JPH0722894A - Ceramic oscillation element and piezoelectric oscillator using the same - Google Patents

Ceramic oscillation element and piezoelectric oscillator using the same

Info

Publication number
JPH0722894A
JPH0722894A JP5189234A JP18923493A JPH0722894A JP H0722894 A JPH0722894 A JP H0722894A JP 5189234 A JP5189234 A JP 5189234A JP 18923493 A JP18923493 A JP 18923493A JP H0722894 A JPH0722894 A JP H0722894A
Authority
JP
Japan
Prior art keywords
layer
ceramic
layers
gold
piezoelectric ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5189234A
Other languages
Japanese (ja)
Inventor
Hisaya Yoshimoto
久哉 吉本
Ikuo Matsumoto
伊久夫 松本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP5189234A priority Critical patent/JPH0722894A/en
Publication of JPH0722894A publication Critical patent/JPH0722894A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To provide a ceramic oscillation element comprised by forming conductor layers on the upper and lower planes of a piezoelectric ceramic element body in which oscillation stop and characteristic deterioration due to use environment, etc., can be prevented from occurring due to working environment by constituting a dielectric layer of two layers of chlome-gold or nickel chlomium alloy-gold. CONSTITUTION:The conductor layer 3 consisting of the two layers of a chrome layer 3a (for example, of layer thickness of around 0.3mum) and a gold layer 3b (for example, of layer thickness of around 0.3mum) is provided on the upper plane of a plate shape piezoelectric ceramic element body 2 extending over a center part from one end part and the conductor layer 4 consisting of the two layers of a chrome layer 4a and a gold layer 4b similarly as the conductor layer 3 is provided on the lower surface of the piezoelectric ceramic element body 2 extending over the center part from the other end part of the piezoelectric ceramic element body and so as to plane-polymerize a part of it at the upper and lower planes of the center part of the conductor layer 3 provided at the upper plane and the piezoelectric ceramic element body 2 in the ceramic oscillation element 1. Therefore, no migration occurs in the conductor layers 3, 4, and the ones hard to be oxidized can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、セラミック発振素子及
びこれを発振素子として用いる圧電発振子に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a ceramic oscillator and a piezoelectric oscillator using the same as an oscillator.

【0002】[0002]

【従来の技術】例えば、面実装タイプの圧電発振子は、
図4に示すように、セラミック等からなるベース基板1
0と、該ベース基板10の両端部に形成された端子電極
11と、上記ベース基板10と所定の間隔を隔てて上記
端子電極11に両端部を導電性ペースト12により接続
されたセラミック発振素子13と、該セラミック発振素
子13を覆い上記ベース基板10の周縁部にガラスフリ
ット等の絶縁層を介して取り付けられるキャップ14と
を具備するという構造を有する。
2. Description of the Related Art For example, a surface mount type piezoelectric oscillator is
As shown in FIG. 4, the base substrate 1 made of ceramic or the like
0, terminal electrodes 11 formed on both ends of the base substrate 10, and a ceramic oscillator 13 having both ends connected to the terminal electrode 11 with a conductive paste 12 at a predetermined distance from the base substrate 10. And a cap 14 that covers the ceramic oscillation element 13 and is attached to the peripheral portion of the base substrate 10 via an insulating layer such as glass frit.

【0003】従来、上記のような圧電発振子に用いられ
る上記セラミック発振素子13は、図5及び図6に示す
ように、板状の圧電セラミック素体15の上面及び下面
に銀、銅−銀合金、又は銅−銀の二層からなる導電層1
6,17が圧電セラミック素体15の中央部において一
部が平面視重合して設けられてなるものである。
Conventionally, as shown in FIGS. 5 and 6, the ceramic oscillation element 13 used in the above-described piezoelectric oscillator has silver or copper-silver on the upper and lower surfaces of a plate-shaped piezoelectric ceramic body 15. Conductive layer 1 composed of an alloy or two layers of copper-silver
Reference numerals 6 and 17 are provided in such a manner that a part of the piezoelectric ceramic body 15 is superposed in plan view in the central portion.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、上記の
ような従来のセラミック発振素子は、圧電発振子におい
て、キャップ等でパッケージされて気密封止されてはい
るものの、使用時に高温となったり、水分がパッケージ
内に侵入したり、高温又は高湿の使用環境において用い
られたりした場合に、セラミック発振素子の導電層の成
分である銀、銅又は銅−銀合金が圧電セラミック素体の
内部及び/又は側面にマイグレーションを起こし、セラ
ミック発振素子の特性劣化、更にはセラミック発振素子
上下面の導電層間でのショート或いは導電層の消滅によ
るオープンによる発振停止等を招くという問題があっ
た。
However, although the conventional ceramic oscillating device as described above is hermetically sealed by being packaged with a cap or the like in the piezoelectric oscillator, it becomes hot and moisture When it penetrates into the package or is used in a high temperature or high humidity environment, silver, copper, or a copper-silver alloy, which is a component of the conductive layer of the ceramic oscillation element, can be absorbed inside and / or inside the piezoelectric ceramic body. Alternatively, there is a problem in that migration occurs on the side surface, which leads to deterioration of the characteristics of the ceramic oscillation element and further causes oscillation stop due to short circuit between the conductive layers on the upper and lower surfaces of the ceramic oscillation element or the opening due to disappearance of the conductive layer.

