JP2861984B2 - Semiconductor device and method of manufacturing the semiconductor device - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which is formed in a size substantially equal to the size of a semiconductor element and is suitable for high-density mounting.

[0002]

2. Description of the Related Art In recent years, semiconductor devices have been reduced in size, weight, speed, and performance, and have been formed to be approximately the same size as semiconductor elements. Such a semiconductor device is generally called a CSP (chip size package).

FIG. 9 is a sectional view showing a conventional semiconductor device disclosed in Japanese Patent Application Laid-Open No. 8-102474.

[0004] As shown in FIG.
1 (hereinafter, referred to as “CSP 101”) is configured by joining a semiconductor element 103 on a carrier film 102.

The carrier film 102 includes an organic insulating film layer 104, a conductor layer 105 formed below the organic insulating film layer 104, a resist material layer 106 formed below the conductor layer 105, and an organic insulating film layer 104. 104
Has an adhesive layer 107 formed as an upper layer. A plurality of through holes 108 are formed in the carrier film 102 so as to penetrate the organic insulating film layer 104 and the adhesive layer 107.
A metal bump 109 connected to the third device electrode 112 is formed. Further, bump electrodes 111 are formed on connection terminals 110 formed on the carrier film 102 for connecting the CSP 101 to a substrate (not shown) on which the CSP 101 is mounted.

An element electrode 112 of the semiconductor element 103 is connected to a metal bump 109 of the carrier film 102, and a bottom surface, which is a circuit wiring surface of the semiconductor element 103, is adhered to an adhesive layer 107 of the carrier film 102.

[0007] In the CSP 101 configured as described above, a large amount of power is consumed by the semiconductor element 103 in accordance with the miniaturization and high integration of the semiconductor element 103 used, so that high heat is generated. Conventionally, as shown in FIG. 10, a CSP 10 is provided by attaching a heat sink 113 to the upper surface of the semiconductor element 103 with an adhesive 114.
1 has improved heat dissipation.

[0008]

However, in the conventional semiconductor device, since it is necessary to apply an adhesive and attach a heat sink, the constituent materials of the semiconductor device and the number of manufacturing steps are increased. Furthermore, when a heat sink is installed on the semiconductor device, the height of the semiconductor device is increased by the height of the heat sink and the thickness of the adhesive, and the semiconductor device is enlarged, so that the high density mounting of the semiconductor device in electronic equipment is performed. May be disturbed.

Accordingly, an object of the present invention is to provide a semiconductor device capable of improving heat dissipation without increasing constituent materials and manufacturing steps.

[0010]

To achieve the above object, a semiconductor device according to the present invention is a semiconductor device comprising a carrier film having a conductor layer and a semiconductor element having a circuit wiring surface joined to the carrier film. In the device, the carrier film is formed wider than the circuit wiring surface of the semiconductor device, and the carrier film has a portion where the circuit wiring surface of the semiconductor element is not bonded,
A conductor layer for radiating heat generated in the semiconductor element is formed.

As a result, the area of the conductor layer formed on the carrier film increases, and the heat dissipation effect of the semiconductor device improves.

[0012] Further, by adopting a configuration in which a portion of the carrier film where the circuit wiring surface of the semiconductor element is not bonded is bonded to a side surface of the semiconductor element.
The heat dissipation from the side of the semiconductor device is improved, and the heat dissipation of the semiconductor device is further improved.

[0013] Further, the semiconductor device is substantially the same as the semiconductor element by adopting a configuration in which a portion of the carrier film that is joined to the side surface of the semiconductor element is formed in a shape congruent with the side surface of the semiconductor element. It is formed in size.

[0014] Further, the carrier film is formed so as to extend over another circuit element mounted on the substrate when the semiconductor device is mounted on the substrate. In addition, heat generated in the semiconductor device and heat generated in other circuit elements are dissipated through the carrier film.

According to a method of manufacturing a semiconductor device of the present invention, a semiconductor device has a conductor layer, is formed to be wider than a circuit wiring surface of a semiconductor element to be joined, and has a semiconductor element in a portion where the circuit wiring surface of the semiconductor element is not joined. Bonding a circuit wiring surface of the semiconductor element to a carrier film on which a conductor layer for radiating heat generated in the semiconductor film is formed, and the circuit wiring surface of the semiconductor element of the carrier film is not bonded. Joining the portion to the side surface of the semiconductor element.

