JPH0631190B2 - Method of making organic thin film crystal - Google Patents

Method of making organic thin film crystal

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Publication number
JPH0631190B2
JPH0631190B2 JP17343185A JP17343185A JPH0631190B2 JP H0631190 B2 JPH0631190 B2 JP H0631190B2 JP 17343185 A JP17343185 A JP 17343185A JP 17343185 A JP17343185 A JP 17343185A JP H0631190 B2 JPH0631190 B2 JP H0631190B2
Authority
JP
Japan
Prior art keywords
crystal
thin film
film
organic thin
glass plate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP17343185A
Other languages
Japanese (ja)
Other versions
JPS6236095A (en
Inventor
靖 五月女
良武 大西
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP17343185A priority Critical patent/JPH0631190B2/en
Publication of JPS6236095A publication Critical patent/JPS6236095A/en
Publication of JPH0631190B2 publication Critical patent/JPH0631190B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は有機薄膜結晶の作成方法に関するものである。TECHNICAL FIELD The present invention relates to a method for producing an organic thin film crystal.

(従来の技術) 有機物結晶の作成方法として、気相からの結晶成長、溶
液からの結晶成長、溶融状態からの結晶成長の3種が用
いられている。
(Prior Art) As a method for producing an organic crystal, there are used three types of crystal growth from a vapor phase, crystal growth from a solution, and crystal growth from a molten state.

(この3種の結晶成長方法については、丸善刊、新実験
化学講座、第1巻、基本操作II、PP・639−750,
によくまとめられている。) (発明が解決しようとする問題点) しかしながら、有機薄膜結晶の作成はこれまでほとんど
検討されたことがなく、その報告も高分子化合物の結晶
に限られている。(例えば、泉の総合報告(日本結晶成
長学会誌、第11巻、PP.117−134,1984
年)には、ポリエチレン薄膜結晶やポリアセチレン薄膜
結晶の例が述べられている。)高分子化合物ではない有
機薄膜単結晶の作成方法には適当なものがないという現
状である。
(For these three types of crystal growth methods, see Maruzen, New Experimental Chemistry Course, Volume 1, Basic Operation II, PP.639-750,
It is well summarized in. (Problems to be Solved by the Invention) However, preparation of organic thin film crystals has hardly been studied so far, and the report is limited to crystals of polymer compounds. (For example, Izumi's comprehensive report (Journal of the Crystal Growth Society of Japan, Vol. 11, PP. 117-134, 1984)
(Year) describes examples of polyethylene thin film crystals and polyacetylene thin film crystals. The present situation is that there is no suitable method for producing an organic thin film single crystal that is not a polymer compound.

本発明の目的は、高分子膜上に有機薄膜単結晶を作成す
る方法を提供することにある。
An object of the present invention is to provide a method for producing an organic thin film single crystal on a polymer film.

(問題点を解決するための手段) 本発明によれば、高分子膜中に分散した有機結晶を種結
晶として、その膜上で有機物を薄膜状に結晶化させる有
機薄膜結晶の作成方法において、高分子膜の面内のある
方向に温度勾配をつけ、かかる方向に結晶成長させるこ
とを特徴とする有機薄膜結晶の作成方法が得られる。
(Means for Solving the Problems) According to the present invention, in a method for producing an organic thin film crystal in which an organic crystal dispersed in a polymer film is used as a seed crystal and an organic substance is crystallized into a thin film on the film, A method for producing an organic thin film crystal is obtained, which is characterized in that a temperature gradient is applied in a certain direction in a plane of a polymer film and crystal growth is performed in such a direction.

