用孔が設けられている場
合、一対の放電電極のみを用いて、各スルーホール用孔
の位置に放電電極を移動させて、放電による導体膜の形
成を行ってもよいが、各スルーホール毎に別々の複数組
の放電電極を用いてもよい。複数組の放電電極を使用す
る場合、各スルーホール用孔毎に独立した一対の放電電
極およびこれに電圧を印加するための配線回路と電源を
設けておいてもよいし、複数組の放電電極をひとつの電
源につながる配線で電圧印加してもよい。複数のスルー
ホール用孔に配置された放電電極には、基板全体で、同
時に電圧を印加してスルーホール用孔の内面に導体膜を
形成させれば能率的に処理が行える。複数組の放電電極
に同じ電源から順次配線を切り換えて電圧を印加するよ
うにすれば、電源の容量が小さくても処理することが可
能になる。When the substrate is provided with a large number of through-hole holes, the discharge electrodes may be moved to the positions of the through-hole holes using only a pair of discharge electrodes to form the conductor film by discharge. However, a plurality of different sets of discharge electrodes may be used for each through hole. When a plurality of sets of discharge electrodes are used, an independent pair of discharge electrodes for each through-hole and a wiring circuit for applying a voltage to the discharge electrodes and a power supply may be provided, or a plurality of sets of discharge electrodes may be provided. May be applied with a voltage through a wiring connected to one power source. A voltage can be simultaneously applied to the discharge electrodes arranged in the plurality of through-holes to form a conductor film on the inner surfaces of the through-holes, whereby efficient processing can be performed. By sequentially switching wirings from the same power source to apply a voltage to a plurality of sets of discharge electrodes, it is possible to process even if the capacity of the power source is small.
また、多数の鋭角な尖端部が並設された一対の放電電
極に電圧を印加しながら、放電電極の対向面と平行に基
板を相対移動させれば、放電電極の尖端部同士の間をス
ルーホール用孔が通過する際に、放電電極間の最短経路
を構成するスルーホール用孔を通して放電が起こり、そ
の部分のスルーホール用孔内面に導体膜が形成される。
通常、放電電極間の最短経路を構成するスルーホール用
孔は、対向する放電電極の尖端部を結ぶ線がスルーホー
ル用孔の中心軸に一致するものである。したがって、基
板の通過に伴って、放電電極間の最短経路を構成するス
ルーホール用孔が順番に移動していくことになるので、
複数のスルーホール用孔の全てに連続的に導体膜を形成
することができる。In addition, if voltage is applied to a pair of discharge electrodes in which a large number of sharp tips are arranged in parallel, and the substrate is relatively moved in parallel with the facing surface of the discharge electrodes, the gap between the sharp tips of the discharge electrodes is passed. When the hole for hole passes, discharge occurs through the hole for through hole forming the shortest path between the discharge electrodes, and a conductor film is formed on the inner surface of the hole for through hole at that portion.
Normally, in the through-hole hole that constitutes the shortest path between the discharge electrodes, the line connecting the tip portions of the opposing discharge electrodes coincides with the central axis of the through-hole hole. Therefore, as the substrate passes, the through-hole holes that form the shortest path between the discharge electrodes move in order,
The conductor film can be continuously formed in all of the plurality of holes for through holes.
つぎに、上記した放電を利用する方法とは異なる方法
について説明する。すなわち、導体材料源として、導体
材料からなる細線をスルーホール用孔に貫挿配置し、真
空雰囲気下において、前記導体材料細線に通電すること
によって導体材料細線を蒸発させる方法である。Next, a method different from the above-mentioned method using discharge will be described. That is, as a conductor material source, a thin wire made of a conductor material is inserted through a hole for a through hole, and the conductor material thin wire is evaporated in a vacuum atmosphere by energizing the conductor material thin wire.
導体材料細線は、前記した導体材料源となる材料を用
いる他は、通常の配線用導線と同様の手段で製造でき
る。線径は、少なくともスルーホール用孔に貫挿可能な
太さ以下であるとともに、導体材料が蒸発してスルーホ
ール用孔の内面に堆積被着したときに、十分な厚みの導
体膜を構成できるだけの導体材料を供給できる太さを有
していなければならない。具体的な線径は、スルーホー
ルの目的や要求性能等によっても異なるが、通常の条件
では、下式によって決定される線径d1程度が好ましい。The fine conductor material wire can be manufactured by the same means as the ordinary conductor wire for wiring except that the above-mentioned material serving as the conductor material source is used. The wire diameter is at least not more than the thickness that can be inserted into the through hole hole, and a conductor film having a sufficient thickness can be formed when the conductor material is evaporated and deposited on the inner surface of the through hole hole. The thickness of the conductor material must be large enough to supply the conductor material. Although the specific wire diameter varies depending on the purpose of the through hole, the required performance, etc., under normal conditions, the wire diameter d 1 determined by the following formula is preferable.
k:補正係数 d2:スルーホール用孔内径 t:導体膜の所要膜厚 補正係数kは、処理条件により実験または経験等に基
づいて求めた値を用いる。 k: correction coefficient d 2 : through hole hole inner diameter t: required film thickness of conductor film The correction coefficient k is a value obtained based on experiments, experience, etc. depending on the processing conditions.
導体材料細線は、スルーホール用孔に貫挿配置した状
態で通電できるように配線し電源に接続する。導体材料
細線は、スルーホール用孔の内部のみ、もしくは、内部
と両端外部近傍に存在していればよいので、導体材料細
線には基板の外部で通常の配線用導体を接続しておく。
この配線用導体は、導体材料細線とは異なり、通電した
ときに蒸発してしまわないような材料および線径からな
るものを用いるのが好ましい。The thin conductor material wire is wired and connected to a power source so that it can be energized in a state of being inserted through the through hole. Since the fine conductor material wire may be present only inside the through hole hole or in the vicinity of the inside and both ends of the through hole, a normal wiring conductor is connected to the fine conductor material wire outside the substrate.
Unlike the thin conductor material wire, it is preferable to use a material and a wire diameter that do not evaporate when electricity is applied to the conductor for wiring.
