JPH0654726B2 - Thick film resistor forming composition - Google Patents

Thick film resistor forming composition

Info

Publication number
JPH0654726B2
JPH0654726B2 JP1144385A JP14438589A JPH0654726B2 JP H0654726 B2 JPH0654726 B2 JP H0654726B2 JP 1144385 A JP1144385 A JP 1144385A JP 14438589 A JP14438589 A JP 14438589A JP H0654726 B2 JPH0654726 B2 JP H0654726B2
Authority
JP
Japan
Prior art keywords
weight
resistance value
thick film
film resistor
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP1144385A
Other languages
Japanese (ja)
Other versions
JPH039501A (en
Inventor
希世史 柳沼
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Metal Mining Co Ltd
Original Assignee
Sumitomo Metal Mining Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Mining Co Ltd filed Critical Sumitomo Metal Mining Co Ltd
Priority to JP1144385A priority Critical patent/JPH0654726B2/en
Publication of JPH039501A publication Critical patent/JPH039501A/en
Publication of JPH0654726B2 publication Critical patent/JPH0654726B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Non-Adjustable Resistors (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はセラミツク基板上に厚膜抵抗体を形成するため
の厚膜抵抗体形成用組成物に関する。
The present invention relates to a thick film resistor forming composition for forming a thick film resistor on a ceramic substrate.

〔従来の技術〕[Conventional technology]

軟化点400 〜700 ℃のガラスフリツトに所要の抵抗値に
なるように導電性粉末を混合し、これを有機ビヒクルに
分散したペーストを、アルミナ等のセラミツク基体上
に、スクリーン印刷法や転写法により所要形状に塗布
し、600〜900℃で焼成して、基体上に電子回路部品とし
ての厚膜抵抗体を形成することが行なわれている。
A glass frit with a softening point of 400 to 700 ° C is mixed with conductive powder so that the required resistance value is obtained, and the paste is dispersed in an organic vehicle. A thick film resistor as an electronic circuit component is formed on a substrate by applying it in a shape and baking it at 600 to 900 ° C.

この導電性粉末としてAg、Pdの他にRuO2やパイロクロア
であるPb2Ru2O67、Bi2Ru2O67を使用することにより
抵抗値の安定性を改善したりすることも公知である。
To improve stability of resistance value by using RuO 2 or Pyrochlore Pb 2 Ru 2 O 6 to 7 , Bi 2 Ru 2 O 6 to 7 other than Ag and Pd as the conductive powder. Is also known.

この厚膜抵抗体を使つたチツプ抵抗器などの製造工程で
は、通常厚膜抵抗体の抵抗値を調整した後に、ガラスコ
ートなどの目的の為に600 ℃程度の再加熱工程が入る。
この再加熱工程での抵抗値の変化を考慮して、その前に
トリミングという抵抗値の調整を行なつている。この工
程での抵抗値の変化が大きいと最終の抵抗値を予定の範
囲内に収めることが困難となり、歩留りを悪化させる大
きな原因となつている。
In the manufacturing process of a chip resistor or the like using this thick film resistor, usually, after adjusting the resistance value of the thick film resistor, a reheating process of about 600 ° C. is performed for the purpose of glass coating or the like.
In consideration of the change in the resistance value in this reheating step, the resistance value called trimming is adjusted before that. If there is a large change in the resistance value in this step, it becomes difficult to keep the final resistance value within the expected range, which is a major cause of deterioration in yield.

〔発明が解決しようとする課題〕[Problems to be Solved by the Invention]

本発明はこの再加熱工程での抵抗値の変化率の小さい、
従つて歩留り良く厚膜抵抗体の得られる主として低抵抗
値を有する厚膜抵抗体形成用組成物を提供することを課
題とする。
The present invention has a small change rate of the resistance value in this reheating step,
Therefore, it is an object of the present invention to provide a composition for forming a thick film resistor, which mainly has a low resistance value and can obtain a thick film resistor with a good yield.