本発明で用いる高分子膜素材は薄膜形成能があれば何で
も良い。一例としては、ポリスチレン、ポリ塩化ビニル
等があげられる。本発明で用いる種結晶となるる化合物
は、高分子膜中に結晶として分散でき、かつ目的とする
化合物の結晶成長を引き起こし得る化合物であれば何で
も良い。本発明の種結晶を含む高分子膜の面内方向の温
度勾配はいかなる方法によって持たせても良いが、面内
のある方向のみに勾配が得られなくてはならない。一例
としては、基板の一辺のみを熱源に接触させる方法や、
温度勾配を持った液体や気体中に基板を設置する方法が
あげられる。温度勾配の大きさやその絶対温度は種結晶
と結晶成長させる化合物の組み合わせによって決まる
が、温度勾配が少なすぎると、種結晶が膜全体に存在す
るために多結晶化する場合があるため注意して設定する
必要がある。かかる高分子膜の面内のある方向に温度勾
配を持たせる際に、面と垂直な方向に勾配を生じても差
し支えない。
The polymer film material used in the present invention may be any material as long as it has a thin film forming ability. Examples include polystyrene and polyvinyl chloride. The compound used as the seed crystal used in the present invention may be any compound as long as it can be dispersed as crystals in the polymer film and can cause crystal growth of the target compound. The temperature gradient in the in-plane direction of the polymer film containing the seed crystal of the present invention may be provided by any method, but the gradient must be obtained only in a certain direction in the plane. As an example, a method of contacting only one side of the substrate with a heat source,
There is a method of placing the substrate in a liquid or gas having a temperature gradient. The magnitude of the temperature gradient and its absolute temperature are determined by the combination of the seed crystal and the compound used to grow the crystal, but if the temperature gradient is too small, the seed crystal may be polycrystallized because it exists in the entire film. Must be set. When a temperature gradient is given in a certain direction within the plane of such a polymer film, a gradient may be generated in a direction perpendicular to the plane.

(作 用) 一般に単結晶を種結晶から成長させる場合、種結晶は1
個である必要がある。複数の種結晶があると、それぞれ
から成長が始まり単結晶となることはない。
(Operation) When a single crystal is grown from a seed crystal, the seed crystal is generally 1
Must be individual. If there are multiple seed crystals, growth does not start from each and does not become a single crystal.

しかしながら本発明においては、複数の種結晶があるに
もかかわらず、温度勾配がついているために、最も早く
成長開始温度に達した種結晶のみから成長が起こる。一
旦成長が始まると、温度勾配に応じて結晶化が進行し、
かつ種結晶からの成長(ヘテロエピタキシャル成長)よ
りも、成長した結晶がさらに成長(ホモエピタキシャル
成長)する方が速いため、単結晶が得られる。
However, in the present invention, the growth occurs only from the seed crystal that has reached the growth start temperature earliest because of the temperature gradient despite the presence of a plurality of seed crystals. Once growth begins, crystallization progresses according to the temperature gradient,
Moreover, a single crystal is obtained because the grown crystal grows faster (homoepitaxial growth) than the seed crystal grows (heteroepitaxial growth).

(実施例) 第1図は本発明の実施例を示す模式図である。18mm×
18mmのガラス板2,(厚さ約0.15mm)に、分子量
60万のポリスチレン(0.50g)および2−ヒドロ
キシ−4−メトキシベンジリデン−4′−ブロモアニリ
ン(以下、MSBrAと略す)(0.20g)を溶解
した1,4−ジオキサン(13.0g)溶液を5000
rpmでスピン塗布した。80℃で1時間乾燥してMS
BrA微結晶が膜中に分散したポリスチレン膜3が、
前記ガラス板2上に得られた。
(Example) FIG. 1 is a schematic view showing an example of the present invention. 18 mm x
Polystyrene (0.50 g) having a molecular weight of 600,000 and 2-hydroxy-4-methoxybenzylidene-4′-bromoaniline (hereinafter abbreviated as MS 4 BrA) are placed on an 18 mm glass plate 2 (thickness: about 0.15 mm). 5000 solution of 1,4-dioxane (13.0 g) in which (0.20 g) was dissolved
Spin-coated at rpm. MS at 80 ℃ for 1 hour
4 The polystyrene film 3 in which BrA microcrystals are dispersed in the film is
Obtained on the glass plate 2.