導体材料細線に通電する電流は、導体材料細線を短時
間で蒸発させてスルーホール用孔の内面に被着できるよ
うに、比較的大電流を流すのが好ましい。例えば、線径
0.1mmの銅線の場合、約50A以上の電流を流せば、約0.1
秒以内に導体膜の形成が行える。導体材料細線に通電し
て、導体材料細線が完全に蒸発すれば、それ以後は電流
は流れなくなる。It is preferable that a current flowing through the thin conductor material wire be a relatively large current so that the thin conductor material wire can be vaporized in a short time and deposited on the inner surface of the through-hole. For example, wire diameter
In the case of 0.1mm copper wire, about 0.1
The conductor film can be formed within seconds. When the fine conductor material wire is energized and the fine conductor material wire is completely evaporated, no current flows thereafter.
導体材料細線に通電する際の雰囲気は、真空雰囲気で
行う。一般に、真空度が高いほど導体材料細線の蒸発お
よび導体膜の形成が良好に行われ、高品質の導体膜が形
成できるが、実用性や生産性等をも考慮して、通常の薄
膜形成方法で採用されている程度の真空度で行えばよ
い。The atmosphere for energizing the thin conductor material wire is a vacuum atmosphere. Generally, the higher the degree of vacuum, the better the evaporation of the conductor material fine wire and the formation of the conductor film, and the formation of a high-quality conductor film. However, in consideration of practicality and productivity, the ordinary thin film forming method is used. The degree of vacuum used in the above may be used.
多数のスルーホール用孔を備えた基板にスルーホール
を形成する場合、各スルーホール用孔毎に貫挿配置した
導体材料細線に対して、同時に通電して一斉に導体膜を
形成させれば能率的に作業が行える。また、配線を順次
切り換える通して、複数の導体材料細線に順番に通電し
ていくようにすれば、比較的容量の小さな電源でも処理
できるようになる。When forming a through hole on a substrate with a large number of through hole holes, it is efficient to simultaneously energize the conductor material thin wires that are inserted and arranged for each through hole hole to simultaneously form a conductor film. Work can be done. Further, if the plurality of thin conductor material wires are sequentially energized by sequentially switching the wiring, it is possible to process with a power source having a relatively small capacity.
さらに、多数のスルーホール用孔に貫挿配置されたそ
れぞれの導体材料細線の一端を、全て結線してアース電
位等の同電位に保っておくとともに、導体材料細線の他
端は、それぞれ開放状態にしておき、電源に接続された
接触子を走査して、それぞれの導体材料細線の他端に順
次接触させて、その部分の導体材料細線に電流を流すよ
うにすれば、多数のスルーホール用孔に簡単かつ能率的
に導体膜を形成することができる。Further, one end of each thin conductor material wire inserted through the many through-holes is connected and kept at the same potential such as ground potential, and the other end of each thin conductor material wire is opened. Then, the contacts connected to the power source are scanned, and the other ends of the respective conductor material thin wires are sequentially contacted, and an electric current is caused to flow through the conductor material thin wires in that portion. The conductor film can be formed in the holes easily and efficiently.
上記方法では、導体材料細線すなわち導体材料源自体
に通電して蒸発させたが、つぎに述べるように、導体材
料とは別に通電により発熱する発熱線を用いて、導体材
料に間接的に加熱して蒸発させることもできる。In the above method, the conductor material thin wire, that is, the conductor material source itself is energized to evaporate.However, as described below, the conductor material is indirectly heated by using a heating wire that generates heat by energization separately from the conductor material. It can also be evaporated.
すなわち、通電により発熱する発熱線の外周に導体材
料源となる導体材料層が被覆形成された導体材料被覆発
熱線をスルーホール用孔に貫挿配置し、真空雰囲気下に
おいて、前記発熱線に通電することによって導体材料層
を蒸発させることができる。That is, a conductor material-coated heat generating wire in which a conductor material layer serving as a conductor material source is coated on the outer periphery of a heat generating wire that generates heat when energized is inserted into a through hole hole, and the heat generating wire is energized in a vacuum atmosphere. By doing so, the conductor material layer can be evaporated.
発熱線には、タングステン線等、通電により効率的に
発熱するが、導体材料源のように蒸発してしまうことは
ない線材を用いる。この発熱線の外周に、前記したよう
な導体材料を一定の厚みで被覆して導体材料層を形成
し、導体材料被覆発熱線とする。導体材料被覆発熱線の
両端には、電流を供給するための通常の配線用導線が接
続されて、発熱線に通電できるようにしておく。発熱線
を覆う導体材料層の厚みは、導体材料被覆発熱線の外形
がスルーホール用孔に貫挿できる太さ以下になるととも
に、前記した(3)式で求められる導体材料細線の線径
に相当する程度の量の導体材料が供給できるように設定
しておく。For the heating wire, a wire such as a tungsten wire that efficiently generates heat when energized but does not evaporate like a conductive material source is used. The conductor material as described above is coated on the outer periphery of the heating wire to a constant thickness to form a conductor material layer, thereby forming a conductor material-coated heating wire. An ordinary wiring lead wire for supplying a current is connected to both ends of the conductor material-covered heating wire so that the heating wire can be energized. The thickness of the conductor material layer that covers the heating wire is equal to or smaller than the thickness of the conductor material-covered heating wire that can be inserted into the through-hole, and is equal to the diameter of the thin conductor material wire that is obtained by the above equation (3). It should be set so that a corresponding amount of conductive material can be supplied.
導体材料被覆発熱線のスルーホール用孔への配置方法
や、真空雰囲気の設定方法、通電方法等は、前記した導
体材料細線を用いる場合と同様でよい。The method of arranging the conductor-material-covered heating wire in the through-hole, the method of setting the vacuum atmosphere, the method of energizing, etc. may be the same as in the case of using the conductor-material thin wire described above.
この方法では、スルーホール用孔に導体膜が形成され
た後も、スルーホール用孔には発熱線が残っているの
で、処理後に発熱線を基板から取り外す必要がある。In this method, since the heating wire remains in the through hole even after the conductor film is formed in the through hole, it is necessary to remove the heating wire from the substrate after the processing.