According to the semiconductor device of the present invention, the heat dissipation can be improved without increasing the number of constituent materials and the number of manufacturing steps. The heat dissipation is further improved by bonding the carrier film to the side surface of the semiconductor element. The manufactured semiconductor device is manufactured.

[0017] Further, the step of forming the carrier film by cutting out the film member having the conductor layer allows the carrier film to be formed efficiently.

Further, in the step of forming the carrier film by cutting out the film member having the conductor layer, the carrier film is formed in a shape corresponding to a developed shape of a circuit wiring surface and a side surface of the semiconductor element. Thereby, the shape of the carrier film bonded to the side surface of the semiconductor device is formed in a shape congruent with the side surface,
A semiconductor device is formed to have substantially the same size as a semiconductor element.

[0019]

Next, embodiments of the present invention will be described with reference to the drawings.

(First Embodiment) FIG. 1 is a sectional view showing a semiconductor device according to a first embodiment of the present invention.

As shown in FIG. 1, a semiconductor device 1 (hereinafter, referred to as “CSP 1”) of the present embodiment is configured by joining a semiconductor element 3 on a carrier film 2. The CSP 1 is different from the conventional semiconductor device in that the carrier film 2 is also bonded to the side surface of the semiconductor element 3.
In addition, the organic insulating film layer 4 of the carrier film 2,
The configuration of the conductor layer 5, the resist material layer 6, the adhesive layer 7, the through hole 8, the metal bump 9, the connection terminal 10, the bump electrode 11, and the element electrode 12 of the semiconductor element 3 is the same as that of the conventional semiconductor shown in FIG. Since it is the same as the device 101, detailed description is omitted.

The conductor layer 5 of the carrier film 2 is
It is formed of a copper foil or the like. The through hole 8 is formed by Ar laser processing or chemical etching.
The metal bumps 9 are formed using a plating method. Au is suitable for the material of the metal bumps 9, but other metals that are welded to the device electrodes 12 of the CSP 1 by heating can also be used.

FIG. 2 is a plan view showing a ribbon film on which the carrier film shown in FIG. 1 is formed.

As shown in FIG.
Are formed in units of several tens to several hundreds on one ribbon film 13 which is a film member. The carrier film 2 is formed in a shape corresponding to a developed view of the bottom and side surfaces of the semiconductor element 2 (see FIG. 1). A wiring pattern (not shown) is formed by pattern-etching a copper foil or the like of the conductor layer 5 (see FIG. 1) on the main body 2a of the carrier film 2 corresponding to the bottom surface which is the circuit wiring surface of the semiconductor element 3. Is formed. On the other hand, no wiring pattern is formed on the conductor layer 5 at the edge 2b corresponding to the side surface of the semiconductor element 3, and copper foil or the like is formed in a flat plate shape over the entire surface of the edge 2b. The conductor layer 5 on the edge 2b is not used as a signal wiring. Each of the carrier films 2 is, as described later, a ribbon film 1 after the semiconductor element 3 is mounted.
Cut out from 3. As described above, the carrier film 2 can be efficiently formed by cutting out the carrier film 2 from the ribbon film 13 on which the plurality of carrier films 2 are formed.

Next, the manufacturing process of the CSP 1 will be described with reference to FIGS.
This will be described with reference to FIG. FIG. 3 is a sectional view showing a series of manufacturing steps of the semiconductor device shown in FIG. 1, and FIG. 4 is a top view of the carrier film shown in FIG.

First step: As shown in FIG. 3A, the positions of the metal bumps 9 formed on the main body 2a of the carrier film 2 formed on the ribbon film 13 and the device electrodes 12 of the semiconductor device 3 Perform alignment.

Second step: As shown in FIG. 3B, the metal bumps 9 are brought into contact with the device electrodes 12. Next, the metal bump 9 is heated from the back side of the conductor layer 5 by using the bonding tool 14 and further subjected to ultrasonic vibration, so that the metal bump 9 is welded to the element electrode 12.

Third step: As shown in FIG. 3C, the main body 2a of the carrier film 2 is heated and pressed against the semiconductor element 3 using a crimping tool 15 having the same size as the bottom surface of the semiconductor element 3, The bottom surface which is the circuit wiring surface of the semiconductor element 3 is bonded to the adhesive layer 7 of the carrier film 2.

Fourth step: As shown in FIG. 3D, bump electrodes 11 are formed on the connection terminals 10 formed for connecting the CSP 1 (see FIG. 1) to a substrate (not shown).
In general, solder is used as the material of the bump electrode 11, but a metal having good bondability with a mounting wiring formed on a substrate or the like on which the CSP 1 is mounted can also be used.

