JPH07130652A - 半導体作製方法 - Google Patents
半導体作製方法Info
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Abstract
℃程度、4時間程度の加熱処理で結晶性珪素を得る方法
において、触媒元素の導入量を精密に制御する。 【構成】 ガラス基板11上に形成された非晶質珪素膜
12上に極薄の酸化膜13を形成し、ニッケル等の触媒
元素を10〜200ppm(要調整)添加した酢酸塩溶
液等の水溶液14を滴下する。この状態で所定の時間保
持し、スピナー15を用いてスピンドライを行なう。そ
して、550℃、4時間の加熱処理を行なうことによ
り、結晶性珪素膜を得る。上記構成において、溶液中の
触媒元素の濃度を調整することで、完成した結晶性珪素
膜中における触媒元素の濃度を精密に制御することがで
きる。
Description
作製方法に関する。
(以下TFT等)が知られている。このTFTは、基板
上に薄膜半導体を形成し、この薄膜半導体を用いて構成
されるものである。このTFTは、各種集積回路に利用
されているが、特にアクティブマトリックス型の液晶表
示装置の各画素の設けられたスイッチング素子、周辺回
路部分に形成されるドライバー素子として注目されてい
る。
非晶質珪素膜を用いることが簡便であるが、その電気的
特性が低いという問題がある。TFTの特性向上を得る
ためには、結晶性を有するシリコン薄膜を利用するばよ
い。結晶性を有するシリコン膜は、多結晶シリコン、ポ
リシリコン、微結晶シリコン等と称されている。この結
晶性を有するシリコン膜を得るためには、まず非晶質珪
素膜を形成し、しかる後に加熱によって結晶化さればよ
い。
温度が600℃以上の温度で10時間以上の時間を掛け
ることが必要であり、基板としてガラス基板を用いるこ
とが困難であるという問題がある。例えばアクティブ型
の液晶表示装置に用いられるコーニング7059ガラス
はガラス歪点が593℃であり、基板の大面積化を考慮
した場合、600℃以上の加熱には問題がある。
ば、非晶質珪素膜の表面にニッケルやパラジウム、さら
には鉛等の元素を微量に堆積させ、しかる後に加熱する
ことで、550℃、4時間程度の処理時間で結晶化を行
なえることが判明している。
る触媒元素)を導入するには、プラズマ処理や蒸着、さ
らにはイオン注入を利用すればよい。プラズマ処理と
は、平行平板型のプラズマCVD装置において、電極と
して触媒元素を含んだ材料を用い、水素等の雰囲気でプ
ラズマを生じさせることによって非晶質珪素膜に触媒元
素の添加を行なう方法である。
中に多量に存在していることは、これら半導体を用いた
装置の信頼性や電気的安定性を阻害するものであり好ま
しいことではない。
る元素(触媒元素)は、非晶質珪素を結晶化させる際に
は必要であるが、結晶化した珪素中には極力含まれない
ようにすることが望ましい。この目的を達成するには、
触媒元素として結晶性珪素中で不活性な傾向が強いもの
を選ぶと同時に、結晶化に必要な触媒元素の量を極力少
なくし、最低限の量で結晶化を行なう必要がある。そし
てそのためには、上記触媒元素の添加量を精密に制御し
て導入する必要がある。
晶質珪素膜を成膜し、ニッケル添加をプラズマ処理法に
よって行ない結晶性珪素膜を作製し、その結晶化過程等
を詳細に検討したところ以下の事項が判明した。 (1)プラズマ処理によってニッケルを非晶質珪素膜上
に導入した場合、熱処理を行なう以前に既に、ニッケル
は非晶質珪素膜中のかなりの深さの部分まで侵入してい
る。 (2)結晶の初期核発生は、ニッケルを導入した表面か
ら発生している。 (3)蒸着法でニッケルを非晶質珪素膜上に成膜した場
合であっても、プラズマ処理を行なった場合と同様に結
晶化が起こる。
されたニッケルが全て効果的に機能していないというこ
とが結論される。そして、「必要なのは非晶質珪素膜の
表面近傍に極微量のニッケルが導入されればよい」とい
うことが結論される。
ッケルを導入する方法、言い換えるならば、非晶質珪素
膜の表面近傍のみ結晶化を助長する触媒元素を極微量導