以上に説明したこの発明にかかるスルーホール形成方
法では、基板に形成する導体膜のうち、スルーホール用
孔内面の導体膜のみが形成されるので、基板の表面の導
体膜については、従来の通常の薄膜形成手段による導体
膜の形成方法を適用すればよい。スルーホール用孔内面
の導体膜形成工程と、基板表面の導体膜形成工程は、ど
らちを先に行ってもよい。また、処理雰囲気等の処理条
件を合わせることができれば、基板表面から離れた位置
に配置した導体材料ターゲットによる基板表面への均一
な導体膜の形成と、個々のスルーホール用孔に近接して
配置された導体材料源によるスルーホール用孔内面への
導体膜形成を、同時に行うことも可能である。In the through hole forming method according to the present invention described above, among the conductor films formed on the substrate, only the conductor film on the inner surface of the through hole hole is formed. The method of forming a conductor film by the thin film forming means may be applied. Either of the conductor film forming step on the inner surface of the through hole and the conductor film forming step on the substrate surface may be performed first. In addition, if the processing conditions such as the processing atmosphere can be matched, the formation of a uniform conductor film on the substrate surface by the conductor material target arranged at a position distant from the substrate surface and the placement of the conductor film close to each through hole hole It is also possible to simultaneously perform the formation of the conductor film on the inner surface of the through-hole hole by the above-mentioned conductor material source.
基板の1枚毎に、導体材料源の配置および通電を行っ
てスルーホール用孔に導体膜を形成させてもよいが、ス
ルーホール用孔の位置が同じであれば、複数枚の基板を
重ねたままで、各スルーホール用孔の内部または基板の
両側に導体材料源を配置して、複数枚の基板で連通した
スルーホール用孔に同時に導体膜を形成させることもで
きる。A conductive material source may be arranged and a current may be applied to each of the substrates to form a conductive film in the through-hole holes. However, if the through-hole holes are in the same position, a plurality of substrates are stacked. It is also possible to dispose a conductor material source inside each through hole hole or on both sides of the substrate as it is, and simultaneously form a conductor film in the through hole hole that is communicated with a plurality of substrates.
基板に設けられた個々のスルーホール用孔に近接して
導体材料源を配置し、この導体材料源を蒸発させてスル
ーホール用孔の内面に被着させると、個々のスルーホー
ル用孔の内面に必要な量の導体材料が確実に供給され、
スルーホール用孔の内面に十分な厚みの導体膜が形成で
きる。When the conductor material source is arranged close to each through hole hole provided on the substrate, and the conductor material source is evaporated and deposited on the inner surface of the through hole hole, the inner surface of each through hole hole is formed. Ensures that the required amount of conductive material is supplied,
A conductor film having a sufficient thickness can be formed on the inner surface of the through hole.
すなわち、配線回路板に対する従来の導体膜形成方法
では、基板全体に平均して導体膜を形成させるために、
導体材料源(ターゲット)を基板から一定の距離だけ離
した状態で処理を行っていたので、基板表面には均一な
厚みの導体膜が形成されるが、狭いスルーホール用孔の
内面には十分な厚みの導体膜が形成されず、特にスルー
ホール用孔の奥まで導体膜を形成することができなかっ
た。That is, in the conventional method for forming a conductor film on a printed circuit board, in order to form a conductor film on the entire substrate on average,
Since the processing was performed with the conductor material source (target) separated from the substrate by a certain distance, a conductor film with a uniform thickness is formed on the substrate surface, but the inner surface of the narrow through-hole hole is sufficiently large. A conductor film having a uniform thickness was not formed, and in particular, the conductor film could not be formed deep in the through hole hole.
これに対し、この発明のように、個々のスルーホール
用孔に近接して導体材料源を配置しておけば、狭く深い
スルーホール用孔に対しても、内面全体に十分な量の導
体材料を供給することができ、スルーホール用孔の内面
全体に均一で十分な厚みの導体膜を形成できるのであ
る。On the other hand, if the conductor material sources are arranged close to the individual through-hole holes as in the present invention, a sufficient amount of conductor material can be applied to the entire inner surface even for narrow and deep through-hole holes. It is possible to form a conductive film having a uniform and sufficient thickness on the entire inner surface of the through-hole.
さらに、スルーホール用孔を挟んで基板の両側に配置
された導電材料からなる一対の放電電極に電圧を印加し
放電させることによって導体材料を蒸発させるようにす
れば、スルーホール用孔を貫通する放電が起こるので、
放電によって蒸発させられた導体材料が放電経路に沿っ
てスルーホール用孔の内部に確実に供給される。その結
果、スルーホール用孔の内面全体に均一な導体膜が形成
されることになる。導体材料からなる放電電極は、基板
の両側に配置しておくだけで、個々のスルーホール用孔
の内部には何も設けておかなくてよいので、処理作業が
簡単かつ能率的に行える。また、このことにより、放電
電極と基板とを相対的に移動させながら、多数のスルー
ホール用孔に連続的に導体膜を形成することもでき、処
理の自動化あるいは連続工程化も可能である。Further, if the conductor material is vaporized by applying a voltage to a pair of discharge electrodes made of a conductive material disposed on both sides of the substrate with the through hole hole interposed, the through hole hole is penetrated. Because a discharge will occur,
The conductive material evaporated by the discharge is reliably supplied to the inside of the through hole hole along the discharge path. As a result, a uniform conductor film is formed on the entire inner surface of the through hole hole. Since the discharge electrodes made of a conductive material are simply arranged on both sides of the substrate and nothing needs to be provided inside each through-hole, the processing operation can be performed easily and efficiently. Further, by this, the conductive film can be continuously formed in a large number of through-holes while moving the discharge electrode and the substrate relatively, and the process can be automated or can be made into a continuous process.
