JPH07135328A - Photovoltyaic power device - Google Patents
Photovoltyaic power deviceInfo
- Publication number
- JPH07135328A JPH07135328A JP5279792A JP27979293A JPH07135328A JP H07135328 A JPH07135328 A JP H07135328A JP 5279792 A JP5279792 A JP 5279792A JP 27979293 A JP27979293 A JP 27979293A JP H07135328 A JPH07135328 A JP H07135328A
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- substrate
- transparent conductive
- conductive film
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、光起電力装置に関する
ものであり、特に凹凸形状を有する基板上に光電変換層
及び透明導電膜を順次積層し、透明導電膜側から光が入
射するタイプの光起電力装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photovoltaic device, in particular, a type in which a photoelectric conversion layer and a transparent conductive film are sequentially laminated on a substrate having an uneven shape, and light is incident from the transparent conductive film side. Of the photovoltaic device.
【０００２】[0002]
【従来の技術】従来より光起電力装置においては、入射
光を閉じ込め光電変換効率を有効に高めるため、基板や
光電変換層に凹凸形状を形成する、いわゆるテクスチャ
ー構造が採用されている。図４は、このようなテクスチ
ャー構造を有する従来の光起電力装置を示す断面図であ
る。図４を参照して、基板１の表面１ａには凹凸形状が
形成されており、該基板１の表面１ａ上には、裏面電極
となる金属膜２が形成されている。金属膜２上には、ｐ
ｎ接合またはｐｉｎ接合を有するシリコン半導体等から
なる光電変換層３が形成されている。この光電変換層３
上にはインジウム錫酸化物（ＩＴＯ）等からなる透明導
電膜４が形成されている。2. Description of the Related Art Conventionally, a photovoltaic device employs a so-called texture structure in which unevenness is formed on a substrate or a photoelectric conversion layer in order to confine incident light and effectively improve photoelectric conversion efficiency. FIG. 4 is a cross-sectional view showing a conventional photovoltaic device having such a texture structure. Referring to FIG. 4, unevenness is formed on the surface 1a of the substrate 1, and the metal film 2 serving as a back electrode is formed on the surface 1a of the substrate 1. On the metal film 2, p
A photoelectric conversion layer 3 made of a silicon semiconductor or the like having an n junction or a pin junction is formed. This photoelectric conversion layer 3
A transparent conductive film 4 made of indium tin oxide (ITO) or the like is formed thereon.
【０００３】[0003]
【発明が解決しようとする課題】上記のような従来の光
起電力装置において、透明導電膜４の凹部の底部付近で
入射する光、例えば図４に示す入射光Ａは、透明導電膜
４に対しほぼ垂直に入射するので、ほぼまっすぐ光電変
換層３中に入る。これに対して、透明導電膜４の傾斜部
分に入射する光、例えば図４に示す入射光Ｂは、空気と
透明導電膜４間の屈折率の違いにより、界面から遠くな
るように屈折して入射するため、図４に示すような電界
強度の弱い部分６に入射光が集中する傾向にある。この
ような電界強度の弱い部分６が存在することについて
は、コンピュータシュミレーション等によって確認され
ており、また特開平５−２２６６７９号公報等において
もその存在が開示されている。In the conventional photovoltaic device as described above, the light incident near the bottom of the recess of the transparent conductive film 4, for example, the incident light A shown in FIG. Since the light is incident almost vertically, it enters the photoelectric conversion layer 3 almost straight. On the other hand, the light incident on the inclined portion of the transparent conductive film 4, for example, the incident light B shown in FIG. 4, is refracted away from the interface due to the difference in the refractive index between the air and the transparent conductive film 4. Since it is incident, the incident light tends to be concentrated on the portion 6 where the electric field strength is weak as shown in FIG. The existence of such a portion 6 having a weak electric field strength has been confirmed by computer simulation or the like, and its existence is also disclosed in JP-A-5-226679.
