JPH07120832B2 - Semiconductor laser device - Google Patents
Semiconductor laser deviceInfo
- Publication number
- JPH07120832B2 JPH07120832B2 JP61189057A JP18905786A JPH07120832B2 JP H07120832 B2 JPH07120832 B2 JP H07120832B2 JP 61189057 A JP61189057 A JP 61189057A JP 18905786 A JP18905786 A JP 18905786A JP H07120832 B2 JPH07120832 B2 JP H07120832B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- recess
- semiconductor laser
- semiconductor layer
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- Semiconductor Lasers (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体レーザ装置に関するものである。TECHNICAL FIELD The present invention relates to a semiconductor laser device.
従来の技術 近年、OEIC（光電子集積回路）デバイスの研究が盛んに
行なわれている。その中で電子回路形成時の基板の平坦
性を確保するために、基板にあらかじめ凹部を設け、そ
の凹部内に発光素子（例えば半導体レーザ）を形成する
方法がある。2. Description of the Related Art In recent years, OEIC (Optical-Electronic Integrated Circuit) devices have been actively researched. Among them, in order to secure the flatness of the substrate at the time of forming an electronic circuit, there is a method of forming a recess in the substrate in advance and forming a light emitting element (for example, a semiconductor laser) in the recess.
発明が解決しようとする問題点 しかしながら、第２図ａで示されるように、このような
凹部に液相エピタキシャル法により成長を行なうと、凹
部中央には両側から成長してきた成長層の重なり合いの
ために平坦とはならず、大きな不連続部分が生じる。こ
のため凹部中央に平坦な活性層を有する半導体レーザ装
置を形成するのは極めて困難である。Problems to be Solved by the Invention However, as shown in FIG. 2A, when the liquid phase epitaxial method is used to grow such a recess, the growth layers grown from both sides are overlapped in the center of the recess. It is not flat and a large discontinuity occurs. Therefore, it is extremely difficult to form a semiconductor laser device having a flat active layer in the center of the recess.
問題点を解決するための手段 上記問題点を解決するために、本発明の半導体レーザ装
置は、基板の表面に凹部が形成され、前記凹部内に上面
が平坦な突起部を有する一導電型の第一の半導体層が形
成され、前記第一の半導体層上に反対導電型の第二の半
導体層が形成され、前記第二の半導体層の前記突起部直
上に少なくとも前記第一の半導体層の表面に達する深さ
の溝が形成され、かつ前記突起部直上に平坦な活性層を
含むダブルヘテロ構造の各層が形成されて構成されてい
る。Means for Solving the Problems In order to solve the above problems, the semiconductor laser device of the present invention is a semiconductor laser device of one conductivity type in which a recess is formed on the surface of a substrate and a projection having a flat upper surface is formed in the recess. A first semiconductor layer is formed, a second semiconductor layer of the opposite conductivity type is formed on the first semiconductor layer, and at least the first semiconductor layer of the second semiconductor layer is formed immediately above the protruding portion. A groove having a depth reaching the surface is formed, and each layer of the double hetero structure including a flat active layer is formed immediately above the protrusion.
作用 上記の構成により第２図ｂに示すように突起部を成長の
種として層が形成されるので突起部上又はその近傍には
平坦な層を形成することができ、凹部内に平坦な活性層
を有する半導体レーザを形成することが可能となる。Action With the above structure, as shown in FIG. 2b, a layer is formed by using the protrusion as a seed for growth. Therefore, a flat layer can be formed on or near the protrusion, and a flat active layer can be formed in the recess. It becomes possible to form a semiconductor laser having layers.
実施例 以下、本発明の一実施例について第３図および第１図を
参照しながら説明する。Embodiment An embodiment of the present invention will be described below with reference to FIGS. 3 and 1.
（100）面を有する半絶縁性GaAs基板１上に＜011＞方向
に幅400μｍ、深さ７μｍの凹部をエッチングにより形
成する。この凹部内表面にｐ型GaAs層２の成長を行なっ
た後、高さ２μｍ、幅15μｍのメサ2aをエッチングによ
り形成する（第３図ａ）。このｐ型GaAs層２上にｎ型Ga
As層３の成長を、メサ上の膜厚が１μｍとなるように行
なう。メサ上の成長表面は平坦な面となる。このウエハ
ーに第３図ｂに示すように、選択エッチングにより幅20
μｍ、高さ1.5μｍの平行なリッジ3a,3bを５μｍをへだ
てて形成する。リッジ3a,3bを形成したウエハー上に液
相エピタキシャル法によりｐ型GaAlAsの第１クラッド層
４、GaAlAsの活性層５、ｎ型GaAlAsの第２クラッド層６
およびｎ型GaAsコンタクト層７からなるダブルヘテロの
レーザ構造を形成する（第３図ｃ）。溝およびリッジ3
a,3b上の活性層は平坦となる。A recess having a width of 400 μm and a depth of 7 μm is formed in the <011> direction on a semi-insulating GaAs substrate 1 having a (100) plane by etching. After growing the p-type GaAs layer 2 on the inner surface of the recess, a mesa 2a having a height of 2 μm and a width of 15 μm is formed by etching (FIG. 3A). N-type Ga is formed on the p-type GaAs layer 2.