〔課題を解決するための手段〕[Means for Solving the Problems]

本発明は、PbO 35〜70重量%、SiO2 15〜40重量%を含
有する組成のガラス粉末10〜50重量%、RuO2、Pb2Ru2O6
7、Bi2Ru2O67の何れか少なくとも一種の粉末5〜40
重量%、有機ビヒクル20〜40重量%、B2O3粉末0.2 〜5.
0 重量%の割合にこれらを含有する厚膜抵抗体形成用組
成物、及びPbO 35〜70重量%、SiO2 15〜40重量%を含
有する組成のガラス粉末10〜50重量%、RuO2を少なくと
も5重量%を含みAg、Pdの一方又は両方とで20〜60重量
%、有機ビヒクル20〜40重量%、B2O3粉末0.2 〜5.0 重
量%の割合にこれらを含有する厚膜抵抗体形成用組成物
を課題を解決するための手段とするものである。
The present invention relates to a glass powder having a composition containing 35 to 70% by weight of PbO and 15 to 40% by weight of SiO 2 , 10 to 50% by weight, RuO 2 , Pb 2 Ru 2 O 6
~ 7 , powder of at least one of Bi 2 Ru 2 O 6 ~ 7 5-40
Wt% organic vehicle 20-40 wt%, B 2 O 3 powder 0.2 to 5.
A thick film resistor-forming composition containing these in an amount of 0% by weight, and 10 to 50% by weight of glass powder having a composition containing 35 to 70% by weight of PbO and 15 to 40% by weight of SiO 2 , and RuO 2 . Thick film resistor containing at least 5 wt% and 20 to 60 wt% with one or both of Ag and Pd, 20 to 40 wt% organic vehicle, and 0.2 to 5.0 wt% B 2 O 3 powder. The forming composition is a means for solving the problems.

固形物粉末は、ビヒクルと混合してペースト状とし、15
0 〜400 メツシユスクリーンを通して基体に塗布するた
め、ペーストが円滑にスクリーンを通過しうるようにす
るため平均粒径10μm以下、好ましくは5μm以下の粉
末として用いる。
Solid powder is mixed with vehicle to form a paste, 15
Since it is applied to the substrate through a mesh screen, it is used as a powder having an average particle size of 10 μm or less, preferably 5 μm or less so that the paste can smoothly pass through the screen.

有機ビヒクルは、従来と同様にターピネオール、ブチル
カルビトールアセテート、トルエンなどの溶媒にエチル
セルロース、メタクリレート樹脂等を溶解したものが用
いられる。
As the organic vehicle, a solvent obtained by dissolving ethyl cellulose, a methacrylate resin, or the like in a solvent such as terpineol, butyl carbitol acetate, or toluene is used as in the conventional case.

上記のガラス粉末、RuO2、Pb2Ru2O67、Bi2Ru2O67
Ag、Pdの粉末、B2O3粉末、有機ビヒクル以外に、従来か
らTCR(抵抗温度係数)を小さくするために用いられ
ているMnO2、Mn2O3、Mn3O4、CuO、Nb2O3、Sb2O3、TiO2
を5重量%以内で添加することもできる。
The above glass powder, RuO 2, Pb 2 Ru 2 O 6 ~ 7, Bi 2 Ru 2 O 6 ~ 7,
In addition to Ag and Pd powders, B 2 O 3 powders, and organic vehicles, MnO 2 , Mn 2 O 3 , Mn 3 O 4 , CuO, and Nb, which have been conventionally used to reduce the TCR (temperature coefficient of resistance) 2 O 3 , Sb 2 O 3 , TiO 2
Can be added within 5% by weight.

上記のガラスとしては、PbO、SiO2の外にガラス成分と
して通常配合されているZnO、B2O3、Al2O3、CaO、BaO、
K2O、Na2O、ZnO、TiO2の少なくとも一種3〜35重量%を
軟化点や熱膨張率等を調節するために添加することが出
来る。
As the above glass, PbO, ZnO which is usually blended as a glass component in addition to SiO 2 , B 2 O 3 , Al 2 O 3 , CaO, BaO,
At least one of K 2 O, Na 2 O, ZnO and TiO 2 can be added in an amount of 3 to 35% by weight in order to adjust the softening point, the coefficient of thermal expansion and the like.

〔作用〕[Action]

本発明におけるガラス組成において、PbOの含有量を70
重量%までとするのは、PbOが70重量%を超えるように
なると、基体に塗布したペーストを焼成して被膜とする
とき最高焼成温度での軟化が著しくパターン形状がくず
れるようになるからである。PbOが35重量%よりも少な
いか、SiO2が40重量%を超えるようになると逆に焼成の
際の軟化が不充分となるため、焼成した被膜が多孔質と
なり弱くなる。SiO2が15重量%未満ではガラス化しにく
くなる。
In the glass composition of the present invention, the content of PbO is 70
The reason why the amount is up to 70% by weight is that if the PbO content exceeds 70% by weight, when the paste applied to the substrate is fired to form a film, the softening at the highest firing temperature becomes remarkable and the pattern shape collapses. . If the PbO content is less than 35% by weight or the SiO 2 content exceeds 40% by weight, on the contrary, the softening during firing becomes insufficient and the fired coating becomes porous and weak. If SiO 2 is less than 15% by weight, it becomes difficult to vitrify.

