JPH01133994A - Method and device for liquid-phase growth - Google Patents
Method and device for liquid-phase growthInfo
- Publication number
- JPH01133994A JPH01133994A JP29300087A JP29300087A JPH01133994A JP H01133994 A JPH01133994 A JP H01133994A JP 29300087 A JP29300087 A JP 29300087A JP 29300087 A JP29300087 A JP 29300087A JP H01133994 A JPH01133994 A JP H01133994A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- phase growth
- liquid phase
- quartz tube
- boat
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007791 liquid phase Substances 0.000 title claims description 37
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 239000010453 quartz Substances 0.000 claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052799 carbon Inorganic materials 0.000 abstract description 5
- 239000013078 crystal Substances 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000003685 thermal hair damage Effects 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
基板の表面に液相成長により結晶膜を形成する液相成長
方法及び装置に関し、
液相成長用ポート台から基板セット部を分離独立せしめ
て、成長温度条件に達するまで清浄なガス中に位置せし
め、基板が高熱により受ける熱ダメージを解消すること
を目的とし、
抵抗加熱炉内に石英管を介してスライドする複数に区割
りされてなる溶液収容枠を載置したポート台から、基板
セット部を分離せしめて前記抵抗加熱炉から放して置き
、前記溶液収容枠の溶液が液相成長条件になると、前記
基板セット部を前記ポート台に引き寄せ所定時間経過後
前記溶液収容枠をスライドせしめて液相成長を行ない、
その装置を抵抗加熱炉と、該抵抗炉内に挿入する石英管
と、該石英管内に収容するポート台と、該ポート台に載
置する複数に区割されたスライドする溶液収容枠と、前
記ポート台から分離したスライド自在な基板セットで構
成する。[Detailed Description of the Invention] [Summary] Regarding a liquid phase growth method and apparatus for forming a crystal film on the surface of a substrate by liquid phase growth, the substrate setting section is separated and independent from the liquid phase growth port stand, and the growth temperature is controlled. In order to eliminate thermal damage caused to the substrate by high heat by keeping it in a clean gas until the condition is reached, a solution storage frame divided into multiple sections that slides through a quartz tube is placed in a resistance heating furnace. The substrate set part is separated from the port stand where it was placed and left out of the resistance heating furnace, and when the solution in the solution storage frame reaches liquid phase growth conditions, the substrate set part is pulled to the port stand and after a predetermined period of time has elapsed. Performing liquid phase growth by sliding the solution storage frame,
The apparatus includes a resistance heating furnace, a quartz tube inserted into the resistance furnace, a port stand accommodated in the quartz tube, a sliding solution storage frame divided into a plurality of parts placed on the port stand, and It consists of a slidable board set that is separated from the port stand.
本発明は、抵抗加熱炉内に挿通した石英管内に収容して
基板セット部に載置した基板の表面に、液相成長により
結晶膜を形成する液相成長方法及び装置に関する。The present invention relates to a liquid phase growth method and apparatus for forming a crystal film by liquid phase growth on the surface of a substrate placed in a substrate setting section and housed in a quartz tube inserted into a resistance heating furnace.
液相成長により基板の表面に結晶膜を形成するのに、基
板を溶液に隣接搭載する液相成長用ポートが用いられて
いるが、この液相成長用ポートでは結晶成長温度条件に
達するまで溶液と基板を同時に加熱される構造であるの
で、基板の表面が熱ダメージを受け、液相成長膜の結晶
性に悪影響を与えるので、基板が熱ダメージを受けない
構造の液相成長方法及び装置の改善が強く要望されてい
る。To form a crystalline film on the surface of a substrate by liquid phase growth, a liquid phase growth port is used in which the substrate is mounted adjacent to a solution. Since the substrate is heated at the same time, the surface of the substrate is thermally damaged and the crystallinity of the liquid phase grown film is adversely affected. Improvement is strongly requested.
第４図及び第５図は、従来の液相成長方法及び装置を説
明する図で、第４図は側断面図、第５図は正面図である
。4 and 5 are diagrams for explaining a conventional liquid phase growth method and apparatus, with FIG. 4 being a side sectional view and FIG. 5 being a front view.
図において、抵抗加熱炉６内に石英管７を挿通し、該石
英管７内にカーボンからなり基板セット凹部５を設けた
ポート台１の、該基板セット凹部５にＩｎＰ（インジウ
ム−燐）等からなる基板１２をセットし、該ポート台１
にスライダポート摺動部材８を備えたスライダポート２
を嵌合する。In the figure, a quartz tube 7 is inserted into a resistance heating furnace 6, and a board setting recess 5 made of carbon is provided in the quartz tube 7. Set the board 12 consisting of
a slider port 2 equipped with a slider port sliding member 8;
mate.
