JPH07130931A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPH07130931A JPH07130931A JP5276566A JP27656693A JPH07130931A JP H07130931 A JPH07130931 A JP H07130931A JP 5276566 A JP5276566 A JP 5276566A JP 27656693 A JP27656693 A JP 27656693A JP H07130931 A JPH07130931 A JP H07130931A
- Authority
- JP
- Japan
- Prior art keywords
- lead
- adhesive
- tape
- lead frame
- adhesive tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、半導体集積回路を搭載
するリードフレームに関し、特に、発熱量の大きい半導
体集積回路を搭載するための、放熱性を向上させたリー
ドフレームに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead frame for mounting a semiconductor integrated circuit, and more particularly to a lead frame for mounting a semiconductor integrated circuit which generates a large amount of heat and having improved heat dissipation.
【０００２】[0002]
【従来の技術】発熱量の大きい半導体集積回路を樹脂封
止型のパッケージに収納する場合、図６に示すような、
たとえば、ＮＥＣ技報 Vol.45 No.8 p.28 1992年
「低熱抵抗プラスチックＱＦＰの開発」、および、Elec
tric Packaging Technology Vol.8 No.5 p.101
1992年「３層構造の多層リードフレーム」に記載のリー
ドフレームが用いられている。2. Description of the Related Art When a semiconductor integrated circuit which generates a large amount of heat is housed in a resin-sealed package, as shown in FIG.
For example, NEC Technical Report Vol.45 No.8 p.28 1992 "Development of low thermal resistance plastic QFP", and Elec
tric Packaging Technology Vol.8 No.5 p.101
In 1992, the lead frame described in "Three-layered multilayer lead frame" is used.
【０００３】その構造は、半導体集積回路搭載部を兼ね
た放熱板とリードフレームのインナーリード部とを絶縁
性の両面接着剤テープによって貼り合わせたもので、放
熱板からの熱放散性の向上を目的としている。In this structure, the heat dissipation plate which also serves as a semiconductor integrated circuit mounting portion and the inner lead part of the lead frame are bonded together by an insulating double-sided adhesive tape to improve the heat dissipation from the heat dissipation plate. Has an aim.
【０００４】このリードフレームに用いられている両面
接着剤テープの構成は、ポリイミドテープを芯材とし
て、その両面に熱硬化型の接着剤が、全面に塗布形成さ
れているものである。The structure of the double-sided adhesive tape used in this lead frame is such that a polyimide tape is used as a core material and a thermosetting adhesive is applied and formed on both surfaces of the polyimide tape.
【０００５】[0005]
【発明が解決しようとする課題】上述したようなリード
フレームに半導体集積回路を搭載し、ワイヤーボンディ
ング、すなわち、金ワイヤーにてリードフレームとを接
続する際、ワイヤーとインナーリードとの接続強度が低
下したり、不着を起こすという問題が発生する。この原
因は以下のように説明できる。When the semiconductor integrated circuit is mounted on the lead frame as described above and the wire bonding, that is, the lead frame is connected by a gold wire, the connection strength between the wire and the inner lead is lowered. There is a problem that you do or cause non-delivery. The cause can be explained as follows.
【０００６】第一に、ワイヤーボンディング時に半導体
集積回路上の電極とワイヤーとの接続の信頼性を高める
ため、通常、リードフレームを１７０℃〜２００℃に加
熱するが、その熱により、両面接着剤テープの表面の接
着剤の軟化が起こり、接続強度不足を引き起こす。場合
によっては、ボンディング時の衝撃によってリードが倒
れてしまう、いわゆるリード転びが発生して不着を起こ
してしまう。この現象は、インナーリードの幅が狭く、
１００ピン以上の多数のリードを有するリードフレーム
において顕著に現れる。First, in order to improve the reliability of the connection between the electrodes on the semiconductor integrated circuit and the wires during wire bonding, the lead frame is usually heated to 170 ° C. to 200 ° C. The heat causes the double-sided adhesive The adhesive on the surface of the tape softens, causing insufficient connection strength. In some cases, the lead falls down due to the impact during bonding, so-called lead rolling occurs and non-sticking occurs. This phenomenon is caused by the narrow width of the inner leads,
It is noticeable in a lead frame having a large number of leads of 100 pins or more.
【０００７】上記した弊害は、特に、ワイヤーボンディ
ング時に超音波を利用した接続を行なう場合に顕著であ
る。ボンディング時に、キャピラリィ（ワイヤーボンデ
ィング装置において、配線に用いるワイヤーを挟持する
部材）を超音波によって振動させ、ワイヤーを接続させ
やすくすることが一般的に行なわれている。その際、接
続対象であるリードを支持している両面接着剤テープの
表面の接着剤が軟化していると、軟化した接着剤の内部
に超音波が放散してしまい、接続に寄与する超音波が損
失するためである。[0007] The above-mentioned adverse effects are particularly noticeable in the case of performing connection using ultrasonic waves during wire bonding. At the time of bonding, it is common practice to vibrate a capillary (a member that holds a wire used for wiring in a wire bonding apparatus) by ultrasonic waves to facilitate connection of the wire. At that time, if the adhesive on the surface of the double-sided adhesive tape supporting the leads to be connected is softened, ultrasonic waves will be dissipated inside the softened adhesive, and ultrasonic waves that contribute to the connection Is lost.
【０００８】第二に、リードフレーム製造時に、接着剤
を硬化させる際、硬化剤の分解生成物と推定される有機
物がガスとして発生し、インナーリード上のワイヤー接
続面に付着する。この有機物の付着がワイヤーボンディ
ング時に、接続強度の低下を引き起こす。Secondly, when the adhesive is cured during the production of the lead frame, an organic substance presumed to be a decomposition product of the curing agent is generated as a gas and adheres to the wire connecting surface on the inner lead. The adhesion of the organic matter causes a decrease in connection strength during wire bonding.
【０００９】これらの不具合点は、両面接着剤テープと
して、およそ３００℃以下では軟化しない熱可塑型の接
着剤を用いれば、解決の可能性がある。しかし、３００
℃以下にて軟化しない接着剤テープを用いて貼り合わせ
る場合、４００℃〜５００℃の熱をかける必要があり、
加熱によるリードフレームの反りや表面の酸化が発生す
るため、熱可塑型の接着剤の使用は適当ではない。These problems can be solved by using a thermoplastic adhesive that does not soften at about 300 ° C. or lower as the double-sided adhesive tape. But 300
When using an adhesive tape that does not soften below ℃, it is necessary to apply heat of 400 ℃ ~ 500 ℃,
Warping of the lead frame and oxidation of the surface occur due to heating, so the use of a thermoplastic adhesive is not appropriate.
【００１０】本発明は、このような不具合点を解消し
て、リードと金ワイヤーの接続強度の向上を図り、その
信頼性を高めるためのリードフレームを提供することを
目的とする。An object of the present invention is to solve the above problems and to provide a lead frame for improving the connection strength between the lead and the gold wire and enhancing the reliability thereof.
【００１１】[0011]
【課題を解決するための手段】上記課題を解決するため
に本発明では、両面接着剤テープを用いて二つの部材を
貼り合わせた構成のリードフレームにおいて、前記テー
プとして、接着面の全面にわたっては接着剤が露出して
いない構成のテープを用いる。In order to solve the above-mentioned problems, according to the present invention, in a lead frame having a structure in which two members are bonded together by using a double-sided adhesive tape, the tape has the entire bonding surface. Use a tape that has no exposed adhesive.
【００１２】すなわち、外枠部と前記外枠部から内側に
伸延された複数のリード部とを有する第一のリードフレ
ーム部材と、半導体集積回路搭載部を兼ねた放熱板であ
る第二のリードフレーム部材とから成り、放熱板とイン
ナーリード部とを、絶縁性の両面熱硬化性接着剤テープ
によって貼り合わせた構成のリードフレームにおいて、
前記接着剤テープの表面が、全面にわたっては接着剤が
露出しておらず、部分的にテープの芯材が露出した構成
とする。That is, a first lead frame member having an outer frame portion and a plurality of lead portions extending inward from the outer frame portion, and a second lead which is a heat dissipation plate also serving as a semiconductor integrated circuit mounting portion. A lead frame composed of a frame member, in which a heat dissipation plate and an inner lead portion are bonded together by an insulating double-sided thermosetting adhesive tape,
The adhesive is not exposed on the entire surface of the adhesive tape, and the core material of the tape is partially exposed.
【００１３】実施態様として、インナーリードと接合す
る側の接着剤テープの表面が、インナーリードと当接し
ない箇所には接着剤が存在せず、テープの芯材のみが露
出した構成とする。As an embodiment, the surface of the adhesive tape on the side to be joined to the inner leads is such that no adhesive is present at a portion that does not contact the inner leads and only the core material of the tape is exposed.
【００１４】好ましくは、前記接着剤テープの芯材とし
て、軟化点が３００℃以上の有機高分子材料を用いる。Preferably, an organic polymer material having a softening point of 300 ° C. or higher is used as the core material of the adhesive tape.
【００１５】[0015]
【作用】本発明のリードフレームの接着剤テープにおい
ては、インナーリード部や放熱板との接合部表面が、全
面は接着剤で構成されておらず、テープ芯材面と接着剤
面との双方により構成される。In the adhesive tape of the lead frame of the present invention, the surfaces of the inner lead portion and the joint portion with the heat sink are not entirely composed of an adhesive, and both the tape core material surface and the adhesive surface are formed. It is composed of
【００１６】前記芯材の軟化点は、３００℃以上である
ため、ワイヤーボンディング時に、通常の加熱によって
接着剤が軟化しても、芯材は軟化しない。これにより、
芯材にてリードを固定できるため、接続強度不足を引き
起こさず、かつ、リード転びも起こらない。Since the softening point of the core material is 300 ° C. or higher, the core material does not soften even if the adhesive softens by ordinary heating during wire bonding. This allows
Since the lead can be fixed with the core material, the connection strength will not be insufficient and the lead will not fall.
【００１７】また、接着剤面の露出が少ないため、前述
した有機物ガスの発生は抑えられ、インナーリード上の
ワイヤー接続面に付着することに起因する接続強度不足
を引き起こさず、リード上のワイヤー接続部の接続信頼
性が期待できる。Further, since the adhesive surface is less exposed, the above-mentioned generation of the organic gas is suppressed, the connection strength is not insufficient due to the adhesion to the wire connection surface on the inner lead, and the wire connection on the lead is connected. The connection reliability of the department can be expected.
【００１８】接着剤面の形状は、特に限定されるもので
はなく、インナーリード部や放熱板との接続部が、接着
剤面とテープ芯材面との双方から形成されていれば良
い。The shape of the adhesive surface is not particularly limited as long as the inner lead portion and the connection portion with the heat dissipation plate are formed from both the adhesive surface and the tape core material surface.
【００１９】また、接着剤テープの断面構造も限定され
るものではなく、表面に接着剤層が埋設されていても、
接着剤が貫通して形成されていても良い。Further, the sectional structure of the adhesive tape is not limited, and even if the adhesive layer is embedded on the surface,
The adhesive may be formed so as to penetrate therethrough.
【００２０】[0020]
【実施例】以下、図面を参照して、本発明によるリード
フレームの実施例について説明する。Embodiments of the lead frame according to the present invention will be described below with reference to the drawings.
【００２１】図１は、本実施例に係るリードフレームを
示す平面図である。また、図２は、本発明のリードフレ
ームに半導体集積回路を搭載して、金ワイヤーにて接続
した状態を示す断面説明図である。FIG. 1 is a plan view showing a lead frame according to this embodiment. Further, FIG. 2 is a cross-sectional explanatory view showing a state in which a semiconductor integrated circuit is mounted on the lead frame of the present invention and is connected by a gold wire.
【００２２】図において、１は外枠部６から伸延された
リード部で、そのインナーリード部（先端部）が、絶縁
性の両面熱硬化型接着剤テープ３を介して、放熱板２と
接着されている。ここで、この放熱板２は半導体集積回
路搭載部をも兼ねている。In the figure, reference numeral 1 denotes a lead portion extended from the outer frame portion 6, and an inner lead portion (tip portion) thereof is bonded to a heat radiating plate 2 via an insulating double-sided thermosetting adhesive tape 3. Has been done. Here, the heat dissipation plate 2 also serves as a semiconductor integrated circuit mounting portion.
【００２３】絶縁性の両面熱硬化型接着剤テープ３にお
いて、インナーリード部との接合部７および放熱板との
接合部８は、接着剤面３２および芯材面３４が部分的に
露出した構成である。In the insulating double-sided thermosetting adhesive tape 3, the adhesive surface 32 and the core material surface 34 of the joint portion 7 with the inner lead portion and the joint portion 8 with the heat dissipation plate are partially exposed. Is.
【００２４】以下、本出願においては、接着剤面３２
は、便宜上、図１に示すように、ハッチング部として表
すこととする。Hereinafter, in the present application, the adhesive surface 32
For convenience, as shown in FIG.
【００２５】図３は、本発明に係る接着剤テープを示す
説明図であり、図３（ａ）および図３（ｃ）は、インナ
ーリード部と絶縁性の両面熱硬化型接着剤テープ３との
接合部付近を拡大した平面図である。FIG. 3 is an explanatory view showing an adhesive tape according to the present invention. FIGS. 3 (a) and 3 (c) show an inner lead portion and an insulating double-sided thermosetting adhesive tape 3. FIG. 4 is an enlarged plan view of the vicinity of the joint part of FIG.