【０００４】このように比較的電界強度の弱い部分に吸
収された光より発生した電荷は、効率良く取り出すこと
が困難であり、従って電界強度の弱い部分に光が集中す
ると、光電変換率を高めることができないという問題が
あった。It is difficult to efficiently take out the charges generated by the light absorbed in the portion having the relatively weak electric field strength, and therefore, when the light is concentrated in the portion having the weak electric field strength, the photoelectric conversion rate is increased. There was a problem that I could not.
【０００５】本発明の目的は、このような従来の問題点
を解消し、光電変換層における電界強度の弱い部分に入
射光が集中するのを防止することのできる構造を有する
光起電力装置を提供することにある。An object of the present invention is to solve the above-mentioned conventional problems and to provide a photovoltaic device having a structure capable of preventing incident light from being concentrated on a portion of the photoelectric conversion layer where the electric field strength is weak. To provide.
【０００６】[0006]
【課題を解決するための手段】本発明の光起電力装置
は、表面が凹凸形状を有し、かつ少なくとも表面に導電
層が形成された基板と、基板表面の凹凸形状に沿い基板
上に形成される、半導体接合を有した光電変換層と、光
電変換層表面の凹凸形状に沿い光電変換層上に形成され
る透明導電膜と、透明導電膜より大きい光屈折率を有す
る透光性材料から形成され、透明導電膜表面の少なくと
も凹部の表面上に形成される光誘導層とを備えることを
特徴としている。A photovoltaic device according to the present invention is a substrate having a concavo-convex surface and at least a conductive layer formed on the surface, and a substrate formed along the concavo-convex shape of the substrate surface. A photoelectric conversion layer having a semiconductor junction, a transparent conductive film formed on the photoelectric conversion layer along the uneven shape of the surface of the photoelectric conversion layer, and a translucent material having a light refractive index higher than that of the transparent conductive film. And a light guide layer formed on at least the surface of the concave portion of the transparent conductive film surface.
【０００７】本発明において用いられる基板は、少なく
とも表面に導電層が形成されている。このような基板と
しては、基板全体が金属から形成されたものであっても
よく、この場合導電層は金属基板自体によって構成され
る。また、導電性を有しない基板を用いる場合には、そ
の表面に蒸着法等により金属膜を形成し、これを導電層
としてもよい。The substrate used in the present invention has a conductive layer formed on at least the surface thereof. As such a substrate, the whole substrate may be formed of metal, in which case the conductive layer is formed by the metal substrate itself. When a substrate having no conductivity is used, a metal film may be formed on its surface by a vapor deposition method or the like, and this may be used as a conductive layer.
【０００８】本発明において基板の表面の凹凸形状は特
に限定されるものではないが、通常凹凸形状のピッチす
なわち、水平方向の山と山及び谷と谷の距離は、使用す
る薄膜半導体層の膜厚と同程度のものが用いられる。例
えば、アモルファスシリコン半導体層の場合は、通常１
μｍ程度の膜厚を有するので、凹凸の山と山及び谷と谷
の距離は１μｍ程度である。また凹凸形状の高さ、すな
わち垂直方向の山と谷の間の距離についても同様であ
る。In the present invention, the uneven shape of the surface of the substrate is not particularly limited, but the pitch of the uneven shape, that is, the distance between peaks and peaks and valleys in the horizontal direction is usually the film of the thin film semiconductor layer to be used. The same thickness is used. For example, in the case of an amorphous silicon semiconductor layer, it is usually 1
Since it has a film thickness of about μm, the distance between the peaks and valleys and the valleys and valleys of the unevenness is about 1 μm. The same applies to the height of the uneven shape, that is, the distance between the vertical peaks and troughs.