【0005】一方、従来のセラミック発振素子における
導電層の表層となる銀層又は銅−銀合金層が高温又は高
湿下での動作において容易に酸化されてしまい導通不良
を招く恐れがある。
On the other hand, the silver layer or the copper-silver alloy layer, which is the surface layer of the conductive layer in the conventional ceramic oscillating device, may be easily oxidized during operation under high temperature or high humidity, resulting in poor conduction.

【0006】また、導電層が銅−銀の二層からなる場合
は、銅層と銀層の界面において銅又は銀がマイグレーシ
ョンを起こし、導電層に電圧を印加したときの導通状態
が変化して特性劣化を生じるという危険性もあった。
When the conductive layer is composed of two layers of copper-silver, copper or silver migrates at the interface between the copper layer and the silver layer, and the conduction state changes when a voltage is applied to the conductive layer. There was also a risk that characteristic deterioration would occur.

【0007】本発明は、上記問題を解消し、セラミック
発振素子上下面の導電層間でのショート不良又は導電層
の消滅により生じるオープン不良による発振停止、使用
環境による特性劣化等の発生することのない信頼性及び
耐環境性に優れた圧電発振子を提供することを目的とす
る。
The present invention solves the above problems and does not cause oscillation stop due to a short circuit defect between the conductive layers on the upper and lower surfaces of the ceramic oscillation element or an open defect caused by disappearance of the conductive layer, and characteristic deterioration due to use environment. It is an object of the present invention to provide a piezoelectric oscillator having excellent reliability and environmental resistance.

【0008】[0008]

【課題を解決するための手段】本発明者は、上記目的を
達成すべく鋭意研究を重ねた結果、セラミック発振素子
における導電層をクロム−金又はニッケル−クロム合金
−金の二層としたときは、導電層のマイグレーションが
生じないことを見出した。
As a result of intensive studies to achieve the above object, the present inventor has found that when the conductive layer in a ceramic oscillation element is a double layer of chromium-gold or nickel-chromium alloy-gold. Found that migration of the conductive layer did not occur.

【0009】即ち、本発明は、圧電セラミック素体の上
面及び下面に導電層を形成してなるセラミック発振素子
であって、上記導電層がクロム−金又はニッケル−クロ
ム合金−金の二層からなることを特徴とするセラミック
発振素子に係るものである。
That is, the present invention is a ceramic oscillating device having a conductive layer formed on the upper surface and the lower surface of a piezoelectric ceramic body, wherein the conductive layer comprises two layers of chromium-gold or nickel-chromium alloy-gold. The present invention relates to a ceramic oscillating device.

【0010】また、本発明は、圧電セラミック素体の上
面及び下面に導電層を形成してなるセラミック発振素子
であって、上記導電層がクロム−ニッケル−金の三層か
らなることを特徴とするセラミック発振素子に係るもの
である。
Further, according to the present invention, there is provided a ceramic oscillating device comprising a piezoelectric ceramic body and conductive layers formed on the upper and lower surfaces thereof, wherein the conductive layer comprises three layers of chromium-nickel-gold. The present invention relates to a ceramic oscillation element.

【0011】更に、本発明は、上記セラミック発振素子
を用いた圧電発振子をも包含する。
Further, the present invention also includes a piezoelectric oscillator using the above ceramic oscillator.

【0012】[0012]

【作用】圧電セラミック素体上にクロム層又はニッケル
−クロム合金層を介して金層を形成して導電層を設ける
ので、該導電層の成分の圧電セラミック素体中へのマイ
グレーションが生じることを略解消し得る。
Since the gold layer is formed on the piezoelectric ceramic body through the chromium layer or the nickel-chromium alloy layer to provide the conductive layer, migration of the components of the conductive layer into the piezoelectric ceramic body is prevented. It can be resolved.

