JPH0719142Y2 - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPH0719142Y2
JPH0719142Y2 JP16650085U JP16650085U JPH0719142Y2 JP H0719142 Y2 JPH0719142 Y2 JP H0719142Y2 JP 16650085 U JP16650085 U JP 16650085U JP 16650085 U JP16650085 U JP 16650085U JP H0719142 Y2 JPH0719142 Y2 JP H0719142Y2
Authority
JP
Japan
Prior art keywords
vapor phase
heating coil
phase growth
winding
susceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP16650085U
Other languages
English (en)
Japanese (ja)
Other versions
JPS6276528U (en:Method
Inventor
公弟 岩田
武敏 石川
義教 中川
忠正 古屋
秀雄 西城
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electronics Industry Co Ltd
Shibaura Machine Co Ltd
Original Assignee
Fuji Electronics Industry Co Ltd
Toshiba Machine Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electronics Industry Co Ltd, Toshiba Machine Co Ltd filed Critical Fuji Electronics Industry Co Ltd
Priority to JP16650085U priority Critical patent/JPH0719142Y2/ja
Publication of JPS6276528U publication Critical patent/JPS6276528U/ja
Application granted granted Critical
Publication of JPH0719142Y2 publication Critical patent/JPH0719142Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP16650085U 1985-10-31 1985-10-31 気相成長装置 Expired - Lifetime JPH0719142Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16650085U JPH0719142Y2 (ja) 1985-10-31 1985-10-31 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16650085U JPH0719142Y2 (ja) 1985-10-31 1985-10-31 気相成長装置

Publications (2)

Publication Number Publication Date
JPS6276528U JPS6276528U (en:Method) 1987-05-16
JPH0719142Y2 true JPH0719142Y2 (ja) 1995-05-01

Family

ID=31097535

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16650085U Expired - Lifetime JPH0719142Y2 (ja) 1985-10-31 1985-10-31 気相成長装置

Country Status (1)

Country Link
JP (1) JPH0719142Y2 (en:Method)

Also Published As

Publication number Publication date
JPS6276528U (en:Method) 1987-05-16

Similar Documents

Publication Publication Date Title
JP3165685B2 (ja) 炭化珪素単結晶の昇華成長
JPH05166741A (ja) 熱処理装置用基板支持具
EP0147967B1 (en) Induction heated reactor system for chemical vapor deposition
JPS6312128A (ja) バレル型気相成長装置
KR20050039709A (ko) 물품을 제어가능하게 가열하는 방법 및 유도 가열 장치
JP6584007B2 (ja) 単結晶の製造方法および単結晶製造装置
CN110331439A (zh) 一种用于碳化硅外延的加热装置
EP4549638A1 (en) Apparatus and method for growing high-quality silicon carbide crystals
JPH0719142Y2 (ja) 気相成長装置
CN109280964B (zh) 一种生长碳化硅单晶的热场结构
US3471326A (en) Method and apparatus for epitaxial deposition of semiconductor material
JP3206375B2 (ja) 単結晶薄膜の製造方法
US5238879A (en) Method for the production of polycrystalline layers having granular crystalline structure for thin-film semiconductor components such as solar cells
CN219280098U (zh) 可调节温场的晶体生长装置
CN210765582U (zh) 用于碳化硅外延的加热装置
JP2007180132A (ja) サセプタ及びそのサセプタを用いたｃｖｄ装置
CN114164416A (zh) 加热器
JP2008260665A (ja) 炭化ケイ素単結晶の製造方法および製造装置
JP2013075793A (ja) 単結晶の製造装置、および単結晶の製造方法
JPS58125608A (ja) グラフアイト板の表面に均一なＳｉＣ膜を形成する方法とその装置
US20250347029A1 (en) Managing growth of silicon carbide crystals
CN103614709A (zh) 用于mocvd反应室的组合基座式电磁加热装置
JPH0443878B2 (en:Method)
CN113802107B (zh) 利用pecvd制备石墨烯的装置和方法
JPH0719137Y2 (ja) エピタキシヤル成長用サセプタ