JP2007154225A - Processing method, processing apparatus, and electronic device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus capable of directly performing the patterning in an arbitrary shape on a very small area, and an electronic device manufactured thereby. <P>SOLUTION: In the processing method, a substrate provided opposite to the first ejection hole is processed by introducing inert gas from a second ejection hole formed in an outer circumference of a first ejection hole while feeding reactive gas and a vapor deposition substance to the first ejection hole, and applying the high frequency power to an electrode provided on the outer circumference of the first ejection hole. The vapor deposition substance is ejected on the substrate, and a part thereof is subjected to the ashing with the reactive gas. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention relates to a vapor deposition method and a vapor deposition head, and more particularly, to a processing method and apparatus for depositing an organic substance, an inorganic substance, or a mixed material of an organic substance and an inorganic substance in a minute region, and an electronic device.

  In recent years, regarding organic substances used in organic EL and organic semiconductors, high-molecular materials are formed by an inkjet method, and low-molecular materials are mainly formed by vapor deposition techniques. A material using a polymer is particularly formed by an ink jet method. The ink jet system is a system that applies as many as necessary, and has recently attracted attention as a low-cost manufacturing technology because of its very high material efficiency.

  In Patent Document 1, a liquid resist ink is ejected from a nozzle to form an electronic circuit latent image, and an electronic circuit board in which the mask manufacturing process is reduced is manufactured. Moreover, in patent document 2, the semiconductor by a polymer material is formed by apply | coating the solvent which melt | dissolved polymer | macromolecule on the surface which carried out the orientation process, and material efficiency is very high. However, the polymer material is inferior in terms of performance in terms of the electric mobility and the EL element in the case of the EL element, compared with the element formed of the low molecular material in terms of light emission efficiency.

  On the other hand, since materials using low molecular weight materials are formed by vapor deposition in a vacuumed chamber, the accuracy of the film quality is high, especially as materials for organic EL compared to polymer materials. Its performance is excellent.

  In Patent Document 3, ionized organic substances and inorganic substances are alternately deposited to improve the orientation of the organic substances.

  However, when patterning is performed on an object to be processed created using such a method, a resist process is generally used. Since the resist process is suitable for accurately forming a fine pattern, it has played an important role in the manufacture of electronic devices such as semiconductors. However, there is a drawback that the process is complicated.

With respect to such drawbacks, Patent Document 4 uses a device as shown in FIG. 15 to perform a surface treatment on a minute region partially without using a resist mask by performing a plasma treatment only on the minute region. It has been reported that patterning can be performed.
JP 58-50794 A JP 2004-31458 A JP-A-8-176803 JP 2004-281519 A

  However, when a device is formed by vapor-depositing a low molecular weight organic material, the material reaches the target substrate because the material spreads throughout the chamber. Furthermore, even if it reaches the substrate, the vapor deposition region becomes larger than the opening shape of the nozzle, and it is difficult to form an arbitrary shape in the minute region. In addition, if vapor deposition is performed on the entire surface of the substrate and patterning is performed on the substrate by surface processing or photolithography using plasma formation of a minute region, the process becomes complicated and material efficiency is extremely deteriorated.

  On the other hand, the ink-jet method using a high-molecular material can form as many materials as necessary, but when used in its organic EL, etc., its luminescent properties are comparable to those of low-molecular materials. The characteristics are inferior.

  Further, when semiconductors and electronic devices are formed using materials deposited by the prior art, the contact angle of the deposited materials increased as shown in FIG. 12 due to the surface energy of the materials and the substrate. Occasionally, holes are formed and reliability is lowered.

  Therefore, in view of the above-described conventional problems, an object of the present invention is to provide a processing method and a processing apparatus capable of directly patterning a minute region in an arbitrary shape, and an electronic device created by them.

  The processing method of the first invention of the present application is a method of depositing a deposition material from a deposition nozzle as a deposition source onto an opposing substrate, and a part of the deposition material ejected from the deposition nozzle and the deposition material deposited on the substrate. Vapor deposition is performed while ashing.

  In the processing method of the first invention of the present application, the reactive gas is ejected from the vapor deposition nozzle disposed in the center together with the vapor deposition material, and the inert gas is ejected from the second nozzle disposed so as to surround the vapor deposition nozzle on the outer periphery of the vapor deposition nozzle. It is desirable to generate plasma between the second nozzle and the substrate by ejecting a gas mainly composed of and applying a voltage to an electrode provided in the second nozzle.

