JP2986539B2 - Thick film resistor composition - Google Patents
Thick film resistor compositionInfo
- Publication number
- JP2986539B2 JP2986539B2 JP2333545A JP33354590A JP2986539B2 JP 2986539 B2 JP2986539 B2 JP 2986539B2 JP 2333545 A JP2333545 A JP 2333545A JP 33354590 A JP33354590 A JP 33354590A JP 2986539 B2 JP2986539 B2 JP 2986539B2
- Authority
- JP
- Japan
- Prior art keywords
- thick film
- composition
- weight
- film resistor
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は絶縁基板上に印刷し焼成して該基板上に印刷
抵抗体を形成するための厚膜抵抗組成物に関し、特にシ
ート抵抗値が0.085〜30Ω／□で、TCRが＋／−50ppm以
内の抵抗体を形成することに有用な厚膜抵抗組成物に関
する。Description: TECHNICAL FIELD The present invention relates to a thick film resistor composition for forming a printed resistor on an insulating substrate by printing and firing on the substrate, and particularly to a thick film resistor composition having a sheet resistance value. The present invention relates to a thick film resistor composition useful for forming a resistor having a TCR of 0.085 to 30 Ω / □ within +/− 50 ppm.
［従来の技術］ 従来の厚膜回路においては印刷抵抗体形成し導電粒子
として酸化ルテニウムないしはパイロクロア型のルテニ
ウム酸鉛又は、ルテニウム酸ビスマスを用いたルテニウ
ム系抵抗ペーストが一般に広く使用されている。ルテニ
ウム系の抵抗ペーストは、上記の導電成分とガラスフリ
ットを有機ビヒクルに分散させてなり、導電成分とガラ
の配合比を変えることにより所望の抵抗値を得ることが
できる。又、抵抗の温度係数（以後TCRと呼ぶ）を調整
する目的で、Cu2O,MnO2,Al2O3,TiO2,ZrO2等の無機添加
物を加えることが一般に行われている。[Prior Art] In a conventional thick film circuit, a ruthenium-based resistance paste using a ruthenium oxide or pyrochlore type ruthenate or bismuth ruthenate as a conductive particle is generally widely used as a printed resistor. The ruthenium-based resistance paste is obtained by dispersing the above-described conductive component and glass frit in an organic vehicle, and a desired resistance value can be obtained by changing the mixing ratio of the conductive component and glass. In addition, for the purpose of adjusting the temperature coefficient of resistance (hereinafter referred to as TCR), it is common practice to add inorganic additives such as Cu 2 O, MnO 2 , Al 2 O 3 , TiO 2 , and ZrO 2 .
［発明が解決しようとする課題］ しかしながら、ルテニウム系ペーストを用いて抵抗形
成する場合、低い抵抗値の限界が３〜５Ω／□/10μｍ
までであり、しかもTCRが＋／−50ppm以内のものは知ら
れていない。それ故、抵抗値として低いものが要求され
る電気回路の配線においては膜厚を厚くしたり、スクエ
ア数を少なくしている。そのため抵抗体を広い面積で印
刷しなければならず厚膜配線板の小型化・高密度が困難
である。一方、ルテニウム系抵抗ペーストの代わりに在
来のAgPd系導体ペーストを用いることも考えられるが、
TCRが大きすぎて、抵抗体として望まれる精度が得られ
にくいため実用には適さないという問題があった。[Problems to be Solved by the Invention] However, when a resistor is formed using a ruthenium-based paste, the limit of a low resistance value is 3 to 5Ω / □ / 10 μm
And TCR within +/- 50 ppm is not known. Therefore, in the wiring of an electric circuit that requires a low resistance value, the film thickness is increased or the number of squares is reduced. Therefore, the resistor must be printed over a wide area, and it is difficult to reduce the size and the density of the thick film wiring board. On the other hand, it is conceivable to use a conventional AgPd-based conductor paste instead of the ruthenium-based resistance paste,
There has been a problem that the TCR is too large, and it is difficult to obtain the precision desired as a resistor, so that it is not suitable for practical use.