【０００９】また、本発明において光電変換層を形成す
る半導体の種類は、特に限定されるものではく、シリコ
ン、ゲルマニウム、シリコンカーボン、シリコンゲルマ
ニウム等の半導体から形成される。また、これらの半導
体の複数種類を組み合わせて積層させてもよい。また、
光電変換層における光活性層は非晶質半導体膜であって
もよいし、多結晶、または単結晶半導体であってもよ
い。In the present invention, the type of semiconductor forming the photoelectric conversion layer is not particularly limited, and is formed of a semiconductor such as silicon, germanium, silicon carbon or silicon germanium. Further, a plurality of types of these semiconductors may be combined and laminated. Also,
The photoactive layer in the photoelectric conversion layer may be an amorphous semiconductor film, a polycrystal, or a single crystal semiconductor.
【００１０】[0010]
【作用】本発明に従えば、透明導電膜より大きい光屈折
率を有する透光性材料から形成された光誘導層が、透明
導電膜表面の少なくとも凹部の表面上に形成される。図
３は、この透明導電膜４の凹部の部分を埋めるように光
誘導層５が形成された実施例を示す断面図である。透明
導電膜４の凹部の底付近を入射する光Ａは、図４に示す
従来の場合と同様に、ほぼ垂直に入射し、ほぼまっすぐ
光電変換層３中に入る。これに対し、凹部の斜面に入手
する光Ｂは、透明導電膜４に入射する際、光誘導層５の
屈折率が透明導電膜４の屈折率よりも大きいため、より
界面に近づくように屈折する。このため、図３に示され
るように、電界強度の弱い部分６から離れる方向に入射
する。本発明では、このように透明導電膜４の凹部の表
面上に屈折率の大きい光誘導層５が形成されているの
で、電界強度の弱い部分６に光が集中することがなく、
比較的電界強度の強い部分に光を分布させ、光生成キャ
リアを有効に収集することが可能となる。According to the present invention, the light guide layer made of a light transmissive material having a light refractive index higher than that of the transparent conductive film is formed on at least the surface of the concave portion of the surface of the transparent conductive film. FIG. 3 is a cross-sectional view showing an embodiment in which the light guide layer 5 is formed so as to fill the concave portion of the transparent conductive film 4. The light A incident near the bottom of the concave portion of the transparent conductive film 4 is incident almost vertically and enters the photoelectric conversion layer 3 almost straight, as in the conventional case shown in FIG. On the other hand, the light B obtained on the slope of the concave portion is refracted so that the light guide layer 5 has a refractive index larger than that of the transparent conductive film 4 when entering the transparent conductive film 4, so that the light B approaches the interface. To do. Therefore, as shown in FIG. 3, the light is incident in a direction away from the portion 6 where the electric field strength is weak. In the present invention, since the light guide layer 5 having a large refractive index is formed on the surface of the concave portion of the transparent conductive film 4 in this manner, light is not concentrated on the portion 6 where the electric field strength is weak,
It is possible to distribute the light to a portion where the electric field strength is relatively high and to effectively collect the photo-generated carriers.
【００１１】[0011]
【実施例】図１は、本発明に従う一実施例の光起電力装
置を示す断面図である。図１を参照して、アルミナ等か
らなる絶縁性基板１の表面１ａには、凹凸形状が付与さ
れている。水平方向の凹凸の間隔、すなわち山と山及び
谷と谷との間隔は約１μｍのピッチで形成されており、
垂直方向の山と谷の高さは１μｍとなるように形成され
ている。基板１の表面１ａ上には、真空蒸着法等によ
り、Ａｇからなる金属膜２（膜厚３０００Å）が基板１
の表面１ａの凹凸に沿うように形成されている。金属膜
２上には光電変換層３が形成されている。光電変換層３
は、プラズマＣＶＤ法により、ｎ型水素化非晶質シリコ
ン膜３１（膜厚２００Å）、ｉ型水素化非晶質シリコン
膜３２（膜厚１μｍ）、及びｐ型水素化非晶質シリコン
カーボン膜３３（膜厚２００Å）を順次積層することに
より形成されている。光電変換層３上には、スパッタ蒸
着法により透明導電膜４として酸化インジウム錫膜（膜
厚５０００Å）が形成されている。酸化インジウム錫膜
は、光の波長領域３００ｎｍ〜１０００ｎｍにおいて屈
折率約２．０を示す物質である。透明導電膜４の凹部を
埋めるように酸化チタニウム（ＴｉＯ2 ）からなる光誘
導層５が形成されている。この酸化チタニウムは光の波
長領域３００ｎｍ〜１０００ｎｍにおいて屈折率２．５
〜２．８を示す物質である。このような光誘導層５は酸
化チタニウムを含む溶液を透明導電膜４上に塗布するこ