入する方法としては、蒸着法を挙げることができるが、
蒸着法は制御性が悪く、触媒元素の導入量を厳密に制御
することが困難であるという問題がある。
用いた600℃以下の熱処理による結晶性を有する薄膜
珪素半導体の作製において、 (1)触媒元素の量を制御して導入する。 (2)生産性の高い方法とする。 といった要求を満たすことを目的とする。
足するために以下の構成を用いることを主要な構成とす
る。 「触媒元素を含む溶液を非晶質珪素膜表面に塗布し、こ
のことによって、触媒元素の導入を行なう」
る。 (a)溶液中における触媒元素濃度は、予め厳密に制御
することが可能である。 (b)溶液と非晶質珪素膜の表面とが接触していれば、
触媒元素の非晶質珪素への導入量は、溶液中における触
媒元素の濃度によって決まる。 (c)非晶質珪素膜の表面に吸着する触媒元素が主に結
晶化に寄与することとなるので、必要最小限度の濃度で
触媒元素を導入できる。
含有させた溶液を塗布する方法としては、溶液として硝
酸塩、酢酸塩、硫酸塩の水溶液を用いる方法を挙げるこ
とができる。この場合、非晶質珪素膜に直接上記溶液を
塗布すると、溶液が弾かれてしまうので、100Å以下
の薄い酸化膜をまず形成し、その上に触媒元素を含有さ
せた溶液を塗布することで、均一に溶液を塗布すること
ができる。また、界面活性剤の如き材料を溶液中に添加
する方法により濡れを改善する方法も有効である。
溶液を用いることで、非晶質珪素膜表面に直接塗布する
ことができる。この場合にはレジスト塗布の際に使用さ
れている密着剤の如き材料を予め塗布することは有効で
ある。しかし塗布量が多過ぎる場合には逆に非晶質珪素
中への触媒元素の添加を妨害してしまうために注意が必
要である。
の種類にも依存するが、概略の傾向としてはニッケル量
として溶液に対して200ppm以下、好ましくは50
ppm以下(重量換算)とすることが望ましい。これ
は、結晶化終了後における膜中のニッケル濃度や耐フッ
酸性に鑑みて決められる値である。
布することにより、結晶成長を選択的に行なうことがで
きる。特にこの場合、溶液が塗布されなかった領域に向
かって、溶液が塗布された領域から珪素膜の面に平行な
方向に結晶成長を行なすことができる。この珪素膜の面
に平行な方向に結晶成長が行なわれた領域を本明細書中
においては横方向に結晶成長した領域ということとす
る。
域は、触媒元素の濃度を低いことが確かめられている。
半導体装置の活性層領域として、結晶性珪素膜を利用す
ることは有用であるが、活性層領域中における不純物の
濃度は一般に低い方が好ましい。従って、上記横方向に
結晶成長が行なわれた領域を用いて半導体装置の活性層
領域を形成することはデバイス作製上有用である。
ルを用いた場合に最も顕著な効果を得ることができる
が、その他利用できる触媒元素の種類としては、好まし
くはNi、Pd、Pt、Cu、Ag、Au、In、S
n、Pd、Sn、Pd、P、As、Sbを利用すること
ができる。また、VIII族元素、IIIb、IVb、Vb元素から
選ばれた一種または複数種類の元素を利用することもで
きる。
する珪素膜を形成する例を示す。まず図1を用いて、触
媒元素(ここではニッケルを用いる)を導入するところ
までを説明する。本実施例においては、基板としてコー
ニング7059ガラスを用いる。またその大きさは10
0mm×100mmとする。
LPCVD法によってアモルファス状のシリコン膜を1
00〜1500Å形成する。ここでは、プラズマCVD
法によって非晶質珪素膜12を1000Åの厚さに成膜
する。(図1(A))
めにフッ酸処理を行い、その後酸化膜13を10〜50
Åに成膜する。汚れが無視できる場合には、この工程を
省略しても良いことは言うまでもなく、酸化膜13の代
わりに自然酸化膜をそのまま用いれば良い。なお、この
酸化膜13は極薄のため正確な膜厚は不明であるが、2
0Å程度であると考えられる。ここでは酸素雰囲気中で
のUV光の照射により酸化膜13を成膜する。成膜条件
は、酸素雰囲気中においてUVを5分間照射することに
おって行なった。この酸化膜13の成膜方法としては、