本発明は上記の問題点を解決し、シート抵抗値が0.08
5〜30Ω／□/10μｍの範囲であり、かつTCRが±50ppmを
有する印刷抵抗体を形成する為の厚膜抵抗組成物を提供
することを目的とする。The present invention solves the above-mentioned problems, and has a sheet resistance value of 0.08.
An object of the present invention is to provide a thick film resistor composition for forming a printed resistor having a range of 5 to 30 Ω / □ / 10 μm and a TCR of ± 50 ppm.
［課題を解決するための手段］ 本発明は貴金属粉末と無機結合剤とが有機ビヒクルに
分散されてなる厚膜抵抗組成物において、（Ａ）貴金属
粉末が、銀44〜47重量％とパラジウム53〜56重量％の組
成を有することを第１の特徴とし、（Ｂ）無機結合剤
が、軟化点750〜900℃のガラスフリットを含むことを第
２の特徴とする厚膜抵抗組成物である。[Means for Solving the Problems] The present invention relates to a thick film resistance composition comprising a noble metal powder and an inorganic binder dispersed in an organic vehicle, wherein (A) the noble metal powder contains 44 to 47% by weight of silver and palladium 53; A thick film resistance composition characterized by having a composition of about 56% by weight as a first feature and (B) a second feature that the inorganic binder contains a glass frit having a softening point of 750 to 900 ° C. .
本発明における抵抗組成物は銀及びパラジウムからな
る貴金属粉末を含有している。これらの金属成分比は重
量比で銀／パラジウムが47/53〜44/56である。又、銀と
パラジウムは、銀粉末とパラジウム粉末の混合物を用い
てもよく、銀とパラジウムの合金粉末でもよい。使用さ
れる銀粉末は平均粒径が0.5〜７μｍで表面積が0.5〜3m
2/gのものが、パラジウム粉末は平均粒径が0.1〜1.5μ
ｍでその表面積が0.5〜20m2/gのものがそれぞれ好まし
い。又、合金粉末の場合は、平均粒径が0.1〜μｍで表
面積が１〜10m2/gのものがふさわしい。The resistance composition according to the present invention contains a noble metal powder composed of silver and palladium. The metal component ratio of silver / palladium is 47/53 to 44/56 by weight. Silver and palladium may be a mixture of silver powder and palladium powder, or may be an alloy powder of silver and palladium. The silver powder used has an average particle size of 0.5 to 7 μm and a surface area of 0.5 to 3 m
2 / g, palladium powder has an average particle size of 0.1-1.5μ
m and a surface area of 0.5 to 20 m 2 / g are preferred. In the case of an alloy powder, one having an average particle size of 0.1 to μm and a surface area of 1 to 10 m 2 / g is suitable.
該貴金属粉末とともに本発明に係わる抵抗組成物を構
成する無機結合剤粉末は少なくともガラスフリットを含
んでおり、必要に応じてチタニアないしはアルミナを含
んでもよい。The inorganic binder powder constituting the resistance composition according to the present invention together with the noble metal powder contains at least glass frit, and may contain titania or alumina as needed.
前記無機結合剤の配合量は、所望の抵抗値を得るよう
に増減すればよい。The amount of the inorganic binder may be increased or decreased so as to obtain a desired resistance value.
このため本発明では、貴金属粉末100重量部に対し10
〜120重量部の範囲のガラスフリットを配合することを
第３の特徴としている。Therefore, in the present invention, 10 parts by weight of noble metal powder
A third feature is that a glass frit in a range of up to 120 parts by weight is blended.