とにより形成することができる。塗布は、例えば酸化チ
タニウムを含む溶液中に上記各層を積層形成した基板を
浸漬するか、あるいは透明導電膜４上に酸化チタニウム
を含む溶液を付着させ後、過剰の溶液をスピナー等によ
り除去することによって行うことができる。このような
塗布後、１５０℃以下の温度、例えば１２０℃で酸化チ
タニウムが固化するまで焼成し、光誘導層５を形成させ
る。1 is a sectional view showing a photovoltaic device according to an embodiment of the present invention. With reference to FIG. 1, a surface 1a of an insulating substrate 1 made of alumina or the like is provided with an uneven shape. The distance between the unevenness in the horizontal direction, that is, the distance between peaks and valleys and valleys is formed at a pitch of about 1 μm.
The height of the vertical peaks and valleys is 1 μm. On the surface 1a of the substrate 1, a metal film 2 made of Ag (thickness 3000 Å) is formed on the surface 1a of the substrate 1 by a vacuum deposition method or the like.
Is formed so as to follow the unevenness of the surface 1a. The photoelectric conversion layer 3 is formed on the metal film 2. Photoelectric conversion layer 3
Is an n-type hydrogenated amorphous silicon film 31 (film thickness 200Å), an i-type hydrogenated amorphous silicon film 32 (film thickness 1 μm), and a p-type hydrogenated amorphous silicon carbon film by the plasma CVD method. It is formed by sequentially stacking 33 (film thickness 200Å). On the photoelectric conversion layer 3, an indium tin oxide film (film thickness 5000Å) is formed as the transparent conductive film 4 by the sputter deposition method. The indium tin oxide film is a substance having a refractive index of about 2.0 in the wavelength region of light of 300 nm to 1000 nm. A light guide layer 5 made of titanium oxide (TiO 2 ) is formed so as to fill the concave portion of the transparent conductive film 4. This titanium oxide has a refractive index of 2.5 in the light wavelength range of 300 nm to 1000 nm.
It is a substance showing ˜2.8. Such a light guide layer 5 can be formed by applying a solution containing titanium oxide on the transparent conductive film 4. For coating, for example, the substrate on which the above layers are laminated is immersed in a solution containing titanium oxide, or the solution containing titanium oxide is attached onto the transparent conductive film 4, and then the excess solution is removed by a spinner or the like. Can be done by After such coating, baking is performed at a temperature of 150 ° C. or lower, for example, 120 ° C. until the titanium oxide is solidified to form the light guide layer 5.
【００１２】図１に示すような構造の光起電力素子の特
性を測定し、その結果を表１に示した。また、比較とし
て、光誘導層５を有しない以外は図１に示す実施例と同
様の光起電力装置を作製し、この光起電力装置について
もその特性を測定し、その結果を表１に示した。The characteristics of the photovoltaic device having the structure shown in FIG. 1 were measured, and the results are shown in Table 1. Further, as a comparison, a photovoltaic device similar to that of the example shown in FIG. 1 except that the photovoltaic layer 5 was not provided was manufactured, and the characteristics of this photovoltaic device were measured, and the results are shown in Table 1. Indicated.
【００１３】[0013]
【表１】 [Table 1]
【００１４】表１から明らかなように、本発明に従う実
施例の光起電力装置は、比較例の光起電力装置に比べ、
短絡電流及びフィルファクターにおいて改善されてお
り、良好な特性を示している。As is clear from Table 1, the photovoltaic device of the embodiment according to the present invention is
The short-circuit current and fill factor are improved, and good characteristics are shown.