熱酸化法を用いるのでもよい。また過酸化水素による処
理によるものでもよい。
酢酸塩溶液を塗布する工程で、非晶質珪素膜の表面全体
に酢酸塩溶液を行き渡らせるため、即ち濡れ性の改善の
為のものである。例えば、非晶質珪素膜の表面に直接酢
酸塩溶液を塗布した場合、非晶質珪素が酢酸塩溶液を弾
いてしまうので、非晶質珪素膜の表面全体にニッケルを
導入することができない。即ち、均一な結晶化を行うこ
とができない。
た酢酸塩溶液を作る。ニッケルの濃度は100ppmと
する。そしてこの酢酸塩溶液を非晶質珪素膜12上の酸
化膜13の表面に2ml滴下し、この状態を5分間保持
する。そしてスピナーを用いてスピンドライ(2000
rpm、60秒)を行う。(図1(C)、(D))
0ppm以上であれば実用になる。また溶液としては、
塩酸塩、硝酸塩、硫酸塩を用いることができる。また、
有機系のオクチル酸塩やトルエン溶液を用いることもで
きる。この場合は、酸化膜13は不要であり、直接非晶
質珪素膜上に触媒元素を導入することができる。
持させる。この保持させる時間によっても、最終的に珪
素膜12中に含まれるニッケルの濃度を制御することが
できるが、最も大きな制御因子は溶液の濃度である。
おいて550度、4時間の加熱処理を行う。この結果、
基板11上に形成された結晶性を有する珪素薄膜12を
得ることができる。
うことができるが、温度が低いと加熱時間を長くしなけ
らばならず、生産効率が低下する。また、550度以上
とすると基板として用いるガラス基板の耐熱性の問題が
表面化してしまう。
作製方法において、1200Åの酸化珪素膜を選択的に
設け、この酸化珪素膜をマスクとして選択的にニッケル
を導入する例である。
示す。まず、ガラス基板(コーニング7059、10c
m角)上にマスクとなる酸化珪素膜21を1000Å以
上、ここでは1200Åの厚さに成膜する。この酸化珪
素膜21の膜厚については、発明者等の実験によると5
00Åでも問題がないことを確認しており、膜質が緻密
であれば更に薄くても良いと思われる。
によって、必要とするパターンに酸化珪素膜21をパー
ニングする。そして、酸素雰囲気中における紫外線の照
射で薄い酸化珪素膜20を成膜する。この酸化珪素膜2
0の作製は、酸素雰囲気中でUV光を5分間照射するこ
とによって行なわれる。なおこの酸化珪素膜20の厚さ
は20〜50Å程度と考えられる(図2(B))。尚、
この濡れ性を改善するための酸化珪素膜については、溶
液とパターンのサイズが合致した場合には、マスクの酸
化珪素膜の親水性のみによっても丁度よく添加される場
合がある。しかしながらこの様な例は特殊であり、一般
的には酸化珪素膜20を使用したほうが安全である。
0ppmのニッケルを含有した酢酸塩溶液を5ml滴下
(10cm角基板の場合)する。またこの際、スピナー
で50rpmで10秒のスピンコートを行い、基板表面
全体に均一な水膜を形成させる。さらにこの状態で、5
分間保持した後スピナーを用いて2000rpm、60
秒のスピンドライを行う。なおこの保持は、スピナー上
において0〜100rpmの回転をさせながら行なって
もよい。(図2(C))
加熱処理を施すことにより、非晶質珪素膜12の結晶化
を行う。この際、ニッケルが導入された部分22の領域
から23で示されるように、ニッケルが導入されなった
領域へと横方向に結晶成長が行われる。
距離(μm)と、酢酸塩溶液中に含有されるニッケル濃
度(ppm)との関係を図3に示す。なお、図3に示さ
れるデータにおいては、ニッケルを含有する酢酸塩を塗
布した後の保持時間を5分間とした。
を100ppm以上とすることによって、25μm以上
の成長距離を得ることができる。
度が10ppmであっても、10μm程度の横方向成長
を得られることが予想される。
塩を塗布した後の保持時間を5分間とした場合である
が、この保持時間によっても横成長距離は変化する。
合において、保持時間を1分以下とした場合には、保持
時間が長い程、横方向への結晶成長を長くすることがで
きる。しかし、保持時間を1分以上とした場合には、僅
かづつ成長距離が長くなるだけで、顕著な違いを得るこ