【0013】また、導電層の表層となる金は、極めて安
定な物質であるので酸化され難く、導通不良による特性
劣化等を防ぐことができる。
Further, gold, which is the surface layer of the conductive layer, is an extremely stable substance and is therefore unlikely to be oxidized, so that it is possible to prevent characteristic deterioration due to poor conduction.

【0014】更に、導電層をクロム−ニッケル−金の三
層で構成したときは、ニッケルがクロムと金との接合力
をより強いものとし得、しかも金中へのクロムの拡散を
防止し得るので、更に好ましいものとなる。
Further, when the conductive layer is composed of three layers of chromium-nickel-gold, nickel can enhance the bonding force between chromium and gold, and can prevent the diffusion of chromium into gold. Therefore, it is more preferable.

【0015】[0015]

【実施例】以下、実施例を示し本発明の特徴とするとこ
ろをより詳細に説明するが、本発明がこれら実施例に限
定されることはない。
EXAMPLES Hereinafter, the features of the present invention will be described in more detail with reference to examples, but the present invention is not limited to these examples.

【0016】本発明の第1の実施例に係るセラミック発
振素子の平面図及び断面図を図1及び図2に示す。第1
の実施例におけるセラミック発振素子1は、板状の圧電
セラミック素体2(例えば厚み200〜500μm程
度)の上面に、その一方の端部から中央部に亘って、ク
ロム層3a(例えば層厚み0.3μm程度)及び金層3
b(例えば層厚み0.3μm程度)の二層からなる導電
層3が設けられ、上記圧電セラミック素体2の下面に
は、上記導電層3と同様にしてクロム層4a及び金層4
bの二層からなる導電層4が、圧電セラミック素体2の
もう一方の端部から中央部に亘り、且つ上面に設けられ
た導電層3と圧電セラミック素体2の中央部上下面にお
いて一部が平面視重合するように設けられてなる。
1 and 2 are a plan view and a sectional view of a ceramic oscillating device according to a first embodiment of the present invention. First
The ceramic oscillating device 1 according to the embodiment of the present invention has a chrome layer 3a (for example, a layer thickness 0 .3 μm) and gold layer 3
b (for example, a layer thickness of about 0.3 μm) is provided as two conductive layers 3, and a chromium layer 4 a and a gold layer 4 are provided on the lower surface of the piezoelectric ceramic element body 2 in the same manner as the conductive layer 3.
The conductive layer 4 consisting of two layers of b extends from the other end of the piezoelectric ceramic element body 2 to the central portion thereof, and is formed on the upper surface and the conductive layer 3 provided on the upper surface of the piezoelectric ceramic element body 2 at the central portion. The parts are provided so as to overlap each other in a plan view.

【0017】上記第1の実施例において、導電層3,4
のクロム層3a,4aに代えてニッケル−クロム合金層
を用いても同様の効果を得ることができる。
In the first embodiment, the conductive layers 3 and 4 are used.
Similar effects can be obtained by using nickel-chromium alloy layers instead of the chromium layers 3a and 4a.

【0018】次ぎに、本発明の第2の実施例に係るセラ
ミック発振素子の断面図を図3に示す。第2の実施例に
おいて、セラミック発振素子5は、上記第1の実施例に
おけるセラミック発振素子1の上下面の導電層3,4を
クロム層6a(例えば層厚み0.15μm程度)、ニッ
ケル層6b(例えば層厚み0.15μm程度)及び金層
6c(例えば層厚み0.3μm程度)の三層構造からな
る導電層6に代えたものである。
Next, FIG. 3 shows a sectional view of a ceramic oscillating device according to a second embodiment of the present invention. In the second embodiment, the ceramic oscillating device 5 includes the conductive layers 3 and 4 on the upper and lower surfaces of the ceramic oscillating device 1 of the first embodiment, a chromium layer 6a (for example, a layer thickness of about 0.15 μm), and a nickel layer 6b. (For example, the layer thickness is about 0.15 μm) and the gold layer 6c (for example, the layer thickness is about 0.3 μm) is replaced with the conductive layer 6 having a three-layer structure.

【0019】これらセラミック発振素子1,5は、次の
ようにして製造することができる。先ず、所定寸法に分
割されて複数の圧電セラミック素体2が形成されるセラ
ミック基板の上面及び下面に、導電層3,4,6の各層
をスパッタリング法、蒸着法等により形成し、エッチン
グ処理して所定のパターンとする。上記エッチング処理
において用いられるエッチング液としては、クロム層又
はニッケル層の場合、例えば硝酸第2セリウムアンモニ
ウム水溶液等が、金層の場合、例えばKCN水溶液等を
挙げることができる。次に、これを所定寸法に分割して
個々のセラミック発振素子とされる。
These ceramic oscillators 1 and 5 can be manufactured as follows. First, conductive layers 3, 4 and 6 are formed on the upper and lower surfaces of a ceramic substrate divided into a predetermined size to form a plurality of piezoelectric ceramic elements 2 by a sputtering method, a vapor deposition method or the like, and an etching process is performed. To a predetermined pattern. Examples of the etchant used in the above etching treatment include a cerium ammonium nitrate aqueous solution in the case of a chromium layer or a nickel layer, and a KCN aqueous solution in the case of a gold layer. Next, this is divided into a predetermined size to obtain individual ceramic oscillation elements.

【0020】次に、上記第1及び第2の実施例のセラミ
ック発振素子1,5を従来のセラミック発振素子と比較
するために、導電層に銀層を用いた第1の比較例及び銅
−銀の二層を用いた第2の比較例を用いて、温度121
℃、湿度100%、気圧2atmの条件下において直流
5Vを印加して240時間後のマイグレーションの発生
率を比較した。尚、サンプル数は各々15とした。その
結果、マイグレーションが発生した個数は、第1及び第
2の実施例で0(発生率0%)、第1の比較例で9(発
生率60%)、第2の比較例で15(発生率100%)
であった。
Next, in order to compare the ceramic oscillating devices 1 and 5 of the first and second embodiments with a conventional ceramic oscillating device, a first comparative example using a silver layer as a conductive layer and a copper- Using the second comparative example with two layers of silver, a temperature of 121
A DC 5 V was applied under the conditions of ° C, humidity 100%, and atmospheric pressure 2 atm, and migration rates after 240 hours were compared. The number of samples was 15, respectively. As a result, the number of migration occurrences was 0 (occurrence rate 0%) in the first and second examples, 9 (occurrence rate 60%) in the first comparative example, and 15 (occurrence rate in the second comparative example). Rate 100%)
Met.

【0021】上記の結果より、本実施例のセラミック発
振素子が従来のものに比して極めて優れたものであるこ
とが判る。
From the above results, it can be seen that the ceramic oscillating device of this embodiment is extremely superior to the conventional one.

【0022】斯くしてなる上記第1及び第2の実施例の
セラミック発振素子1,5は、例えば前記図4に示した
ような構造に組み立てられ圧電発振子とされる。
The ceramic oscillating elements 1 and 5 of the first and second embodiments thus constructed are assembled into a piezoelectric oscillator having the structure shown in FIG. 4, for example.

【0023】[0023]

【発明の効果】本発明のセラミック発振素子は、導電層
がマイグレーションを起こさず、しかも酸化し難いもの
である。従って、このセラミック発振素子を用いた本発
明の圧電発振子は、従来の圧電発振子に比して、セラミ
ック発振素子における導電層のショート不良、オープン
不良等による発振停止、及び特性劣化の生じ難い極めて
信頼性及び耐環境性に優れたものである。
According to the ceramic oscillating device of the present invention, the conductive layer does not cause migration and is hard to oxidize. Therefore, the piezoelectric oscillator of the present invention using this ceramic oscillating element is less likely to cause oscillation stoppage and characteristic deterioration due to short-circuit defects, open defects, etc. of the conductive layer in the ceramic oscillating device, as compared with the conventional piezoelectric oscillator. It has excellent reliability and environmental resistance.

【図面の簡単な説明】[Brief description of drawings]

【図1】第1の実施例におけるセラミック発振素子を示
す平面図である。
FIG. 1 is a plan view showing a ceramic oscillator according to a first embodiment.

【図2】図1におけるI−I断面図である。FIG. 2 is a sectional view taken along line I-I in FIG.

【図3】第2の実施例におけるセラミック発振素子を示
す断面図である。
FIG. 3 is a cross-sectional view showing a ceramic oscillator according to a second embodiment.

【図4】圧電発振子の構造を示す断面図である。FIG. 4 is a cross-sectional view showing the structure of a piezoelectric oscillator.

【図5】従来のセラミック発振素子を示す平面図であ
る。
FIG. 5 is a plan view showing a conventional ceramic oscillator.

【図6】図5におけるII−II断面図である。6 is a sectional view taken along line II-II in FIG.

【符号の説明】[Explanation of symbols]

1,5 セラミック発振素子 2 圧電セラミック素体 3,4,6 導電層 3a,4a,6a クロム層 3b,4b,6c 金層 6b ニッケル層 1,5 Ceramic oscillation element 2 Piezoelectric ceramic element body 3,4,6 Conductive layer 3a, 4a, 6a Chromium layer 3b, 4b, 6c Gold layer 6b Nickel layer

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 圧電セラミック素体の上面及び下面に導
電層を形成してなるセラミック発振素子であって、上記
導電層がクロム−金又はニッケル−クロム合金−金の二
層からなることを特徴とするセラミック発振素子。
1. A ceramic oscillating device comprising a piezoelectric ceramic body having conductive layers formed on an upper surface and a lower surface thereof, wherein the conductive layer comprises two layers of chromium-gold or nickel-chromium alloy-gold. And a ceramic oscillator.
【請求項2】 圧電セラミック素体の上面及び下面に導
電層を形成してなるセラミック発振素子であって、上記
導電層がクロム−ニッケル−金の三層からなることを特
徴とするセラミック発振素子。
2. A ceramic oscillation element comprising a piezoelectric ceramic body and conductive layers formed on the upper and lower surfaces thereof, wherein the conductive layer comprises three layers of chromium-nickel-gold. .
【請求項3】 請求項1又は2に記載のセラミック発振
素子を用いた圧電発振子。
3. A piezoelectric oscillator using the ceramic oscillator according to claim 1.
JP5189234A 1993-06-30 1993-06-30 Ceramic oscillation element and piezoelectric oscillator using the same Pending JPH0722894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5189234A JPH0722894A (en) 1993-06-30 1993-06-30 Ceramic oscillation element and piezoelectric oscillator using the same

Publications (1)

Publication Number Publication Date
JPH0722894A true JPH0722894A (en) 1995-01-24

Family

ID=16237852

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JPH0722894A (en)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5390793A (en) * 1977-01-19 1978-08-09 Matsushita Electric Ind Co Ltd Piezoelectric vibrator
JPS54132187A (en) * 1978-04-06 1979-10-13 Seiko Instr & Electronics Ltd Crystal oscillator
JPS5753124A (en) * 1980-09-17 1982-03-30 Seiko Instr & Electronics Ltd Crystal resonator unit and its production
JPS5793715A (en) * 1980-12-02 1982-06-10 Seiko Instr & Electronics Ltd Electrode construction of piezoelectric oscillator
JPS5824503Y2 (en) * 1976-04-02 1983-05-26 セイコーインスツルメンツ株式会社 Width-slip crystal oscillator
JPS58190112A (en) * 1982-04-28 1983-11-07 Fujitsu Ltd Adjusting method of resonance frequency of oscillating element
JPH0241510U (en) * 1988-09-12 1990-03-22
JPH02274113A (en) * 1989-04-17 1990-11-08 Nec Corp Crystal resonator
JPH0389615A (en) * 1989-08-31 1991-04-15 Kinseki Ltd Electrode structure for piezoelectric resonator
JPH0437210A (en) * 1990-05-31 1992-02-07 Kinseki Ltd Electrode structure of piezoelectric vibrator

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5824503Y2 (en) * 1976-04-02 1983-05-26 セイコーインスツルメンツ株式会社 Width-slip crystal oscillator
JPS5390793A (en) * 1977-01-19 1978-08-09 Matsushita Electric Ind Co Ltd Piezoelectric vibrator
JPS54132187A (en) * 1978-04-06 1979-10-13 Seiko Instr & Electronics Ltd Crystal oscillator
JPS5753124A (en) * 1980-09-17 1982-03-30 Seiko Instr & Electronics Ltd Crystal resonator unit and its production
JPS5793715A (en) * 1980-12-02 1982-06-10 Seiko Instr & Electronics Ltd Electrode construction of piezoelectric oscillator
JPS58190112A (en) * 1982-04-28 1983-11-07 Fujitsu Ltd Adjusting method of resonance frequency of oscillating element
JPH0241510U (en) * 1988-09-12 1990-03-22
JPH02274113A (en) * 1989-04-17 1990-11-08 Nec Corp Crystal resonator
JPH0389615A (en) * 1989-08-31 1991-04-15 Kinseki Ltd Electrode structure for piezoelectric resonator
JPH0437210A (en) * 1990-05-31 1992-02-07 Kinseki Ltd Electrode structure of piezoelectric vibrator

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