CN116313520A - Preparation method of electronic component and electronic component - Google Patents
Preparation method of electronic component and electronic component Download PDFInfo
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- CN116313520A CN116313520A CN202310323021.6A CN202310323021A CN116313520A CN 116313520 A CN116313520 A CN 116313520A CN 202310323021 A CN202310323021 A CN 202310323021A CN 116313520 A CN116313520 A CN 116313520A
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- 238000000151 deposition Methods 0.000 claims abstract description 104
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/30—Stacked capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/075—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thin film techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/25—Process efficiency
Abstract
The invention discloses a preparation method of an electronic component and the electronic component, wherein the preparation method of the electronic component comprises the following steps: providing a substrate; obtaining dielectric material powder and electrode material powder; suspending the dielectric material powder and the electrode material powder in a preset space, and sequentially and alternately depositing the dielectric material powder and the electrode material powder on the same side of the substrate through at least one of an electric field and a magnetic field to form sequentially and alternately arranged dielectric layers and inner electrode layers on the substrate; the dielectric layers and the internal electrode layers are alternately arranged in sequence and used for forming a laminated body; cutting the laminated body by laser to form an electronic component body; carrying out rapid sintering treatment on the electronic component body; and forming a first external electrode and a second external electrode at two opposite ends of the electronic component body respectively. The accuracy of film thickness control in the device is improved, a thinner dielectric layer and an electrode layer can be formed, and meanwhile, the quality of a product and the cleanness and environmental protection of the product preparation process are ensured.
Description
Technical Field
The embodiment of the invention relates to the technical field of electronic components, in particular to a preparation method of an electronic component and the electronic component.
Background
Electronic components are components of electronic components and various machines and instruments, common electronic components include: resistors, capacitors, inductors, valves, connectors, etc. The multilayer ceramic capacitor is one of ceramic capacitors, and has the characteristics of small volume, large capacity, low price, good stability, low loss rate in high-frequency use, suitability for mass production and the like.
Currently, the multilayer ceramic capacitor manufacturing process includes: taking a ceramic material as a medium, prefabricating ceramic slurry, and depositing to form a ceramic dielectric film; then printing an inner electrode on the ceramic dielectric film; alternately stacking the inner electrodes and the ceramic dielectric films to form a plurality of capacitors connected in parallel; forming an integral chip by sintering the laminated structure at a high temperature; and then, coating external electrodes on two ends of the chip, and forming good electrical connection with the internal electrodes to form two poles of the multilayer ceramic capacitor. When the ceramic dielectric film is prepared, the main raw material ceramic powder, the corresponding adhesive, the solvent and the additive are uniformly mixed, and the slurry obtained after the proportioning is formed into the dielectric film through a tape casting machine. However, after organic substances such as dispersing agents, binders, plasticizers and the like are added to the raw materials and mixed, there is a problem of precipitation of the solvent, and the solvent is also polluted in the later discharge of the solvent. In addition, the precision of the existing printing equipment is difficult to ensure that a ceramic film and an electrode film are uniformly coated, and the thickness is difficult to ensure to be less than 1 um; the ceramic dielectric film is formed by slurry casting, so that long sintering time is required when the ceramic dielectric film and the electrode film are co-fired, and the problem that interlayer cracking is caused because the shrinkage rate of the film layer is difficult to match with a heating curve exists.
Disclosure of Invention
The embodiment of the invention provides a preparation method of an electronic component and the electronic component, which are used for improving the accuracy of film thickness control, forming thinner dielectric layers and electrode layers and simultaneously ensuring the quality of products and the cleanness and environmental protection of the product preparation process.
According to an aspect of the present invention, there is provided a method for manufacturing an electronic component, including:
providing a substrate;
obtaining dielectric material powder and electrode material powder;
suspending the dielectric material powder and the electrode material powder in a preset space, and sequentially and alternately depositing the dielectric material powder and the electrode material powder on the same side of the substrate through at least one of an electric field and a magnetic field to form sequentially and alternately arranged dielectric layers and inner electrode layers on the substrate; the dielectric layers and the internal electrode layers are alternately arranged in sequence and are used for forming a laminated body;
cutting the laminated body by laser to form an electronic component body; wherein the laminated body comprises at least two dielectric layers and at least one inner electrode layer;
carrying out rapid sintering treatment on the electronic component body;
and a first external electrode and a second external electrode are respectively formed at two opposite ends of the electronic component body.
Optionally, obtaining the dielectric material powder and the electrode material powder further includes:
dispersing the dielectric material to obtain dielectric material powder;
dispersing the electrode material to obtain electrode material powder;
wherein the dispersion treatment includes at least one of an impinging stream dispersion treatment and an ultrasonic dispersion treatment.
Optionally, suspending the dielectric material powder and the electrode material powder in a preset space, and sequentially depositing the dielectric material powder and the electrode material powder alternately on the same side of the substrate through at least one of an electric field and a magnetic field to form sequentially alternately arranged dielectric layers and inner electrode layers on the substrate, including:
suspending the dielectric material powder in a preset gas environment or a vacuum environment, applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, and controlling the dielectric material powder to move towards a substrate direction to form the dielectric layer with a preset deposition thickness;
suspending the electrode material powder in a preset gas environment or a vacuum environment, applying at least one of an electric field and a magnetic field to the suspended electrode material powder, and controlling the electrode material powder to move towards a substrate direction to form the inner electrode layer with a preset deposition thickness;
And repeating the steps until the dielectric layers and the inner electrode layers with the first preset number of layers are obtained, and stopping depositing the dielectric layers and the inner electrode layers.
Optionally, suspending the dielectric material powder in a preset gas environment or vacuum environment includes:
the dielectric material powder is kept in a suspension state in a preset gas environment or a vacuum environment through electrostatic force; or, keeping the dielectric material powder in a suspension state in a preset gas environment or a vacuum environment through ultrasonic waves;
suspending the electrode material powder in a preset gas environment or vacuum environment, comprising:
maintaining the electrode material powder in a suspension state in a preset gas environment or a vacuum environment through electrostatic force; alternatively, the electrode material powder is kept in a suspended state in a preset gas atmosphere or in a vacuum atmosphere by ultrasonic waves.
Optionally, applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, controlling the dielectric material powder to move towards the substrate direction, forming the dielectric layer with a preset deposition thickness, and including:
applying at least one of an electric field and a magnetic field for a first preset time to the suspended dielectric material powder, and controlling the dielectric material powder to continuously move towards a substrate direction within the first preset time to form a dielectric layer with a deposition thickness corresponding to the first preset time;
Applying at least one of an electric field and a magnetic field to the suspended electrode material powder, controlling the movement of the electrode material powder toward a substrate direction, forming the inner electrode layer with a preset deposition thickness, comprising:
and applying at least one of an electric field and a magnetic field for a second preset time to the suspended electrode material powder, and controlling the electrode material powder to continuously move towards the substrate direction within the second preset time to form the inner electrode layer with a deposition thickness corresponding to the second preset time.