とができない。
合においては、保持時間が5分までは、その時間が横方
向への結晶成長距離に比例するが、5分以上では飽和す
る傾向が見られる。
長くすると僅かづつであるが、さらに横方向への結晶成
長距離を大きくすることができる。尚、これらの保持時
間は温度が変化するとその平衡に到達する時間が大きく
変わるため、温度を管理する必要があることを付加して
おく。また、熱処理時間の温度を高くする、あるいは熱
処理時間を長くすることによっても全体として横方向へ
の結晶成長を大きくすることができる。
有した酢酸塩溶液を用いてニッケルを導入し、550
℃、4時間の熱処理において、結晶化を行った場合の結
晶化後における珪素膜中のニッケル濃度をSIMS(2
次イオン質量分析)によって調べたデータである。
が直接導入された領域におけるニッケルの濃度を示す。
また図5は、図2の23で示されるように22の領域か
ら横方向に結晶成長した領域におけるニッケルの濃度で
ある。
成長した領域のニッケル濃度は、直接ニッケルを導入し
た領域に比較してその濃度が約1桁小さいことが分か
る。
ても、酢酸塩溶液中におけるニッケルの濃度を10pp
mとすれば、結晶化させた珪素膜中におけるニッケル濃
度を1018cm-3レベルに抑えられることが分かる
ニッケル濃度を10ppmとし、加熱処理温度を550
℃以上、加熱処理時間を4時間以上とした場合における
結晶性珪素膜の横成長領域のニッケル濃度は1017cm
-3レベル以下に抑えられることが結論される。
された結晶珪素膜は、耐フッ酸性が良好であるという特
徴がある。本発明者らによる知見によれば、ニッケルを
プラズマ処理で導入し、結晶化させた結晶性珪素膜は、
耐フッ酸性が低い。
層間絶縁膜として機能する酸化珪素膜を形成し、しかる
後に電極の形成のために穴開け工程を経て、電極を形成
をする作業が必要とされる場合がある。このような場
合、酸化珪素膜をバッファフッ酸によって除去する工程
が普通採用される。しかしながら、結晶性珪素膜の耐フ
ッ酸性が低い場合、酸化珪素膜のみを取り除くことは困
難であり、結晶性珪素膜をもエッチングしてしまうとい
う問題がある。
を有している場合、酸化珪素膜と結晶性珪素膜のエンチ
ッングレートの違い(選択比)を大きくとることができ
るので、酸化珪素膜のみを選択的の除去でき、作製工程
上極めて有意なものとなる。
利用して作製した結晶性珪素膜を用いて、アクティブマ
トリックス型の液晶表示装置の各画素部分に設けられる
TFTを作製する例を示す。なお、TFTの応用範囲と
しては、液晶表示装置のみではなく、一般に言われる薄
膜集積回路に利用できることはいうまでもない。
まずガラス基板上に下地の酸化珪素膜(図示せず)を2
000Åの厚さに成膜する。この酸化珪素膜は、ガラス
基板からの不純物の拡散を防ぐために設けられる。
方法で1000Åの厚さに成膜する。そして、自然酸化
膜を取り除くためのフッ酸処理の後、薄い酸化膜20を
20Å程度の厚さに酸素雰囲気でのUV光の照射によっ
て成膜する。
酸塩溶液を塗布し、5分間保持し、スピナーを用いてス
ピンドライを行う。その後バッファフッ酸によって酸化
珪素膜20と21を取り除き、550度、4時間の加熱
によって、珪素膜100を結晶化させる。(ここまでは
実施例1に示した作製方法と同じ)
て、島状の領域104を形成する。この島状の領域10
4はTFTの活性層を構成する。そして、厚さ200〜
1500Å、ここでは1000Åの酸化珪素105を形
成する。この酸化珪素膜はゲイト絶縁膜としても機能す
る。(図6(A))
要である。ここでは、TEOSを原料とし、酸素ととも
に基板温度150〜600℃、好ましくは300〜45
0℃で、RFプラズマCVD法で分解・堆積した。TE
OSと酸素の圧力比は1:1〜1:3、また、圧力は
0.05〜0.5torr、RFパワーは100〜25
0Wとした。あるいはTEOSを原料としてオゾンガス
とともに減圧CVD法もしくは常圧CVD法によって、
基板温度を350〜600℃、好ましくは400〜55
0℃として形成した。成膜後、酸素もしくはオゾンの雰
