JPH06505768A - マグネトロンスパッタリング装置のためのアノード構造 - Google Patents
マグネトロンスパッタリング装置のためのアノード構造Info
- Publication number
- JPH06505768A JPH06505768A JP4501060A JP50106092A JPH06505768A JP H06505768 A JPH06505768 A JP H06505768A JP 4501060 A JP4501060 A JP 4501060A JP 50106092 A JP50106092 A JP 50106092A JP H06505768 A JPH06505768 A JP H06505768A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- length
- plates
- anode
- coating chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001755 magnetron sputter deposition Methods 0.000 title description 4
- 238000000576 coating method Methods 0.000 claims description 63
- 239000011248 coating agent Substances 0.000 claims description 56
- 238000004544 sputter deposition Methods 0.000 claims description 31
- 239000000463 material Substances 0.000 claims description 27
- 239000000758 substrate Substances 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 12
- 239000010409 thin film Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims 4
- 238000006073 displacement reaction Methods 0.000 claims 1
- 239000011888 foil Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 210000002784 stomach Anatomy 0.000 description 4
- 239000013077 target material Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000007667 floating Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000008168 Ficus benjamina Species 0.000 description 1
- 241000287462 Phalacrocorax carbo Species 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 239000005328 architectural glass Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3438—Electrodes other than cathode
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
- H01J37/3455—Movable magnets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US616,673 | 1990-11-21 | ||
| US07/616,673 US5106474A (en) | 1990-11-21 | 1990-11-21 | Anode structures for magnetron sputtering apparatus |
| PCT/US1991/008307 WO1992009718A1 (en) | 1990-11-21 | 1991-11-14 | Anode structures for magnetron sputtering apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH06505768A true JPH06505768A (ja) | 1994-06-30 |
Family
ID=24470501
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4501060A Pending JPH06505768A (ja) | 1990-11-21 | 1991-11-14 | マグネトロンスパッタリング装置のためのアノード構造 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5106474A (enExample) |
| EP (1) | EP0558604A1 (enExample) |
| JP (1) | JPH06505768A (enExample) |
| CA (1) | CA2096735A1 (enExample) |
| WO (1) | WO1992009718A1 (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020019991A (ja) * | 2018-07-31 | 2020-02-06 | キヤノントッキ株式会社 | 成膜装置及び電子デバイスの製造方法 |
| JP2022515745A (ja) * | 2018-12-21 | 2022-02-22 | エリコン サーフェス ソリューションズ エージー、プフェッフィコン | プラズマ処理を実行するためのプラズマ源のための磁石構成 |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2123479C (en) * | 1993-07-01 | 1999-07-06 | Peter A. Sieck | Anode structure for magnetron sputtering systems |
| US5616225A (en) * | 1994-03-23 | 1997-04-01 | The Boc Group, Inc. | Use of multiple anodes in a magnetron for improving the uniformity of its plasma |
| ZA956811B (en) | 1994-09-06 | 1996-05-14 | Boc Group Inc | Dual cylindrical target magnetron with multiple anodes |
| US5597459A (en) * | 1995-02-08 | 1997-01-28 | Nobler Technologies, Inc. | Magnetron cathode sputtering method and apparatus |
| US5812405A (en) * | 1995-05-23 | 1998-09-22 | Viratec Thin Films, Inc. | Three variable optimization system for thin film coating design |
| CH691686A5 (de) * | 1995-11-16 | 2001-09-14 | Unaxis Balzers Ag | Vakuumbehandlungskammer. |
| US6110540A (en) * | 1996-07-12 | 2000-08-29 | The Boc Group, Inc. | Plasma apparatus and method |