  Preferably, a third nozzle is provided on the outer periphery of the second nozzle so as to surround the second nozzle, and a gas that is less likely to be discharged than the gas ejected from the second nozzle is ejected from the third nozzle.

  Moreover, it is preferable to perform vapor deposition while controlling the temperature of the vapor deposition nozzle.

  The vapor deposition method according to the second invention of the present application is a method in which a gas mainly composed of an inert gas is ejected from the inner nozzle arranged in the center after being deposited by the vapor deposition method according to the first invention of the present application. Plasma is generated between the inner nozzle and the substrate by ejecting a gas that is harder to discharge than the gas ejected from the inner nozzle from the outer nozzle arranged so as to surround the inner nozzle, and applying a voltage to the electrode provided on the inner nozzle. It is characterized in that a part of the vapor deposition material deposited on the substrate is processed by the generated plasma.

  In the first and second inventions of the present application, it is preferable that the vapor deposition material is an organic material, an inorganic material, or a mixture of an organic material and an inorganic material.

  The processing apparatus according to the third invention of the present application is a vapor deposition nozzle, a second nozzle arranged on the outer periphery of the vapor deposition nozzle, an electrode, a cell for supplying vapor deposition material to the vapor deposition nozzle, a resistance unit for heating the cell, and vapor deposition A gas supply device for a vapor deposition nozzle that supplies a reactive gas to the nozzle, a gas supply device for a second nozzle that supplies a gas mainly composed of an inert gas to the second nozzle, and a power source that supplies a voltage to the electrode. And

  In the third invention of the present application, it is preferable to supply a gas that is less likely to discharge than a gas ejected from the second nozzle to a third nozzle arranged to surround the second nozzle on the outer periphery of the second nozzle. It is desirable to have a third nozzle gas supply device.

  In addition, it is preferable to have a U-shaped second nozzle that does not open rearward in the traveling direction.

  Preferably, the vapor deposition nozzle is provided with a temperature control mechanism for controlling the temperature of the nozzle.

  Preferably, the second nozzle is provided with a gas type switching mechanism.

  Preferably, it is desirable that the vapor deposition nozzle and the third nozzle have a mechanism for exhausting the inside of the nozzle.

  The processing apparatus according to the fourth invention of the present application includes an inner nozzle on the rear side with respect to the traveling direction of the vapor deposition nozzle of the third invention of the present application, an outer nozzle arranged to surround the inner nozzle on the outer periphery of the inner nozzle, and an inner nozzle. A gas supply device for an inner nozzle that supplies a gas mainly composed of an inert gas, a gas supply device for an outer nozzle that supplies a gas that is harder to discharge than a gas ejected from the inner nozzle to the outer nozzle, and a power source that supplies a voltage to the electrode The plasma generating head provided with the above is arranged.

  An electronic device according to a fifth aspect of the present invention is a device that is vapor-deposited and patterned by the vapor deposition method according to the first and second aspects of the present invention and the vapor deposition head according to the third and fourth aspects of the present invention. It is characterized by being concave compared to the part.

  By such a processing method and processing apparatus, it is possible to prevent the vapor deposition material ejected from the vapor deposition nozzle from diffusing, and to remove the vapor deposition material deposited on any part of the substrate. Can be patterned.

  As described above, according to the processing method and the processing apparatus of the present invention, it is possible to directly pattern a minute region in an arbitrary shape by a vapor deposition method using a high-performance low-molecular material. In addition, according to the electronic device of the present invention, it is possible to eliminate a shadowed portion when stacked, and as a result, it is possible to improve reliability.

(Embodiment 1)
Hereinafter, Embodiment 1 of the present invention will be described with reference to FIGS.

  FIG. 1 is a cross-sectional view of a vapor deposition head according to Embodiment 1 of the present invention. The vapor deposition head has a vapor deposition nozzle 1 having a concentric concentric opening having a diameter of 50 μm in the center, and a ceramic first having a concentric concentric opening having a diameter of 300 μm provided around the vapor deposition nozzle 1 on the outer periphery of the vapor deposition nozzle 1. The vapor deposition nozzle 1 has a vapor deposition substance and a gas jet port 4 at a tip portion facing the substrate 3, and a cell 5 is connected to the back side. The cell 5 is provided with a resistance heater 6 and a gas supply port 7 for a vapor deposition nozzle.

