JPH039501A - Composition for forming thick film resistor - Google Patents
Composition for forming thick film resistorInfo
- Publication number
- JPH039501A JPH039501A JP1144385A JP14438589A JPH039501A JP H039501 A JPH039501 A JP H039501A JP 1144385 A JP1144385 A JP 1144385A JP 14438589 A JP14438589 A JP 14438589A JP H039501 A JPH039501 A JP H039501A
- Authority
- JP
- Japan
- Prior art keywords
- weight
- resistance value
- powder
- composition
- thick film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 18
- 239000000843 powder Substances 0.000 claims abstract description 27
- 239000011521 glass Substances 0.000 claims abstract description 22
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 9
- 238000000576 coating method Methods 0.000 abstract description 9
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 abstract description 8
- 230000007423 decrease Effects 0.000 abstract description 4
- 238000007639 printing Methods 0.000 abstract description 3
- 230000007613 environmental effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 238000013329 compounding Methods 0.000 abstract 1
- 238000010304 firing Methods 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000003303 reheating Methods 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910018663 Mn O Inorganic materials 0.000 description 1
- 229910019899 RuO Inorganic materials 0.000 description 1
- 235000016639 Syzygium aromaticum Nutrition 0.000 description 1
- 244000223014 Syzygium aromaticum Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 235000013312 flour Nutrition 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はセラミック基体上に厚膜抵抗体を形成するため
の厚膜抵抗体形成用組成物に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a composition for forming a thick film resistor on a ceramic substrate.
軟化点４００〜７００σのガラスフリットに所要の抵抗
値になるように導電性粉末を混合し、これを有機ビヒク
ルに分散したペーストを、アルミナ等のセラミック基体
上に、スクリーン印刷法や転写法により所要形状に塗布
し、６００〜９００σで焼成して、基体上に電子回路部
品としての厚膜抵抗体を形成することが行なわれている
。A glass frit with a softening point of 400 to 700σ is mixed with conductive powder to give the required resistance value, and a paste made by dispersing this in an organic vehicle is applied onto a ceramic substrate such as alumina using a screen printing method or a transfer method. A thick film resistor is formed on a substrate as an electronic circuit component by coating it in a shape and firing at 600 to 900σ.
この導電性粉末としてＡｇ、 Ｐｄの他にＲｕＯやパイ
ロクロアであるＰｂ Ｒｕ Ｏ、Ｂｉ Ｒｕ Ｏを使２
２ ６〜７ ２ ２ １ｙ−，７
用することにより抵抗値の安定性を改善したりすること
も公知である。In addition to Ag and Pd, RuO and pyrochlore Pb Ru O and Bi Ru O are used as the conductive powder.
2 6～7 2 2 1y-,7
It is also known that the stability of resistance value can be improved by using
この厚膜抵抗体を使ったチップ抵抗器などの製造工程で
は、通常厚膜抵抗体の抵抗値を調整した後に、ガラスコ
ートなどの目的の為に６００σ程度の再加熱工程が入る
。この再加熱工程での抵抗値の変化を考慮して、その前
にトリミングという抵抗値の調整を行なっている。この
工程での抵抗値の変化が大きいと最終の抵抗値を予定の
範囲内に収めることが困難となり、歩留りを悪化させる
大きな原因となっている。In the manufacturing process of chip resistors and the like using this thick film resistor, after adjusting the resistance value of the thick film resistor, a reheating process of about 600σ is usually performed for purposes such as glass coating. In consideration of the change in resistance value during this reheating process, the resistance value is adjusted by trimming before that. If the change in resistance value during this process is large, it becomes difficult to keep the final resistance value within a predetermined range, which is a major cause of deterioration in yield.
本発明はこの再加熱工程での抵抗値の変化率の小さい、
従って歩留り良く厚膜抵抗体の得られる主として低抵抗
値を有する厚膜抵抗体形成用組成物を提供することを課
題とする。The present invention has a small rate of change in resistance value during this reheating process.
Therefore, it is an object of the present invention to provide a composition for forming a thick film resistor mainly having a low resistance value, which allows thick film resistors to be obtained with good yield.