さらに本発明の第４の特徴は、ガラスフリットとして
750〜900℃に軟化点がある非晶質ガラスであって、重量
％でSiO240〜60,Al2O310〜20,B2O33〜12,MgO0.5〜5,CaO
15〜30の組成をするものを使用する点にある。更に好ま
しくは重量％でSiO250〜60,Al2O312〜16,B2O35〜10,MgO
2〜5,CaO18〜30のもので750〜850℃の軟化点を有するも
のである。A fourth feature of the present invention is that the glass frit
Amorphous glass with softening point at 750-900 ° C, SiO 2 40-60, Al 2 O 3 10-20, B 2 O 3 3-12, MgO 0.5-5, CaO
The point is to use one having a composition of 15 to 30. More preferably, by weight%, SiO 2 50-60, Al 2 O 3 12-16, B 2 O 3 5-10, MgO
It has a softening point of 750 to 850 ° C with 2 to 5, CaO 18 to 30.
金属酸化物として、チタニアないしはアルミナのどち
らかを添加してもよいが粒径が0.1μｍ以下の微細粉が
効果的である。しかしながら多少粒径が大きいものを用
いても、さらにアルコキシド，キレート等の有機化合物
を用いても所望の特性は十分確保される。Either titania or alumina may be added as the metal oxide, but fine powder having a particle size of 0.1 μm or less is effective. However, the desired characteristics are sufficiently ensured even if a material having a slightly larger particle size is used and an organic compound such as an alkoxide or a chelate is further used.
また、金属酸化物の含有量は、１〜25重量部が効果的
である。In addition, the content of the metal oxide is effectively 1 to 25 parts by weight.
貴金属粉及び無機結合剤を分散させる有機ビヒクル
は、エチルセルロース、アクリル樹脂等の樹脂をターピ
ネオール、ブチルカルビトール、パインオイル等の有機
溶剤に溶解したものが好ましく用いられ、配合量は、20
〜120重量部程度が望ましい。The organic vehicle in which the precious metal powder and the inorganic binder are dispersed is preferably a solution in which a resin such as ethyl cellulose or an acrylic resin is dissolved in an organic solvent such as terpineol, butyl carbitol, or pine oil.
About 120 parts by weight is desirable.
［作用］ このような構成から成る本発明の抵抗組成物をアルミ
ナセラミックス基板上へ印刷し、乾燥の後ピーク温度80
0〜900℃で約５〜30分焼成して抵抗組成物が被覆された
回路基板が作製される。[Operation] The resistance composition of the present invention having such a configuration is printed on an alumina ceramics substrate, and after drying, has a peak temperature of 80.
Baking at 0 to 900 ° C. for about 5 to 30 minutes produces a circuit board coated with the resistance composition.
このように作製された本発明の抵抗組成物が被覆され
た回路基板ではシート抵抗値レンジ0.085〜30Ω／□/10
μｍでかつTCRが±50ppm以内におさまっている。In the circuit board thus coated with the resistance composition of the present invention, the sheet resistance value range is 0.085 to 30Ω / □ / 10.
μm and the TCR is within ± 50 ppm.
バルクのAgPd合金のTCR特性においてAgPd比が40/60前
後で極めてTCRが低くなる領域がある。本発明ではこの
性質を利用してAg及びPdからなる貴金属粉末を導電粒子
とし、抵抗値調整に特定な高軟化点ガラス及び金属酸化
物を組み合せ無機結合剤とすることにより抵抗値範囲0.
085〜30ΩでTCRが±50ppmを有する抵抗ペーストを提供
せんとするものである。ここにおいて特定なガラスフリ
ットを用いた理由としては850℃前後で焼成される際、
抵抗値の変動をできるだけ小さく抑えるためであり、0.
085〜30Ωの範囲でTCRを安定して小さく抑えるためであ
る。この無機酸化物を必要に応じて用いる理由として焼
成時の抵抗膜の発泡等による異常値の発生を防止するた
めである。In the TCR characteristics of the bulk AgPd alloy, there is a region where the TCR is extremely low when the AgPd ratio is around 40/60. In the present invention, a noble metal powder composed of Ag and Pd is used as conductive particles utilizing this property, and a high softening point glass and a metal oxide specific for resistance value adjustment are used as an inorganic binder to form a resistance value range of 0.
It is intended to provide a resistive paste having a TCR of 085 to 30Ω and ± 50 ppm. The reason for using a specific glass frit here is that when firing at around 850 ° C,
This is to keep the fluctuation of the resistance value as small as possible.
This is in order to stably suppress the TCR within the range of 085 to 30Ω. The reason for using this inorganic oxide as needed is to prevent the occurrence of abnormal values due to foaming of the resistive film at the time of firing.
［実施例］ 以下実施例に基づいて本発明をより詳細に説明する
が、該実施例は本発明を限定するものではない。[Examples] Hereinafter, the present invention will be described in more detail based on examples, but the examples do not limit the present invention.
エチルセルロースをターピネオールに溶解したビヒク
ル中に微細に分割された貴金属粉末と無機結合剤粉末を
第２表に示すような配合比で混合し、混練分散した厚膜
抵抗組成物を96％アルミナセラミックス基板上に印刷
し、コンベア炉中ピーク温度850℃における10分間の焼
成を１回行い、膜厚７〜14μの電気回路を形成した。ガ
ラスフリットとして第１表B,C,Dの組成を有するSiO2−A
l2O3−B2O3−MgO−Cao系ガラスを用いた組成物（実施
例）と低軟化点を有するガラスフリットＡを用いた組成
物及びAg/Pd比を44/56〜47/53以外の範囲で作成した組
成物（比較例）を使用した。A noble metal powder and an inorganic binder powder finely divided in a vehicle in which ethyl cellulose is dissolved in terpineol are mixed at a compounding ratio as shown in Table 2, and the kneaded and dispersed thick film resistance composition is placed on a 96% alumina ceramic substrate. And fired once in a conveyor furnace at a peak temperature of 850 ° C. for 10 minutes to form an electric circuit having a thickness of 7 to 14 μm. SiO 2 -A having the composition of Tables B, C and D as glass frit
Compositions using l 2 O 3 —B 2 O 3 —MgO—Cao based glass (Examples), compositions using glass frit A having a low softening point, and Ag / Pd ratio of 44/56 to 47 / Compositions prepared in ranges other than 53 (comparative examples) were used.
第３表から明らかな通り、本実施例によるAg/Pd比
（重量％）44/56〜47/53の範囲において750〜900℃の高
軟化点を有するSiO2−Al2O3−B2O3−MgO−CaO系ガラス
フリットを用いた抵抗体組成物はTCRが±50ppm以内であ
る。 As is apparent from Table 3, SiO 2 —Al 2 O 3 —B 2 having a high softening point of 750 to 900 ° C. in an Ag / Pd ratio (% by weight) of 44/56 to 47/53 according to the present example. O 3 -MgO-CaO-based resistor composition using a glass frit is within the TCR ± 50 ppm.
一方、Ag/Pd比が44/56〜47/53の範囲以外の組成の抵
抗体組成物はTCRが±50ppmの範囲を越えている。さらに
Ag/Pd比は45/55とし、ガラスフリットとして従来まで厚
膜ペーストに広く使用されてきた低軟化点ガラスを用い
た抵抗体組成物では、同じくTCRが±50ppmを越えてしま
う。On the other hand, the resistor composition having a composition other than the Ag / Pd ratio of 44/56 to 47/53 has a TCR exceeding the range of ± 50 ppm. further
The Ag / Pd ratio is 45/55, and a resistor composition using a low softening point glass, which has been widely used as a glass frit in the past for thick film pastes, also has a TCR exceeding ± 50 ppm.
［発明の効果］ 本発明ではAg/Pd粉を導電粒子として用い、高軟化点
を有するガラスフリットとを含んで成る抵抗体組成物が
焼成により抵抗値が0.085〜30Ω／□/10μｍ、及びTCR
が±50ppm以内の特性を有する。[Effects of the Invention] In the present invention, a resistor composition containing Ag / Pd powder as conductive particles and a glass frit having a high softening point is fired to have a resistance value of 0.085 to 30 Ω / □ / 10 μm, and a TCR.
