JPH07253674A - 反射防止膜材料 - Google Patents

反射防止膜材料

Info

Publication number
JPH07253674A
JPH07253674A JP6905094A JP6905094A JPH07253674A JP H07253674 A JPH07253674 A JP H07253674A JP 6905094 A JP6905094 A JP 6905094A JP 6905094 A JP6905094 A JP 6905094A JP H07253674 A JPH07253674 A JP H07253674A
Authority
JP
Japan
Prior art keywords
group
antireflection film
resist
film material
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6905094A
Other languages
English (en)
Japanese (ja)
Inventor
Katsuya Takemura
勝也 竹村
Toshinobu Ishihara
俊信 石原
Satoshi Watanabe
聡 渡辺
Kazumasa Maruyama
和政 丸山
Hirobumi Kinoshita
博文 木下
Koichi Yamaguchi
浩一 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP6905094A priority Critical patent/JPH07253674A/ja
Priority to KR1019950005270A priority patent/KR100256027B1/ko
Publication of JPH07253674A publication Critical patent/JPH07253674A/ja
Priority to US08/672,961 priority patent/US5728508A/en
Pending legal-status Critical Current

Links

Landscapes

  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
JP6905094A 1994-03-14 1994-03-14 反射防止膜材料 Pending JPH07253674A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP6905094A JPH07253674A (ja) 1994-03-14 1994-03-14 反射防止膜材料
KR1019950005270A KR100256027B1 (ko) 1994-03-14 1995-03-14 반사방지막재료
US08/672,961 US5728508A (en) 1994-03-14 1996-07-01 Method of forming resist pattern utilizing fluorinated resin antireflective film layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6905094A JPH07253674A (ja) 1994-03-14 1994-03-14 反射防止膜材料

Publications (1)

Publication Number Publication Date
JPH07253674A true JPH07253674A (ja) 1995-10-03

Family

ID=13391366

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6905094A Pending JPH07253674A (ja) 1994-03-14 1994-03-14 反射防止膜材料

Country Status (2)

Country Link
JP (1) JPH07253674A (ko)
KR (1) KR100256027B1 (ko)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004511006A (ja) * 2000-09-19 2004-04-08 シップレーカンパニー　エル　エル　シー 反射防止組成物
WO2004074937A1 (ja) * 2003-02-20 2004-09-02 Tokyo Ohka Kogyo Co., Ltd. 液浸露光プロセス用レジスト保護膜形成用材料、複合膜、およびレジストパターン形成方法
WO2004088429A1 (ja) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
JP2006058739A (ja) * 2004-08-23 2006-03-02 Tokyo Ohka Kogyo Co Ltd 電子線又はｅｕｖリソグラフィーに用いられるレジスト層用の保護膜形成用材料、積層体、およびレジストパターン形成方法
KR100687727B1 (ko) * 2005-06-25 2007-03-02 학교법인 포항공과대학교 반사방지 필름의 제조방법 및 그로부터 제조된 반사방지필름
EP1820061A1 (en) * 2004-11-03 2007-08-22 International Business Machines Corporation Silicon containing tarc/barrier layer
US7384730B2 (en) 2004-11-19 2008-06-10 Samsung Electronics Co., Ltd. Top coating composition for photoresist and method of forming photoresist pattern using same

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005069076A1 (ja) * 2004-01-15 2005-07-28 Jsr Corporation 液浸用上層膜形成組成物およびフォトレジストパターン形成方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4772268B2 (ja) * 2000-09-19 2011-09-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． 反射防止組成物
JP2004511006A (ja) * 2000-09-19 2004-04-08 シップレーカンパニー　エル　エル　シー 反射防止組成物
EP1596251A4 (en) * 2003-02-20 2009-05-20 Tokyo Ohka Kogyo Co Ltd IMERSION EXPOSURE USE RESEARCH FILM EDUCATION MATERIAL, COMPILED FILM AND RESISTMAT EDUCATION PROCESS
WO2004074937A1 (ja) * 2003-02-20 2004-09-02 Tokyo Ohka Kogyo Co., Ltd. 液浸露光プロセス用レジスト保護膜形成用材料、複合膜、およびレジストパターン形成方法
EP1596251A1 (en) * 2003-02-20 2005-11-16 Tokyo Ohka Kogyo Co., Ltd. Immersion exposure process-use resist protection film forming material, composite film, and resist pattern forming method
US7371510B2 (en) 2003-02-20 2008-05-13 Tokyo Ohka Kogyo Co., Ltd. Material for forming resist protecting film for use in liquid immersion lithography process, composite film, and method for forming resist pattern
WO2004088429A1 (ja) * 2003-03-28 2004-10-14 Tokyo Ohka Kogyo Co. Ltd. 液浸露光プロセス用レジスト組成物および該レジスト組成物を用いたレジストパターン形成方法
US7264918B2 (en) 2003-03-28 2007-09-04 Tokyo Ohka Kogyo Co., Ltd. Resist composition for liquid immersion exposure process and method of forming resist pattern therewith
JP2006058739A (ja) * 2004-08-23 2006-03-02 Tokyo Ohka Kogyo Co Ltd 電子線又はｅｕｖリソグラフィーに用いられるレジスト層用の保護膜形成用材料、積層体、およびレジストパターン形成方法
EP1820061A1 (en) * 2004-11-03 2007-08-22 International Business Machines Corporation Silicon containing tarc/barrier layer
JP2008519297A (ja) * 2004-11-03 2008-06-05 インターナショナル・ビジネス・マシーンズ・コーポレーション シリコン含有上面反射防止コーティング材料／障壁層および該層形成方法
EP1820061A4 (en) * 2004-11-03 2010-09-22 Ibm TARC LAYER / BARRIER CONTAINING SILICON
JP4831777B2 (ja) * 2004-11-03 2011-12-07 インターナショナル・ビジネス・マシーンズ・コーポレーション シリコン含有上面反射防止コーティング材料／障壁層および該層形成方法
US7384730B2 (en) 2004-11-19 2008-06-10 Samsung Electronics Co., Ltd. Top coating composition for photoresist and method of forming photoresist pattern using same
KR100687727B1 (ko) * 2005-06-25 2007-03-02 학교법인 포항공과대학교 반사방지 필름의 제조방법 및 그로부터 제조된 반사방지필름

Also Published As

Publication number Publication date
KR100256027B1 (ko) 2000-06-01

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