【００１５】図２は、本発明に従う他の実施例の光起電
力装置を示す断面図である。図２を参照して、本実施例
において基板１は、表面に凹凸形状が加工されたタング
ステン金属基板を用いている。基板１の表面１ａに形成
された凹凸形状の水平方向の間隔、すなわち山と山及び
谷と谷の間隔は約１０μｍであり、垂直方向の高さ、す
なわち山と谷の間の距離は約１０μｍである。基板１の
上に、Ｐドープ（ドープ量１０20ｃｍ-3）非晶質シリコ
ン層（膜厚５０００Å）及びノンドープ非晶質シリコン
層（膜厚１０μｍ）を順に形成させた。非晶質シリコン
層形成後、温度６５０℃で真空中にて１０時間アニール
を行い非晶質シリコン層を多結晶化させて、ｎ+ 型多結
晶シリコン膜６１及びｎ- 型多結晶シリコン膜６２を形
成した。さらにこの上に、非晶質シリコンからなるｉ型
非晶質シリコン膜６３（膜厚５０Å）及びｐ型非晶質シ
リコン膜６４（膜厚１００Å）を順次積層して形成し
た。以上のようにｎ+ 型多結晶シリコン膜６１、ｎ- 型
多結晶シリコン膜６２、ｉ型非晶質シリコン膜６３、及
びｐ型非晶質シリコン膜６４を順次積層して形成するこ
とにより、光電変換層６を基板１の表面１ａ上に設け
た。FIG. 2 is a sectional view showing a photovoltaic device of another embodiment according to the present invention. With reference to FIG. 2, in the present embodiment, the substrate 1 is a tungsten metal substrate having a surface with an uneven shape. The distance between the unevenness formed on the surface 1a of the substrate 1 in the horizontal direction, that is, the distance between the peaks and the valleys and the valleys is about 10 μm, and the height in the vertical direction, that is, the distance between the peaks and the valleys is about 10 μm. Is. A P-doped (doping amount 10 20 cm −3 ) amorphous silicon layer (film thickness 5000 Å) and a non-doped amorphous silicon layer (film thickness 10 μm) were sequentially formed on the substrate 1. After forming the amorphous silicon layer, annealing is performed in vacuum at a temperature of 650 ° C. for 10 hours to polycrystallize the amorphous silicon layer, and the n + type polycrystalline silicon film 61 and the n − type polycrystalline silicon film 62 are formed. Was formed. Further thereon, an i-type amorphous silicon film 63 (film thickness 50Å) and a p-type amorphous silicon film 64 (film thickness 100Å) made of amorphous silicon were sequentially laminated and formed. As described above, by sequentially forming the n + -type polycrystalline silicon film 61, the n − -type polycrystalline silicon film 62, the i-type amorphous silicon film 63, and the p-type amorphous silicon film 64, The photoelectric conversion layer 6 was provided on the surface 1 a of the substrate 1.
【００１６】次に、光電変換層６の上に酸化インジウム
錫からなる透明導電膜４（膜厚３０００Å）を形成し
た。次に、上記実施例と同様にして酸化チタニウム（Ｔ
ｉＯ2）を含む溶液を透明導電膜４上に塗布することに
より、透明導電膜４の凹部を埋めるように光誘導層５を
形成した。Next, a transparent conductive film 4 (thickness 3000 Å) made of indium tin oxide was formed on the photoelectric conversion layer 6. Then, titanium oxide (T
By applying a solution containing iO 2 ) onto the transparent conductive film 4, the light guide layer 5 was formed so as to fill the concave portion of the transparent conductive film 4.
【００１７】図２に示す実施例の光起電力装置は、非晶
質ｐ型シリコン／多結晶ｎ- 型シリコン／多結晶ｎ+ 型
シリコンの構造を有した非晶質／多結晶ヘテロ接合の光
起電力装置であり、この実施例の光起電力装置の特性を
評価し表２に示した。The photovoltaic device of the embodiment shown in FIG. 2 comprises an amorphous / polycrystalline heterojunction having a structure of amorphous p-type silicon / polycrystalline n − type silicon / polycrystalline n + type silicon. This is a photovoltaic device, and the characteristics of the photovoltaic device of this example were evaluated and shown in Table 2.