  The organic material which is a vapor deposition substance is contained in the cell 5 and is heated by the resistance heater 6. The second nozzle 2 is provided with a second gas ejection port 9 at a tip portion facing the second gas flow path 8 and the substrate 3. The vapor deposition material and the raw material gas of the gas ejected from the gas outlet 4 are supplied into the cell 5 from the gas supply port for vapor deposition nozzle 7 by a gas supply device for vapor deposition nozzle (not shown).

  The source gas of the gas ejected from the second gas ejection port 9 is supplied from the second gas supply port 10 provided in the second nozzle 2 by the second nozzle gas supply device (not shown). 8 leads. An electrode 11 to which high-frequency power is applied is provided in the second nozzle 2, and the electrode 11 is wired to a high-frequency power source 12 and supplied with a high-frequency voltage. The vapor deposition nozzle 1 and the second nozzle 2 have a tapered lowermost portion so that plasma generation and vapor deposition can be performed in a smaller area.

  FIG. 2 shows a plan view of the vapor deposition head according to Embodiment 1 of the present invention as viewed from the vapor deposition material ejection side. A vapor deposition nozzle 1 and a second nozzle 2 are provided, and a second gas outlet 9 is provided between the vapor deposition nozzle 1 and the second nozzle 2.

In the vapor deposition head having such a configuration, the molecules of the organic material evaporated from the cell 5 by the resistance heater 6 reach the vapor deposition nozzle 1 together with oxygen (O ₂ ) supplied from the gas supply port 7 for the vapor deposition nozzle, It is ejected from the vapor deposition material and gas ejection port 4. Further, while supplying helium (He) as an inert gas from the second gas jetting port 9, high frequency power of 13.56 MHz is supplied to the electrode 11 to generate plasma between the second gas jetting port 9 and the substrate. It was.

  By performing vapor deposition under such conditions, the vapor deposition material and the organic material ejected from the gas ejection port 4 are generated between the second gas ejection port 9 and the substrate 3 disposed on the outer periphery thereof, and the vapor deposition material. In addition, the organic material diffused outside the opening of the vapor deposition nozzle 1 is ashed by oxygen simultaneously ejected from the gas ejection port 4. Therefore, the area of the organic material that reaches the substrate is approximately the same as the opening diameter of the vapor deposition material and the gas outlet 4.

  Further, even if the organic material that has reached the substrate spreads on the substrate, it is not spread because it is ashed by plasma. It was found that the vapor deposition material deposited according to the first embodiment was patterned and deposited with high accuracy in a minute region having a diameter of about 50 μm with respect to the opening diameter of the deposition nozzle 1 of 50 μm.

The vapor deposition head according to Embodiment 1 of the present invention can operate from several Pa to several atmospheres, but typically operates at a pressure in the range of about 10 ⁴ Pa to 3 atmospheres. In particular, operation near atmospheric pressure is particularly preferable because it does not require a strict sealing structure or a special exhaust device, and moderately suppresses diffusion of vapor deposition particles, plasma, and active particles.

The high-frequency power supply 12 can supply AC pulses, and can be set to satisfy f _AC > 1 / t _ON when the ON time is t _ON and the AC frequency is f _AC . The voltage ON time is particularly preferably 0.1 to 1 μs. This is because the voltage supply is stopped in a transient state where the plasma spreads by setting the t _ON time to 1 μs or less as compared with the case where a continuous wave AC voltage is supplied, and the plasma generation region can be further reduced. .

  In the present invention, the discharge of helium and oxygen at a pressure close to the atmospheric pressure (helium is much easier to discharge) and the reactivity with the organic material (oxygen contributes greatly to the ashing of the organic substance) Is used to generate plasma only in a minute region in the vicinity of the second gas jet port 9 where helium has a high concentration, and the organic material spreading outward from the opening of the deposition nozzle 1 becomes plasma and It can be said that the patterning vapor deposition was performed with high accuracy with respect to the opening diameter of the vapor deposition nozzle 1 because it was ashed by oxygen.

(Embodiment 2)
The second embodiment of the present invention will be described below with reference to FIGS.