Optionally, applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, controlling the dielectric material powder to move towards the substrate direction, forming the dielectric layer with a preset deposition thickness, and including:
applying at least one of an electric field and a magnetic field with a first preset intensity to the suspended dielectric material powder, and controlling the dielectric material powder to move towards a substrate direction to form a dielectric layer with a deposition thickness related to the first preset intensity;
applying at least one of an electric field and a magnetic field to the suspended electrode material powder, controlling the movement of the electrode material powder toward a substrate direction, forming the inner electrode layer with a preset deposition thickness, comprising:
And applying at least one of an electric field and a magnetic field with a second preset intensity to the suspended electrode material powder, and controlling the electrode material powder to move towards the direction of the substrate to form the inner electrode layer with a deposition thickness related to the second preset intensity.
Optionally, the rapid sintering treatment includes at least one of a microwave heating sintering mode, an infrared heating sintering mode, and a heat conduction sintering mode.
Optionally, after the dielectric layer is formed by depositing dielectric material powder on one side of the substrate through at least one of an electric field and a magnetic field, the method further includes:
pre-curing the dielectric layer;
after forming an inner electrode layer by depositing electrode material powder by at least one of an electric field and a magnetic field on one side of the substrate, further comprising:
pre-curing the inner electrode layer;
wherein the pre-curing treatment comprises at least one of laser heating curing and liquid curing.
Optionally, after the pre-curing treatment is performed on the inner electrode layer, the method further includes:
etching the inner electrode layer after the pre-curing treatment to form an inner electrode corresponding to a preset conductor pattern;
or, modifying the area corresponding to the preset non-conductor pattern in the inner electrode layer after the pre-curing treatment to form the inner electrode.
According to an aspect of the present invention, there is provided an electronic component, which is characterized in that the electronic component is manufactured by the manufacturing method of the electronic component according to any embodiment of the present invention; the electronic component includes a capacitor, a resistor, or an inductor.
According to the technical scheme provided by the embodiment of the invention, dielectric material powder and electrode material powder are sequentially and alternately deposited on the same side of the substrate through at least one of an electric field and a magnetic field, so that sequentially and alternately arranged dielectric layers and inner electrode layers are formed on the substrate; the thickness of the powder deposition can be controlled more accurately through an electric field or a magnetic field, the accuracy of the process flow of manufacturing devices such as capacitors is improved, and smaller powder can be used for deposition to form a dielectric layer and an electrode layer which are thinner than those of the prior art; in addition, as the technical scheme provided by the invention does not increase organic substances in the deposition process, and does not naturally discharge organic substances in the sintering process, the impurity in the electronic components is reduced, the electronic components are cleaner and more environment-friendly, the product quality is improved, the electronic components are clean and environment-friendly, the electronic components do not need to be sintered for a long time, and the quick sintering mode is adopted, so that the problem of interlayer cracking caused by difficult matching of the shrinkage rate of the film layer and the temperature rising curve under the condition of overlong sintering time is solved, the yield of the electronic components is improved, and the production cost is reduced.
It should be understood that the description in this section is not intended to identify key or critical features of the embodiments of the invention or to delineate the scope of the invention. Other features of the present invention will become apparent from the description that follows.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for the description of the embodiments will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flowchart of a method for manufacturing an electronic component according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an electronic component according to an embodiment of the present invention;
FIG. 3 is a flowchart of another method for manufacturing an electronic component according to an embodiment of the present invention;
fig. 4 is a top view of the structure of step S210 in the method for manufacturing an electronic component according to the embodiment of the present invention;
FIG. 5 is a cross-sectional view of the structure of FIG. 4 taken along section line AA 1;
fig. 6 is a top view of the structure of step S230 in the method for manufacturing an electronic component according to the embodiment of the present invention;
FIG. 7 is a cross-sectional view of the structure of FIG. 6 taken along section line AA 1;
fig. 8 is a top view of a structure of step S250 in a method for manufacturing an electronic component according to an embodiment of the present invention;
FIG. 9 is a cross-sectional view of the structure of FIG. 8 taken along section line AA 1;
fig. 10 is a top view of a structure of step S270 in a method for manufacturing an electronic component according to an embodiment of the present invention;
FIG. 11 is a cross-sectional view of the structure of FIG. 10 taken along section line AA 1;
fig. 12 is a top view of a structure of step S280 in a method for manufacturing an electronic component according to an embodiment of the present invention;
FIG. 13 is a cross-sectional view of the structure of FIG. 12 taken along section line AA 1;
fig. 14 is a structural cross-sectional view of step S2100 in a method for manufacturing an electronic component according to an embodiment of the present invention;
fig. 15 is a cross-sectional view of a structure of an electronic component body after grinding two ends of the electronic component body in the method for manufacturing an electronic component according to an embodiment of the present invention;
fig. 16 is a cross-sectional view of a structure of an electronic component according to an embodiment of the present invention after a protective layer and an external connection layer are formed on two ends of an electronic component body, respectively.
Detailed Description
In order that those skilled in the art will better understand the present invention, a technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in which it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the present invention without making any inventive effort, shall fall within the scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and the claims of the present invention and the above figures are used for distinguishing between similar objects and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used may be interchanged where appropriate such that the embodiments of the invention described herein may be implemented in sequences other than those illustrated or otherwise described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
An embodiment of the present invention provides a method for manufacturing an electronic component, and fig. 1 is a flowchart of the method for manufacturing an electronic component provided in the embodiment of the present invention, and referring to fig. 1, the method for manufacturing an electronic component includes:
s110, providing a substrate.
S120, obtaining dielectric material powder and electrode material powder.
S130, suspending the dielectric material powder and the electrode material powder in a preset space, and sequentially and alternately depositing the dielectric material powder and the electrode material powder on the same side of the substrate through at least one of an electric field and a magnetic field to form sequentially and alternately arranged dielectric layers and inner electrode layers on the substrate; the dielectric layers and the internal electrode layers are alternately arranged in this order to form a laminate.
Specifically, in the process of preparing the dielectric layer, the dielectric material is dispersed into particles to form dielectric material powder. Each particle of the dielectric material powder is caused to adsorb a charge to form a charged particle. The charged dielectric material powder is placed in an electric field, coulomb force is applied to the charged particles through the electric field, and the charged particles move towards the direction of the substrate under the coulomb force, so that a dielectric layer is deposited on the surface of the substrate. Alternatively, the charged dielectric material powder may be placed in a magnetic field, and the lorentz force may be applied to the charged particles by the magnetic field, so that the charged particles are moved in the direction of the substrate by the lorentz force, and a dielectric layer may be deposited on the surface of the substrate. Alternatively, the charged dielectric material powder may be placed in a magnetic field and an electric field, and the charged particles may be moved in the direction of the substrate under the combined action of the electric field and the magnetic field, thereby depositing a dielectric layer on the surface of the substrate. The thickness of the dielectric material powder deposition can be controlled more precisely by the electric field and/or the magnetic field, and the deposition can be performed by using smaller powder, so that a dielectric layer thinner than the prior art is formed. The prefabricated ceramic slurry containing the substances such as the adhesive, the solvent, the additive and the like is not used, so compared with the prior art, the technical scheme provided by the invention has no emission of organic matters, improves the product quality, and is clean and environment-friendly. Preferably, in order to reduce the difficulty in controlling the movement direction of the charged particles, the dielectric material powder may be deposited on one side of the substrate by means of an electric field.
In the process of preparing the inner electrode layer, the electrode material is dispersed into particles to form electrode material powder. Each particle of the electrode material powder is made to adsorb electric charges to form charged particles. The charged electrode material powder is placed in an electric field, coulomb force is applied to the charged particles by the electric field, and the charged particles are moved toward the substrate by the coulomb force, so that an electrode layer is deposited on the surface of the substrate. Alternatively, the charged electrode material powder may be placed in a magnetic field, and the lorentz force may be applied to the charged particles by the magnetic field, so that the charged particles are moved in the direction of the substrate by the lorentz force, and the electrode layer may be deposited on the surface of the substrate. Alternatively, the charged electrode material powder may be placed in a magnetic field and an electric field, and the charged particles may be moved in the direction of the substrate by the combined action of the electric field and the magnetic field, thereby depositing an electrode layer on the surface of the substrate. The thickness of the electrode material powder deposition can be controlled more precisely by the electric and/or magnetic fields, and smaller powders can be used for deposition, resulting in a thinner dielectric layer than in the prior art. Preferably, in order to reduce the difficulty in controlling the movement direction of the charged particles, the electrode material powder may be deposited on one side of the substrate by means of an electric field.
The dielectric layer and the internal electrode layer are formed by sequentially and alternately depositing. That is, after forming a first dielectric layer on one side of the substrate, a first inter-electrode layer is formed on the surface of the first dielectric layer. And forming a second dielectric layer on the surface of the first inner electrode layer, and then forming a second inner electrode layer on the surface of the second dielectric layer. And by analogy, finishing the dielectric layers and the inner electrode layers with preset layers. The dielectric layers and the internal electrode layers are alternately arranged in this order to form a laminate.
S140, cutting the laminated body through laser to form an electronic component body; wherein the laminate comprises at least two dielectric layers and at least one internal electrode layer.
Specifically, the at least two dielectric layers comprise a first outer dielectric layer positioned at the bottommost layer of the laminated body and a second outer dielectric layer positioned at the topmost layer of the laminated body, namely, the first deposited material and the last deposited material are both dielectric materials, so that the inner electrode layer can be protected and the solid line is electrically insulated from the outside. And (3) carrying out laser cutting on the deposited laminated body to obtain electronic component bodies with the same size, and also cutting the laminated body into electronic component bodies with different sizes according to the requirement of the actual product size. The laminated body is irradiated by a high-power-density laser beam, so that the laminated body is heated to a vaporization temperature quickly, a part irradiated by the laser beam is vaporized to form holes, and slits with narrow widths are continuously formed in the holes along with the movement of the laser beam on the laminated body, so that the laminated body is cut. During cutting, the inner electrode tip needs to be exposed as much as possible. The laser beam gathers very little facula during laser cutting, and the facula is less than the edge of a knife when mechanical cutting, and cutting speed is fast, can improve the precision and the efficiency of lamination body cutting, and in addition, laser cutting does not have the blade that uses in the mechanical cutting, consequently does not need to contact with the lamination body, and the stress is little, is difficult to produce the defect.
S150, performing rapid sintering treatment on the electronic component body.
Specifically, after the carrier substrate is removed, the electronic component body is subjected to rapid sintering treatment, so that the dielectric layer and the inner electrode layer are integrated, and the electronic component body with certain strength and hardness is formed more densely. Wherein the rapid sintering treatment comprises at least one of a microwave heating sintering mode, an infrared heating sintering mode and a heat conduction sintering mode. Other rapid sintering processes may be used, and this is not a limitation of this embodiment. Since the invention does not use the prefabricated ceramic slurry containing organic matters such as adhesive, solvent, additive and the like in the process of depositing the dielectric layer and the electrode layer, the laminated body only comprises the dielectric layer material and the electrode layer material, so that evaporation of the organic matters and how to discharge the organic matters are not needed in the subsequent sintering treatment process, thereby reducing impurities in electronic components and being cleaner and more environment-friendly. And under the condition of not evaporating organic substances, the method does not need to sinter for a long time, and adopts a rapid sintering mode, so that the problem of interlayer cracking caused by difficult matching of the shrinkage rate of the film layer and a heating curve under the condition of overlong sintering time is solved, the yield of electronic components is improved, and the production cost is reduced.
S160, forming a first external electrode and a second external electrode at two opposite ends of the electronic component body respectively.
Specifically, the sintered electronic component body is placed in a tank, a certain proportion of grinding medium, water and the like are added for grinding, the edges and corners of the product are removed, the internal electrode is exposed, the contact with the external electrode is improved, and the end sealing of the product is facilitated. And forming an external electrode on two ends of the sintered product by using a blocking machine, namely forming a first external electrode and a second external electrode respectively, and drying at a low temperature. The first and second external electrodes are used to make the connection of the internal electrodes to an external circuit or device.
Fig. 2 is a schematic structural diagram of an electronic component according to an embodiment of the present invention, and referring to fig. 2, the electronic component is a multilayer capacitor device, and includes 5 dielectric layers 10 and 4 electrodes 21. The dielectric layers 10 and the internal electrodes 21 are alternately arranged in this order. The dielectric layer 10 includes a first outer dielectric layer 11 located at the bottommost layer of the electronic component and a second outer dielectric layer 12 located at the topmost layer of the electronic component. The left and right ends include a first external electrode 31 and a second external electrode 32, respectively.
According to the preparation method of the electronic component, provided by the embodiment of the invention, dielectric material powder and electrode material powder are sequentially and alternately deposited on the same side of the substrate through at least one of an electric field and a magnetic field, so that a dielectric layer and an inner electrode layer which are sequentially and alternately arranged are formed on the substrate; the thickness of powder deposition can be controlled more accurately through an electric field or a magnetic field, the accuracy of the process flow of manufacturing devices such as capacitors is improved, and smaller powder can be used for deposition to form a dielectric layer and an inner electrode layer which are thinner than those of the prior art; in addition, as the prefabricated ceramic slurry containing the substances such as the adhesive, the solvent and the additive is not used in the technical scheme provided by the invention, compared with the prior art, the technical scheme provided by the invention has the advantages that organic substances are not added in the deposition process, the emission of organic substances is naturally avoided in the sintering process, the impurities in electronic components are reduced, the electronic components are cleaner and more environment-friendly, the electronic components are not required to be sintered for a long time, the problem that interlayer cracking is caused due to the fact that the shrinkage rate of the film layer is difficult to match with the temperature rising curve under the condition of overlong sintering time is solved, the yield of the electronic components is improved, and the production cost is reduced. The electronic components prepared by the embodiment of the invention can comprise a capacitor, an inductor, a resistor and the like, are not limited to ceramic capacitors, and can be applied to various products with electronic components such as earphones, microphones and the like.