本発明は、Ｐｂ０３５〜７０重量％、ＳｉＯ１５〜４０
重量％を含有する組成のガラス粉末１０〜５０重量％、
ＲｕＯ、Ｐｂ Ｒｕ Ｏ、Ｂｉ Ｒｕ Ｏの何れか少２
２ ２ ６＋＋７ ２ ２
６〜７なくとも一種の粉末５〜４０重量％、ＲｕＯ２を
少なくとも５重量％、ＥＯ粉末０．２〜５．０重量％の
割３
合にこれらを含有する厚膜抵抗体形成用組成物、及びＰ
ｂＯ３５〜７０重量％、Ｓ゛１０ １５〜４０重量％を
含有する組成のガラス粉末１０〜５０重量％、ＲｕＯを
少なくとも５重量％を含みＡｇ５Ｐｄのガラス粉末１０
〜６０重量％、ＲｕＯ２を少なくとも５重量％、ＢＯ粉
末０．２〜５．０重量％の割合に３３
これらを含有する厚膜抵抗体形成用組成物を課題を解決
するための手段とするものである。In the present invention, Pb035-70% by weight, SiO15-40%
10-50% by weight of glass powder with a composition containing % by weight;
A small amount of any of RuO, Pb Ru O, Bi Ru O
2 2 6++7 2 2
6-7 A composition for forming a thick film resistor, which contains at least 5 to 40% by weight of at least one kind of powder, at least 5% by weight of RuO2, and 0.2 to 5.0% by weight of EO powder; and P
10-50% by weight of glass powder with a composition containing 35-70% by weight of bO, 15-40% by weight of S゛10, glass powder of Ag5Pd 10 containing at least 5% by weight of RuO
~60% by weight, at least 5% by weight of RuO2, and 0.2 to 5.0% by weight of BO powder.33 A composition for forming a thick film resistor containing these is a means for solving the problem. It is.
固形物粉末は、ビヒクルと混合してペースト状とし、１
５０〜４００メツシユスクリーンを通して基体に塗布す
るため、ペーストが円滑にスクリーンを通過しつるよう
にするため平均粒径１０μｍ以下、好ましくは５μｍ以
下の粉末として用いる。The solid powder is mixed with a vehicle to form a paste, and 1
Since the paste is applied to the substrate through a 50 to 400 mesh screen, it is used as a powder with an average particle size of 10 μm or less, preferably 5 μm or less, so that the paste passes through the screen smoothly and sticks.
有機ビヒクルは、従来と同様にターピネオール、ブチル
カルピトールアセテート、トルエンなどの溶媒にエチル
セルロース、メタクリレート樹脂等を溶解したものが用
いられる。As the organic vehicle, a solution of ethyl cellulose, methacrylate resin, etc. in a solvent such as terpineol, butylcarpitol acetate, toluene, etc. is used as in the conventional method.
上記のガラス粉末、ＲｕＯ、Ｐｂ Ｒｕ Ｏ、Ｂｉ Ｒ
ｕ２ ２ ２ ６＋＋７
０６２１、Ａｇ５Ｐｄの粉末、ＢＯ粉末、有機ビヒクル
以外に、従来からＴＯＲ（抵抗温度係数）を小さくする
ために用いられているＭｎＯｓ Ｍｎ Ｏ、Ｍｎ ０１
ＧｕＯ１Ｎｂ Ｏ、Ｓｂ Ｏ、ＴｉＯを５重ｆｆｉ％以
内で添加することもできる。The above glass powder, RuO, Pb Ru O, Bi R
In addition to u2 2 2 6++7 0621, Ag5Pd powder, BO powder, and organic vehicle, MnOs Mn O, Mn 01, which have been conventionally used to reduce TOR (temperature coefficient of resistance)
GuO1NbO, SbO, and TiO can also be added in an amount of up to 5% by weight.
上記のガラスとしては、ＰｂＯ，ＳｉＯの外にガラス成
分として通常配合されているＺｎ０ＳＢ Ｏ、Ａｌ０１
ＣａＯ１ＥａＯ１ＫＯ１Ｎａ ０ＳＺｎＯ１ＴｉＯの少
なくとも一種３〜３５重量％を軟化点や熱膨張率等を調
節するために添加することが出来る。The above glasses include Zn0SB O and Al01, which are usually blended as glass components in addition to PbO and SiO.
3 to 35% by weight of at least one of CaO1EaO1KO1Na0SZnO1TiO can be added in order to adjust the softening point, coefficient of thermal expansion, etc.
