JPH0719142Y2 - 気相成長装置 - Google Patents
気相成長装置Info
- Publication number
- JPH0719142Y2 JPH0719142Y2 JP16650085U JP16650085U JPH0719142Y2 JP H0719142 Y2 JPH0719142 Y2 JP H0719142Y2 JP 16650085 U JP16650085 U JP 16650085U JP 16650085 U JP16650085 U JP 16650085U JP H0719142 Y2 JPH0719142 Y2 JP H0719142Y2
- Authority
- JP
- Japan
- Prior art keywords
- vapor phase
- heating coil
- phase growth
- winding
- susceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001947 vapour-phase growth Methods 0.000 title claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 43
- 238000004804 winding Methods 0.000 claims description 23
- 230000006698 induction Effects 0.000 claims description 21
- 230000001502 supplementing effect Effects 0.000 claims description 2
- 230000005855 radiation Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000010363 phase shift Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16650085U JPH0719142Y2 (ja) | 1985-10-31 | 1985-10-31 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16650085U JPH0719142Y2 (ja) | 1985-10-31 | 1985-10-31 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6276528U JPS6276528U (cg-RX-API-DMAC7.html) | 1987-05-16 |
| JPH0719142Y2 true JPH0719142Y2 (ja) | 1995-05-01 |
Family
ID=31097535
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16650085U Expired - Lifetime JPH0719142Y2 (ja) | 1985-10-31 | 1985-10-31 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0719142Y2 (cg-RX-API-DMAC7.html) |
-
1985
- 1985-10-31 JP JP16650085U patent/JPH0719142Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6276528U (cg-RX-API-DMAC7.html) | 1987-05-16 |
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