  FIG. 3 is a cross-sectional view of the vapor deposition head according to Embodiment 2 of the present invention. A ceramic third nozzle 13 having concentric and concentric openings is provided on the outer periphery of the second nozzle 2. The third nozzle 13 is provided with a third gas flow path 14 and a third gas ejection port 15. A source gas of gas ejected from the third gas ejection port 15 is supplied from a third gas supply port 16 provided in the third nozzle 13 by a third nozzle gas supply device (not shown). 14 leads to.

  FIG. 4 is a plan view of the vapor deposition head according to Embodiment 2 of the present invention as viewed from the vapor deposition material ejection side. A third nozzle 13 is provided on the outer periphery of the second nozzle 2, and a third gas outlet 15 is provided between the second nozzle 2 and the third nozzle 13.

Under the same conditions as in the first embodiment, vapor deposition was performed while supplying nitrogen (N ₂ ) from the third gas jetting port 15, thereby reducing the patterning interval to 100 μm.

  In the second embodiment, in addition to the first embodiment, nitrogen that is less likely to discharge than helium and has low reactivity is ejected from the third gas ejection port 15 disposed on the outer periphery of the second gas ejection port 9. This prevents the plasma generated between the second gas ejection port 9 and the substrate from spreading outward, and further allows the plasma to be generated only in a minute region, so that the organic material already deposited on the substrate Was not exposed to the plasma, and the patterning interval could be reduced.

(Embodiment 3)
Hereinafter, Embodiment 3 of the present invention will be described with reference to FIG.

  FIG. 5 is a cross-sectional view of the vapor deposition head according to Embodiment 3 of the present invention. A vapor deposition nozzle resistance heater 17 is installed in the vapor deposition nozzle 1. When vapor deposition is performed in the same manner as in the second embodiment, the vapor deposition nozzle resistance heater 17 heats the vapor deposition nozzle 1 from 50 to 200 ° C. so that it re-evaporates immediately even if an organic material is deposited. Thereby, adhesion of the organic material to the vapor deposition nozzle 1 can be reduced, and clogging of the nozzle can be prevented.

(Embodiment 4)
The fourth embodiment of the present invention will be described below with reference to FIG.

  FIG. 6 is a cross-sectional view of the vapor deposition head according to Embodiment 4 of the present invention. A vapor deposition nozzle exhaust port 18 is provided in the vapor deposition nozzle 1, and the vapor deposition nozzle 1 can be exhausted from the vapor deposition nozzle exhaust port 18 by an exhaust mechanism (not shown). An opening / closing mechanism 19 is provided between the vapor deposition nozzle 1 and the cell 5 so that the vapor deposition nozzle 1 and the cell 5 can be shut off. The third nozzle 13 is also provided with an exhaust port 20 so that the third nozzle 13 can be exhausted from the third nozzle exhaust port 20 by an exhaust mechanism (not shown). Further, the second nozzle 2 is provided with a reactive gas supply port 21, and the reactive gas is supplied from the reactive gas supply device (not shown) to the second gas flow path 8 through the reactive gas supply port 21. Led.

  After completion of predetermined vapor deposition in the above-described configuration, a mixed gas of helium and oxygen is supplied from the second nozzle gas supply device and the reactive gas supply device through the second nozzle gas supply port 10 and the reactive gas supply port 21. Then, the gas is supplied to the second gas flow path 8 and ejected from the second gas ejection port 9. At the same time, the vapor deposition nozzle 1 and the cell 5 are shut off by the opening / closing mechanism 18 provided between the vapor deposition nozzle 1 and the cell 5, and the vapor deposition nozzle exhaust port 17 and the third nozzle for the vapor deposition nozzle 1 and the third nozzle 13 are provided. Exhaust is performed from the exhaust port 20 by an exhaust mechanism. Under such conditions, high frequency power of 13.56 MHz is supplied to the electrode 11, and plasma is generated at the second gas outlet 9. The plasma generated in the vicinity of the second gas outlet 9 is partially drawn into the vapor deposition nozzle 1 and the third nozzle 13 because the vapor deposition nozzle 1 and the third nozzle 13 are exhausted.

  Further, since oxygen is mixed with helium, the organic material adhering to the inside of the vapor deposition nozzle 1, the second nozzle 2, and the third nozzle 13 by ashing during vapor deposition and vapor deposition is ashed and exhausted. As described above, with the configuration of the fourth embodiment of the present invention, it is possible to perform maintenance of the nozzles very easily after the completion of predetermined vapor deposition.