つぎに、スルーホール用孔に貫通配置した導体材料細
線に通電して、導体材料細線自体を発熱させて蒸発させ
れば、スルーホール用孔の内部で導体材料細線から周囲
のスルーホール用孔内面に確実かつ均等に導体材料が供
給されるので、均一な厚みの導体膜を効率良く形成する
ことができる。導体材料細線が蒸発してしまえば、スル
ーホール用孔の内部には何も存在しなくなるので、スル
ーホール用孔に導体膜が形成された基板を直ちに取り出
して、次の工程に移すことができる。Then, by energizing the conductor material thin wire penetratingly arranged in the through hole hole to cause the conductor material thin wire itself to generate heat and evaporate, the conductor material thin wire inside the through hole hole is surrounded by the inner surface of the through hole hole. Since the conductor material is reliably and evenly supplied, the conductor film having a uniform thickness can be efficiently formed. If the thin conductor material wire evaporates, nothing will exist inside the through-hole, so the substrate with the conductor film formed in the through-hole can be immediately taken out and moved to the next step. .
つぎに、導体材料被覆発熱線を用いれば、発熱線の発
熱により導体材料層を効率的に加熱蒸発させることがで
き、容量の小さな電源でも効率的に導体膜を形成させる
ことができ、導体膜の形成能率を高め、作業時間の短縮
化を図ることができる。Next, by using the conductor material-coated heating wire, the conductor material layer can be efficiently heated and evaporated by the heat generated by the heating wire, and the conductor film can be efficiently formed even with a power source having a small capacity. It is possible to improve the forming efficiency of the, and shorten the working time.
ついで、この発明の実施例について、図面を参照しな
がら、以下に詳しく説明する。Next, embodiments of the present invention will be described in detail below with reference to the drawings.
第1図〜第4図は、導体材料源を放電によって蒸発さ
せる方法を示している。1 to 4 show a method of evaporating a conductive material source by electric discharge.
まず、第1図に基本的な構成およびその動作原理を示
している。First, FIG. 1 shows a basic configuration and its operating principle.
セラミック等からなる基板10には、所定内径のスルー
ホール用孔12が貫通形成されている。このスルーホール
用孔付基板を、内部空間の雰囲気を制御できる処理室20
に収容する。処理室20は、図示しないが、真空排気口を
経て真空ポンブが接続されており、Arガス等の供給口に
はガス供給源が接続されている。具体的な処理室20の構
造は、通常の薄膜形成手段に用いる処理室と同様のもの
である。A through hole 12 having a predetermined inner diameter is formed through a substrate 10 made of ceramic or the like. This through hole substrate is used as a processing chamber 20 where the atmosphere of the internal space can be controlled.
Housed in Although not shown, the processing chamber 20 is connected to a vacuum pump via a vacuum exhaust port, and a gas supply source is connected to a supply port for Ar gas or the like. The specific structure of the processing chamber 20 is the same as the processing chamber used in a normal thin film forming means.
基板10の両側には、スルーホール用孔12を挟んで、Cu
等の導体材料からなる一対の放電電極30,30が配置され
る。放電電極30,30は対向する先端を鋭角に尖らせてあ
り、この先端から放電が起こり易くなっている。放電電
極30,30の先端は、基板10の両面から1mm以内に近接して
配置されており、先端同士を結ぶ線が、スルーホール用
孔12の中心軸と一致するように配置されている。放電電
極30,30には配線42を経て直流電源40が接続されてい
る。電源は、通常直流電源が用いられるが、その他高周
波電源等を使用することもできる。以下の各実施別にお
いても直流電源のみに限定されるものではない。On both sides of the substrate 10, insert a through hole 12
A pair of discharge electrodes 30, 30 made of a conductive material such as The discharge electrodes 30, 30 have sharpened sharp tips at their opposite ends, and discharge easily occurs from these tips. The ends of the discharge electrodes 30, 30 are arranged within 1 mm from both surfaces of the substrate 10 so as to be close to each other, and the line connecting the ends is arranged so as to coincide with the central axis of the through hole hole 12. A DC power supply 40 is connected to the discharge electrodes 30, 30 via a wire 42. As the power source, a direct current power source is usually used, but a high frequency power source or the like can also be used. Also in each of the following embodiments, the invention is not limited to the DC power supply.
処理室20を真空排気して、Arガスを導入することによ
って、処理室20をArガスが存在する減圧雰囲気に保つ。
この状態で、放電電極30,30間に数10V程度の電圧を印加
すると、放電電極30,30間に放電が発生するとともに、
放電電極30,30を構成する導体材料が蒸発し、放電経路
に沿ってスルーホール用孔12の内部に導体材料が供給さ
れ、スルーホール用孔12の内面に導体材料が被着されて
導体膜が形成される。The processing chamber 20 is evacuated and Ar gas is introduced to keep the processing chamber 20 in a reduced pressure atmosphere in which Ar gas exists.
In this state, when a voltage of about several tens of volts is applied between the discharge electrodes 30,30, discharge is generated between the discharge electrodes 30,30,
The conductive material forming the discharge electrodes 30, 30 is evaporated, the conductive material is supplied to the inside of the through hole hole 12 along the discharge path, and the conductive material is deposited on the inner surface of the through hole hole 12 to form a conductive film. Is formed.
つぎに、第2図は、多数のスルーホール用孔12が設け
られた基板10にスルーホールを形成する場合を示してい
る。なお、以下の実施例では、処理室20の構成について
は図示を省略している。Next, FIG. 2 shows a case where through holes are formed in the substrate 10 in which a large number of through hole holes 12 are provided. In the following embodiments, the structure of the processing chamber 20 is not shown.
基板10の各スルーホール用孔12の両側に、断面が鋭角
二等辺三角形状をなす一対の放電電極30,30が設けられ
ており、各放電電極30,30に接続された配線42は、切り
換えスイッチ43を経て直流電源40に接続されている。切
り換えスイッチ43を切り換えながら、それぞれの放電電
極30,30に順番に電流を流していくと、電流を流した部
分の放電電極30,30間に放電が起こり、放電が起こった
場所のスルーホール用孔12の内面に導体膜32が形成され
る。この実施例では、直流電源40は、1個所の放電電極
30,30に放電を起こさせるだけの容量があればよいの
で、比較的小容量の電源で処理することができる。A pair of discharge electrodes 30, 30 having a cross section of an acute-angled isosceles triangle is provided on both sides of each through-hole 12 of the substrate 10, and the wiring 42 connected to each discharge electrode 30, 30 is switched. It is connected to the DC power supply 40 via the switch 43. When the current is sequentially applied to the respective discharge electrodes 30 and 30 while switching the changeover switch 43, a discharge is generated between the discharge electrodes 30 and 30 in the part where the current is applied, and for the through hole at the place where the discharge occurs. A conductor film 32 is formed on the inner surface of the hole 12. In this embodiment, the DC power supply 40 has one discharge electrode.
