JPH065742A - 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法 - Google Patents

半導体装置、その封止に用いられる樹脂および半導体装置の製造方法

Info

Publication number
JPH065742A
JPH065742A JP4162804A JP16280492A JPH065742A JP H065742 A JPH065742 A JP H065742A JP 4162804 A JP4162804 A JP 4162804A JP 16280492 A JP16280492 A JP 16280492A JP H065742 A JPH065742 A JP H065742A
Authority
JP
Japan
Prior art keywords
resin
semiconductor device
curing
weight
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4162804A
Other languages
English (en)
Japanese (ja)
Inventor
Shinobu Takahama
忍 高浜
Akinobu Tamaoki
明信 玉置
Satoshi Hirakawa
聡 平川
Hitoshi Yamano
仁志 山野
Teruki Hiyougatani
輝喜 兵ヶ谷
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4162804A priority Critical patent/JPH065742A/ja
Priority to EP93109684A priority patent/EP0575889A2/en
Priority to US08/077,762 priority patent/US5430330A/en
Publication of JPH065742A publication Critical patent/JPH065742A/ja
Priority to US08/406,058 priority patent/US5539218A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/22—Secondary treatment of printed circuits
    • H05K3/28—Applying non-metallic protective coatings
    • H05K3/285—Permanent coating compositions

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Epoxy Resins (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP4162804A 1992-06-22 1992-06-22 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法 Pending JPH065742A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP4162804A JPH065742A (ja) 1992-06-22 1992-06-22 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法
EP93109684A EP0575889A2 (en) 1992-06-22 1993-06-17 Semiconductor device, resin for sealing same and method of fabricating same
US08/077,762 US5430330A (en) 1992-06-22 1993-06-18 Semiconductor device, resin for sealing same and method of fabricating same
US08/406,058 US5539218A (en) 1992-06-22 1995-03-17 Semiconductor device and resin for sealing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4162804A JPH065742A (ja) 1992-06-22 1992-06-22 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JPH065742A true JPH065742A (ja) 1994-01-14

Family

ID=15761539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4162804A Pending JPH065742A (ja) 1992-06-22 1992-06-22 半導体装置、その封止に用いられる樹脂および半導体装置の製造方法

Country Status (3)

Country Link
US (2) US5430330A (enExample)
EP (1) EP0575889A2 (enExample)
JP (1) JPH065742A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005320479A (ja) * 2004-05-11 2005-11-17 Kyocera Chemical Corp 液状エポキシ樹脂組成物
JP2006114716A (ja) * 2004-10-15 2006-04-27 Mitsubishi Electric Corp 電力用半導体装置
US8138904B2 (en) 2006-08-11 2012-03-20 Bridgestone Corporation Tire internal pressure alarm device
DE102011083927A1 (de) 2010-10-01 2012-07-05 Mitsubishi Electric Corporation Leistungsmodul und Verfahren zur Herstellung desselben
JP2014114426A (ja) * 2012-12-12 2014-06-26 Panasonic Corp 半導体封止用エポキシ樹脂組成物とそれを用いたパワーモジュール
US9548253B2 (en) 2013-09-06 2017-01-17 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing the same
US9917064B2 (en) 2014-10-16 2018-03-13 Mitsubishi Electric Corporation Semiconductor device with a plate-shaped lead terminal