【００１８】また、比較として、透明導電膜４の凹部を
埋める光誘導層５が形成されていないこと以外は図２に
示す実施例と同様の比較例の光起電力装置を作製し、同
様にして評価し、表２にその結果を示した。Further, as a comparison, a photovoltaic device of a comparative example similar to the example shown in FIG. 2 was prepared except that the light guide layer 5 filling the concave portion of the transparent conductive film 4 was not formed, and similarly. The results are shown in Table 2.
【００１９】[0019]
【表２】 [Table 2]
【００２０】表２から明らかなように、本発明に従う実
施例の光起電力装置では、短絡電流及びフィルファクタ
ーにおいて改善されており、良好な特性を示している。
上記各実施例では、基板の凹凸形状の山と山及び谷と谷
との間隔及び山と谷との高さを約１０μｍ程度としてい
るが、凹凸形状の山と山及び谷と谷との間隔及び山と谷
との高さは、１００μｍ以下であることが好ましい。す
なわち、これらの寸法が１００μｍを超えてあまりに大
き過ぎると、テクスチャー構造による光の有効な散乱の
効果が得られない場合があるからである。As is clear from Table 2, the photovoltaic devices of the examples according to the present invention have improved short-circuit current and fill factor and exhibit good characteristics.
In each of the above embodiments, the distance between the uneven peaks and peaks and the valleys and valleys of the substrate and the height between the peaks and troughs are about 10 μm. The height of the peaks and valleys is preferably 100 μm or less. That is, if these dimensions are too large, exceeding 100 μm, the effect of effective scattering of light by the texture structure may not be obtained.
【００２１】また、上記各実施例においては光電変換層
の膜厚を約１０μｍ程度としているが、光電変換層の膜
厚は、上述のように、基板の凹凸形状の寸法、すなわち
山と山及び谷と谷の距離並びに山と谷の間の高さに対し
ほぼ同程度の厚みであることが好ましい。In each of the above embodiments, the thickness of the photoelectric conversion layer is about 10 μm, but the thickness of the photoelectric conversion layer is, as described above, the dimension of the uneven shape of the substrate, that is, the peaks and peaks. It is preferable that the thickness is approximately the same as the distance between the valleys and the height between the valleys.
【００２２】上記各実施例では、光誘導層の形成方法と
して、透光性材料を含む溶液を塗布し、これを乾燥固化
して形成させているが、従来から知られている化学的気
相成長法、スパッタ蒸着法等の薄膜形成法により形成
し、過剰に付着した膜の上層部等をエッチング等により
除去し、形成させてもよい。In each of the above embodiments, as a method for forming the light guide layer, a solution containing a light transmissive material is applied and dried and solidified to form the light guide layer. It may be formed by a thin film forming method such as a growth method or a sputter deposition method, and the upper layer portion of the excessively adhered film may be removed by etching or the like.
【００２３】[0023]
【発明の効果】本発明に従えば、透明導電膜より大きい
光屈折率を有する透光性材料から形成される光誘導層
が、透明導電膜表面の少なくとも凹部の表面上に設けら
れる。このため、入射光は光誘導層と透明導電膜との界
面において界面に近づくように屈折する。このため、従
来電界強度の弱い部分に集中していた光をそれ以外の領
域に分散させることができ、光生成キャリアを有効に収
集することが可能になる。従って、従来よりも光電変換
効率を著しく向上させることができる。According to the present invention, a light guide layer made of a light-transmitting material having a light refractive index higher than that of the transparent conductive film is provided on at least the surface of the concave portion of the surface of the transparent conductive film. Therefore, the incident light is refracted at the interface between the light guide layer and the transparent conductive film so as to approach the interface. Therefore, it is possible to disperse the light, which was conventionally concentrated on the portion where the electric field strength is weak, to the other regions, and it is possible to effectively collect the photo-generated carriers. Therefore, the photoelectric conversion efficiency can be significantly improved as compared with the conventional case.