Since it is sufficient for 30,30 to have a capacity for causing a discharge, it is possible to process with a relatively small capacity power supply.
第3図に示す実施例は、先端の尖った針状の放電電極
30,30を用いるとともに、各放電電極30,30毎に別の直流
電源40に接続された配線42と断接スイッチ44を備えてい
る。このように、個々の放電電極30,30毎に別の電源を
用いれば、個々の電源容量は小さくて済む。また、各断
接スイッチ44を同時に接続すれば、複数組の放電電極3
0,30に同時に放電を起こさせて、各スルーホール用孔12
に一斉に導体膜を形成させることができ、作業能率が良
い。また、各断接スイッチ44を順番に接続していって、
各スルーホール用孔12に順番に導体膜を形成させるよう
にすることもできる。The embodiment shown in FIG. 3 is a needle-shaped discharge electrode with a sharp tip.
30 and 30 are used, and each discharge electrode 30, 30 is provided with a wiring 42 and a connection / disconnection switch 44 connected to another DC power source 40. In this way, if a separate power source is used for each of the discharge electrodes 30, 30, each power source capacity can be small. Also, if each disconnection switch 44 is connected at the same time, multiple sets of discharge electrodes 3
Discharge at 0 and 30 at the same time, and each through hole hole 12
Conductive films can be formed all at once, and work efficiency is good. In addition, connecting each disconnection switch 44 in order,
It is also possible to sequentially form a conductor film in each through hole hole 12.
第4図に示す実施例では、放電電極30,30の対向面
が、多数の尖った先端すなわち尖端部を密接配置して、
いわゆる鋸歯状に形成されている。このような放電電極
30,30に電流を流すと、個々の対向する尖端部34,34同士
のうち、最も放電経路が短くて済む個所で放電が起こる
ことになる。そこで、放電電極30,30間の基板10を、放
電電極30,30の対向面と平行に移動させると、基板10の
うち何れかのスルーホール用孔12の中心軸が、放電電極
30,30の何れかの尖端部34,34を結ぶ線に一致した段階
で、その部分の尖端部34,34に放電が起こってスルーホ
ール用孔12に導体膜が形成される。尖端部34,34の位置
からスルーホール用孔12が移動してしまえば、この部分
における放電は終了して、他の部分で新たな放電が始ま
る。このようにして、基板10全体のスルーホール用孔12
に対して、順次放電による導体膜の形成が行われる。In the embodiment shown in FIG. 4, the facing surfaces of the discharge electrodes 30, 30 have a large number of sharp tips, that is, sharp tips, closely arranged,
It is formed in a so-called sawtooth shape. Such a discharge electrode
When an electric current is applied to 30,30, a discharge will occur at a position where the discharge path is the shortest among the respective facing tips 34,34. Therefore, when the substrate 10 between the discharge electrodes 30 and 30 is moved in parallel with the facing surface of the discharge electrodes 30 and 30, the central axis of any of the through-holes 12 of the substrate 10 becomes the discharge electrode.
At the stage where it coincides with the line connecting any of the tip portions 34, 34 of 30, 30, electric discharge occurs at the tip portions 34, 34 of that portion, and a conductor film is formed in the through hole hole 12. When the through-hole 12 is moved from the positions of the tip portions 34, 34, the discharge in this portion ends and a new discharge starts in another portion. In this way, the through-hole holes 12 of the entire substrate 10 are
On the other hand, the conductor film is sequentially formed by the discharge.
上記実施例では、スルーホール用孔12の位置に合わせ
て放電電極30,30を配置しておく必要がなく、また、ス
ルーホール用孔12毎に切り換えスイッチを切り換える必
要もなくなり、簡単かつ確実に全てのスルーホール用孔
12に対する導体膜の形成が行える。したがって、基板10
の構造やスルーホール用孔12の設計が変更されても、放
電電極30,30等の構造は共通のままで使用することが可
能になる。なお、前記説明では、放電電極30,30を固定
して、基板10側を移動させたが、逆に、基板10を固定し
て放電電極30,30側を移動させても同様の機能が果たせ
る。In the above embodiment, it is not necessary to arrange the discharge electrodes 30, 30 in accordance with the positions of the through-holes 12, and it is not necessary to switch the changeover switch for each through-hole 12, so that it is simple and reliable. All through hole holes
A conductor film can be formed for 12. Therefore, the substrate 10
Even if the structure and the design of the through hole 12 are changed, the discharge electrodes 30, 30 and the like can be used with the same structure. In the above description, the discharge electrodes 30, 30 are fixed and the substrate 10 side is moved, but conversely, the same function can be achieved by fixing the substrate 10 and moving the discharge electrodes 30, 30 side. .
つぎに、この発明には含まれない参考例について説明
する。第5図〜第8図は、導体材料細線を用いる方法を
示しており、まず、第5図に基本的な構成およびその動
作原理を示している。なお、前記実施例と共通する部分
については、同じ符号を付けるとともに重複する説明は
省略する。Next, reference examples not included in the present invention will be described. FIGS. 5 to 8 show a method of using a thin conductor material wire. First, FIG. 5 shows a basic configuration and its operating principle. The same parts as those in the above-described embodiment are designated by the same reference numerals, and duplicated description will be omitted.