Fifth step: As shown in FIGS. 3E and 4, the carrier film 2 is cut out from the ribbon film 13 into a shape corresponding to the developed shape of the bottom and side surfaces of the semiconductor element 3.

Sixth step: First, as shown in FIG. 3F, the edge 2b of the carrier film 2 is bent. Then
As shown in FIG. 3 (g), the edge 2b is heated and pressed against the side surface of the semiconductor element 3, and the side surface of the semiconductor element 3 and the adhesive layer 7 of the carrier film 2 are bonded. As a result, CS
P1 is completed.

In the CSP 1 configured as described above, since the copper foil or the like forming the conductor layer 5 of the carrier film 2 has excellent heat dissipation, the carrier film 2 also functions as a radiator. In particular, in the CSP 1 of the present embodiment, since the carrier film 2 is formed wider than the bottom surface of the semiconductor element 3, the area of the conductor layer 5 formed on the carrier film 2 increases, and thus the CSP 1 is generated in the semiconductor element 3. The heat radiation effect is improved. Therefore, there is no need to install a heat sink unlike the conventional semiconductor device, and the heat dissipation of the CSP 1 can be improved without increasing the constituent materials and the number of manufacturing steps.

Further, as shown in FIG. 1 and the like, the configuration in which the carrier film 2 is bonded to the side surface of the semiconductor element 3 improves heat dissipation from the side surface.
The heat dissipation of the CSP 1 can be further improved. Further, by forming the carrier film 2 bonded to the side surface of the semiconductor element 3 to have the same shape as the side surface of the semiconductor element 3 (that is, the same shape and the same area), the CSP 1 can be combined with the semiconductor element 3. They can be formed in substantially the same size. When bonding the carrier film 2 to the side surface of the semiconductor element 3, the carrier film 2
Since the adhesive layer 7 formed in advance is used, there is also an advantage that it is not necessary to separately apply an adhesive.

When the carrier film 2 is bonded to the side surface of the semiconductor element 3 as described above, the width and length of the CSP 1 are increased by the thickness of the carrier film 2.

On the other hand, the conventional CSP 101 shown in FIG.
Then, after the semiconductor element 103 is bonded to the carrier film 102, by using a metal blade or a laser cutter.
A carrier film 102 is cut out from a ribbon film (not shown) in the same shape as the bottom surface of the semiconductor element 102.

However, in the case of cutting using a metal blade, a "cut margin" having a thickness of the metal blade is formed, so that the carrier film 102 is cut out larger than the size of the semiconductor element 103 by the "cut margin". Will be. In the case of cutting out with a laser cutter, the laser light is cut away from the semiconductor element 103 so as not to contact the semiconductor element 103, so that the carrier film 102 is cut out. . Therefore, in practice, the carrier film 102 protrudes from each side surface of the semiconductor element 103 by an amount corresponding to the “cut margin”.
2 is not the same size as the semiconductor element 103.
The protrusion width of the “cut margin” is about 50 μm, which is almost the same as the thickness of the carrier film 102.

The thickness of the carrier film 2 of the present embodiment is the same as that of the prior art. Therefore, when the carrier film 2 is bonded to the side surface of the semiconductor element 3, the carrier film 2
Although the width and length of CSP1 increase by the thickness of
The size is substantially the same as the conventional semiconductor device, and the CSP 1 does not become larger than the conventional semiconductor device.

The CSP 1 shown in FIG. 1 and the like is called a real chip size type CSP because the main body 2a of the carrier film 2 has the same shape and the same area as the bottom surface of the semiconductor element 3. I have.

Next, a modification of the semiconductor device shown in FIG. 1 and the like will be described.

FIG. 5 is a sectional view showing a modification of the semiconductor device shown in FIG.

As shown in FIG. 5, in the semiconductor device 21 of this application example (hereinafter referred to as “CSP 21”), the semiconductor element 23 is sealed with the resin 36 except for the bottom surface, so that the element to be sealed is removed. 23 'is constituted. CSP21
The main body 22a of the carrier film 22 is larger than the bottom surface of the semiconductor element 23, and a part of the main body part 22a protrudes in a flange shape from the bottom surface of the semiconductor element 23, so that it is called a flanged CSP.