Has characteristics within ± 50 ppm.
これにより、厚膜配線において抵抗体として低い抵抗
値が要求される場合においても従来までのルテニウム系
で行っていたような膜厚を厚くし、スクエア数を少なく
することなく小型かつ高密度な配線が可能とする。As a result, even in the case where a low resistance value is required as a resistor in a thick film wiring, a thin and high-density wiring without increasing the number of squares can be achieved without increasing the number of squares as in the conventional ruthenium system. Is possible.
Claims (2)
に分散されてなる厚膜抵抗組成物において、 （Ａ）貴金属粉末が、銀44〜47重量％とパラジウム53〜
56重量％の組成を有し、 （Ｂ）無機結合剤が、軟化点750〜900℃のガラスフリッ
トを含み （Ｃ）無機結合剤が、貴金属粉末100重量部に対し、10
〜120重量部のガラスフリットであり、 （Ｄ）ガラスフリットが、重量表示でSiO240〜60％、Al
2O310〜20％、B2O33〜12％、MgO0.5〜５％、及びCaO15
〜30％の組成を有することを特徴とする （Ｅ）シート抵抗値0.085〜30Ω／□で、TCRが＋／−50
ppm以内の抵抗体を形成することに有用な厚膜抵抗組成
物。1. A thick film resistor composition comprising a noble metal powder and an inorganic binder dispersed in an organic vehicle, wherein (A) the noble metal powder contains 44 to 47% by weight of silver and 53 to 53% of palladium.
(B) the inorganic binder contains a glass frit having a softening point of 750 to 900 ° C., and (C) the inorganic binder has a composition of 10% by weight based on 100 parts by weight of the noble metal powder.
(D) glass frit is 40 to 60% of SiO 2 by weight, Al
2 O 3 10-20%, B 2 O 3 3-12%, MgO 0.5-5%, and CaO 15
(E) having a sheet resistance of 0.085 to 30 Ω / □ and a TCR of +/− 50.
A thick film resistor composition useful for forming resistors within ppm.
チタニア又はアルミナを１〜25重量部含有していること
を特徴とする請求項１に記載の厚膜抵抗組成物。2. The method according to claim 1, wherein the inorganic binder comprises, in addition to the glass frit,
The thick film resistor composition according to claim 1, wherein the composition contains 1 to 25 parts by weight of titania or alumina.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2333545A JP2986539B2 (en) | 1990-11-30 | 1990-11-30 | Thick film resistor composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2333545A JP2986539B2 (en) | 1990-11-30 | 1990-11-30 | Thick film resistor composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04206602A JPH04206602A (en) | 1992-07-28 |
| JP2986539B2 true JP2986539B2 (en) | 1999-12-06 |
Family
ID=18267248
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2333545A Expired - Fee Related JP2986539B2 (en) | 1990-11-30 | 1990-11-30 | Thick film resistor composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2986539B2 (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5922627A (en) * | 1997-10-17 | 1999-07-13 | National Starch And Chemical Investment Holding Corporation | Low resistivity palladium-silver compositions |
| CA2267492C (en) * | 1998-04-29 | 2003-09-23 | Morton International, Inc. | Formation of thin film resistors |
| DE10308957A1 (en) | 2003-02-28 | 2004-09-09 | Siemens Ag | Level sensor for a fuel tank of a motor vehicle |
| US7196295B2 (en) | 2003-11-21 | 2007-03-27 | Watlow Electric Manufacturing Company | Two-wire layered heater system |
| JP5261947B2 (en) * | 2007-03-02 | 2013-08-14 | パナソニック株式会社 | Low resistance chip resistor and manufacturing method thereof |
-
1990
- 1990-11-30 JP JP2333545A patent/JP2986539B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04206602A (en) | 1992-07-28 |
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