本発明におけるガラス組成において、ＰｂＯの含有量を
７０重量％までとするのは、ＰｂＯが７０重量％を超え
るようになると、基体に塗布したペーストを焼成して被
膜とするとき最高焼成温度での軟化が著しくパターン形
状がくずれるようになるからである。ＰＩ）Ｏが３５重
量％よりも少ないか、ＳｉＯが４０重量％を超えるよう
になると逆に焼成の際の軟化が不充分となるため、焼成
した被膜が多孔質となり弱くなる。ＳｉＯが１５重量％
未満ではガラス化しにくくなる。In the glass composition of the present invention, the content of PbO is set to 70% by weight.If PbO exceeds 70% by weight, the paste applied to the substrate will be fired at the maximum firing temperature to form a film. This is because the softening becomes significant and the pattern shape becomes distorted. If the PI)O content is less than 35% by weight or if the SiO content exceeds 40% by weight, the softening during firing will be insufficient and the fired coating will become porous and weak. 15% by weight of SiO
If it is less than that, it becomes difficult to vitrify.
以上からＰｂＯ３５〜７０重量％、Ｓｉ０ １５〜４０
重量％とした。From the above, PbO 35-70% by weight, Si0 15-40%
It was expressed as weight%.
ガラス粉末は５０重量％を超えると、抵抗値が高くなり
すぎ、１０重１１％未満では被膜の基体に対する接着強
度が低下するので、１０〜５０重ｆｔ％とする。When the glass powder exceeds 50% by weight, the resistance value becomes too high, and when it is less than 10% by weight and 11% by weight, the adhesive strength of the coating film to the substrate decreases, so it is set at 10 to 50% by weight.
ＲｕＯＳＰｂ Ｒｕ Ｏ、Ｂｉ Ｒｕ Ｏ粉末が４０重
量雪２！・〜丁意−〜丁
■を超えるようになると、焼成後の被膜が極端に多孔質
となり被膜強度が弱くなり信頼性が低下し、５重量％よ
り少ないと抵抗値が高くなりすぎ１５０Ｃ′恒濡放置寿
命などの環境安定性が悪化し、抵抗値の変動が大きくな
るのでこれらＲｕＯ等の添加範囲を５〜４０重量％の範
囲とする。導電性成分としてＲｕＯにＡｇやＰｄを併用
する場合には、上意
記の理由からＲｕＯは少なくとも５重量％は必要であり
、ＲｕＯとＡｇやｐａとの合計が２０重量％未満では抵
抗値が高くなりすぎ、６０重量％を超えるようになると
抵抗値が低くなり過ぎ抵抗体ではなくなる。RuOSPb Ru O, Bi Ru O powder is 40 weight snow 2!・If it exceeds 〜Choice−〜Cho■, the coating after firing becomes extremely porous, the coating strength becomes weak, and reliability decreases.If it is less than 5% by weight, the resistance value becomes too high and 150C' constant. Since the environmental stability such as the life when left wet is deteriorated and the resistance value fluctuates greatly, the addition range of RuO, etc. is set to be in the range of 5 to 40% by weight. When RuO is used in combination with Ag or Pd as a conductive component, at least 5% by weight of RuO is required for the above reasons, and if the total of RuO and Ag or pa is less than 20% by weight, the resistance value will decrease. If it becomes too high, exceeding 60% by weight, the resistance value will become too low and it will no longer be a resistor.
有機ビヒクルは、この組成物をインキ状にして印刷する
には欠かせないものであるが、２０重量％未満ではイン
キ状にすることが困難となり、４０重量％を超えると現
在一般に使用されている印刷条件では被膜が薄くなりす
ぎ、抵抗値が大きく変動するようになるので、有機ビヒ
クルの配合比率を２０〜４０重量％とする。The organic vehicle is essential for printing this composition in the form of ink, but if it is less than 20% by weight, it becomes difficult to form it into ink, and if it exceeds 40% by weight, it is generally used. Under printing conditions, the film becomes too thin and the resistance value fluctuates greatly, so the blending ratio of the organic vehicle is set to 20 to 40% by weight.