処理室20の内部で、基板10のスルーホール用孔12の内
部を貫挿して、導体材料細線50が配置されており、導体
材料細線50の両端は基板10の両側外部で、直流電源40に
つながる配線42に接続されている。導体材料細線50は、
スルーホール用孔12の中心位置に配置しておくと、スル
ーホール用孔12の全内周に均一な導体膜が形成できる。
導体材料細線50の両端に接続された配線42,42を適当な
手段(図示せず)で支持しておくことによって、導体材
料細線50を所定位置に維持しておくことが好ましい。Inside the processing chamber 20, the conductor material thin wire 50 is arranged by penetrating the inside of the through hole 12 of the substrate 10, and both ends of the conductor material thin wire 50 are outside both sides of the substrate 10 and are connected to the DC power supply 40. It is connected to the connecting wire 42. The conductor material thin wire 50 is
If it is arranged at the center position of the through hole hole 12, a uniform conductor film can be formed on the entire inner circumference of the through hole hole 12.
It is preferable to maintain the conductor material thin wire 50 at a predetermined position by supporting the wires 42, 42 connected to both ends of the conductor material thin wire 50 by an appropriate means (not shown).
処理室20を真空雰囲気にした後、導体材料細線50に大
きな電流を流すと、導体材料細線50自身が発熱して蒸発
することになる。蒸発した導体材料は、回りを囲むスル
ーホール用孔12の内面に被着するので、スルーホール用
孔12の内面に導体膜が形成される。導体材料が蒸発すれ
ば、導体材料細線50は消滅するので、スールーホール用
孔12の内部には何も残らない。したがって、上記処理工
程が終了し、スルーホール用孔12に導体膜が形成された
基板10は、直ちに取り出して次の工程に移動させること
ができる。When a large current is passed through the conductor material thin wire 50 after the processing chamber 20 is placed in a vacuum atmosphere, the conductor material thin wire 50 itself generates heat and evaporates. Since the evaporated conductor material adheres to the inner surfaces of the surrounding through-holes 12, the conductor film is formed on the inner surfaces of the through-holes 12. If the conductor material evaporates, the conductor material thin wire 50 disappears, so that nothing remains inside the sulu hole 12. Therefore, the substrate 10 on which the conductor film is formed in the through-hole 12 after the above-mentioned processing steps are completed can be immediately taken out and moved to the next step.
第6図に示すように、基板10に多数のスルーホール用
孔12が設けられている場合は、各スルーホール用孔12毎
に導体材料細線50を貫挿配置し、各導体材料細線50につ
ながる配線42と電源40の間に切り換えスイッチ43を設け
ておけば、前記第2図の実施例と同様に、各スルーホー
ル用孔12の導体材料細線50に順番に通電して導体膜を形
成させることができる。なお、第6図〜第8図に示す実
施例では、処理室20の構成については図示を省略してい
る。As shown in FIG. 6, when a large number of through-holes 12 are provided in the substrate 10, a conductor material thin wire 50 is inserted through each of the through-hole holes 12, and the conductor material thin wires 50 are inserted into the through-holes 12. If a changeover switch 43 is provided between the connecting wire 42 and the power source 40, the conductor material thin wire 50 of each through hole hole 12 is sequentially energized to form a conductor film, as in the embodiment of FIG. Can be made. In the embodiment shown in FIGS. 6 to 8, the structure of the processing chamber 20 is not shown.
第7図に示すように、複数のスルーホール用孔12に貫
挿配置した全ての導体材料細線50を、配線42でひとつの
電源40に接続しておき、1個所の断接スイッチ44で全て
の導体材料細線50に通電すれば、全てのスルーホール用
孔12に一斉に導体膜を形成することができる。As shown in FIG. 7, all the fine conductor material wires 50 inserted and arranged in the plurality of through-holes 12 are connected to one power source 40 by the wiring 42, and all are connected by the disconnection switch 44 at one place. By energizing the conductor material thin wire 50, the conductor film can be formed all at once in the through-hole holes 12.
第8図に示す実施例では、スルーホール用孔12に貫挿
配置した導体材料細線50の下端を、支持電極54に固定
し、この支持電極54から配線42を経て直流電源40に接続
している。導体材料細線50の上端は、基板10の上方に突
出した状態で開放されている。基板10の上方には先端が
尖った接極子52が基板10と平行な方向に移動自在に設け
られている。接極子52は、配線42を経て前記直流電源40
に接続されている。In the embodiment shown in FIG. 8, the lower end of the fine conductor material wire 50 inserted through the through hole 12 is fixed to the supporting electrode 54, and the supporting electrode 54 is connected to the DC power source 40 via the wiring 42. There is. The upper end of the thin conductor material wire 50 is opened in a state of protruding above the substrate 10. An armature 52 having a sharp tip is provided above the substrate 10 so as to be movable in a direction parallel to the substrate 10. The armature 52 is connected to the DC power source 40 via the wiring 42.
It is connected to the.
このような状態で、第8図の上図から下図に示すよう
に、接極子52を水平方向に移動させると、接極子52が導
体材料細線50の上端に接触した時点で、その部分の導体
材料細線50に電流が流れ、導体材料細線50が発熱蒸発し
て、スルーホール用孔12の内面に導体膜32が形成され
る。接極子52が移動するにつれて、つぎつぎと別の導体
材料細線50に接触することにより、各導体材料線50に順
番に電流を供給して発熱蒸発させ、スルーホール用孔12
に導体膜を形成することができる。すなわち、接極子52
を基板10に沿って走査することにより、各導体材料細線
50に順番に電流を供給してスルーホール用孔12に導体膜
32を形成できるのである。In this state, when the armature 52 is moved in the horizontal direction as shown in the upper diagram to the lower diagram of FIG. 8, when the armature 52 comes into contact with the upper end of the conductor material thin wire 50, the conductor of that portion is contacted. An electric current flows through the thin material wire 50, and the thin conductive material wire 50 heats and evaporates, so that the conductor film 32 is formed on the inner surface of the through hole hole 12. As the armature 52 moves, it contacts another conductor material thin wire 50 one after another, thereby sequentially supplying an electric current to each conductor material wire 50 to cause heat generation and evaporation, and the through hole 12
A conductor film can be formed on the substrate. That is, armature 52
Scanning along the substrate 10
The electric current is sequentially supplied to 50 and the conductor film is formed in the through hole hole 12.
32 can be formed.