以上からPbO35〜70重量%、SiO215〜40重量%とした。Based on the above, PbO 35 to 70 wt% and SiO 2 15 to 40 wt% were set.

ガラス粉末は50重量%を超えると、抵抗値が高くなりす
ぎ、10重量%未満では被膜の基体に対する接着強度が低
下するので、10〜50重量%とする。
If the content of the glass powder exceeds 50% by weight, the resistance value becomes too high, and if it is less than 10% by weight, the adhesive strength of the coating film to the substrate decreases, so the content is made 10 to 50% by weight.

RuO2、Pb2O67、Bi2Ru2O67粉末が40重量%を超える
ようになると、焼成後の被膜が極端に多孔質となり被膜
強度が弱くなり信頼性が低下し、5重量%より少ないと
抵抗値が高くなりすぎ150℃恒温放置寿命などの環境安
定性が悪化し、抵抗値の変動が大きくなるのでこれらRu
O2等の添加範囲を5〜40重量%の範囲とする。導電性成
分としてRuO2にAgやPdを併用する場合には、上記の理由
からRuO2は少なくとも5重量%は必要であり、RuO2とAg
やPdとの合計が20重量%未満では抵抗値が高くなりす
ぎ、60重量%を超えるようになると抵抗値が低くなり過
ぎ抵抗体ではなくなる。
When the RuO 2 , Pb 2 O 6 to 7 , Bi 2 Ru 2 O 6 to 7 powder exceeds 40% by weight, the coating after firing becomes extremely porous and the coating strength becomes weak and the reliability decreases, If it is less than 5% by weight, the resistance value becomes too high and the environmental stability such as 150 ° C constant temperature service life deteriorates, and the fluctuation of the resistance value becomes large.
The addition range of O 2 and the like is set to a range of 5 to 40% by weight. When used in combination with Ag or Pd in RuO 2 as the conductive component, RuO 2 for the reasons mentioned above is required to be at least 5% by weight, RuO 2 and Ag
If the total of Pd and Pd is less than 20% by weight, the resistance value becomes too high, and if it exceeds 60% by weight, the resistance value becomes too low to be a resistor.

有機ビヒクルは、この組成物をインキ状にして印刷する
には欠かせないものであるが、20重量%未満ではインキ
状にすることが困難となり、40重量%を超えると現在一
般に使用されている印刷条件では被膜が薄くなりすぎ、
抵抗値が大きく変動するようになるので、有機ビヒクル
の配合比率を20〜40重量%とする。
The organic vehicle is indispensable for printing this composition in the form of ink, but if it is less than 20% by weight, it becomes difficult to make it into an ink, and if it exceeds 40% by weight, it is generally used now. The film becomes too thin under printing conditions,
Since the resistance value will fluctuate greatly, the compounding ratio of the organic vehicle should be 20-40% by weight.

B2O3は本発明の目的である再加熱に対して抵抗値を安定
化するために添加され、ガラス中に分散してガラス中に
分相を生ぜしめ、ガラス相を安定化することにより、再
加熱による抵抗値の変化を小さくするのではないかと考
えられるが、添加量が0.2 重量%未満では効果がなく、
5重量%を超えて添加してもこれ以上の効果の向上は認
められないので、0.2 〜5.0 重量%の範囲とした。
B 2 O 3 is added to stabilize the resistance against reheating which is the object of the present invention, and is dispersed in the glass to cause a phase separation in the glass, thereby stabilizing the glass phase. , It may be possible to reduce the change in resistance value due to reheating, but if the addition amount is less than 0.2% by weight, there is no effect.
Even if added in excess of 5% by weight, no further improvement in effect was observed, so the range was set to 0.2 to 5.0% by weight.