The As layer 3 is grown so that the film thickness on the mesa becomes 1 μm. The growth surface on the mesa becomes a flat surface. As shown in FIG. 3b, this wafer is formed with a width of 20 by selective etching.
Parallel ridges 3a and 3b having a height of 1.5 μm and a height of 5 μm are formed. A p-type GaAlAs first clad layer 4, a GaAlAs active layer 5, and an n-type GaAlAs second clad layer 6 are formed on the wafer having the ridges 3a and 3b formed thereon by a liquid phase epitaxial method.
A double-hetero laser structure consisting of and n-type GaAs contact layer 7 is formed (FIG. 3c). Ditch and ridge 3
The active layers on a and 3b are flat.
次に第１図に示すようにｎ型GaAsコンタクト層７上にｎ
側オーミック電極８、ｐ型GaAs2の表面にｐ側オーミッ
ク電極９を形成する工程を経て本発明の半導体レーザ装
置が完成する。Next, as shown in FIG. 1, n is formed on the n-type GaAs contact layer 7.
The semiconductor laser device of the present invention is completed through the steps of forming the p-side ohmic electrode 9 on the surface of the side ohmic electrode 8 and the p-type GaAs 2.
発明の効果 以上のように本発明は、基板上に設けられた凹部の中に
突起が形成され、その突起上又はその近傍に活性層が形
成されることにより、前記凹部内にも液相エピタキシャ
ル法により、平坦な活性層を持つ半導体レーザを形成す
ることができ、その実用的価値は大なるものがある。EFFECTS OF THE INVENTION As described above, according to the present invention, the protrusion is formed in the recess provided on the substrate, and the active layer is formed on or near the protrusion, so that the liquid phase epitaxial film is also formed in the recess. By the method, a semiconductor laser having a flat active layer can be formed, and its practical value is great.
第１図は本発明の一実施例における半導体レーザ装置の
構造図、第２図a,bはそれぞれ従来の凹部での成長、本
発明による凹部での成長を示す図、第３図ａ〜ｃは本発
明の実施例の作製工程を示す断面図である。 １……半絶縁性GaAs基板、２……ｐ型GaAs層、３……ｎ
型GaAsブロッキング層、４……ｐ型GaAlAsクラッド層、
５……GaAlAs活性層、６……ｎ型GaAlAsクラッド層、７
……ｎ型GaAsコンタクト層、８……ｎ側オーミック電
極、９……ｐ側オーミック電極。FIG. 1 is a structural view of a semiconductor laser device according to an embodiment of the present invention, FIGS. 2a and 2b are views showing conventional growth in a recess and growth in a recess according to the present invention, and FIGS. [FIG. 3] is a sectional view showing a manufacturing process of an example of the present invention. 1 ... semi-insulating GaAs substrate, 2 ... p-type GaAs layer, 3 ... n
-Type GaAs blocking layer, 4 ... p-type GaAlAs cladding layer,
5 ... GaAlAs active layer, 6 ... n-type GaAlAs cladding layer, 7
... n-type GaAs contact layer, 8 ... n-side ohmic electrode, 9 ... p-side ohmic electrode.
Claims (1)
に上面が平坦な突起部を有する一導電型の第一の半導体
層が形成され、前記第一の半導体層上に反対導電型の第
二の半導体層が形成され、前記第二の半導体層の前記突
起部直上に少なくとも前記第一の半導体層の表面に達す
る深さの溝が形成され、かつ前記突起部直上に平坦な活
性層を含むダブルヘテロ構造の各層が形成されているこ
とを特徴とする半導体レーザ装置。1. A first-conductivity-type first semiconductor layer having a recess formed on the surface of a substrate, and a protrusion having a flat upper surface is formed in the recess, and an opposite conductivity type is formed on the first semiconductor layer. A second semiconductor layer is formed, a groove having a depth reaching at least the surface of the first semiconductor layer is formed immediately above the protruding portion of the second semiconductor layer, and a flat active surface is formed directly above the protruding portion. A semiconductor laser device, wherein each layer of a double hetero structure including layers is formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61189057A JPH07120832B2 (en) | 1986-08-12 | 1986-08-12 | Semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61189057A JPH07120832B2 (en) | 1986-08-12 | 1986-08-12 | Semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6344790A JPS6344790A (en) | 1988-02-25 |
| JPH07120832B2 true JPH07120832B2 (en) | 1995-12-20 |
Family
ID=16234567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61189057A Expired - Lifetime JPH07120832B2 (en) | 1986-08-12 | 1986-08-12 | Semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07120832B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4958139B2 (en) * | 2006-02-14 | 2012-06-20 | 日置電機株式会社 | Displacement magnifying mechanism with displacement final output end and processing apparatus provided with the displacement magnifying mechanism |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6045082A (en) * | 1983-08-23 | 1985-03-11 | Agency Of Ind Science & Technol | Semiconductor laser integrated circuit device |
-
1986
- 1986-08-12 JP JP61189057A patent/JPH07120832B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6344790A (en) | 1988-02-25 |
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