囲気で400〜600℃で30〜60分アニールした。
長248nm、パルス幅20nsec)あるいはそれと
同等な強光を照射することで、シリコン領域104の結
晶化を助長さえてもよい。特に、赤外光を用いたRTA
(ラピットサーマルアニール)は、ガラス基板を加熱せ
ずに、珪素のみを選択的に加熱することができ、しかも
珪素と酸化珪素膜との界面における界面準位を減少させ
ることができるので、絶縁ゲイト型電界効果半導体装置
の作製においては有用である。
ニウム膜を電子ビーム蒸着法によって形成して、これを
パターニングし、ゲイト電極106を形成する。アルミ
ニウムにはスカンジウム(Sc)を0.15〜0.2重
量%ドーピングしておいてもよい。次に基板をpH≒
7、1〜3%の酒石酸のエチレングリコール溶液に浸
し、白金を陰極、このアルミニウムのゲイト電極を陽極
として、陽極酸化を行う。陽極酸化は、最初一定電流で
220Vまで電圧を上げ、その状態で1時間保持して終
了させる。本実施例では定電流状態では、電圧の上昇速
度は2〜5V/分が適当である。このようにして、厚さ
1500〜3500Å、例えば、2000Åの陽極酸化
物109を形成する。(図6(B))
ーピング法ともいう)によって、各TFTの島状シリコ
ン膜中に、ゲイト電極部をマスクとして自己整合的に不
純物(燐)を注入した。ドーピングガスとしてはフォス
フィン(PH3 )を用いた。ドーズ量は、1〜4×10
15cm-2とする。
キシマーレーザー(波長248nm、パルス幅20ns
ec)を照射して、上記不純物領域の導入によって結晶
性の劣化した部分の結晶性を改善させる。レーザーのエ
ネルギー密度は150〜400mJ/cm2 、好ましく
は200〜250mJ/cm2 である。こうして、N型
不純物(燐)領域108、109を形成する。これらの
領域のシート抵抗は200〜800Ω/□であった。
りに、フラッシュランプを使用して短時間に1000〜
1200℃(シリコンモニターの温度)まで上昇させ、
試料を加熱する、いわゆるRTA(ラピッド・サーマル
・アニール)(RTP、ラピット・サーマル・プロセス
ともいう)を用いてもよい。
TEOSを原料として、これと酸素とのプラズマCVD
法、もしくはオゾンとの減圧CVD法あるいは常圧CV
D法によって酸化珪素膜を厚さ3000Å形成する。基
板温度は250〜450℃、例えば、350℃とする。
成膜後、表面の平坦性を得るため、この酸化珪素膜を機
械的に研磨する。さらに、スパッタ法によってITO被
膜を堆積し、これをパターニングして画素電極111と
する。(図6(D))
て、図1(E)に示すようにTFTのソース/ドレイン
にコンタクトホールを形成し、クロムもしくは窒化チタ
ンの配線112、113を形成し、配線113は画素電
極111に接続させる。
結晶性珪素膜は、酸化珪素膜に比較してバッファフッ酸
に対する選択性が低いので、上記コンタクトホールの形
成工程において、エッチングされてしまうことが多かっ
た。
濃度で水溶液を用いてニッケルを導入した場合には、耐
フッ酸性が高いので、上記コンタクトホールの形成が安
定して再現性よく行なうことができる。
1〜2時間アニールして、シリコンの水素化を完了す
る。このようにして、TFTが完成する。そして、同時
に作製した多数のTFTをマトリクス状に配列せしめて
アクティブマトリクス型液晶表示装置として完成する。
に存在するニッケルの濃度は、1×1018cm-3程度あ
るいはそれ以下であると考えられる。
部分を結晶化させた例を示したが、実施例2に示すよう
にニッケルを選択的に導入し、その部分から横方向(基
板に平行な方向)に結晶成長した領域を用いて電子デバ
イスを形成してもよい。この場合、デバイスの活性層領
域におけるニッケル濃度をさらに低くすることができ、
デバイスの電気的安定性や信頼性の上から極めて好まし
い構成とすることができる。
によって、ニッケルの濃度を精密に制御して添加できる
ようになり、結晶性珪素膜を用いた信頼性の高い電子デ
バイスを提供できる。
距離との関係を示す。
示す。
した領域におけるニッケル濃度を示す。
Claims (14)