In addition, the edge 22 of the carrier film 22
b, the configuration of the organic insulating film layer 24, the conductor layer 25, the resist material layer 26, the adhesive layer 27, the through hole 28, the metal bump 29, the connection terminal 30, the bump electrode 31, and the element electrode 32 of the semiconductor element 23 CSP1 shown in FIG.
Therefore, detailed description is omitted.

FIG. 6 is a sectional view showing a series of manufacturing steps of the semiconductor device shown in FIG.

In this modification, in a third step shown in FIG. 6D, the semiconductor element 23 is sealed with a resin 36 to form a sealed element 23 '. Note that the bottom surface of the element to be sealed 23 ′ is
It is configured to have the same shape (that is, the same shape and the same area) as 2a. In addition, as shown in FIG.
6B, a third step shown in FIG. 6C, a fourth step shown in FIG. 6E, a fifth step shown in FIG. 6F, and FIG. 6) and the sixth step shown in FIG. 6H are the same as the respective steps shown in FIG. The bonding tool 34 used in the second step shown in FIG. 6B and the crimping tool 35 used in the third step shown in FIG. 6C are respectively the bonding tool 14 and the crimping tool 15 shown in FIG. It is configured similarly to.

According to the CSP 21 configured as described above, the main body 22a of the carrier film 22 can be made wider by using a flanged type.
Accordingly, since the semiconductor element 23 is very small, all of the bump electrodes 31 have a size of about the area of the bottom surface of the semiconductor element 23.
Even if it is not possible to form the main body 2
All the bump electrodes 31 can be formed on 2a.

(Second Embodiment) FIG. 7 is a side view showing a semiconductor device according to a second embodiment of the present invention.

As shown in FIG. 7, in the semiconductor device 41 (hereinafter, referred to as “CSP 41”) of the present embodiment, a carrier film 42 having a larger area than the carrier film 2 shown in FIG. The semiconductor device 43 is bonded. The carrier film 42 of the present embodiment is also configured in the same manner as the carrier film 2 shown in FIG. 1 and the like. An organic insulating film layer is formed below the adhesive layer to which the semiconductor element 43 is adhered. A conductor layer is formed as a lower layer, and a resist material layer is formed as a lower layer. The bump electrode 44 formed on the carrier film 42 is connected to a wiring (not shown) formed on the substrate 45, whereby the CSP 41 is mounted on the substrate 45.

The carrier film 42 of the CSP 41 mounted on the substrate 45 extends on other circuit elements 46 and the like mounted on the substrate 45.

With the above structure, the carrier film 42
Since the surface area of the CSP 41 is much larger than that of the first embodiment, the heat dissipation of the CSP 41 is further improved. further,
Since the carrier film 42 extends over the other circuit elements 46 and the like, the other circuit elements 4 having no heat radiating means are provided.
6 and the like can be dissipated through the carrier film 42.

As shown in FIG. 7, the carrier film 42 comes into contact with other circuit elements 46 and the wiring of the substrate 45. Since the carrier film 42 comes into contact with the resist material layer of the carrier film 42, a short circuit or the like occurs. No electrical failure occurs.

The larger the carrier film 42 is, the more the heat radiation effect of the CSP 41 can be improved. However, it is desirable to form the carrier film 42 smaller than the substrate 45 on which the CSP 41 is mounted. This prevents the space when the substrate 45 is incorporated into an electronic device or the like (not shown) from being increased, and the CSP 41 is detached from the substrate 45 by inadvertently hooking the carrier film 42 on another substrate or the like. Manufacturing errors can be prevented beforehand.

Further, in the CSP 41 of the present embodiment, an example is shown in which the semiconductor element 43 is bonded to the carrier film 42. However, as shown in FIG. May be joined.

[0053]

As described above, in the semiconductor device of the present invention, the carrier film is formed to be wider than the circuit wiring surface of the semiconductor device, and the portion of the carrier film where the semiconductor element is not bonded is heated by the semiconductor element. Since the conductor layer for dissipating the heat is formed, the heat dissipation can be improved without increasing the constituent materials and the number of manufacturing steps.

Further, by joining the portion of the carrier film where the circuit wiring surface of the semiconductor element is not joined to the side face of the semiconductor element, the heat dissipation from the side face of the semiconductor device is improved. The radiation performance can be further improved.

Further, by forming the portion of the carrier film that is joined to the side surface of the semiconductor element into a shape congruent with the side surface of the semiconductor element, the semiconductor device can be formed to have substantially the same size as the semiconductor element. .

Further, by forming the carrier film into a shape extending over another circuit element mounted on the substrate when the semiconductor device is mounted on the substrate, heat generated in the semiconductor device can be reduced. Heat generated in other circuit elements
It can be diffused through the carrier film.