Fig. 3 is a flowchart of another method for manufacturing an electronic component according to an embodiment of the present invention, and referring to fig. 3, the method for manufacturing an electronic component includes:
s210, providing a substrate.
Specifically, fig. 4 is a top view of a structure of step S210 in a method for manufacturing an electronic component according to an embodiment of the present invention, and fig. 5 is a cross-sectional view along a section line AA1 in the structure shown in fig. 4. Referring to fig. 4 and 5, the material of the substrate 100 may be any material suitable for supporting the manufacturing process of the electronic component, for example, may be a material such as glass or silicon.
S220, performing dispersion treatment on the dielectric material to obtain dielectric material powder, and performing dispersion treatment on the electrode material to obtain electrode material powder; wherein the dispersion treatment includes at least one of an impinging stream dispersion treatment and an ultrasonic dispersion treatment.
Specifically, before the dielectric layer is formed by depositing dielectric material powder on one side of the substrate through at least one of an electric field and a magnetic field, the method further comprises: dispersing the dielectric material to obtain dielectric material powder; the dispersion treatment of the dielectric material includes at least one of an impinging stream dispersion treatment and an ultrasonic dispersion treatment. The method further includes, before depositing electrode material powder by at least one of an electric field and a magnetic field on one side of the substrate to form an inner electrode layer: dispersing the electrode material to obtain electrode material powder; the dispersion treatment of the electrode material includes at least one of an impinging stream dispersion treatment and an ultrasonic dispersion treatment.
The impinging stream is dispersed by using high pressure, high-speed turbulence and ultrasonic waves generated by the jet impinging device during the impinging collision process. In general, impinging stream technology is suitable for the dispersion of submicron powders. The ultrasonic dispersion treatment is performed by propagating ultrasonic waves in the form of standing waves in a dispersion system, so that the powder particles are periodically stretched and compressed to realize dispersion. The local high temperature, high pressure or strong shock wave, micro jet and the like generated during ultrasonic cavitation are utilized to weaken the action energy of the particles among the particles, and the agglomeration of the particles can be effectively prevented. The effect of ultrasonic dispersion is related to the frequency and power of the ultrasonic waves.
S230, suspending the dielectric material powder in a preset gas environment or a vacuum environment, applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, and controlling the dielectric material powder to move towards the direction of the substrate to form a dielectric layer with a preset deposition thickness.
Specifically, fig. 6 is a top view of a structure of step S230 in a method for manufacturing an electronic component according to an embodiment of the present invention, and fig. 7 is a cross-sectional view along a section line AA1 in the structure shown in fig. 6, and referring to fig. 6 and 7, dielectric material powder is suspended in a preset gas environment or vacuum environment, and at least one of an electric field and a magnetic field is applied to the suspended dielectric material powder, so as to control the dielectric material powder to move toward a substrate, and deposit the dielectric material powder on a surface of the substrate 100, thereby forming a dielectric layer 10 with a preset thickness.
The method for suspending the dispersed dielectric material powder in a preset gas environment or vacuum environment comprises the following steps: the dielectric material powder is kept in a suspended state in a preset gas environment or a vacuum environment by electrostatic force. Alternatively, the dielectric material powder is kept in a suspended state in a preset gas environment or a vacuum environment by ultrasonic waves. Suspending the dielectric material powder in a preset gas environment or vacuum environment can make the distribution of the powder particles more uniform, so that the uniformity of the thickness of the dielectric layer 10 can be improved after the dielectric layer 10 is formed under the action of an electric field or a magnetic field.
Wherein the material of the dielectric layer 10 includes, but is not limited to, ceramic, glass.
S240, performing pre-curing treatment on the dielectric layer; the pre-curing treatment of the dielectric layer comprises at least one of laser heating curing and liquid curing.
Specifically, in order to prevent the dielectric layer from changing at room temperature and affecting the preparation of the next film layer, the dielectric layer may be pre-cured, and after the preparation of all the dielectric layer and the internal electrode layer is completed in the subsequent preparation process, the final curing is performed. The pre-curing treatment of the dielectric layer can be laser heating curing or liquid curing. The liquid curing method is similar to end-capped sintering (drying), and can be performed by heating and drying by using a heating furnace to realize pre-curing. Because the deposited particles are in a solid state, the laser curing mode is adopted, so that the adhesion effect can be simply generated on the surface of the dielectric layer, and the deposition of the next layer is facilitated. Wherein the laser heating and curing can be performed by using high-frequency low-average power laser. At high frequencies, the density of the laser is relatively high; the energy of the laser is low under low power, so that the inside of the dielectric layer is not influenced when the surface layer of the dielectric layer is solidified.
S250, suspending the electrode material powder in a preset gas environment or a vacuum environment, applying at least one of an electric field and a magnetic field to the suspended electrode material powder, and controlling the electrode material powder to move towards the direction of the substrate to form an electrode layer with a preset deposition thickness.
Specifically, fig. 8 is a top view of a structure of step S250 in a method for manufacturing an electronic component according to an embodiment of the present invention, and fig. 9 is a cross-sectional view along a section line AA1 in the structure shown in fig. 8, and referring to fig. 8 and 9, electrode material powder is suspended in a predetermined gas environment or vacuum environment, at least one of an electric field and a magnetic field is applied to the suspended electrode material powder, the electrode material powder is controlled to move toward a substrate direction, and deposited on a surface of a dielectric layer 10, thereby forming an internal electrode layer 20 having a deposition thickness. The method for suspending the dispersed electrode material powder in a preset gas environment or vacuum environment comprises the following steps: the electrode material powder is maintained in a suspended state in a preset gas environment or in a vacuum environment by electrostatic force. Alternatively, the electrode material powder is kept in a suspended state in a preset gas atmosphere or in a vacuum atmosphere by ultrasonic waves. The electrode material powder is suspended in a preset gas environment or vacuum environment, so that the powder particles are distributed more uniformly, and the uniformity of the thickness of the inner electrode layer 20 can be improved after the inner electrode layer 20 is formed under the action of an electric field or a magnetic field.
The material of the inner electrode layer 20 is a metal material, including but not limited to nickel, silver, palladium, copper, platinum, and titanium.
S260, performing pre-curing treatment on the inner electrode layer; wherein the pre-curing treatment of the inner electrode layer includes at least one of laser heating curing and liquid curing.
Specifically, in order to prevent the inner electrode layer from being changed at room temperature and affecting the preparation of the next film layer, the inner electrode layer may be pre-cured, and after the preparation of all the dielectric layers and the inner electrode layer is completed in the subsequent preparation process, the final curing is performed. The pre-curing treatment of the inner electrode layer may be laser heat curing or liquid curing.
And S270, performing etching treatment or modification treatment on the inner electrode layer after the pre-curing treatment to form an inner electrode corresponding to the preset conductor pattern.
Specifically, fig. 10 is a top view of a structure of step S270 in a method for manufacturing an electronic component according to an embodiment of the present invention, and fig. 11 is a cross-sectional view along a section line AA1 in the structure shown in fig. 10, and referring to fig. 10 and 11, an etching process is performed on the inner electrode layer after the pre-curing process to form inner electrodes 21 corresponding to a preset conductor pattern, where each inner electrode layer may form a plurality of inner electrodes 21. Alternatively, the inner electrode 21 may be formed by modifying a region corresponding to a predetermined non-conductor pattern in the pre-cured inner electrode layer, and a plurality of inner electrodes 21 may be formed in each inner electrode layer. The shape of the inner electrode 21 includes at least one of a circle, an ellipse, a polygon, and a special shape. The shape of the inner electrode 21 is exemplarily drawn as a rectangle in fig. 10. The etching treatment of the inner electrode layer can be performed by adopting a laser etching mode. The laser etching uses high-power and high-frequency laser, and the generated heat is used for vaporizing the surface of the product, so that the etching effect is achieved. Modification of the inner electrode layer may include laser modification. The laser modification is to oxidize the area of the inner electrode layer to be modified by using laser and matching with oxygen.
S280, repeating the steps until the dielectric layers with the first preset number of layers and the inner electrode layers with the second preset number of layers are obtained, and stopping depositing the dielectric layers and the inner electrode layers.
Specifically, the steps S230 to S270 are repeated, and the dielectric layer and the internal electrode layer are alternately formed on the substrate in sequence until the preparation of the dielectric layer with the first preset number of layers and the internal electrode layer with the second preset number of layers is completed, so as to form a laminated body. The first preset layer number can be larger than or equal to the second preset layer number, and the laminated body comprises at least two dielectric layers and at least one inner electrode layer under the condition that the first preset layer number is larger than the second preset layer number; the at least two dielectric layers comprise a first outer dielectric layer positioned at the bottommost layer of the laminated body and a second outer dielectric layer positioned at the topmost layer of the laminated body. Fig. 12 is a top view of a structure of step S280 in a method for manufacturing an electronic component according to an embodiment of the present invention, and fig. 13 is a cross-sectional view along a section line AA1 in the structure shown in fig. 12, and referring to fig. 12 and fig. 13, a stacked body including 5 dielectric layers 10 and 4 electrode layers is illustrated. Each of the internal electrode layers includes a plurality of internal electrodes 21 therein. The dielectric layer 10 includes a first outer dielectric layer 11 located at the lowermost layer of the stack and a second outer dielectric layer 12 located at the uppermost layer of the stack.
In the process of manufacturing the multilayer capacitor, after etching treatment or modification treatment is performed on the adjacent two inner electrode layers, patterns formed by the adjacent two inner electrode layers have a preset offset in the direction perpendicular to the substrate. After the laminate is cut in the direction perpendicular to the substrate by the laser, two internal electrodes 21 adjacent in the thickness direction, one exposed from the first end of the electronic component body and the other exposed from the second end of the electronic component body opposite to the first end, can be made to prevent short-circuiting, so that two internal electrodes 21 adjacent in the thickness direction constitute one capacitor.
And S290, cutting the laminated body by laser to form the electronic component body.
And S2100, performing rapid sintering treatment on the electronic component body.
Specifically, fig. 14 is a structural cross-sectional view of step S2100 in the method for manufacturing an electronic component according to the embodiment of the present invention, and referring to fig. 14, after removing the carrier substrate, the electronic component body is subjected to rapid sintering treatment, so that the dielectric layer 10 and the inner electrode layer (21) are integrated and are more compact, thereby forming the electronic component body with a certain strength and hardness. Wherein the rapid sintering treatment comprises at least one of a microwave heating sintering mode, an infrared heating sintering mode and a heat conduction sintering mode. Other rapid sintering treatments may also be used. The two adjacent internal electrodes 21 of the electronic component body in the thickness direction are used to form a capacitor, and the multilayer capacitor is a capacitor comprising a plurality of capacitors connected in parallel. Each capacitor comprises a first internal electrode 211 and a second internal electrode 212, wherein in the preparation process, the first internal electrode 211 and the second internal electrode 212 have dislocation quantity, so that after the electronic component body is formed by cutting, the first internal electrode 211 can be exposed from a first end of the electronic component body, and the second internal electrode 212 can be exposed from a second end of the electronic component body opposite to the first end, thereby preventing short circuit.
S2110, forming a first external electrode and a second external electrode at opposite ends of the electronic component body.
According to the preparation method of the electronic component, on the basis of the embodiment, the dielectric material and the electrode material are dispersed by adopting an impact method or ultrasonic waves, so that dielectric material powder and electrode material powder are obtained; the dielectric material powder and the electrode material powder are kept in air or in suspension by electrostatic force or ultrasonic wave, and an electric field or magnetism is applied to the suspended powder for deposition. The dielectric material powder is suspended in a preset gas environment or vacuum environment, so that powder particles are distributed more uniformly, and the thickness uniformity of the dielectric layer can be improved after the dielectric layer is formed under the action of an electric field or a magnetic field. The electrode material powder is suspended in a preset gas environment or vacuum environment, so that powder particles are distributed more uniformly, and the uniformity of the thickness of the inner electrode layer can be improved after the inner electrode layer is formed under the action of an electric field or a magnetic field.
On the basis of the above embodiment, in still another embodiment of the present invention, suspending the dielectric material powder in a preset gas environment or vacuum environment in step S230, applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, controlling the dielectric material powder to move toward the substrate direction, forming a dielectric layer with a preset deposition thickness, including:
At least one of an electric field and a magnetic field is applied to the suspended dielectric material powder for a first preset time, and the dielectric material powder is controlled to continuously move towards the direction of the substrate within the first preset time, so that a dielectric layer 10 with a deposition thickness corresponding to the first preset time is formed.
Specifically, when an electric field is applied to the suspended dielectric material powder to deposit and form the dielectric layer 10, the duration of the continuous movement of the dielectric material powder towards the substrate can be controlled by controlling the duration of the applied electric field, so that the adjustment of the deposition thickness of the dielectric layer 10 is realized. The deposition thickness of the dielectric layer 10 is in positive correlation with the first preset time, and in the case of an increase in the time of applying the electric field, the deposition thickness of the dielectric layer 10 increases, and in the case of a decrease in the time of applying the electric field, the deposition thickness of the dielectric layer 10 decreases.