〔実施例〕〔Example〕

RuO2、Pb2Ru2O67、Bi2Ru2O67、MnO2、Pd粉末として
平均粒径0.1 μm以下のものを、Ag粉末として平均粒径
1.2 μmのものを、ガラス粉末として第1表に示す組成
の平均粒径で1.5 〜3μmのものを、B2O3は200メツシ
ユの篩を全部通過したものを使用した。
RuO 2 , Pb 2 Ru 2 O 6 to 7 , Bi 2 Ru 2 O 6 to 7 , MnO 2 and Pd powder having an average particle size of 0.1 μm or less, and Ag powder having an average particle size of 0.1 μm or less.
As the glass powder, 1.2 μm having a composition shown in Table 1 and having an average particle size of 1.5 to 3 μm, and B 2 O 3 which passed through a 200 mesh sieve were used.

これらの無機粉末にエチルセルロース10重量%を含有す
るターピネオール溶液を添加して3本ロールミルで混練
して第2表に示す組成の低抵抗体用ペーストを調製し
た。
A terpineol solution containing 10% by weight of ethyl cellulose was added to these inorganic powders and kneaded with a three-roll mill to prepare low-resistor pastes having the compositions shown in Table 2.

純度96%のアルミナ基板の上に、Pd5重量%Agペースト
からなる導電ペーストをスクリーン印刷法により塗布し
て、ピーク温度150℃のベルト炉で溶剤を乾燥し、次い
でピーク温度850℃×9分間の温度分布を有するベルト
炉を通して焼成して電極を形成する。
Conductive paste consisting of Pd 5 wt% Ag paste was applied by screen printing on a 96% pure alumina substrate, the solvent was dried in a belt furnace with a peak temperature of 150 ° C, and then a peak temperature of 850 ° C for 9 minutes. An electrode is formed by firing through a belt furnace having a temperature distribution.

電極間を橋渡しするように上記のペーストを印刷し電極
と同じ方法で乾燥焼成して抵抗体被膜を形成した。抵抗
体被膜の大きさは1mm角である。
The above paste was printed so as to bridge the electrodes, and dried and fired in the same manner as the electrodes to form a resistor film. The size of the resistor film is 1 mm square.

抵抗体は一組成当り20個作成し、まずデジタルマルチメ
ーターで焼成直後に初期抵抗値を測定した。この平均値
をシート抵抗値(Ω/□)という。この上に黒色のガラス
ペーストを印刷乾燥し、今度はピーク600℃×5分間の
台形の温度分布をもつベルト焼成炉に通してガラスを焼
成した。この焼成後の抵抗値を測定し、初期抵抗値に対
する焼成後は抵抗値の抵抗値変化率(△R%)を求めた。
20 resistors were prepared per composition, and the initial resistance value was measured with a digital multimeter immediately after firing. This average value is called the sheet resistance value (Ω / □). The black glass paste was printed and dried on this, and this time, the glass was baked through a belt baking furnace having a trapezoidal temperature distribution with a peak of 600 ° C. for 5 minutes. The resistance value after firing was measured, and the resistance value change rate (ΔR%) of the resistance value after firing with respect to the initial resistance value was obtained.

第2表にその結果を示す。The results are shown in Table 2.

第2表をみると、ガラスのABCの何れにも成分として
B2O3が含まれているが、ガラスとは別にB2O3を0.2 〜5.
0 重量%添加したものは何れも△R%が改善されているこ
とが判る。
Looking at Table 2, as a component in any of the ABC of glass
B 2 O 3 is included, but separately from B 2 O 3 of 0.2 to 5 and glass.
It can be seen that the ΔR% is improved in each of the samples added with 0% by weight.