【００２６】また、図３（ｂ）および図３（ｄ）は、そ
れぞれ、図３（ａ）および図３（ｃ）からインナーリー
ドを除去して、インナーリード部との接合部７を露呈さ
せた状態の平面図である。3 (b) and 3 (d), the inner leads are removed from FIGS. 3 (a) and 3 (c) to expose the joint 7 with the inner leads. FIG.
【００２７】＜実施例１＞第一の実施例は請求項１に対
応し、図３（ａ）および図３（ｂ）に対応する。以下、
インナーリード部との接合部７に関してのみ説明する
が、放熱板との接合部８についても同様のことが言え
る。<Embodiment 1> The first embodiment corresponds to claim 1 and corresponds to FIGS. 3 (a) and 3 (b). Less than,
Only the joint 7 with the inner lead portion will be described, but the same can be said for the joint 8 with the heat dissipation plate.
【００２８】本実施例のリードフレームにおいて、両面
接着剤テープのインナーリード部との接着部７以外の表
面は、図３（ａ）および図３（ｂ）に示すように、接合
部７と同様に、接着剤面３２および芯材面３４から成っ
ている。In the lead frame of the present embodiment, the surface of the double-sided adhesive tape other than the bonding portion 7 with the inner lead portion is the same as the bonding portion 7 as shown in FIGS. 3 (a) and 3 (b). In addition, it comprises an adhesive surface 32 and a core surface 34.
【００２９】ここで、接着剤面３２が芯材面３４に露出
する形状は、特に限定するものではなく、図４（ａ）に
示すようなストライプ状のものや、図４（ｂ）に示すよ
うなドット状のものでも良い。Here, the shape of the adhesive surface 32 exposed on the core material surface 34 is not particularly limited, and is a stripe shape as shown in FIG. 4 (a) or as shown in FIG. 4 (b). It may be a dot-like one.
【００３０】また、接着剤テープの断面構造も、特に、
限定するものではなく、図５（ａ）に示すように、接着
剤層３１が表面に埋設されていたり、図５（ｂ）に示す
ように、接着剤層３１が貫通して形成されていても良
い。The cross-sectional structure of the adhesive tape is also
The present invention is not limited to this. As shown in FIG. 5 (a), the adhesive layer 31 is embedded in the surface, or as shown in FIG. 5 (b), the adhesive layer 31 is formed so as to penetrate therethrough. Is also good.
【００３１】＜実施例２＞第二の実施例は請求項２に対
応し、図３（ｃ）および図３（ｄ）に対応する。<Second Embodiment> A second embodiment corresponds to claim 2 and corresponds to FIGS. 3 (c) and 3 (d).
【００３２】以下、インナーリード部との接着剤部７に
関してのみ説明するが、放熱板との接着部８についても
同様のことが言える。Hereinafter, only the adhesive portion 7 to the inner lead portion will be described, but the same can be said for the adhesive portion 8 to the heat dissipation plate.
【００３３】本実施例のリードフレームにおいて、両面
接着剤テープのインナーリード部との接着部７以外の表
面は、図３（ｃ）および図３（ｄ）に示すように、芯材
面３４のみから成っている。In the lead frame of this embodiment, the surface of the double-sided adhesive tape other than the bonding portion 7 with the inner lead portion is the core material surface 34 only, as shown in FIGS. 3 (c) and 3 (d). Made of.
【００３４】ここで、接着剤面３２が芯材面３４に露出
する形状および接着剤テープの断面構造も第１の実施例
同様に限定されるものではない。Here, the shape in which the adhesive surface 32 is exposed to the core material surface 34 and the sectional structure of the adhesive tape are not limited to those in the first embodiment.
【００３５】[0035]
【発明の効果】本発明のリードフレームによって、リー
ドと金ワイヤーの接続強度の向上が図られ、その信頼性
が高められる。とりわけ、超音波を利用したワイヤーボ
ンディング行なう場合に、その効果は顕著である。According to the lead frame of the present invention, the connection strength between the lead and the gold wire is improved and the reliability thereof is improved. In particular, the effect is remarkable when performing wire bonding using ultrasonic waves.
【００３６】具体的には、テープ表面に露出する接着剤
の面積が小さいので、接着剤から発生する有機物ガスの
発生量が抑えられ、インナーリードの表面が前記ガスに
より侵されることがない。Specifically, since the area of the adhesive exposed on the tape surface is small, the amount of organic gas generated from the adhesive is suppressed, and the surface of the inner lead is not attacked by the gas.
【００３７】また、ワイヤーボンデング時の加熱によ
り、接着剤が軟化する面積も小さくなるため、リード転
び等の弊害が軽減される。Also, since the area where the adhesive softens due to the heating during wire bonding is reduced, adverse effects such as lead rolling can be reduced.