上記実施例では、切り換えスイッチを操作することな
く、接極子52を移動走査させるだけで自動的に電流の供
給を切り換えることができる。In the above-described embodiment, the current supply can be automatically switched by simply moving and scanning the armature 52 without operating the changeover switch.
つぎに、第9図〜第11図には、導体材料被覆発熱線を
用いる方法を示している。Next, FIGS. 9 to 11 show a method using a conductor material-coated heating wire.
まず、第9図に基本的な構成およびその動作原理を示
している。なお、前記実施例と共通する部分について
は、同じ符号を付けるとともに重複する説明は省略す
る。First, FIG. 9 shows a basic configuration and its operating principle. The same parts as those in the above-described embodiment are designated by the same reference numerals, and duplicated description will be omitted.
前記方法では、スルーホール用孔12に導体材料細線50
を貫挿配置したが、この方法では、スルーホール用孔12
に導体材料被覆発熱線60を配置しておく。導体材料被覆
発熱線60は、タングステン線等からなる発熱線62を中心
にして、その外周に前記同様の導体材料からなる被覆層
64を形成したものである。発熱線62の両端は被覆された
導体材料層64から露出していて、直流電源40につながる
配線42に接続されている。処理室20内に真空雰囲気にし
た状態で、発熱線62に電流を流すと、発熱線62が発熱し
て導体材料層64を加熱蒸発させる。発熱した導体材料は
回りを囲むスルーホール用孔12内縁に被着して導体膜を
形成する。導体材料が蒸発すれば、導体材料層64は消滅
するが、発熱線62は残っているので、発熱線62への通電
を遮断して、発熱線62をスルーホール用孔12から撤去す
る。In the above method, the conductor material fine wire 50 is provided in the through hole hole 12.
However, in this method, the through-hole holes 12
The conductor-material-covered heating wire 60 is arranged in advance. The conductor material coated heating wire 60 has a coating layer made of the same conductor material as described above around the heating wire 62 made of a tungsten wire or the like.
64 is formed. Both ends of the heating wire 62 are exposed from the covered conductive material layer 64 and are connected to the wiring 42 connected to the DC power supply 40. When a current is applied to the heating wire 62 in a vacuum atmosphere in the processing chamber 20, the heating wire 62 generates heat to heat and evaporate the conductor material layer 64. The conductive material that has generated heat is deposited on the inner edge of the surrounding through-hole hole 12 to form a conductive film. When the conductor material evaporates, the conductor material layer 64 disappears, but the heating wire 62 remains, so the power supply to the heating wire 62 is cut off and the heating wire 62 is removed from the through hole hole 12.
第10図は、多数のスルーホール用孔12を備えた基板10
にスルーホールを形成する場合であり、各スルーホール
用孔12に貫挿配置された導体材料被覆発熱線60を、配線
42を経て1個所の直流電源40に接続しておき、断接スイ
ッチ44で一斉に通電できるようにしている。また、第11
図の示す実施例では、各導体材料被覆発熱線60の配線42
を切り換えスイッチ43を経て電源40に接続しており、切
り換えスイッチ43の操作で、多数の導体材料被覆発熱線
60に順番に通電して、スルーホール用孔12に順番に導体
膜66を形成するようになっている。直流電源40の容量に
余裕があれば、第10図に示す実施例のように一斉に通電
する方法が作業能率が高い。また、第11図に示す実施例
では、小容量の直流電源40でも実施可能である。FIG. 10 shows a substrate 10 having a large number of through hole holes 12.
In the case of forming a through hole in the through hole, the conductor material covered heating wire 60 inserted through each through hole hole 12 is
It is connected to the DC power source 40 at one place via 42, and the connection / disconnection switch 44 enables simultaneous energization. Also, the eleventh
In the illustrated embodiment, the wiring 42 of each conductor material coated heating wire 60 is
Is connected to the power source 40 via the changeover switch 43, and by operating the changeover switch 43, a large number of conductor material coated heating wires are connected.
The conductive film 66 is sequentially formed in the through-holes 12 by sequentially energizing 60. If the capacity of the DC power supply 40 has a margin, the method of energizing all at once as in the embodiment shown in FIG. 10 has high work efficiency. Further, in the embodiment shown in FIG. 11, it is also possible to use a small capacity DC power supply 40.
以上に述べた、この発明にかかる配線回路板のスルー
ホール形式方法によれば、基板に設けられた個々のスル
ーホール用孔に近接して導体材料源を配置し、この導体
材料源を放電により加熱して蒸発させてスルーホール用
孔の内面に被着させることにより、スルーホール用孔に
十分な厚みの導体膜を確実に形成させることができる。
また、スルーホールの用孔の入口側と奥側で厚みの違い
が生じることも無くなり、均一な厚みの導体膜が形成で
きる。According to the through-hole method for a printed circuit board according to the present invention described above, the conductor material source is arranged in the vicinity of each through-hole hole provided on the substrate, and the conductor material source is discharged. By heating and evaporating and depositing on the inner surface of the through-hole, it is possible to reliably form a conductor film having a sufficient thickness in the through-hole.
Further, there is no difference in thickness between the entrance side and the back side of the through hole hole, and a conductor film having a uniform thickness can be formed.
その結果、従来の薄膜形成手段によるスルーホール形
成方法では、どうしても作製できなかった、均一かつ十
分な厚みの導体膜を備えたスルーホールを形成すること
が可能になり、抵抗が少なく導通不良を起こす心配もな
い極めて品質性能に優れたスルーホールを備えた配線回
路板を提供できるようになる。なお、この発明にかかる
方法は、従来の真空蒸着法やスパッタリング法その他の
いわゆる薄膜形成手段と同様の原理に基づく導体膜の形
成方法であるから、従来のメッキ法等に比べて、緻密で
密着強度が高く電気特性に優れている等の薄膜形成手段
による導体膜の利点を備えていることは言うまでもな
い。As a result, it becomes possible to form a through hole provided with a conductor film having a uniform and sufficient thickness, which cannot be produced by the conventional method of forming a through hole by a thin film forming means, which causes less resistance and causes conduction failure. It is possible to provide a wiring circuit board with a through hole that is extremely excellent in quality performance without worry. Since the method according to the present invention is a method of forming a conductor film based on the same principle as a conventional vacuum vapor deposition method, sputtering method or other so-called thin film forming means, it is denser and more closely adhered than a conventional plating method or the like. It goes without saying that the conductor film has the advantages of the thin film forming means such as high strength and excellent electric characteristics.