Or when the suspended dielectric material powder is applied with a magnetic field to deposit and form the dielectric layer 10, the duration of the continuous movement of the dielectric material powder towards the direction of the substrate can be controlled by controlling the duration of the applied magnetic field, so that the deposition thickness of the dielectric layer 10 is adjusted. The deposition thickness of the dielectric layer 10 is in positive correlation with the first preset time, and in the case of an increase in the time of applying the magnetic field, the deposition thickness of the dielectric layer 10 increases, and in the case of a decrease in the time of applying the magnetic field, the deposition thickness of the dielectric layer 10 decreases.
In still another embodiment of the present invention, suspending the dielectric material powder in a predetermined gas environment or vacuum environment in step S230, applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, controlling the dielectric material powder to move toward the substrate, forming a dielectric layer having a predetermined deposition thickness, includes:
at least one of an electric field and a magnetic field of a first preset intensity is applied to the suspended dielectric material powder, and the dielectric material powder is controlled to move towards the direction of the substrate, so that a dielectric layer 10 of a deposition thickness related to the first preset intensity is formed.
Specifically, when an electric field is applied to the suspended dielectric material powder to deposit the dielectric layer 10, the speed of the dielectric material powder moving towards the direction of the substrate can be controlled by controlling the strength of the applied electric field, so that the thickness of the dielectric layer 10 can be adjusted. There is a correlation between the deposition thickness of the dielectric layer 10 and the first preset intensity, which may be that the speed of movement of the dielectric material powder in the direction of the substrate increases in the case where the intensity of the applied electric field increases, the deposition thickness of the dielectric powder per unit time increases, and the speed of movement of the dielectric material powder in the direction of the substrate decreases in the case where the intensity of the applied electric field decreases, and the deposition thickness per unit time decreases. The correlation may be such that when the intensity of the applied electric field increases, the density of the dielectric powder in the space increases, the number of dielectric powder depositions per unit area increases, the deposition thickness of the dielectric powder increases, and when the intensity of the applied electric field decreases, the density of the dielectric powder in the space decreases, the number of dielectric powder depositions per unit area decreases, and the deposition thickness of the dielectric powder decreases.
Or when the suspended dielectric material powder is applied with a magnetic field to deposit and form the dielectric layer 10, the speed of the dielectric material powder moving towards the direction of the substrate can be controlled by controlling the intensity of the applied magnetic field, so that the thickness of the dielectric layer 10 can be adjusted. There is a correlation between the deposition thickness of the dielectric layer 10 and the second preset intensity, which may be that the velocity of movement of the dielectric material powder in the direction of the substrate increases in the case where the intensity of the applied magnetic field increases, the deposition thickness of the dielectric powder per unit time increases, the velocity of movement of the dielectric material powder in the direction of the substrate decreases in the case where the intensity of the applied magnetic field decreases, and the deposition thickness per unit time decreases. The correlation may be such that the density of the dielectric powder in the space increases, the number of deposits of the dielectric powder per unit area increases, the thickness of the deposits of the dielectric powder increases, and the density of the dielectric powder in the space decreases, the number of deposits of the dielectric powder per unit area decreases, and the thickness of the deposits of the dielectric powder decreases when the strength of the applied magnetic field decreases.
In other embodiments of the present invention, the speed of movement in the direction of the substrate may also be adjusted by controlling the charge of the dielectric material powder, thereby achieving adjustment of the thickness of the dielectric layer 10.
In summary, when the dielectric layer 10 is formed by applying an electric field to the suspended dielectric material powder and depositing the dielectric layer, the thickness of the dielectric layer 10 may be adjusted by controlling at least one of the magnitude of the electric field, the duration of the applied electric field, and the charge amount of the dielectric material powder. Wherein the larger the electric field and/or the larger the charged amount of the dielectric material powder, the coulomb force applied to the dielectric material powder can be increased, and thus the moving speed of the dielectric material powder, i.e., the greater the thickness of the deposited dielectric layer 10 per unit time, can be increased. The longer the duration of the applied electric field, the thickness of the deposited dielectric layer 10 can be increased as well.
Alternatively, when the dielectric layer 10 is formed by applying a magnetic field to the suspended dielectric material powder and depositing the dielectric layer, the thickness of the dielectric layer 10 may be adjusted by controlling at least one of the magnitude of the magnetic field, the duration of the applied magnetic field, and the charge amount of the dielectric material powder. Wherein the larger the magnetic field and/or the larger the charged amount of the dielectric material powder, the lorentz force applied to the dielectric material powder can be increased, and thus the moving speed of the dielectric material powder, i.e., the greater the thickness of the deposited dielectric layer 10 per unit time, can be increased. The longer the duration of the applied magnetic field, the thickness of the deposited dielectric layer 10 can be increased as well.
On the basis of the above embodiment, in still another embodiment of the present invention, suspending the electrode material powder in a preset gas environment or vacuum environment in step S250, applying at least one of an electric field and a magnetic field to the suspended electrode material powder, controlling the movement of the electrode material powder toward the substrate to form an inner electrode layer having a preset deposition thickness, includes:
at least one of an electric field and a magnetic field is applied to the suspended electrode material powder for a second preset time, and the electrode material powder is controlled to move continuously in the direction of the substrate for the second preset time, so that an inner electrode layer 20 with a deposition thickness corresponding to the second preset time is formed.
Specifically, when the suspended electrode material powder is applied with an electric field to deposit and form the inner electrode layer 20, the duration of the continuous movement of the electrode material powder towards the substrate can be controlled by controlling the duration of the applied electric field, so that the adjustment of the deposition thickness of the inner electrode layer 20 is realized. The deposition thickness of the inner electrode layer 20 is in positive correlation with the second preset time, and in the case of an increase in the duration of the applied electric field, the deposition thickness of the inner electrode layer 20 increases, and in the case of a decrease in the duration of the applied electric field, the longer the deposition thickness of the inner electrode layer 20 decreases, the thickness of the deposited inner electrode layer 20 can be increased.
Or when the suspended electrode material powder is applied with a magnetic field to deposit and form the inner electrode layer 20, the duration of the continuous movement of the electrode material powder towards the substrate can be controlled by controlling the duration of the applied magnetic field, so that the thickness of the inner electrode layer 20 can be adjusted. The deposition thickness of the inner electrode layer 20 is in positive correlation with the second preset time, and in the case of an increase in the time of applying the magnetic field, the deposition thickness of the inner electrode layer 20 increases, and in the case of a decrease in the time of applying the magnetic field, the deposition thickness of the inner electrode layer 20 increases
In still another embodiment of the present invention, suspending the electrode material powder in a predetermined gas atmosphere or vacuum atmosphere in step S230, applying at least one of an electric field and a magnetic field to the suspended electrode material powder, controlling the movement of the electrode material powder toward the substrate, forming an inner electrode layer having a predetermined deposition thickness, includes:
at least one of an electric field and a magnetic field of a second preset intensity is applied to the suspended electrode material powder, and the electrode material powder is controlled to move toward the substrate to form an inner electrode layer 20 of a deposition thickness associated with the second preset intensity.