| US6436252B1 (en) | 2000-04-07 | 2002-08-20 | Surface Engineered Products Corp. | Method and apparatus for magnetron sputtering |
| US6440280B1 (en) * | 2000-06-28 | 2002-08-27 | Sola International, Inc. | Multi-anode device and methods for sputter deposition |
| JP4703828B2 (ja) * | 2000-09-07 | 2011-06-15 | 株式会社アルバック | スパッタリング装置及び薄膜製造方法 |
| US6495000B1 (en) * | 2001-07-16 | 2002-12-17 | Sharp Laboratories Of America, Inc. | System and method for DC sputtering oxide films with a finned anode |
| US7198699B2 (en) * | 2002-05-06 | 2007-04-03 | Guardian Industries Corp. | Sputter coating apparatus including ion beam source(s), and corresponding method |
| US20050224343A1 (en) * | 2004-04-08 | 2005-10-13 | Richard Newcomb | Power coupling for high-power sputtering |
| US20060065524A1 (en) * | 2004-09-30 | 2006-03-30 | Richard Newcomb | Non-bonded rotatable targets for sputtering |
| US20060096855A1 (en) * | 2004-11-05 | 2006-05-11 | Richard Newcomb | Cathode arrangement for atomizing a rotatable target pipe |
| US20060278521A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for controlling ion density and energy using modulated power signals |
| US20060278524A1 (en) * | 2005-06-14 | 2006-12-14 | Stowell Michael W | System and method for modulating power signals to control sputtering |
| US20070012558A1 (en) * | 2005-07-13 | 2007-01-18 | Applied Materials, Inc. | Magnetron sputtering system for large-area substrates |
| US20070095281A1 (en) * | 2005-11-01 | 2007-05-03 | Stowell Michael W | System and method for power function ramping of microwave liner discharge sources |
| US7842355B2 (en) * | 2005-11-01 | 2010-11-30 | Applied Materials, Inc. | System and method for modulation of power and power related functions of PECVD discharge sources to achieve new film properties |
| US9117637B2 (en) * | 2005-11-04 | 2015-08-25 | Von Ardenne Gmbh | Redundant anode sputtering method and assembly |
| JP4142706B2 (ja) * | 2006-09-28 | 2008-09-03 | 富士フイルム株式会社 | 成膜装置、成膜方法、絶縁膜、誘電体膜、圧電膜、強誘電体膜、圧電素子および液体吐出装置 |
| JP2010507881A (ja) * | 2006-10-19 | 2010-03-11 | アプライド・プロセス・テクノロジーズ・インコーポレーテッド | クローズドドリフトイオン源 |
| EP1923902B2 (de) * | 2006-11-14 | 2014-07-23 | Applied Materials, Inc. | Magnetron-Sputterquelle, Sputter-Beschichtungsanlage und Verfahren zur Beschichtung eines Substrats |
| US8557093B2 (en) * | 2007-03-22 | 2013-10-15 | Sunpower Corporation | Deposition system with electrically isolated pallet and anode assemblies |
| US8652310B2 (en) * | 2008-07-24 | 2014-02-18 | Seagate Technology Llc | Trim magnets to adjust erosion rate of cylindrical sputter targets |
| CN102224561B (zh) * | 2008-11-24 | 2014-12-31 | 欧瑞康先进科技股份有限公司 | 射频溅射配置 |
| EP2325350A1 (en) * | 2009-11-24 | 2011-05-25 | Applied Materials, Inc. | Anode rod for a sputtering system |
| WO2013190141A1 (de) * | 2012-06-22 | 2013-12-27 | Von Ardenne Anlagentechnik Gmbh | Verfahren und vorrichtung zur vorbehandlung eines beschichteten oder unbeschichteten substrats |
| US9508532B2 (en) * | 2013-03-13 | 2016-11-29 | Bb Plasma Design Ab | Magnetron plasma apparatus |
| US9435028B2 (en) | 2013-05-06 | 2016-09-06 | Lotus Applied Technology, Llc | Plasma generation for thin film deposition on flexible substrates |
| DE102014207447A1 (de) | 2014-04-17 | 2015-10-22 | Magna International Inc. | Beschichtetes Stahlbauteil, Verfahren zur Herstellung des Stahlbauteils und Herstellungsanlage |
| US10811236B2 (en) * | 2014-10-29 | 2020-10-20 | General Plasma, Inc. | Magnetic anode for sputter magnetron cathode |
| DE102015104616A1 (de) * | 2015-03-26 | 2016-09-29 | Von Ardenne Gmbh | Magnetronanordnung und Verfahren zum Betreiben einer Rohrmagnetronanordnung |