特に、前記したように放電電極を利用して導体材料を
蒸発させることにより、スルーホール用孔の内部には何
も設けておかなくてもよくなり、処理作業が簡単かつ効
率的に行えるようになる。多数のスルーホール用孔に連
続的に導体膜を形成することもでき、処理の自動化ある
いは連続工程化に適した方法となる。In particular, by evaporating the conductive material using the discharge electrode as described above, it is not necessary to provide anything inside the through hole hole, and the processing work can be performed easily and efficiently. Become. It is also possible to continuously form a conductor film in a large number of through-holes, which is a method suitable for automation of processing or continuous processing.
第1図はこの発明のうち放電電極を用いる方法の実施例
を示す概略構成図、第2図は全体構造図、第3図および
第4図はそれぞれ別の実施例を示す全体構造図、第5図
は導体材料細線を用いる方法の実施例を示す概略構成
図、第6図は全体構造図、第7図および第8図はそれぞ
れ別の実施例を示す全体構造図、第9図は導体材料被覆
発熱線を用いる方法を示す概略構成図、第10図および第
11図はそれぞれ別の実施例を示す全体構造図、第12図は
従来例を示す概略構造図、第13図は導体膜の厚さを示す
拡大断面図、第14図は実際に形成される導体膜の状態を
示す拡大断面図である。 10……基板、12……スルーホール用孔、20……処理室、
30……放電電極、40……直流電源、42……配線、50……
導体材料細線、60……導体材料被覆発熱線、62……発熱
線、64……導体材料層FIG. 1 is a schematic configuration diagram showing an embodiment of a method of using a discharge electrode in the present invention, FIG. 2 is an overall structure diagram, and FIGS. 3 and 4 are overall structure diagrams showing different embodiments, respectively. FIG. 5 is a schematic configuration diagram showing an embodiment of a method using a fine conductor material wire, FIG. 6 is an overall structure diagram, FIGS. 7 and 8 are overall structure diagrams showing different embodiments, and FIG. 9 is a conductor. Schematic configuration diagram showing the method of using the material coated heating wire, FIG. 10 and
11 is an overall structural view showing another embodiment, FIG. 12 is a schematic structural view showing a conventional example, FIG. 13 is an enlarged sectional view showing the thickness of a conductor film, and FIG. 14 is actually formed. It is an expanded sectional view showing a state of a conductor film. 10 …… Substrate, 12 …… Through hole, 20 …… Processing chamber,
30 ... Discharge electrode, 40 ... DC power supply, 42 ... Wiring, 50 ...
Conductor material thin wire, 60 ... Conductor material coated heating wire, 62 ... Heating wire, 64 ... Conductor material layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 宮野 孝広 大阪府門真市大字門真1048番地 松下電 工株式会社内 (72)発明者 北村 啓明 大阪府門真市大字門真1048番地 松下電 工株式会社内 (56)参考文献 特開 昭62−214170(JP,A) 特開 昭58−55563(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takahiro Miyano 1048 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works Co., Ltd. (72) Hiroaki Kitamura 1048, Kadoma, Kadoma City, Osaka Matsushita Electric Works Co., Ltd. 56) References JP-A-62-214170 (JP, A) JP-A-58-55563 (JP, A)
Claims (1)
に近接して導体材料源を配置し、この導体材料源を蒸発
させてスルーホール用孔の内面に被着させる配線回路板
のスルーホール形成方法であって、前記導体材料源とし
て、導体材料からなる一対の放電電極をスルーホール用
孔を挟んで基板の両側に配置し、減圧雰囲気下におい
て、前記一対の放電電極間に電圧を印加し放電させるこ
とによって導体材料からなる放電電極を蒸発させる配線
回路板のスルーホール形成方法。1. A through hole of a wiring circuit board in which a conductor material source is arranged in the vicinity of each through hole hole provided in a substrate, and the conductor material source is evaporated to adhere to the inner surface of the through hole hole. A method of forming a hole, wherein, as the conductor material source, a pair of discharge electrodes made of a conductor material are arranged on both sides of a substrate with a hole for a through hole interposed therebetween, and a voltage is applied between the pair of discharge electrodes under a reduced pressure atmosphere. A method of forming a through hole in a printed circuit board, wherein a discharge electrode made of a conductive material is evaporated by applying and discharging.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2193249A JP2675657B2 (en) | 1990-07-20 | 1990-07-20 | Method for forming through holes in printed circuit boards |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2193249A JP2675657B2 (en) | 1990-07-20 | 1990-07-20 | Method for forming through holes in printed circuit boards |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04174594A JPH04174594A (en) | 1992-06-22 |
JP2675657B2 true JP2675657B2 (en) | 1997-11-12 |
Family
ID=16304815
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2193249A Expired - Fee Related JP2675657B2 (en) | 1990-07-20 | 1990-07-20 | Method for forming through holes in printed circuit boards |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2675657B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7519194B2 (en) | 2004-07-21 | 2009-04-14 | Siemens Audiologische Technik Gmbh | Hearing aid system and operating method therefor in the audio reception mode |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5855563A (en) * | 1981-09-28 | 1983-04-01 | Ricoh Co Ltd | Method for vapor deposition |
JPS62214170A (en) * | 1986-03-17 | 1987-09-19 | Yaskawa Electric Mfg Co Ltd | Surface-treatment of inner wall of small hole |
-
1990
- 1990-07-20 JP JP2193249A patent/JP2675657B2/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7519194B2 (en) | 2004-07-21 | 2009-04-14 | Siemens Audiologische Technik Gmbh | Hearing aid system and operating method therefor in the audio reception mode |
Also Published As
Publication number | Publication date |
---|---|
JPH04174594A (en) | 1992-06-22 |
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