- 【請求項1】 非晶質珪素膜上に該珪素膜の結晶化を助
長する触媒元素を含有させた溶液を塗布する工程と、 前記非晶質珪素膜を加熱処理することによる結晶化させ
る工程と、 を有する半導体作製方法。 - 【請求項2】 非晶質珪素膜上に酸化膜を形成する工程
と、 前記酸化膜上に珪素膜の結晶化を助長する触媒元素を含
有させた溶液を塗布する工程と、 前記非晶質珪素膜を加熱処理することにより結晶化させ
る工程と、 を有する半導体作製方法。 - 【請求項3】 非晶質珪素膜上に100Å以下の酸化膜
を形成する工程と、 前記酸化膜上に珪素膜の結晶化を助長する触媒元素を含
有させた溶液を塗布する工程と、 前記非晶質珪素膜を加熱処理することにより結晶化させ
る工程と、 を有する半導体作製方法。 - 【請求項4】 非晶質珪素膜上に該珪素膜の結晶化を助
長する触媒元素を含有させた溶液を選択的に塗布する工
程と、 前記非晶質珪素膜を加熱処理することにより前記選択的
に溶液が塗布された領域から、前記溶液が塗布されなか
った領域に向かって結晶成長を行なう工程と、 を有する半導体作製方法。 - 【請求項5】 請求項1または請求項2または請求項3
または請求項4において、 触媒元素としてNiを用いることを特徴とする半導体作
製方法。 - 【請求項6】 請求項1または請求項2または請求項3
または請求項4において、 触媒元素として、Ni、Pd、Pt、Cu、Ag、A
u、In、Sn、Pd、Sn、Pd、P、As、Sbか
ら選ばれた一種または複数種類の元素をを用いることを
特徴とする半導体作製方法。 - 【請求項7】 請求項1または請求項2または請求項3
または請求項4において、 触媒元素として、VIII族、IIIb族、IVb族、Vb族元素か
ら選ばれた一種または複数種類の元素を利用することを
特徴とする半導体作製方法。 - 【請求項8】 請求項1または請求項2または請求項3
または請求項4において、溶液中の触媒元素の濃度を5
0ppm以下とすることを特徴とする半導体作製方法。 - 【請求項9】 請求項1または請求項2または請求項3
または請求項4において、溶液中の触媒元素の濃度を1
0ppm以下とすることを特徴とする半導体作製方法。 - 【請求項10】請求項1または請求項2または請求項3
または請求項4において、溶液中の触媒元素の濃度を変
化することによって、結晶性珪素膜中に含まれる触媒元
素の濃度を制御することを特徴とする半導体作製方法。 - 【請求項11】請求項1または請求項2または請求項3
または請求項4において、触媒元素を含む溶液を塗布し
た後、所定の時間その状態を保持し、しかる後に不要な
溶液を除去することを特徴とする半導体作製方法。 - 【請求項12】請求項10において、所定の時間を変化
させることによって、結晶珪素膜中に含まれる触媒元素
の濃度を制御することを特徴とする半導体作製方法。 - 【請求項13】非晶質珪素膜上に酸化膜を形成する工程
と、 前記酸化膜上に珪素膜のNiを10〜200ppm以下
含有させた酢酸塩溶液を滴下する工程と、 該工程の後その状態を0.5分以上保持する工程と、 スピナーを用いて不要な溶液を除去する工程と、 前記非晶質珪素膜を加熱処理することにより結晶化させ
る工程と、 を有する半導体作製方法。 - 【請求項14】非晶質珪素膜上に直接あるいは間接に前
記非晶質珪素膜の結晶化を助長する触媒元素を含む溶液
を選択的に塗布する工程と、 加熱処理を施すことにより、前記選択的に溶液が塗布さ
れた第1の領域を結晶成長させるとともに、該領域から
前記選択的に溶液は塗布されなかった第2の領域へと結
晶成長を行なう工程と、 を有し、 前記第1の領域の結晶珪素膜中における触媒元素の濃度
に比較して、前記第2の結晶性珪素膜中における触媒元
素の濃度が低いことを特徴とする半導体作製方法。
Priority Applications (20)
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JP29463393A JP3431033B2 (ja) | 1993-10-29 | 1993-10-29 | 半導体作製方法 |
TW083109844A TW264575B (ja) | 1993-10-29 | 1994-10-24 | |
US08/329,644 US5643826A (en) | 1993-10-29 | 1994-10-25 | Method for manufacturing a semiconductor device |
CNB991069544A CN1143362C (zh) | 1993-10-29 | 1994-10-28 | 制造半导体器件的方法 |
CN94112820A CN1054943C (zh) | 1993-10-29 | 1994-10-28 | 制造半导体器件的方法 |
KR1019940028037A KR100273827B1 (ko) | 1993-10-29 | 1994-10-29 | 반도체 장치 |
EP01116025A EP1158580A3 (en) | 1993-10-29 | 1994-10-31 | Method of crystallizing a silicon layer |
EP94307986A EP0651431B1 (en) | 1993-10-29 | 1994-10-31 | Method of crystallizing a silicon layer |
DE69430097T DE69430097T2 (de) | 1993-10-29 | 1994-10-31 | Verfahren zum Kristallisieren einer Siliziumschicht |
US08/430,623 US5923962A (en) | 1993-10-29 | 1995-04-28 | Method for manufacturing a semiconductor device |
US08/633,307 US6335541B1 (en) | 1993-10-29 | 1996-04-15 | Semiconductor thin film transistor with crystal orientation |
US08/928,514 US6285042B1 (en) | 1993-10-29 | 1997-09-12 | Active Matry Display |
KR1019970069468A KR100273831B1 (ko) | 1993-10-29 | 1997-12-17 | 반도체 장치의 제조 방법 |
CNB981209785A CN1149639C (zh) | 1993-10-29 | 1998-10-12 | 半导体器件 |
KR1020000013018A KR100273833B1 (ko) | 1993-10-29 | 2000-03-15 | 반도체 장치 |
KR1020000013017A KR100297315B1 (ko) | 1993-10-29 | 2000-03-15 | 반도체 장치의 제조방법 |
US10/026,802 US6998639B2 (en) | 1993-10-29 | 2001-12-27 | Method for manufacturing a semiconductor device |
US11/322,660 US20060131583A1 (en) | 1993-10-29 | 2006-01-03 | Method for manufacturing a semiconductor device |
US12/219,026 US7998844B2 (en) | 1993-10-29 | 2008-07-15 | Method for manufacturing a semiconductor device |
US13/209,861 US20120034766A1 (en) | 1993-10-29 | 2011-08-15 | Method for manufacturing a semiconductor device |
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