以下の結晶成長実験には融点ブロック1を熱源として用
いた。膜3を塗布した前記ガラス板を一辺のみが直接融
点ブロックに接触する様にプラスチック製のスペーサ7
を用いて傾斜させて静置し2.0mgの2−ヒドロキシ−
4−メトキシベンジリデン−4′−ブチルアニリン4
(以下、MSBuAと略す)をのせ、融点ブロック1
を50℃まで加熱して液晶状態にした。50℃に保った
まま、その上に何も塗布していないガラス板5をのせ
て、毎分およそ0.5℃の速度で32℃まで冷却した。
32℃で10分間ほど静置するとMSBuAの薄膜単
結晶4が、膜3と、上にのせたガラス板5の間に得られ
た。顕微鏡観察によると、結晶成長は融点ブロック1と
接触している辺の対向辺から開始し、融点ブロック1と
接触している辺に向かって進行していき、複数の細長い
単結晶を与えることがわかる。
Melting point block 1 was used as a heat source in the following crystal growth experiments. A spacer 7 made of plastic so that only one side of the glass plate coated with the film 3 directly contacts the melting point block
Inclining and standing still with 2.0 mg of 2-hydroxy-
4-Methoxybenzylidene-4'-butylaniline 4
(Hereinafter, abbreviated as MS 4 BuA), and the melting point block 1
Was heated to 50 ° C. to be in a liquid crystal state. While maintaining the temperature at 50 ° C., the glass plate 5 with nothing coated thereon was placed thereon and cooled to 32 ° C. at a rate of about 0.5 ° C. per minute.
After standing at 32 ° C. for about 10 minutes, a thin film single crystal 4 of MS 4 BuA was obtained between the film 3 and the glass plate 5 placed thereon. According to the microscopic observation, crystal growth starts from the side opposite to the side in contact with the melting point block 1 and progresses toward the side in contact with the melting point block 1 to give a plurality of elongated single crystals. Recognize.

なお、膜3上に成長した有機薄膜結晶の結晶−液晶転移
温度は、36.5℃であり、この薄膜は365nmの紫
外光照射で赤変する。また、ガラス板2の1辺を接触さ
せる方法の他に、ガラス板2の角の1点を接触させて同
様の実験を行なっても単結晶が作成できた。
The crystal-liquid crystal transition temperature of the organic thin film crystal grown on the film 3 is 36.5 ° C., and this thin film turns red by irradiation with 365 nm ultraviolet light. In addition to the method of contacting one side of the glass plate 2, a single crystal could be formed by performing a similar experiment by contacting one corner of the glass plate 2.

さらに、膜3上で、2−ヒドロキシ−4−メトキシベン
ジリデン−4′−ヘプチルアニリン、2−ヒドロキシ−
4−メトキシベンジリデン−4′−オクチルアニリン等
サリチリデンアニリン類の薄膜結晶も同様な方法で作成
できた。結晶成長時に上からのせるガラス板5は必ずし
も必要でなく、ガラス板5なしでも薄膜結晶は作成可能
であった。しかしながら、均一な膜厚を得るためには、
ガラス板には限らないが、何らかのおおいがある事が望
ましい。
Furthermore, on the film 3, 2-hydroxy-4-methoxybenzylidene-4'-heptylaniline, 2-hydroxy-
Thin film crystals of salicylideneanilines such as 4-methoxybenzylidene-4'-octylaniline could be prepared by the same method. The glass plate 5 placed on the crystal growth was not always necessary, and thin film crystals could be formed without the glass plate 5. However, in order to obtain a uniform film thickness,
It is not limited to a glass plate, but it is desirable that it has some cover.