〔発明の効果〕〔The invention's effect〕

本発明によれば再度の加熱による抵抗値の変化を従来よ
りも小さくできる抵抗被膜を形成しうる組成物を提供で
きる。
According to the present invention, it is possible to provide a composition capable of forming a resistance coating capable of reducing the change in resistance value caused by reheating again as compared with the conventional case.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】PbO 35〜70重量%、SiO2 15〜40重量%を
含有する組成のガラス粉末10〜50重量%、RuO2、Pb2Ru2
O67、Bi2Ru2O67の何れか少なくとも一種の粉末5〜
40重量%、有機ビヒクル20〜40重量%、B2O3粉末0.2 〜
5.0 重量%の割合にこれらを含有する厚膜抵抗体形成用
組成物。
1. A glass powder having a composition containing 35 to 70% by weight of PbO and 15 to 40% by weight of SiO 2 , 10 to 50% by weight, RuO 2 , and Pb 2 Ru 2.
O 6 ~ 7, Bi 2 Ru 2 O 6 ~ 7 or at least one powder 5 of
40 wt% organic vehicle 20-40 wt%, B 2 O 3 powder 0.2
A thick film resistor-forming composition containing these in an amount of 5.0% by weight.
【請求項2】PbO 35〜70重量%、SiO2 15〜40重量%を
含有する組成のガラス粉末10〜50重量%、RuO2を少なく
とも5重量%を含み、Ag、Pdの一方又は両方とで20〜60
重量%、有機ビヒクル20〜40重量%、B2O3粉末0.2 〜5.
0 重量%の割合にこれらを含有する厚膜抵抗体形成用組
成物。
2. Glass powder having a composition containing 35 to 70% by weight of PbO, 15 to 40% by weight of SiO 2 , 10 to 50% by weight of RuO 2, and at least 5% by weight of RuO 2, and one or both of Ag and Pd. 20 ~ 60
Wt% organic vehicle 20-40 wt%, B 2 O 3 powder 0.2 to 5.
A composition for forming a thick film resistor containing these in an amount of 0% by weight.
JP1144385A 1989-06-07 1989-06-07 Thick film resistor forming composition Expired - Fee Related JPH0654726B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1144385A JPH0654726B2 (en) 1989-06-07 1989-06-07 Thick film resistor forming composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1144385A JPH0654726B2 (en) 1989-06-07 1989-06-07 Thick film resistor forming composition

Publications (2)

Publication Number Publication Date
JPH039501A JPH039501A (en) 1991-01-17
JPH0654726B2 true JPH0654726B2 (en) 1994-07-20

Family

ID=15360907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1144385A Expired - Fee Related JPH0654726B2 (en) 1989-06-07 1989-06-07 Thick film resistor forming composition

Country Status (1)

Country Link
JP (1) JPH0654726B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111133535A (en) * 2017-09-22 2020-05-08 住友金属矿山株式会社 Composition for thick film resistor, thick film resistor paste, and thick film resistor

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5474711A (en) * 1993-05-07 1995-12-12 E. I. Du Pont De Nemours And Company Thick film resistor compositions
CN114883027B (en) * 2022-05-05 2023-09-01 潮州三环(集团)股份有限公司 Thick film resistor paste

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111133535A (en) * 2017-09-22 2020-05-08 住友金属矿山株式会社 Composition for thick film resistor, thick film resistor paste, and thick film resistor
CN111133535B (en) * 2017-09-22 2022-03-29 住友金属矿山株式会社 Composition for thick film resistor, thick film resistor paste, and thick film resistor

Also Published As

Publication number Publication date
JPH039501A (en) 1991-01-17

Similar Documents

Publication Publication Date Title
EP1632961B1 (en) Thick-film resistor paste and thick-film resistor
EP1632958B1 (en) A thick-film resistor paste, a thick-film resistor manufactured using the thick-film resistor paste and an electronic device comprising the thick-film resistor
JP2003257242A (en) Thick membrane resistor paste
JPH0654726B2 (en) Thick film resistor forming composition
JPH05234703A (en) Resistance composition for manufacturing thick-film resistor
JP2005209744A (en) Thick film resistor paste, thick film resistor, electronic component
JP2986539B2 (en) Thick film resistor composition
US5387559A (en) Resistive paste
US5494864A (en) Resistive paste
JPH0770370B2 (en) Thick film resistor forming composition
JP2020061467A5 (en)
US5643841A (en) Resistive paste
US6355188B1 (en) Resistive material, and resistive paste and resistor comprising the material
JP3094683B2 (en) Composition for forming thick film resistor
JPH0590006A (en) Composition for thick-film resistor formation
JP2900610B2 (en) Thick film conductor composition
JP2644017B2 (en) Resistance paste
JPH08186004A (en) Resistor material, resistor paste and resistor using the same
JPH0661005A (en) Composition for forming thick film resistor
JP2023144072A (en) Thick film resistor composition, thick film resistor paste, and thick film resistor
JP2005209738A (en) Thick film resistor and its production process
JP2020061466A5 (en)
JP2023135971A (en) Thick film resistor paste, thick film resistor, and electronic component
JPH077723B2 (en) Resistance paste
JPH0945514A (en) Preparation of thick-film resistance paste

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees