JPH0672080B2 - Ｓｉ基板上のＧａＡｓエピタキシャル層の有機金属化学蒸着法によるデルタードーピング層形成方法 - Google Patents
Ｓｉ基板上のＧａＡｓエピタキシャル層の有機金属化学蒸着法によるデルタードーピング層形成方法Info
- Publication number
- JPH0672080B2 JPH0672080B2 JP3192166A JP19216691A JPH0672080B2 JP H0672080 B2 JPH0672080 B2 JP H0672080B2 JP 3192166 A JP3192166 A JP 3192166A JP 19216691 A JP19216691 A JP 19216691A JP H0672080 B2 JPH0672080 B2 JP H0672080B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- delta
- substrate
- doping
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims description 37
- 239000000758 substrate Substances 0.000 title claims description 35
- 238000000034 method Methods 0.000 title claims description 29
- 238000005229 chemical vapour deposition Methods 0.000 title claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 description 11
- 239000002019 doping agent Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H01L21/205—
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR11523/1991 | 1991-07-08 | ||
| KR1019910011523A KR950002178B1 (ko) | 1991-07-08 | 1991-07-08 | 실리콘기판상에 성장된 GaAs에피택셜층의 유기금속화학증착법에 의한 델타-도핑형성방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0524978A JPH0524978A (ja) | 1993-02-02 |
| JPH0672080B2 true JPH0672080B2 (ja) | 1994-09-14 |
Family
ID=19316903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3192166A Expired - Lifetime JPH0672080B2 (ja) | 1991-07-08 | 1991-07-31 | Ｓｉ基板上のＧａＡｓエピタキシャル層の有機金属化学蒸着法によるデルタードーピング層形成方法 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH0672080B2 (ko) |
| KR (1) | KR950002178B1 (ko) |
-
1991
- 1991-07-08 KR KR1019910011523A patent/KR950002178B1/ko not_active IP Right Cessation
- 1991-07-31 JP JP3192166A patent/JPH0672080B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR950002178B1 (ko) | 1995-03-14 |
| KR930003245A (ko) | 1993-02-24 |
| JPH0524978A (ja) | 1993-02-02 |
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