参考例として、前述の薄膜結晶作成を、高分子膜を塗布
したガラス板を融点ブロックに密着させて行なったとこ
ろ、結晶成長が複数の点から起こり、全体が薄膜単結晶
となることはなかった。よって本発明の温度勾配は、全
体を単結晶化させるために有効であることが明らかであ
る。
As a reference example, when the above-mentioned thin film crystal was formed by adhering a glass plate coated with a polymer film to a melting point block, crystal growth occurred from a plurality of points, and the whole did not become a thin film single crystal. . Therefore, it is clear that the temperature gradient of the present invention is effective for single crystallizing the whole.

(発明の効果) 本発明によって、有機薄膜単結晶を高分子膜上に作成す
る方法が得られた。本実施例では、高分子膜中に分散さ
せた種結晶と、成長し薄膜結晶となる化合物は異なる
が、同一の化合物であっても差し支えない。また、高分
子膜素材もポリスチレンに限られるものではなく、その
塗布法もスピン塗布のみではなく、キャスト法、界面製
膜法等も使用できる。さらに必ずしもガラス板上に固定
されている必要はない。
(Effect of the Invention) According to the present invention, a method for producing an organic thin film single crystal on a polymer film was obtained. In this example, the seed crystal dispersed in the polymer film is different from the compound that grows into a thin film crystal, but the same compound may be used. Further, the polymer film material is not limited to polystyrene, and its coating method may be not only spin coating but also a casting method, an interface film forming method, or the like. Furthermore, it does not necessarily have to be fixed on the glass plate.

【図面の簡単な説明】[Brief description of drawings]

第1図は、本発明の実施例を示した図である。 図において、 1は温度制御可能な熱源、2はガラス板、3は種結晶の
分散した高分子フィルム、4は被結晶化層(例えば液
晶)、5はガラス板によるおおい、6は全体のカバー、
7はプラスチック製のスペーサをそれぞれ示す。
FIG. 1 is a diagram showing an embodiment of the present invention. In the figure, 1 is a heat source whose temperature can be controlled, 2 is a glass plate, 3 is a polymer film in which seed crystals are dispersed, 4 is a layer to be crystallized (for example, liquid crystal), 5 is a glass plate covering, and 6 is the entire cover ,
Reference numerals 7 denote plastic spacers, respectively.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】高分子膜中に分散した有機結晶を種結晶と
してその膜上で有機物を薄膜状に結晶化させる有機薄膜
結晶の作成方法において、高分子膜の面内のある方向に
温度勾配をつけ、かかる方向に結晶成長させることを特
徴とする有機薄膜結晶の作成方法。
1. A method for producing an organic thin film crystal in which an organic crystal dispersed in a polymer film is used as a seed crystal to crystallize an organic substance on the film in a thin film shape, wherein a temperature gradient is applied in a certain direction within a plane of the polymer film. And a method for producing an organic thin film crystal, which comprises growing a crystal in such a direction.
JP17343185A 1985-08-06 1985-08-06 Method of making organic thin film crystal Expired - Lifetime JPH0631190B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17343185A JPH0631190B2 (en) 1985-08-06 1985-08-06 Method of making organic thin film crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17343185A JPH0631190B2 (en) 1985-08-06 1985-08-06 Method of making organic thin film crystal

Publications (2)

Publication Number Publication Date
JPS6236095A JPS6236095A (en) 1987-02-17
JPH0631190B2 true JPH0631190B2 (en) 1994-04-27

Family

ID=15960326

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17343185A Expired - Lifetime JPH0631190B2 (en) 1985-08-06 1985-08-06 Method of making organic thin film crystal

Country Status (1)

Country Link
JP (1) JPH0631190B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2679708B2 (en) * 1987-08-27 1997-11-19 富士通株式会社 Organic film fabrication method
JPH01172297A (en) * 1987-12-26 1989-07-07 Toray Ind Inc Production of organic single crystal
JP3667215B2 (en) 1999-08-31 2005-07-06 キヤノン株式会社 Single crystalline thin film and method for producing the same

Also Published As

Publication number Publication date
JPS6236095A (en) 1987-02-17

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