JPH02274113A - Crystal resonator - Google Patents
Crystal resonatorInfo
- Publication number
- JPH02274113A JPH02274113A JP9796589A JP9796589A JPH02274113A JP H02274113 A JPH02274113 A JP H02274113A JP 9796589 A JP9796589 A JP 9796589A JP 9796589 A JP9796589 A JP 9796589A JP H02274113 A JPH02274113 A JP H02274113A
- Authority
- JP
- Japan
- Prior art keywords
- solder
- layer
- thin film
- lead wire
- film electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 24
- 229910000679 solder Inorganic materials 0.000 claims abstract description 35
- 239000010409 thin film Substances 0.000 claims abstract description 16
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 11
- 238000009792 diffusion process Methods 0.000 claims abstract description 8
- 239000000126 substance Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 3
- 229910045601 alloy Inorganic materials 0.000 abstract description 2
- 239000000956 alloy Substances 0.000 abstract description 2
- 229910020220 Pb—Sn Inorganic materials 0.000 abstract 2
- 230000007797 corrosion Effects 0.000 abstract 2
- 238000005260 corrosion Methods 0.000 abstract 2
- 230000010355 oscillation Effects 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、水晶振動子に関し、特に水晶振動子の電極構
造に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a crystal resonator, and particularly to an electrode structure of a crystal resonator.
従来の水晶振動子の構造を第３図に示す。第３図におい
て、水晶の結晶から一定の方位に切り出した水晶片１の
上下面に例えば銀（Ａｇ）の蒸着により形成されてなる
導体薄膜電極２−１゜２−２が形成されている。各導体
薄膜電極の端部には、それぞれリード線３−１．３−２
が接合はんだ４−１．４−２により固着されている。The structure of a conventional crystal resonator is shown in FIG. In FIG. 3, conductive thin film electrodes 2-1 and 2-2 formed by vapor deposition of silver (Ag), for example, are formed on the upper and lower surfaces of a crystal piece 1 cut in a fixed direction from a quartz crystal. Lead wires 3-1, 3-2 are attached to the ends of each conductive thin film electrode.
are fixed by bonding solder 4-1, 4-2.
上述した従来の水晶振動子の構造では以下に述べる問題
点がある。即ち、Ａｇの蒸着膜のような−様な薄膜から
なる導体薄膜電極の端部にリード線が接合はんだにより
固着されている構造になっているために水晶振動子に熱
が加わる場合、接合はんだが周囲の導体薄膜電極へ拡散
する。いわゆるはんだくわれを生じやすいという欠点が
ある。The structure of the conventional crystal resonator described above has the following problems. In other words, if heat is applied to the crystal resonator due to the structure in which the lead wire is fixed to the end of the conductor thin film electrode made of a -like thin film such as a vapor-deposited Ag film, the bonding solder diffuses into the surrounding conductive thin film electrodes. There is a drawback that so-called solder creases are likely to occur.
従来の水晶振動子の高温保管試験による外観の変化を第
４図に示す。第４図（ａ＞は初期状態を示す平面図、第
４図（ｂ）は８５°Ｃ５５００時間後の状態を示す平面
図、第４図（Ｃ）は１２５℃、１０００時間後の状態を
示す平面図であり、高温保管試験により、はんだくわれ
部５が広がりている。また水晶振動子の主要特性である
発振周波数についてもはんだくわれの進行に対応してず
れを生じるため、従来の水晶振動子の高温保管試験の信
頼度保証は８５℃、５００時間程度のものであった。Figure 4 shows changes in the appearance of a conventional crystal resonator due to high-temperature storage tests. Fig. 4 (a) is a plan view showing the initial state, Fig. 4 (b) is a plan view showing the state after 5500 hours at 85°C, and Fig. 4 (C) shows the state after 1000 hours at 125°C. This is a plan view, and the solder crease 5 has expanded due to the high-temperature storage test.Also, the oscillation frequency, which is the main characteristic of a crystal resonator, also shifts as the solder crease progresses. The reliability of the high-temperature storage test for the vibrator was guaranteed at 85° C. for about 500 hours.
本発明の水晶振動子は、水晶片の所定箇所に設けられた
導体薄膜電極上にはんだで接合されたリード線を有する
水晶振動子において、前記導体薄膜電極は前記はんだ接
合部で多層構造を有し、前記はんだ接合部の周囲には前
記接合用のはんだに濡れず上層のものより前記はんだの
成分の拡散係数の小さい物質が露出しているというもの
である。The crystal resonator of the present invention is a crystal resonator having a lead wire soldered onto a conductive thin film electrode provided at a predetermined location of a crystal piece, wherein the conductive thin film electrode has a multilayer structure at the solder joint. However, around the solder joint, a substance that does not get wet with the joining solder and has a smaller diffusion coefficient of the solder components than the upper layer is exposed.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
第１図は本発明の実施例１の断面図である。FIG. 1 is a sectional view of Embodiment 1 of the present invention.