(Embodiment 5)
Hereinafter, Embodiment 5 of the present invention will be described with reference to FIGS.

  FIG. 7 is a schematic view of a vapor deposition head according to Embodiment 5 of the present invention. Plasma generating heads 23 and 24 are arranged in parallel behind the direction of travel of the vapor deposition head 22 shown in the first to fourth embodiments. FIG. 8 shows a cross-sectional view of the plasma generation heads 23 and 24 in the fifth embodiment of the present invention.

  Since the plasma generation heads 23 and 24 have the same structure, only the plasma generation head 23 will be described. The inner nozzle 25 includes an outer nozzle 26 having concentric and concentric openings arranged on the outer periphery of the inner nozzle 25 having concentric and concentric openings. The inner nozzle 25 includes an inner gas flow path 27 and an inner gas. A jet port 28 is provided, and the outer nozzle 26 is provided with an outer gas channel 29 and an outer gas jet port 30.

  The raw material gas of the gas ejected from the inner gas outlet 28 is guided from the inner gas supply port 31 to the inner gas flow path 27 by an inner gas supply device (not shown). The source gas of the gas ejected from the outer gas outlet 30 is guided from the outer gas supply port 32 to the outer gas channel 29 by an outer gas supply device (not shown). The electrode 33 to which the high frequency power is applied is disposed on the inner nozzle 25 and wired to the high frequency power source 34. The inner nozzle 25 has a tapered lowermost portion so that a finer region can be plasma-processed.

  In the vapor deposition head in which the plasma generation head A23 and the plasma generation head B24 are arranged in parallel behind the traveling direction of the vapor deposition head 22, the plasma generation head A23 and the plasma generation are performed while performing vapor deposition by the vapor deposition head 22. While supplying helium as an inert gas from the inner gas outlet 28 of the head B24 and oxygen as a reactive gas from the outer gas outlet 30, high frequency power of 13.56 MHz is supplied to the electrode 33, and the inner gas outlet 28 is supplied. And plasma was generated between the substrates. By vapor deposition under such conditions, the vapor deposition patterning could be performed in a line shape having a width of 30 μm.

  When vapor deposition is performed using such three vapor deposition heads, both ends of the vapor deposition material are ashed by the plasma generation head A23 and the plasma generation head B24 after vapor deposition by the vapor deposition head 22, thereby enabling vapor deposition patterning in a finer region. I can say.

  In the embodiment of the present invention described above, the vapor deposition nozzle, the second nozzle, and the third nozzle have been described as concentric and concentric. However, the second nozzle is disposed so as to surround the outer periphery of the vapor deposition nozzle. The shape of each nozzle is not limited to this as long as the third nozzle is arranged so as to surround the outer periphery of the nozzle. In particular, FIG. 9 shows a plan view of a vapor deposition head having a second nozzle 35 having a U-shape that is not open at the rear with respect to the traveling direction, as seen from the vapor deposition material ejection side. By having an opening at the rear of the traveling direction, a U-shaped plasma that is not closed can be created, and patterning can be performed to eliminate plasma damage to the deposited material. it can. Therefore, the present invention is particularly effective when patterning is performed not only in minute dots but also in lines.

  Further, in the present invention, the vapor deposition material evaporated by resistance heating is supplied to the vapor deposition nozzle 1 and ejected from the vapor deposition substance and the gas outlet 4 at the tip of the vapor deposition nozzle 1, but the vapor deposition material is supplied and ejected by this method. The supply and ejection may be performed using an inkjet technique represented by a piezoelectric method using a piezoelectric element, a thermal method that generates bubbles by heat, a dispenser technology, or the like.

  Also, the case where a ceramic nozzle was used as the plasma source was shown, but various plasma sources such as a capillary type such as a parallel plate capillary type and an inductively coupled capillary type, a microgap method, and an inductively coupled tube type are shown. Can be used.

  Moreover, although the case where the plasma was generated using the pulsed high frequency (alternating current) voltage was illustrated, the frequency of the alternating voltage can use high frequency power from several hundred kHz to several GHz. However, the voltage needs to have an ON time of 0.1 to 10 μs. In order to control the ON time to be less than 0.1 μs, there is an inconvenience that the circuit for voltage supply needs a special contrivance so that the waveform does not become dull. Conversely, if the ON time is longer than 10 μs, a minute region However, the plasma cannot be generated in a limited manner. More preferably, the voltage ON time is 0.1 to 1 μs. If the ON time is 1 μs or less, plasma can be generated in a limited range in a particularly small area as compared with the steady state, and exposure of the plasma to the deposited material can be prevented.