| KR102636365B1 (ko) * | 2016-05-25 | 2024-02-15 | 삼성디스플레이 주식회사 | 스퍼터링 장치 및 이를 이용한 스퍼터링 방법 |
| CN106011766B (zh) * | 2016-07-15 | 2018-09-04 | 森科五金(深圳)有限公司 | 一种真空炉体及其使用的辅助阳极 |
| DE102018112335A1 (de) * | 2018-05-23 | 2019-11-28 | Hartmetall-Werkzeugfabrik Paul Horn Gmbh | Magnetronsputtervorrichtung |
| US12205805B2 (en) * | 2021-07-20 | 2025-01-21 | Canon Kabushiki Kaisha | Sputtering apparatus, film formation method, and method for manufacturing product |
| US20240194464A1 (en) * | 2022-12-09 | 2024-06-13 | Intevac, Inc. | Stable ground anode for thin film processing |
| WO2025019504A2 (en) * | 2023-07-18 | 2025-01-23 | Intevac, Inc. | Actively cooled anode for sputtering processes |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4166018A (en) * | 1974-01-31 | 1979-08-28 | Airco, Inc. | Sputtering process and apparatus |
| JPS51117933A (en) * | 1975-04-10 | 1976-10-16 | Tokuda Seisakusho | Spattering apparatus |
| CH649471A5 (de) * | 1980-05-09 | 1985-05-31 | Leuenberger H | Elektrotherapeutische einrichtung mit einer auf eine vom gipsverband bedeckte koerperstelle anbringbaren elektrode. |
| US4422916A (en) * | 1981-02-12 | 1983-12-27 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| US4356073A (en) * | 1981-02-12 | 1982-10-26 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| DD217964A3 (de) * | 1981-10-02 | 1985-01-23 | Ardenne Manfred | Einrichtung zum hochratezerstaeuben nach dem plasmatronprinzip |
| US4394236A (en) * | 1982-02-16 | 1983-07-19 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| US4445997A (en) * | 1983-08-17 | 1984-05-01 | Shatterproof Glass Corporation | Rotatable sputtering apparatus |
| US4545882A (en) * | 1983-09-02 | 1985-10-08 | Shatterproof Glass Corporation | Method and apparatus for detecting sputtering target depletion |
| US4466877A (en) * | 1983-10-11 | 1984-08-21 | Shatterproof Glass Corporation | Magnetron cathode sputtering apparatus |
| US4519885A (en) * | 1983-12-27 | 1985-05-28 | Shatterproof Glass Corp. | Method and apparatus for changing sputtering targets in a magnetron sputtering system |
| DE3427587A1 (de) * | 1984-07-26 | 1986-02-06 | Leybold-Heraeus GmbH, 5000 Köln | Zerstaeubungseinrichtung fuer katodenzerstaeubungsanlagen |
| DE3721373A1 (de) * | 1987-06-29 | 1989-01-12 | Leybold Ag | Beschichtungsvorrichtung |
| US5047131A (en) * | 1989-11-08 | 1991-09-10 | The Boc Group, Inc. | Method for coating substrates with silicon based compounds |
| US5096562A (en) * | 1989-11-08 | 1992-03-17 | The Boc Group, Inc. | Rotating cylindrical magnetron structure for large area coating |
-
1990
- 1990-11-21 US US07/616,673 patent/US5106474A/en not_active Expired - Fee Related
-
1991
- 1991-11-14 WO PCT/US1991/008307 patent/WO1992009718A1/en not_active Ceased
- 1991-11-14 CA CA002096735A patent/CA2096735A1/en not_active Abandoned
- 1991-11-14 JP JP4501060A patent/JPH06505768A/ja active Pending
- 1991-11-14 EP EP92900481A patent/EP0558604A1/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020019991A (ja) * | 2018-07-31 | 2020-02-06 | キヤノントッキ株式会社 | 成膜装置及び電子デバイスの製造方法 |
| KR20200014170A (ko) * | 2018-07-31 | 2020-02-10 | 캐논 톡키 가부시키가이샤 | 성막 장치 및 전자 디바이스의 제조 방법 |
| JP2022515745A (ja) * | 2018-12-21 | 2022-02-22 | エリコン サーフェス ソリューションズ エージー、プフェッフィコン | プラズマ処理を実行するためのプラズマ源のための磁石構成 |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2096735A1 (en) | 1992-05-22 |
| EP0558604A4 (enExample) | 1994-03-09 |
| WO1992009718A1 (en) | 1992-06-11 |
| EP0558604A1 (en) | 1993-09-08 |
| US5106474A (en) | 1992-04-21 |
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