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5589714A (en) * 1992-06-08 1996-12-31 The Dow Chemical Company Epoxy polymer filled with aluminum nitride-containing polymer and semiconductor devices encapsulated with a thermosetting resin containing aluminum nitride particles
JPH07288320A (ja) * 1994-02-21 1995-10-31 Toshiba Corp 半導体装置
US5719225A (en) * 1994-06-13 1998-02-17 Sumitomo Chemical Company, Ltd. Filler-containing resin composition suitable for injection molding and transfer molding
US5601874A (en) * 1994-12-08 1997-02-11 The Dow Chemical Company Method of making moisture resistant aluminum nitride powder and powder produced thereby
DE19722355A1 (de) * 1997-05-28 1998-12-03 Bosch Gmbh Robert Verfahren zur Herstellung elektrischer Baugruppen und elektrische Baugruppe
US6201309B1 (en) * 1997-06-10 2001-03-13 Kabushiki Kaisha Toshiba Thermoplastic material for sealing a semiconductor element, semiconductor device sealed by the material, and the process for manufacturing the same
US6168859B1 (en) 1998-01-29 2001-01-02 The Dow Chemical Company Filler powder comprising a partially coated alumina powder and process to make the filler powder
US6184464B1 (en) * 1998-04-27 2001-02-06 Square D Company Protective containment apparatus for potted electronic circuits
US6452265B1 (en) 2000-01-28 2002-09-17 International Business Machines Corporation Multi-chip module utilizing a nonconductive material surrounding the chips that has a similar coefficient of thermal expansion
US6500891B1 (en) * 2000-05-19 2002-12-31 Loctite Corporation Low viscosity thermally conductive compositions containing spherical thermally conductive particles
DE10038508A1 (de) 2000-08-08 2002-02-21 Bosch Gmbh Robert Elektrische Baugruppe und Verfahren zur Herstellung der elektrischen Baugruppe
JP4101468B2 (ja) * 2001-04-09 2008-06-18 豊田合成株式会社 発光装置の製造方法
JP2002314139A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
DE10121270A1 (de) 2001-04-30 2003-02-06 Epcos Ag Passivierungsmaterial für ein elektrisches Bauteil sowie piezoelektrisches Bauteil in Vielschichtbauweise
DE10162637C1 (de) * 2001-12-20 2003-08-21 Eupec Gmbh & Co Kg Schaltungsanordnung mit elektronischen Bauelementen auf einem isolierenden Trägersubstrat
TW200833752A (en) 2006-10-23 2008-08-16 Lord Corp Highly filled polymer materials
US8330176B2 (en) * 2007-02-13 2012-12-11 3M Innovative Properties Company LED devices having lenses and methods of making same
US20100195322A1 (en) * 2007-07-30 2010-08-05 Sharp Kabushiki Kaisha Light emitting device, illuminating apparatus and clean room equipped with illuminating apparatus
JP5715747B2 (ja) * 2008-09-30 2015-05-13 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置およびその製造方法
WO2010067580A1 (ja) * 2008-12-09 2010-06-17 株式会社ブリヂストン タイヤ内情報取得装置
CN103035587A (zh) * 2012-12-11 2013-04-10 国网智能电网研究院 一种大功率igbt模块封装结构
JP6320331B2 (ja) * 2015-03-16 2018-05-09 三菱電機株式会社 電力用半導体装置
EP3511977B1 (en) 2018-01-16 2021-11-03 Infineon Technologies AG Semiconductor module and method for producing the same
EP3518278A1 (en) 2018-01-30 2019-07-31 Infineon Technologies AG Power semiconductor module and method for producing the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4043969A (en) * 1973-04-23 1977-08-23 National Semiconductor Corporation Casting compound for semiconductor devices
JPH0622265B2 (ja) * 1985-02-20 1994-03-23 株式会社日立製作所 半導体装置
JPS61218151A (ja) * 1985-03-23 1986-09-27 Hitachi Ltd 半導体装置
JPS63108021A (ja) * 1986-10-24 1988-05-12 Hitachi Ltd 樹脂封止型半導体装置
JPH03135039A (ja) * 1989-10-20 1991-06-10 Fuji Electric Co Ltd 半導体装置の製造方法
JP2526747B2 (ja) * 1991-05-21 1996-08-21 信越化学工業株式会社 エポキシ樹脂組成物及び半導体装置

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005320479A (ja) * 2004-05-11 2005-11-17 Kyocera Chemical Corp 液状エポキシ樹脂組成物
JP2006114716A (ja) * 2004-10-15 2006-04-27 Mitsubishi Electric Corp 電力用半導体装置
US8138904B2 (en) 2006-08-11 2012-03-20 Bridgestone Corporation Tire internal pressure alarm device
DE102011083927A1 (de) 2010-10-01 2012-07-05 Mitsubishi Electric Corporation Leistungsmodul und Verfahren zur Herstellung desselben
JP2014114426A (ja) * 2012-12-12 2014-06-26 Panasonic Corp 半導体封止用エポキシ樹脂組成物とそれを用いたパワーモジュール
US9548253B2 (en) 2013-09-06 2017-01-17 Fuji Electric Co., Ltd. Semiconductor device and method of manufacturing the same
US9917064B2 (en) 2014-10-16 2018-03-13 Mitsubishi Electric Corporation Semiconductor device with a plate-shaped lead terminal

Also Published As

Publication number Publication date
US5430330A (en) 1995-07-04
US5539218A (en) 1996-07-23
EP0575889A2 (en) 1993-12-29
EP0575889A3 (enExample) 1994-04-06

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