【００３８】[0038]
【図１】本発明の一実施例に係るリードフレームを示す
平面図。FIG. 1 is a plan view showing a lead frame according to an embodiment of the present invention.
【図２】本発明のリードフレームに半導体集積回路を搭
載して、金ワイヤーにて接続した状態を示す断面説明
図。FIG. 2 is an explanatory cross-sectional view showing a state in which a semiconductor integrated circuit is mounted on the lead frame of the present invention and is connected by a gold wire.
【図３】本発明に係る接着剤テープを示す説明図。FIG. 3 is an explanatory view showing an adhesive tape according to the present invention.
【図４】本発明に係る接着剤テープを示す説明図。FIG. 4 is an explanatory view showing an adhesive tape according to the present invention.
【図５】本発明に係る接着剤テープを示す断面説明図。FIG. 5 is a cross-sectional explanatory view showing an adhesive tape according to the present invention.
【図６】従来技術に係るリードフレームの断面説明図。FIG. 6 is a cross-sectional explanatory view of a lead frame according to a conventional technique.
１ …リード部（インナーリード部） ２ …放熱板 ３ …両面接着剤テープ ３１…接着剤 ３２…接着剤面 ３３…テープ芯材 ３４…テープ芯材面 ４ …半導体集積回路 ５ …金ワイヤー ６ …外枠部 ７ …インナーリード部との接着面 ８ …放熱板との接着面 DESCRIPTION OF SYMBOLS 1 ... Lead part (inner lead part) 2 ... Heat sink 3 ... Double-sided adhesive tape 31 ... Adhesive 32 ... Adhesive surface 33 ... Tape core material 34 ... Tape core material surface 4 ... Semiconductor integrated circuit 5 ... Gold wire 6 ... Outer frame portion 7 ... Adhesive surface with inner lead portion 8 ... Adhesive surface with heat sink
Claims (3)
複数のリード部とを有する第一のリードフレーム部材
と、半導体集積回路搭載部を兼ねた放熱板である第二の
リードフレーム部材とから成り、放熱板とインナーリー
ド部とを、絶縁性の両面熱硬化型接着剤テープによって
貼り合わせた構成のリードフレームにおいて、 前記接着剤テープの表面が、全面にわたっては接着剤が
露出しておらず、部分的にテープの芯材が露出した構成
であるリードフレーム。1. A first lead frame member having an outer frame portion and a plurality of lead portions extending inward from the outer frame portion, and a second lead which is a heat dissipation plate also serving as a semiconductor integrated circuit mounting portion. A lead frame comprising a frame member and a heat dissipation plate and an inner lead portion bonded together by an insulating double-sided thermosetting adhesive tape, wherein the surface of the adhesive tape is exposed over the entire surface. The lead frame is a structure in which the core material of the tape is partially exposed.
プの表面が、インナーリードと当接しない箇所には接着
剤が存在せず、テープの芯材のみが露出した構成である
請求項１に記載のリードフレーム。2. The surface of the adhesive tape on the side to be joined to the inner lead has a structure in which the adhesive does not exist in a portion which does not contact the inner lead and only the core material of the tape is exposed. Lead frame as described.
３００℃以上の有機高分子材料を用いた構成である請求
項１または請求項２に記載のリードフレーム。3. The lead frame according to claim 1, wherein an organic polymer material having a softening point of 300 ° C. or higher is used as a core material of the adhesive tape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5276566A JPH07130931A (en) | 1993-11-05 | 1993-11-05 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5276566A JPH07130931A (en) | 1993-11-05 | 1993-11-05 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07130931A true JPH07130931A (en) | 1995-05-19 |
Family
ID=17571273
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5276566A Pending JPH07130931A (en) | 1993-11-05 | 1993-11-05 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07130931A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148520A (en) * | 1995-11-24 | 1997-06-06 | Nec Kyushu Ltd | Taping lead frame |
| EP0881677A1 (en) * | 1996-02-15 | 1998-12-02 | Nitto Denko Corporation | Semiconductor device and multilayered lead frame used for the same |
-
1993
- 1993-11-05 JP JP5276566A patent/JPH07130931A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09148520A (en) * | 1995-11-24 | 1997-06-06 | Nec Kyushu Ltd | Taping lead frame |
| EP0881677A1 (en) * | 1996-02-15 | 1998-12-02 | Nitto Denko Corporation | Semiconductor device and multilayered lead frame used for the same |
| EP0881677A4 (en) * | 1996-02-15 | 2001-01-31 | Nitto Denko Corp | Semiconductor device and multilayered lead frame used for the same |
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