水晶片１１の上下面にそれぞれＣｒ層１２ａおよびＡｕ
層１２ｂからなる導体薄膜電極１２が形成されており、
その端部には、リード線１３がＰｂ−３ｎ合金からなる
接合はんだ１４によって固着されている。また導体薄膜
電極１２において、Ａｕ層１２ｂは、リード線１３を固
着する部分に近接する領域りにおいてのみ選択的に除去
されている。A Cr layer 12a and an Au layer are formed on the upper and lower surfaces of the crystal piece 11, respectively.
A conductive thin film electrode 12 consisting of a layer 12b is formed,
A lead wire 13 is fixed to the end thereof with a joining solder 14 made of a Pb-3n alloy. Further, in the conductive thin film electrode 12, the Au layer 12b is selectively removed only in the region close to the portion to which the lead wire 13 is fixed.
上述の水晶振動子について８５℃、５００時間及び１２
５℃、１０００時間の高温保管試験を行ったところ、は
んだくわれの進行は領域りの手前でスｌ〜ツブした。つ
まり、領域りにおいてはＰｂ−３ｎはんだに対して濡れ
を生じないＣｒ層１２ａが露出しているためにはんだの
拡散が起こらず、その結果、はんだくわれも全く生じな
かったのである。従ってはんだくわれの進行に伴う発信
周波数のズレも抑止された結果１２５°Ｃ１１０００時
間の信頼度を保証することが可能になる。85°C, 500 hours and 12
When a high temperature storage test was conducted at 5° C. for 1,000 hours, the progress of solder creases slowed down before reaching the area. In other words, since the Cr layer 12a, which does not wet the Pb-3n solder, is exposed in the area, no solder diffusion occurs, and as a result, no solder crease occurs at all. Therefore, deviations in the oscillation frequency due to the progress of solder creases are also suppressed, making it possible to guarantee reliability for 11,000 hours at 125°C.
第２図は本発明の実施例２の断面図である。FIG. 2 is a sectional view of Example 2 of the present invention.
本実施例では、Ｔｉｉ層２ａおよびＡｕ層２２ｂからな
る導体薄膜電極２２が形成されており、Ａｕ層２２ｂは
、リード線１３を固着する部分以外の領域からは選択的
に除去されている。In this embodiment, a conductive thin film electrode 22 is formed of a Tii layer 2a and an Au layer 22b, and the Au layer 22b is selectively removed from the region other than the portion to which the lead wire 13 is fixed.
上述の水晶振動子についても高温保管試験に関し、１２
５°Ｃ１１０００時間の信頼度を保証することができる
。実施例１ではリード線のはんだづけ作業で接合はんだ
が領域りをまたいでＡｕ層に付着する恐れがあるが、実
施例２ではその恐れがなく生業性がよい利点がある。12 regarding the high temperature storage test for the above-mentioned crystal unit.
Reliability can be guaranteed for 11,000 hours at 5°C. In Embodiment 1, there is a risk that the joining solder may adhere to the Au layer across the area during the soldering work of the lead wires, but in Embodiment 2, there is no such risk and there is an advantage of good productivity.
以上の実施例において、Ｃｒ層やＴｉ層ははんだに濡れ
ないばかりでなく、はんだの成分であるｐｂやＳｎの拡
散係数がＡｕ層より小さく、はんだ拡散のバリヤ層の役
割をはたしているため、はんだくわれが防止される。In the above embodiments, the Cr layer and Ti layer not only do not get wet with solder, but also have a smaller diffusion coefficient of solder components such as PB and Sn than the Au layer, and therefore serve as a barrier layer for solder diffusion. Curling is prevented.
以上説明したように本発明の水晶振動子は、リード線と
導体薄膜電極のはんだ接合部の周囲にはんだに濡れずは
んだの成分の拡散係数の小さい物質が露出しているので
、従来の水晶振動子の欠点であった。電極のはんだくわ
れの進行による発振周波数のずれを抑止でき、より耐熱
性の高い水晶振動子を提供することが可能になる効果が
ある。As explained above, the crystal resonator of the present invention has a substance exposed around the solder joint between the lead wire and the conductive thin film electrode that does not get wet with solder and has a small diffusion coefficient of the solder components. It was a child's fault. This has the effect of suppressing the deviation of the oscillation frequency due to the progress of solder creases in the electrodes, and making it possible to provide a crystal resonator with higher heat resistance.
第１図は本発明の実施例１の断面図、第２図は本発明の
実施例２の断面図、第３図は従来の水晶振動子の構造を
示す側面図、第４図（ａ）〜（Ｃ）は従来の水晶振動子
の高温保管試験による外観の変化を示す平面図である。
１．１１．２１・・・水晶片、２．２’−１，２２，１
２，２２・・・導体薄膜電極、１２ａ・・・Ｃｒ層、１
２ｂ、２２ｂ−＝Ａｕ層、２２ ａ−Ｔ ｉ層、３．３
−１．３−２．１３．２３・・・リード線、４．１４．
２４・・・接合はんだ、５，５′・・・はんだくわれ。Fig. 1 is a sectional view of Embodiment 1 of the present invention, Fig. 2 is a sectional view of Embodiment 2 of the invention, Fig. 3 is a side view showing the structure of a conventional crystal resonator, and Fig. 4(a). -(C) are plan views showing changes in appearance of conventional crystal resonators due to high temperature storage tests. 1.11.21...Crystal piece, 2.2'-1,22,1
2, 22... Conductor thin film electrode, 12a... Cr layer, 1
2b, 22b-=Au layer, 22 a-Ti layer, 3.3
-1.3-2.13.23... Lead wire, 4.14.
24...Joining solder, 5,5'...Solder hoop.
Claims (1)
だで接合されたリード線を有する水晶振動子において、
前記導体薄膜電極は前記はんだ接合部で多層構造を有し
、前記はんだ接合部の周囲には前記接合用のはんだに濡
れず上層のものより前記はんだの成分の拡散係数の小さ
い物質が露出していることを特徴とする水晶振動子。In a crystal resonator having a lead wire soldered onto a conductive thin film electrode provided at a predetermined location of a crystal piece,
The conductive thin film electrode has a multilayer structure at the solder joint, and a substance that does not get wet with the joining solder and has a smaller diffusion coefficient of the solder components than that of the upper layer is exposed around the solder joint. A crystal oscillator characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9796589A JPH02274113A (en) | 1989-04-17 | 1989-04-17 | Crystal resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9796589A JPH02274113A (en) | 1989-04-17 | 1989-04-17 | Crystal resonator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02274113A true JPH02274113A (en) | 1990-11-08 |
Family
ID=14206385
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9796589A Pending JPH02274113A (en) | 1989-04-17 | 1989-04-17 | Crystal resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02274113A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06318741A (en) * | 1992-03-09 | 1994-11-15 | Kyocera Corp | Wiring board |
| JPH0722894A (en) * | 1993-06-30 | 1995-01-24 | Rohm Co Ltd | Ceramic oscillation element and piezoelectric oscillator using the same |
-
1989
- 1989-04-17 JP JP9796589A patent/JPH02274113A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06318741A (en) * | 1992-03-09 | 1994-11-15 | Kyocera Corp | Wiring board |
| JPH0722894A (en) * | 1993-06-30 | 1995-01-24 | Rohm Co Ltd | Ceramic oscillation element and piezoelectric oscillator using the same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20020024271A1 (en) | Surface acoustic wave device | |
| US20020056897A1 (en) | Electronic component to be mounted on a circuit board having electronic circuit device sealed therein and method of manufacturing the same | |
| JP2007096899A (en) | Manufacturing method and bonding structure of piezoelectric vibration piece, and piezoelectric device | |
| JP3351402B2 (en) | Electronic element, surface acoustic wave element, mounting method thereof, electronic component or surface acoustic wave device manufacturing method, and surface acoustic wave device | |
| JP3929675B2 (en) | Piezoelectric vibrator | |
| JPH02274113A (en) | Crystal resonator | |
| JP4051452B2 (en) | Piezoelectric vibrator | |
| JPS642288B2 (en) | ||
| JP3911838B2 (en) | Method for manufacturing piezoelectric vibrator | |
| JPS6335099B2 (en) | ||
| JP2001313305A (en) | Electronic component element, electronic component device, and communications equipment device | |
| JPH10335114A (en) | Thermistor | |
| JP3413522B2 (en) | Package for electronic components | |
| JPS59159583A (en) | Semiconductor light emitting device | |
| JPH04186688A (en) | Semiconductor laser | |
| JPH11284485A (en) | Piezoelectric resonator | |
| JPH08298425A (en) | Crystal vibrator | |
| JPH08307192A (en) | Surface acoustic wave device | |
| JPH02168640A (en) | Connection structure between different substrates | |
| JPS62242405A (en) | Composite electronic parts | |
| JP2620243B2 (en) | Resin-sealed semiconductor device | |
| JPS59993A (en) | Method of bonding metal plate electrode | |
| JPH0346809A (en) | Piezoelectric oscillator | |
| JPH0341475Y2 (en) | ||
| JPH0414861Y2 (en) |