JPH0725688Y2 - 半導体イオンセンサ - Google Patents

半導体イオンセンサ

Info

Publication number
JPH0725688Y2
JPH0725688Y2 JP1985194943U JP19494385U JPH0725688Y2 JP H0725688 Y2 JPH0725688 Y2 JP H0725688Y2 JP 1985194943 U JP1985194943 U JP 1985194943U JP 19494385 U JP19494385 U JP 19494385U JP H0725688 Y2 JPH0725688 Y2 JP H0725688Y2
Authority
JP
Japan
Prior art keywords
region
island
ion sensor
semiconductor ion
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP1985194943U
Other languages
English (en)
Japanese (ja)
Other versions
JPS62102160U (enExample
Inventor
善孝 伊藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP1985194943U priority Critical patent/JPH0725688Y2/ja
Publication of JPS62102160U publication Critical patent/JPS62102160U/ja
Application granted granted Critical
Publication of JPH0725688Y2 publication Critical patent/JPH0725688Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP1985194943U 1985-12-18 1985-12-18 半導体イオンセンサ Expired - Lifetime JPH0725688Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1985194943U JPH0725688Y2 (ja) 1985-12-18 1985-12-18 半導体イオンセンサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1985194943U JPH0725688Y2 (ja) 1985-12-18 1985-12-18 半導体イオンセンサ

Publications (2)

Publication Number Publication Date
JPS62102160U JPS62102160U (enExample) 1987-06-29
JPH0725688Y2 true JPH0725688Y2 (ja) 1995-06-07

Family

ID=31152383

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1985194943U Expired - Lifetime JPH0725688Y2 (ja) 1985-12-18 1985-12-18 半導体イオンセンサ

Country Status (1)

Country Link
JP (1) JPH0725688Y2 (enExample)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5676042A (en) * 1979-11-28 1981-06-23 Shindengen Electric Mfg Co Ltd Field effect transistor for ion sensor
JPS59100851A (ja) * 1982-12-02 1984-06-11 Nec Corp 半導体イオンセンサ
JPS59206756A (ja) * 1983-05-11 1984-11-22 Hitachi Ltd 参照電極を一体化したｆｅｔ化学センサ−
JPS59225344A (ja) * 1983-06-06 1984-12-18 Sanken Electric Co Ltd イオンセンサ−用絶縁ゲ−ト電界効果トランジスタ

Also Published As

Publication number Publication date
JPS62102160U (enExample) 1987-06-29

Similar Documents

Publication Publication Date Title
JPH0714009B2 (ja) Ｍｏｓ型半導体記憶回路装置
EP0510604A3 (en) Semiconductor device and method of manufacturing the same
JPH03270273A (ja) 半導体装置およびその製造方法
WO1997002592A3 (en) Power semiconductor devices
JPS6397248U (enExample)
JPH01123476A (ja) 半導体装置およびその製法
JPS5884461A (ja) 絶縁ゲ−ト型半導体装置
JPH02110976A (ja) 絶縁ゲート型半導体装置
JP2537354B2 (ja) 半導体イオンセンサ
JP2883779B2 (ja) 半導体装置
JPH061816B2 (ja) 半導体装置の製造方法
JP2988020B2 (ja) 半導体イオンセンサ
JPS57192069A (en) Insulated gate field effect semiconductor device
JPS5848469A (ja) 電界効果トランジスタ
JPS6410673A (en) Non volatile semiconductor memory device
JPH04239137A (ja) 縦型電界効果トランジスタ
JPS62110145A (ja) 環境検知装置及びその製造方法
JPH0513016Y2 (enExample)
JP3385835B2 (ja) 誘電体分離型半導体装置
JPH0339585B2 (enExample)
JPS627160A (ja) 半導体装置
JPH0576770B2 (enExample)
JPH035668B2 (enExample)
JPS62102160U (enExample)
JPS60138928A (ja) 半導体装置