  Further, the voltage pulse is a direct current, and positive and negative direct current pulses can be supplied substantially alternately. Even in this case, the voltage needs to be pulsed with an ON time of 0.1 to 10 μs. More preferably, the voltage ON time is 0.1 to 1 μs. Note that DC pulses that are continuously positive or negative may be supplied, but since discharge occurs only at the first pulse whose polarity is reversed due to charging, in this case also, it is substantially positive and negative. It is considered that DC pulses are supplied alternately.

  Further, the OFF time of the pulse voltage is desirably set to be as short as possible to improve the processing speed and more than the time required for the generated plasma to be almost completely extinguished. The time is preferably about 0.5 μs to 100 μs. More preferably, the OFF time of the pulse voltage is preferably 1 μs to 10 μs.

  Moreover, although the case where helium gas was jetted toward the substrate from the second gas jet port and the inner gas jet port was exemplified, the gas jetted from the second gas jet port and the inner gas jet port is mainly composed of an inert gas. It is necessary to be a gas. This is because, in general, a gas mainly composed of an inert gas is more easily converted into plasma under a pressure near atmospheric pressure than other gases.

  Moreover, although the case where oxygen gas was ejected from the vapor deposition material and the gas jet port and the nitrogen gas was jetted from the third gas jet port, the vapor deposition material and the gas jet port or the third gas jet port is connected to the second gas jet port. It is necessary to eject a gas that is less likely to discharge than the gas to be ejected. The method of supplying a pulsed voltage has a property of easily generating a stable glow discharge. Therefore, an easily dischargeable gas such as an inert gas is ejected from the vapor deposition material and the gas outlet or the third gas outlet. If so, there is a disadvantage that the plasma tends to spread over a wide range.

  The inert gas supplied from the second gas outlet is preferably helium, neon, argon, krypton, xenon, or a mixed gas thereof. Helium gas is particularly preferable because it is easy to generate a stable glow discharge near atmospheric pressure. The gas supplied from the vapor deposition material and the gas outlet or the third gas outlet is preferably a gas mainly composed of a gas other than helium, neon, argon, krypton, or xenon, and halogen such as fluorine, chlorine, or bromine. It can be selected according to the processing from the contained etching gas, the deposition gas typified by organic silane such as TEOS, and the gas which is difficult to discharge such as oxygen and nitrogen.

Also, a case has been exemplified where a 13.56MHz of the AC voltage of the continuous, the ON time is t _ON, when the frequency of the alternating current was set to f _AC, suitably to meet f _AC> 1 / t _ON desirable. It is very difficult to form a waveform that does not satisfy f _AC > 1 / t _ON . More preferably, it is desirable to satisfy f _AC > 10 / t _ON . If f _AC is smaller than 10 / t _ON , it is difficult to achieve impedance matching because the sideband is generated far from the center frequency f _AC in the voltage when viewed as pulse-modulated _AC . In order to ensure good impedance matching and suppress reflected power, f _AC is better as it is larger than 1 / t _ON .

  Moreover, in this invention, although the cell 5 and the vapor deposition nozzle 1 are heated with a resistance heater, if the cell 5 and the vapor deposition nozzle 1 can ensure the predetermined temperature, it will not be limited to this.

  In the embodiment, the head is described as a single unit. However, the present invention is not limited to this, and a plurality of heads may be used as shown in FIG.

  Moreover, when vapor-depositing a material, even if a vapor deposition head moves, a board | substrate itself may move.

  Conventionally, as shown in FIG. 11, since it spreads on the substrate with respect to the opening diameter of the nozzle, it is difficult to miniaturize, or when the contact angle becomes large depending on the material and the surface state, the layers are stacked. As shown in FIG. 13, holes were formed and reliability was low. However, in the device manufactured by the above method and apparatus, the vapor deposition material spreading outside the nozzle opening was ashed, and the outer periphery 14 is concave compared to the central part, and as shown in FIG. 14, it can be deposited in the same shape as the nozzle opening in a minute region of 10 to 100 μm and eliminates the shadowed area when laminated. Can be produced, and it has the special effect of being highly reliable.