ＢＯは本発明の目的である再加熱に対して抵抗値を安定
化するために添加され、ガラス中に分散してガラス中に
分相を生ぜしめ、ガラス相を安定化することにより、再
加熱による抵抗値の変化を小さくするのではないかと考
えられるが、添加量が０．２重量％未満では効果がなく
、５重量％を超えて添加してもこれ以上の効果の向上は
認められないので、０．２〜５．０重量％の範囲とした
。BO is added to stabilize the resistance value against reheating, which is the purpose of the present invention, and is dispersed in the glass to cause phase separation in the glass, thereby stabilizing the glass phase. It is thought that it may reduce the change in resistance value due to the addition amount, but it is not effective if the amount added is less than 0.2% by weight, and no further improvement in the effect is observed even if added in excess of 5% by weight. Therefore, the content was set in the range of 0.2 to 5.0% by weight.
ＲｕＯ、Ｐｂ Ｒｕ Ｏ、Ｂｉ Ｒｕ Ｏ、ＭｎＯ、Ｐ
（ｌ粉２ ２ ２ ６〜丁
鵞 ｔ ・〜丁未として平均粒径０．１μ
ｍ以下のものを、Ａｇ粉末として平均粒径１．２μｍの
ものを、ガラス粉末として第１表に示す組成の平均粒径
で１．５〜３μｍのものを、ＢＯは２００メツシユの篩
を全部通過したものを使用した。RuO, Pb RuO, BiRuO, MnO, P
(1 flour 2 2 2 6 ~ cloves
Average particle size: 0.1μ
Ag powder with an average particle size of 1.2 μm, glass powder with an average particle size of 1.5 to 3 μm with the composition shown in Table 1, and BO with a 200 mesh sieve. I used what passed.
第 １ 表（重量％）
これらの無機粉末にエチルセルロース１０重量％を含有
するターピネオール溶液を添加して３本ロールミルで混
練して第２表に示す組成の低抵抗体用ペーストを調製し
た。Table 1 (% by weight) A terpineol solution containing 10% by weight of ethyl cellulose was added to these inorganic powders and kneaded in a three-roll mill to prepare a paste for a low resistance element having the composition shown in Table 2.
純度９６％のアルミナ基板の上に、ｐａｓｉ量％Ａｇヘ
ーストからなる導電ペーストをスクリーン印刷法により
塗布して、ピーク温度１５０σのベルト炉で溶剤を乾燥
し、次いでピーク温度８５０σ×９分間の温度分布を有
するベルト炉を通して焼成して電極を形成する。On an alumina substrate with a purity of 96%, a conductive paste consisting of %Ag haste was applied by screen printing, and the solvent was dried in a belt furnace with a peak temperature of 150σ, followed by a temperature distribution with a peak temperature of 850σ x 9 minutes. The electrodes are formed by firing through a belt furnace having a belt furnace.
電極間を橋渡しするように上記のペーストを印刷し電極
と同じ方法で乾燥焼成して抵抗体被膜を形成した。抵抗
体被膜の大きさは１鰭角である。The above paste was printed so as to bridge between the electrodes, and dried and fired in the same manner as the electrodes to form a resistor film. The size of the resistor coating is one fin angle.
抵抗体は一組成当り２０個作成し、まずデジタルマルチ
メーターで焼成直後に初期抵抗値を測定した。この平抑
値をシート抵抗値（Ω１０）という。Twenty resistors were prepared for each composition, and the initial resistance value was measured using a digital multimeter immediately after firing. This suppression value is called a sheet resistance value (Ω10).
この上に黒色のガラスペーストを印刷乾燥し、今度はビ
ーク６００σ×５分間の台形の温度分布をもつベルト焼
成炉に通してガラスを焼成した。この焼成後の抵抗値を
測定し、初期抵抗値に対する焼成後の抵抗値の抵抗値変
化率（△Ｒ％）を求めた。A black glass paste was printed and dried on this, and the glass was fired in a belt firing furnace having a trapezoidal temperature distribution with a peak of 600σ x 5 minutes. The resistance value after firing was measured, and the resistance change rate (ΔR%) of the resistance value after firing with respect to the initial resistance value was determined.
第２表にその結果を示す。Table 2 shows the results.
第 ２ 表 （１１重量％］
（註）表中Ａ、ＢＳＯはガラスの種類
備考欄比・・比較例の略
実・・実施例の略
第２表をみると、ガラスのＡＢＣの何れにも成分として
ＢＯが含まれているが、ガラスとは別にＢＯを０．２〜
５．０重量％添加したものは何れも△Ｒ％が改善されて
いることが判る。Table 2 (11% by weight) (Note) In the table, A and BSO are the glass types in the notes column. BO is included as a component, but apart from glass, BO is added from 0.2 to
It can be seen that ΔR% is improved in all cases where 5.0% by weight is added.