Specifically, when the suspended electrode material powder is applied with an electric field to deposit and form the inner electrode layer 20, the speed of the electrode material powder moving towards the substrate direction can be controlled by controlling the intensity of the applied electric field, so that the thickness of the inner electrode layer 20 can be adjusted. There is a correlation between the deposition thickness of the inner electrode layer 20 and the second preset intensity, which may be that the rate of movement of the electrode material powder in the direction of the substrate increases in the case where the intensity of the applied electric field increases, the deposition thickness of the electrode powder per unit time increases, and the rate of movement of the electrode material powder in the direction of the substrate decreases in the case where the intensity of the applied electric field decreases, and the deposition thickness per unit time decreases. The correlation may be such that the density of the electrode material powder in the space increases when the intensity of the applied electric field increases, the number of electrode powder depositions per unit area increases, the deposition thickness of the electrode powder increases, the density of the electrode material powder in the space decreases when the intensity of the applied electric field decreases, the number of electrode powder depositions per unit area decreases, and the deposition thickness of the electrode powder decreases.
Or when the suspended electrode material powder is applied with a magnetic field to deposit and form the inner electrode layer 20, the speed of the electrode material powder moving towards the direction of the substrate can be controlled by controlling the intensity of the applied magnetic field, so that the deposition thickness of the inner electrode layer 20 is adjusted. There is a correlation between the deposition thickness of the inner electrode layer 20 and the second preset intensity, which may be that the rate of movement of the electrode material powder in the direction of the substrate increases in the case where the intensity of the applied magnetic field increases, the deposition thickness of the electrode powder per unit time increases, and the rate of movement of the electrode material powder in the direction of the substrate decreases in the case where the intensity of the applied magnetic field decreases, and the deposition thickness per unit time decreases. The correlation may be such that the density of the electrode material powder in the space increases when the strength of the applied magnetic field increases, the number of electrode powder depositions per unit area increases, the deposition thickness of the electrode powder increases, the density of the electrode material powder in the space decreases when the strength of the applied magnetic field decreases, the number of electrode powder depositions per unit area decreases, and the deposition thickness of the electrode powder decreases.
In other embodiments of the present invention, the speed of movement in the direction of the substrate may also be adjusted by controlling the charge amount of the electrode material powder, thereby achieving adjustment of the thickness of the inner electrode layer 20.
In summary, when the inner electrode layer 20 is formed by depositing the suspended electrode material powder by applying an electric field, the thickness of the inner electrode layer 20 can be adjusted by controlling at least one of the magnitude of the electric field, the duration of the applied electric field, and the charge amount of the electrode material powder. Wherein the larger the electric field and/or the larger the charged amount of the electrode material powder, the coulomb force applied to the electrode material powder can be increased, and thus the moving speed of the electrode material powder, i.e., the thickness of the deposited inner electrode layer 20 in unit time can be increased. The longer the duration of the applied electric field, the thickness of the deposited inner electrode layer 20 can be increased as well.
Alternatively, when the suspended electrode material powder is applied with a magnetic field and deposited to form the inner electrode layer 20, the thickness of the inner electrode layer 20 may be adjusted by controlling at least one of the magnitude of the magnetic field, the duration of the applied magnetic field, and the charge amount of the electrode material powder. Wherein the larger the magnetic field and/or the larger the charged amount of the electrode material powder, the lorentz force applied to the electrode material powder can be increased, and thus the moving speed of the electrode material powder, that is, the greater the thickness of the deposited inner electrode layer 20 per unit time can be increased. The longer the duration of the applied magnetic field, the thickness of the deposited inner electrode layer 20 can be increased as well.
On the basis of the above embodiment, in still another embodiment of the present invention, the first external electrode and the second external electrode are formed at opposite ends of the electronic component body in S160 and S2110 in the above embodiment, respectively. Forming a first external electrode and a second external electrode at opposite ends of the electronic component body, respectively, comprising:
grinding the opposite ends of the electronic component body to completely expose at least one end of the inner electrode layer;
and respectively dip-coating conductive materials at two ends of the ground electronic component body to form a first external electrode and a second external electrode.
Specifically, fig. 15 is a cross-sectional view of a structure of an electronic component body after grinding both ends of the electronic component body in the method for manufacturing an electronic component according to the embodiment of the present invention, and referring to fig. 15, fig. 14 is compared, and the electronic component body and the grinding stone are mixed and stirred. The polishing amount is controlled by controlling the amount of the polishing material, the rotational speed of the apparatus, etc., and the product is chamfered to achieve a state in which the inner electrode 21 can be exposed, thereby improving the contact with the outer electrode to facilitate the end-capping of the product. The end capping is to coat copper electrode slurry at two ends of the electronic component body, so that the compactness of the product is ensured. The main process comprises the following steps: and fixing the electronic component body, dipping one end of the electronic component body into a copper slurry tank, and then burning the end. After one end is dried, the end of the other end is capped by the same procedure. Referring to fig. 2, after the end capping process is completed at both ends of the electronic component body, the first and second external electrodes 31 and 32 are formed at opposite ends of the electronic component body, respectively.
In another embodiment of the present invention, after the two ends of the ground electronic component body are respectively dip-coated with the conductive material to form the first external electrode and the second electrode, the method further includes:
and burning the two ends of the electronic component body, sequentially forming a first protection layer and a first external electrode layer on the surface of the first external electrode, and sequentially forming a second protection layer and a second external electrode layer on the surface of the second external electrode.
Specifically, fig. 16 is a cross-sectional view of a structure of an electronic component according to an embodiment of the present invention after forming a protective layer and an external connection layer on two ends of an electronic component body, and referring to fig. 16, after completing the preparation of a first external electrode 31 and a second external electrode 32, a first protective layer 311 and a first external electrode layer 312 may be sequentially formed on the surface of the first external electrode 31. The material of the first protective layer 311 may be Ni, and the material of the first external electrode layer 312 may be Sn. The first protective layer 311 and the first external electrode layer 312 may be prepared by electrolytic plating. And sequentially forming a second protective layer 321 and a second external electrode layer 322 on the surface of the second external electrode 32. The material of the second protective layer 321 may be Ni, and the material of the second external electrode layer 322 may be Sn. The second protective layer 321 and the second external electrode layer 322 may each be prepared by electrolytic plating.
The electroplated Ni layer (first protective layer 311/second protective layer 321) can protect the copper electrode (first external electrode 31/second external electrode 32) and prevent the copper electrode and the Sn layer (first external electrode layer 312/second external electrode layer 322) from forming an alloy state. The Sn plating layer can enable the two ends of the electronic component body to have good solderability, and the electronic component is easy to mount, for example, the electronic component is in welding combination with a bonding pad on a PCB substrate.