According to the method of manufacturing a semiconductor device of the present invention, a conductor layer for dissipating heat generated in the semiconductor element is formed in a portion where the semiconductor element is not joined, and is formed wider than a circuit wiring surface of the semiconductor element to be joined. Bonding the semiconductor element to the carrier film, and the step of bonding the part of the carrier film where the semiconductor element is not bonded to the side surface of the semiconductor element, without increasing the constituent materials and the number of manufacturing steps. A semiconductor device capable of improving heat dissipation can be manufactured, in which a carrier film is bonded to a side surface of a semiconductor element to further improve heat dissipation.

Further, a carrier film can be formed efficiently by adding a step of forming a carrier film by cutting out a film member having a conductor layer.

Further, in the step of forming the carrier film, the carrier film is formed into a shape corresponding to the developed shape of the circuit wiring surface and the side surface of the semiconductor element, so that the carrier film is joined to the side surface of the semiconductor device. Since the shape of the portion is formed to be the same shape as the side surface, the semiconductor device can be formed to have substantially the same size as the semiconductor element.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a first embodiment of a semiconductor device of the present invention.

FIG. 2 is a plan view showing a ribbon film on which the carrier film shown in FIG. 1 is formed.

FIG. 3 is a cross-sectional view showing a series of manufacturing steps of the semiconductor device shown in FIG.

FIG. 4 is a top view of the carrier film shown in FIG.

FIG. 5 is a sectional view showing a modification of the semiconductor device shown in FIG. 1;

6 is a cross-sectional view showing a series of manufacturing steps of the semiconductor device shown in FIG.

FIG. 7 is a side view showing a second embodiment of the semiconductor device of the present invention.

FIG. 8 shows a second embodiment of the semiconductor device of the present invention.
It is the side view which fractured | ruptured one part.

FIG. 9 is a sectional view showing a conventional semiconductor device.

FIG. 10 is a sectional view showing another example of a conventional semiconductor device.

DESCRIPTION OF SYMBOLS 1,21,41 Semiconductor device 2,22,42 Carrier film 2a, 22a Body portion 2b, 22b Edge 3,23,43,43 'Semiconductor element 4,24 Organic insulating film layer 5,25 Conductor Layer 6,26 Resist material layer 7,27 Adhesive layer 8,28 Through hole 9,29 Metal bump 10,30 Connection terminal 11,31,44 Bump electrode 12,32 Device electrode 13 Ribbon film 14,34 Bonding tool 15, 35 Crimping tool 23 'Sealed element 36,47 Resin 45 Substrate 46 Circuit element

Claims (7)

(57) [Claims] 1. A semiconductor device comprising a carrier film having a conductor layer and a semiconductor element having a circuit wiring surface joined to the carrier film, wherein the carrier film is formed wider than a circuit wiring surface of the semiconductor device. A semiconductor device, wherein a conductor layer for radiating heat generated in the semiconductor element is formed in a portion of the carrier film where a circuit wiring surface of the semiconductor element is not joined. 2. The semiconductor device according to claim 1, wherein a portion of the carrier film to which the circuit wiring surface of the semiconductor element is not bonded is bonded to a side surface of the semiconductor element. 3. The semiconductor device according to claim 2, wherein a portion of said carrier film joined to a side surface of said semiconductor element is formed in a shape congruent with a side surface of said semiconductor element. 4. The carrier film according to claim 1, wherein the carrier film is formed to extend on another circuit element mounted on the substrate when the semiconductor device is mounted on the substrate. Semiconductor device. 5. A semiconductor device having a conductor layer formed to be wider than a circuit wiring surface of a semiconductor element to be joined, and dissipating heat generated in the semiconductor element to a portion where the circuit wiring surface of the semiconductor element is not joined. Bonding the circuit wiring surface of the semiconductor element to the carrier film on which the conductive layer is formed; and placing the portion of the carrier film where the circuit wiring surface of the semiconductor element is not bonded on the side surface of the semiconductor element. Joining the semiconductor device. 6. The method for manufacturing a semiconductor device according to claim 5, further comprising the step of forming the carrier film by cutting out a film member having a conductor layer. 7. The step of cutting out a film member having a conductor layer to form the carrier film, wherein the carrier film is formed in a shape corresponding to a developed shape of a circuit wiring surface and a side surface of the semiconductor element. 7. The method for manufacturing a semiconductor device according to item 6.