  In the case of directly forming a pattern in a minute region, the method and apparatus for vapor deposition patterning in the minute region can be applied to a wide range of uses such as an organic semiconductor, an organic EL, and an organic solar cell.

Sectional drawing of the vapor deposition head in Embodiment 1 of this invention The top view which looked at the vapor deposition head in Embodiment 1 of this invention from the ejection side of the vapor deposition substance Sectional drawing of the vapor deposition head in Embodiment 2 of this invention The top view which looked at the vapor deposition head in Embodiment 2 of invention from the ejection side of the vapor deposition substance Sectional drawing of the vapor deposition head in Embodiment 3 of this invention Sectional drawing of the vapor deposition head in Embodiment 4 of this invention. Schematic of the vapor deposition head in Embodiment 5 of this invention Sectional drawing of the plasma generation head in Embodiment 5 of this invention The top view which looked at the vapor deposition head which has the 2nd nozzle 34 which made the U-shaped shape which the back did not open with respect to the advancing direction from the ejection side of the vapor deposition substance. Schematic of a vapor deposition head having a plurality of heads Cross-sectional view of vapor deposition material deposited by conventional example Sectional view when a thin film is formed on top of the vapor deposition material deposited according to the conventional example Sectional drawing of the vapor deposition material vapor-deposited by embodiment of this invention Sectional drawing at the time of forming a thin film on the upper part of the vapor deposition material deposited according to the embodiment of the present invention Sectional view of a conventional plasma generator

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Deposition nozzle 2 2nd nozzle 3 Substrate 4 Deposition substance and gas ejection port 5 Cell 6 Resistance heater 7 Gas supply port for deposition nozzle 8 Second gas flow path 9 Second gas ejection port 10 Second gas supply port 11 Electrode 12 High frequency power supply

Claims (12)

An inert gas is introduced from the second jet port provided on the outer periphery of the first jet port while the reactive gas and the vapor deposition material are supplied to the first jet port, and the outer periphery of the first jet port is introduced. A processing method of processing a substrate provided opposite to the first jet port by applying high-frequency power to a provided electrode, wherein the vapor deposition material is jetted onto the substrate and a part thereof Is a ashing treatment with the reactive gas. A gas that is provided on the outer periphery of the second jet outlet so as to surround the second jet outlet and is less likely to discharge than a gas that is ejected from the second jet outlet from the third jet outlet. The processing method according to claim 1, wherein: The processing method according to claim 1, wherein the processing is performed while controlling the temperature of the first jet port. The processing method according to claim 1, wherein the vapor deposition material is an organic material, an inorganic material, or a mixture of an organic material and an inorganic material. A first jet port, a second jet port provided on an outer periphery of the first jet port, and disposed so as to surround the first jet port; and provided in the first jet port. An electrode, a cell for supplying a vapor deposition material to the first jet port, a resistor for heating the cell, a first gas supply device for supplying a gas to the first jet port, and the second A processing apparatus comprising: a second gas supply device that supplies a gas to a jet port; and a power source that applies a voltage to the electrode. The processing apparatus according to claim 5, wherein a third jet port is provided on an outer periphery of the second jet port so as to surround the second jet port. The processing apparatus according to claim 5, further comprising a U-shaped second nozzle that does not open rearward with respect to the traveling direction. The processing apparatus according to any one of claims 5 to 7, further comprising a temperature control mechanism that controls a temperature of the first jet port at the first jet port. The processing apparatus according to any one of claims 5 to 8, wherein a gas type switching mechanism is provided at the second ejection port. The processing apparatus according to any one of claims 5 to 9, wherein a mechanism for exhausting the inside of the ejection port is provided at the first ejection port and the third ejection port. An inner nozzle on the rear side with respect to the traveling direction of the first jet outlet, an outer nozzle arranged to surround the inner nozzle on the outer periphery of the inner nozzle, and an inner side for supplying a gas mainly composed of an inert gas to the inner nozzle A plasma generating head having a gas supply device for a nozzle, a gas supply device for an outer nozzle that supplies a gas that is harder to discharge than a gas ejected from the inner nozzle to the outer nozzle, and a power source that supplies a voltage to the electrode is arranged. The processing apparatus according to claim 5, wherein the processing apparatus is characterized. An electronic device characterized in that an outer periphery of a deposited vapor deposition material is concave compared to a central portion.

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