Referring to fig. 2, an embodiment of the present invention further provides an electronic component, which is manufactured by using the manufacturing method of the electronic component described in any of the above embodiments, where the electronic component includes, but is not limited to, various types of capacitors including stacked structures, various types of resistors including stacked structures, and various types of inductors including stacked structures, and the capacitors, resistors, or inductors may be applied to various types of electronic products, including, but not limited to, acoustic modules, optical modules, wireless charging, power devices, communication devices, and so on. Has the same technical effects and is not described in detail herein.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (10)
1. The preparation method of the electronic component is characterized by comprising the following steps:
providing a substrate;
obtaining dielectric material powder and electrode material powder;
suspending the dielectric material powder and the electrode material powder in a preset space, and sequentially and alternately depositing the dielectric material powder and the electrode material powder on the same side of the substrate through at least one of an electric field and a magnetic field to form sequentially and alternately arranged dielectric layers and inner electrode layers on the substrate; the dielectric layers and the internal electrode layers are alternately arranged in sequence and are used for forming a laminated body;
cutting the laminated body by laser to form an electronic component body; wherein the laminated body comprises at least two dielectric layers and at least one inner electrode layer;
carrying out rapid sintering treatment on the electronic component body;
and a first external electrode and a second external electrode are respectively formed at two opposite ends of the electronic component body.
2. The method of manufacturing an electronic component according to claim 1, wherein obtaining the dielectric material powder and the electrode material powder comprises:
dispersing the dielectric material to obtain dielectric material powder;
dispersing the electrode material to obtain electrode material powder;
Wherein the dispersion treatment includes at least one of an impinging stream dispersion treatment and an ultrasonic dispersion treatment.
3. The method of manufacturing an electronic component according to claim 1, wherein suspending the dielectric material powder and the electrode material powder in a predetermined space, sequentially alternately depositing the dielectric material powder and the electrode material powder on the same side of the substrate by at least one of an electric field and a magnetic field to form sequentially alternately arranged dielectric layers and internal electrode layers on the substrate, comprising:
suspending the dielectric material powder in a preset gas environment or a vacuum environment, applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, and controlling the dielectric material powder to move towards a substrate direction to form the dielectric layer with a preset deposition thickness;
suspending the electrode material powder in a preset gas environment or a vacuum environment, applying at least one of an electric field and a magnetic field to the suspended electrode material powder, and controlling the electrode material powder to move towards a substrate direction to form the inner electrode layer with a preset deposition thickness;
and repeating the steps until the dielectric layers and the inner electrode layers with the first preset number of layers are obtained, and stopping depositing the dielectric layers and the inner electrode layers.
4. The method for manufacturing an electronic component according to claim 3, wherein,
suspending the dielectric material powder in a preset gas environment or vacuum environment, wherein the method comprises the following steps of:
the dielectric material powder is kept in a suspension state in a preset gas environment or a vacuum environment through electrostatic force; or, keeping the dielectric material powder in a suspension state in a preset gas environment or a vacuum environment through ultrasonic waves;
suspending the electrode material powder in a preset gas environment or vacuum environment, comprising:
maintaining the electrode material powder in a suspension state in a preset gas environment or a vacuum environment through electrostatic force; alternatively, the electrode material powder is kept in a suspended state in a preset gas atmosphere or in a vacuum atmosphere by ultrasonic waves.
5. A method of manufacturing an electronic component according to claim 3, wherein applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, controlling movement of the dielectric material powder in a direction of a substrate, forming the dielectric layer having a predetermined deposition thickness, comprises:
applying at least one of an electric field and a magnetic field to the suspended dielectric material powder for a first preset time, controlling the dielectric material powder to continuously move towards a substrate direction within the first preset time, forming at least one of the electric field and the magnetic field to the suspended electrode material powder by the dielectric layer with a deposition thickness corresponding to the first preset time, controlling the electrode material powder to move towards the substrate direction, forming the inner electrode layer with the preset deposition thickness, and comprising:
And applying at least one of an electric field and a magnetic field for a second preset time to the suspended electrode material powder, and controlling the electrode material powder to continuously move towards the substrate direction within the second preset time to form the inner electrode layer with a deposition thickness corresponding to the second preset time.
6. A method of manufacturing an electronic component according to claim 3, wherein applying at least one of an electric field and a magnetic field to the suspended dielectric material powder, controlling movement of the dielectric material powder in a direction of a substrate, forming the dielectric layer having a predetermined deposition thickness, comprises:
applying at least one of an electric field and a magnetic field with a first preset intensity to the suspended dielectric material powder, and controlling the dielectric material powder to move towards a substrate direction to form a dielectric layer with a deposition thickness related to the first preset intensity; applying at least one of an electric field and a magnetic field to the suspended electrode material powder, controlling the movement of the electrode material powder toward a substrate direction, forming the inner electrode layer with a preset deposition thickness, comprising:
and applying at least one of an electric field and a magnetic field with a second preset intensity to the suspended electrode material powder, and controlling the electrode material powder to move towards the direction of the substrate to form the inner electrode layer with a deposition thickness related to the second preset intensity.
7. The method of manufacturing an electronic component according to claim 1, wherein the rapid sintering treatment includes at least one of a microwave heating sintering method, an infrared heating sintering method, and a heat conduction sintering method.
8. The method for manufacturing an electronic component according to claim 1, wherein,
after forming a dielectric layer by depositing dielectric material powder by at least one of an electric field and a magnetic field on one side of the substrate, the method further comprises:
pre-curing the dielectric layer;
after forming an inner electrode layer by depositing electrode material powder by at least one of an electric field and a magnetic field on one side of the substrate, further comprising:
pre-curing the inner electrode layer;
wherein the pre-curing treatment comprises at least one of laser heating curing and liquid curing.
9. The method of manufacturing an electronic component according to claim 6, further comprising, after the pre-curing treatment of the internal electrode layer:
etching the inner electrode layer after the pre-curing treatment to form an inner electrode corresponding to a preset conductor pattern;
or, modifying the area corresponding to the preset non-conductor pattern in the inner electrode layer after the pre-curing treatment to form the inner electrode.
10. An electronic component characterized by being produced by the method for producing an electronic component according to any one of claims 1 to 9; the electronic component includes a capacitor, a resistor, or an inductor.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310323021.6A CN116313520A (en) | 2023-03-29 | 2023-03-29 | Preparation method of electronic component and electronic component |
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| CN202310323021.6A CN116313520A (en) | 2023-03-29 | 2023-03-29 | Preparation method of electronic component and electronic component |
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| CN202310323021.6A Pending CN116313520A (en) | 2023-03-29 | 2023-03-29 | Preparation method of electronic component and electronic component |
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