【図１】本発明に従う一実施例の光起電力装置を示す断
面図。FIG. 1 is a cross-sectional view showing an embodiment of a photovoltaic device according to the present invention.
【図２】本発明に従う他の実施例の光起電力装置を示す
断面図。FIG. 2 is a sectional view showing a photovoltaic device of another embodiment according to the present invention.
【図３】本発明の作用を説明するための断面図。FIG. 3 is a cross-sectional view for explaining the operation of the present invention.
【図４】従来の光起電力装置を示す断面図。FIG. 4 is a cross-sectional view showing a conventional photovoltaic device.
１…基板 １ａ…基板の表面 ２…金属膜 ３，６…光電変換層 ４…透明導電膜 ５…光誘導層 DESCRIPTION OF SYMBOLS 1 ... Substrate 1a ... Substrate surface 2 ... Metal film 3, 6 ... Photoelectric conversion layer 4 ... Transparent conductive film 5 ... Photoinduction layer
Claims (2)
表面に導電層が形成された基板と、 前記基板表面の凹凸形状に沿い前記基板上に形成され
る、半導体接合を有した光電変換層と、 前記光電変換層表面の凹凸形状に沿い前記光電変換層上
に形成される透明導電膜と、 前記透明導電膜より大きい光屈折率を有する透光性材料
から形成され、前記透明導電膜表面の少なくとも凹部の
表面上に形成される光誘導層とを備える、光起電力装
置。1. A substrate having an uneven surface and a conductive layer formed on at least the surface thereof, and a photoelectric conversion layer having a semiconductor junction formed on the substrate along the uneven shape of the substrate surface. A transparent conductive film formed on the photoelectric conversion layer along the uneven shape of the photoelectric conversion layer surface; and a transparent material having a light refractive index higher than that of the transparent conductive film, and the transparent conductive film surface A photovoltaic device formed on at least the surface of the recess.
り、前記導電層が前記金属基板自体によって構成されて
いる、請求項１の記載の光起電力装置。2. The photovoltaic device according to claim 1, wherein the entire substrate is made of metal, and the conductive layer is constituted by the metal substrate itself.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5279792A JP2892921B2 (en) | 1993-11-09 | 1993-11-09 | Photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5279792A JP2892921B2 (en) | 1993-11-09 | 1993-11-09 | Photovoltaic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07135328A true JPH07135328A (en) | 1995-05-23 |
| JP2892921B2 JP2892921B2 (en) | 1999-05-17 |
Family
ID=17615980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5279792A Expired - Fee Related JP2892921B2 (en) | 1993-11-09 | 1993-11-09 | Photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2892921B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008114685A1 (en) * | 2007-03-14 | 2008-09-25 | Omron Corporation | Method for manufacturing solar cell and solar cell |
| CN109817731A (en) * | 2019-02-02 | 2019-05-28 | 京东方科技集团股份有限公司 | A kind of photodiode and preparation method thereof, electronic equipment |
-
1993
- 1993-11-09 JP JP5279792A patent/JP2892921B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008114685A1 (en) * | 2007-03-14 | 2008-09-25 | Omron Corporation | Method for manufacturing solar cell and solar cell |
| JPWO2008114685A1 (en) * | 2007-03-14 | 2010-07-01 | オムロン株式会社 | Method for manufacturing solar cell and solar cell |
| CN109817731A (en) * | 2019-02-02 | 2019-05-28 | 京东方科技集团股份有限公司 | A kind of photodiode and preparation method thereof, electronic equipment |
| US11469336B2 (en) | 2019-02-02 | 2022-10-11 | Beijing Boe Technology Development Co., Ltd. | Photodiode, method for preparing the same, and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2892921B2 (en) | 1999-05-17 |
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