（発明の効果〕
本発明によれば再度の加熱による抵抗値の変化を従来よ
りも小さくできる抵抗被膜を形成しうる組成物を提供で
きる。(Effects of the Invention) According to the present invention, it is possible to provide a composition capable of forming a resistive film in which the change in resistance value due to reheating can be made smaller than before.
Claims (2)
重量％を含有する組成のガラス粉末１０〜５０重量％、
ＲｕＯ＿２、Ｐｂ＿２Ｒｕ＿２Ｏ＿６＿〜＿７、Ｂｉ＿
２Ｒｕ＿２Ｏ＿６＿〜＿７の何れか少なくとも一種の粉
末５〜４０重量％、有機ビヒクル２０〜４０重量％、Ｂ
＿２Ｏ＿３粉末０．２〜５．０重量％の割合にこれらを
含有する厚膜抵抗体形成用組成物。(1) PbO35-70% by weight, SiO_215-40
10-50% by weight of glass powder with a composition containing % by weight;
RuO_2, Pb_2Ru_2O_6_～_7, Bi_
5-40% by weight of powder of at least one of 2Ru_2O_6_-_7, 20-40% by weight of organic vehicle, B
A composition for forming a thick film resistor containing 0.2 to 5.0% by weight of _2O_3 powder.
重量％を含有する組成のガラス粉末１０〜５０重量％、
ＲｕＯ＿２を少なくとも５重量％を含み、Ａｇ、Ｐｄの
一方又は両方とで２０〜６０重量％、有機ビヒクル２０
〜４０重量％、Ｂ＿２Ｏ＿３粉末０．２〜５．０重量％
の割合にこれらを含有する厚膜抵抗体形成用組成物。(2) PbO35-70% by weight, SiO_215-40
10-50% by weight of glass powder with a composition containing % by weight;
Contains at least 5% by weight of RuO_2, 20-60% by weight of one or both of Ag and Pd, and 20% by weight of an organic vehicle.
~40% by weight, B_2O_3 powder 0.2-5.0% by weight
A composition for forming a thick film resistor containing these in a proportion of .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1144385A JPH0654726B2 (en) | 1989-06-07 | 1989-06-07 | Thick film resistor forming composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1144385A JPH0654726B2 (en) | 1989-06-07 | 1989-06-07 | Thick film resistor forming composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH039501A true JPH039501A (en) | 1991-01-17 |
| JPH0654726B2 JPH0654726B2 (en) | 1994-07-20 |
Family
ID=15360907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1144385A Expired - Fee Related JPH0654726B2 (en) | 1989-06-07 | 1989-06-07 | Thick film resistor forming composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0654726B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5474711A (en) * | 1993-05-07 | 1995-12-12 | E. I. Du Pont De Nemours And Company | Thick film resistor compositions |
| WO2019059290A1 (en) * | 2017-09-22 | 2019-03-28 | 住友金属鉱山株式会社 | Composition for thick film resistor, thick film resistance paste, and thick film resistor |
| CN114883027A (en) * | 2022-05-05 | 2022-08-09 | 潮州三环（集团）股份有限公司 | Thick film resistor paste |
-
1989
- 1989-06-07 JP JP1144385A patent/JPH0654726B2/en not_active Expired - Fee Related
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5474711A (en) * | 1993-05-07 | 1995-12-12 | E. I. Du Pont De Nemours And Company | Thick film resistor compositions |
| WO2019059290A1 (en) * | 2017-09-22 | 2019-03-28 | 住友金属鉱山株式会社 | Composition for thick film resistor, thick film resistance paste, and thick film resistor |
| JP2019062178A (en) * | 2017-09-22 | 2019-04-18 | 住友金属鉱山株式会社 | Composition for thick film resistor, thick film resistance paste and thick film resistor |
| TWI793175B (en) * | 2017-09-22 | 2023-02-21 | 日商住友金屬鑛山股份有限公司 | Composition for thick film resistor, thick film resistor paste, and thick film resistor |
| CN114883027A (en) * | 2022-05-05 | 2022-08-09 | 潮州三环（集团）股份有限公司 | Thick film resistor paste |
| CN114883027B (en) * | 2022-05-05 | 2023-09-01 | 潮州三环（集团）股份有限公司 | Thick film resistor paste |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0654726B2 (en) | 1994-07-20 |
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