JPH07211796A - 半導体装置のキャパシタストレージノード電極及びキャパシタ並にそれらの製造方法 - Google Patents
半導体装置のキャパシタストレージノード電極及びキャパシタ並にそれらの製造方法Info
- Publication number
- JPH07211796A JPH07211796A JP6286443A JP28644394A JPH07211796A JP H07211796 A JPH07211796 A JP H07211796A JP 6286443 A JP6286443 A JP 6286443A JP 28644394 A JP28644394 A JP 28644394A JP H07211796 A JPH07211796 A JP H07211796A
- Authority
- JP
- Japan
- Prior art keywords
- conductive film
- semiconductor device
- capacitor
- storage node
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 74
- 239000003990 capacitor Substances 0.000 title claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000003860 storage Methods 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 42
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- 229910021341 titanium silicide Inorganic materials 0.000 claims abstract description 14
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims abstract description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 8
- 239000010937 tungsten Substances 0.000 claims abstract description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 14
- 239000010936 titanium Substances 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 238000000137 annealing Methods 0.000 claims description 8
- 229910021332 silicide Inorganic materials 0.000 claims description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 238000000206 photolithography Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 23
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 129
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000010410 layer Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- FEWHDZOJQQLPEN-UHFFFAOYSA-N [O].[N].[O] Chemical compound [O].[N].[O] FEWHDZOJQQLPEN-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000002905 metal composite material Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1994-353 | 1994-01-11 | ||
| KR1019940000353A KR0148503B1 (ko) | 1994-01-11 | 1994-01-11 | 반도체 장치의 캐패시터와 그 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07211796A true JPH07211796A (ja) | 1995-08-11 |
Family
ID=19375477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6286443A Pending JPH07211796A (ja) | 1994-01-11 | 1994-11-21 | 半導体装置のキャパシタストレージノード電極及びキャパシタ並にそれらの製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07211796A (de) |
| KR (1) | KR0148503B1 (de) |
| DE (1) | DE4434896B4 (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956595A (en) * | 1996-07-15 | 1999-09-21 | Nec Corporation | Method of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitride |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100943485B1 (ko) * | 2002-12-31 | 2010-02-22 | 동부일렉트로닉스 주식회사 | 반도체소자의 제조방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3930655A1 (de) * | 1988-09-13 | 1990-03-22 | Mitsubishi Electric Corp | Halbleitervorrichtung mit vielschichtig gestapelter verbindungsschicht und verfahren zu deren herstellung |
| JPH03157965A (ja) * | 1989-11-15 | 1991-07-05 | Nec Corp | 半導体装置 |
| US5192703A (en) * | 1991-10-31 | 1993-03-09 | Micron Technology, Inc. | Method of making tungsten contact core stack capacitor |
-
1994
- 1994-01-11 KR KR1019940000353A patent/KR0148503B1/ko not_active IP Right Cessation
- 1994-09-29 DE DE4434896A patent/DE4434896B4/de not_active Expired - Fee Related
- 1994-11-21 JP JP6286443A patent/JPH07211796A/ja active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5956595A (en) * | 1996-07-15 | 1999-09-21 | Nec Corporation | Method of fabricating a semiconductor integrated circuit having a capacitor with lower electrode comprising titanium nitride |
| KR100299602B1 (ko) * | 1996-07-15 | 2001-10-26 | 가네꼬 히사시 | 반도체장치제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR0148503B1 (ko) | 1998-10-15 |
| DE4434896A1 (de) | 1995-07-13 |
| DE4434896B4 (de) | 2006-10-19 |
| KR950024340A (ko) | 1995-08-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20040510 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20040601 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20041109 |