そうして、スライダポート２に設けた複数（図面では４
個を示す）の溶液収容枠２１内に溶液４ （ＩｎＰ等で
常温では固体）を収容（図面では３箇所を示すが、結晶
する膜の層数に応じ任意に収容する。）して蓋３を嵌め
たのち、ポート台ｌを石英管７に挿入して、溶液４を収
容したスライダポート２が石英管７の外周に備えた抵抗
加熱炉６の中央部に位置するようにし、前記石英管７の
一方から清浄な例えばＨ２ガスを流入しながら加熱炉６
に通電して石英管７内が液相成長温度条件に達するまで
加熱する。Then, a plurality of (4 in the drawing) provided in slider port 2
A solution 4 (InP, etc., solid at room temperature) is stored in the solution storage frame 21 (in the figure, three locations are shown, but the solution can be accommodated arbitrarily depending on the number of layers of the film to be crystallized). After fitting, the port stand l is inserted into the quartz tube 7 so that the slider port 2 containing the solution 4 is located in the center of the resistance heating furnace 6 provided on the outer periphery of the quartz tube 7. The heating furnace 6 is heated while flowing clean, for example, H2 gas from one side of the
The quartz tube 7 is heated until the inside of the quartz tube 7 reaches the liquid phase growth temperature condition.
石英管７内が液相成長温度条件の温度に達すると、溶液
収容枠２１に収容された固体状態のＩｎＰが溶融して溶
液４となり、この状態で、スライダポート摺動部材８を
図示しない駆動装置で矢印方向に移動して、基板１２上
に順次液相成長膜を形成する。When the inside of the quartz tube 7 reaches the temperature of the liquid phase growth temperature condition, the solid state InP accommodated in the solution storage frame 21 melts and becomes the solution 4. In this state, the slider port sliding member 8 is driven (not shown). The device is moved in the direction of the arrow to sequentially form liquid phase growth films on the substrate 12.
上記従来の液相成長方法及び装置にあっては、溶液が液
相成長温度条件に達するまで基板が高温（５００’ Ｃ
〜９００ °Ｃ）に曝されているので、基板表面は大
きな熱ダメージ（例えば結晶中のＰ（燐）が抜は出しピ
ンホールができる）を受けるので、これを防止するため
基板保護板を用いる方法もあるが、この基板保護板を用
いても余り効果がなく、液相成長膜の結晶性に悪影響を
与えるという問題点があった。In the conventional liquid phase growth method and apparatus described above, the substrate is kept at a high temperature (500'C) until the solution reaches the liquid phase growth temperature condition.
~900 °C), the surface of the substrate is subject to significant thermal damage (for example, P (phosphorus) in the crystal is extracted and pinholes are formed), so a substrate protection plate is used to prevent this. Although there is a method, there is a problem that using this substrate protection plate is not very effective and adversely affects the crystallinity of the liquid phase grown film.
本発明は、上記の問題点を解決して基板を液相成長条件
に達するまで溶液収容枠を取着したポート台から分離す
るようにした液相成長方法及び装置を提供するものであ
る。The present invention solves the above problems and provides a liquid phase growth method and apparatus in which the substrate is separated from the port stand to which the solution storage frame is attached until the liquid phase growth conditions are reached.
すなわち、抵抗加熱炉内に石英管を介してスライドする
複数に区割りされてなる溶液収容枠を載置したポート台
から、基板セント部を分離せしめて抵抗加熱炉から離し
て置き、前記溶液収容枠の溶液が液相成長条件になると
、前記基板セット部を前記ポート台に引き寄せ所定時間
経過後前記溶液収容枠をスライドせしめて液相成長を行
ない、その装置を抵抗加熱炉と、該抵抗炉内に挿入する
石英管と、該石英管内に収容するポート台と、該ポート
台に載置する複数に区割されたスライドする溶液収容枠
と、前記ポート台から分離したスライド自在な基板セッ
トで構成したことによって解決される。That is, from a port stand on which a solution storage frame divided into a plurality of sections that slides into the resistance heating furnace via a quartz tube is placed, the substrate center portion is separated and placed away from the resistance heating furnace, and the solution storage frame is When the solution reaches the liquid phase growth conditions, the substrate setting section is pulled to the port stand, and after a predetermined period of time, the solution storage frame is slid to perform liquid phase growth. It consists of a quartz tube inserted into the quartz tube, a port stand housed in the quartz tube, a slideable solution storage frame divided into a plurality of parts placed on the port stand, and a slidable substrate set separated from the port stand. It is resolved by what you do.
このようにした液相成長方法及び装置は、基板セット部
をポート台から摺動可能に分離したことにより基板表面
の熱ダメージを解消することができる。The liquid phase growth method and apparatus described above can eliminate thermal damage to the substrate surface by separating the substrate set portion from the port stand in a slidable manner.
第１図〜第３図は、本発明の一実施例を説明する図で、
第１図は液相成長方法及び装置の側断面図、第２図は液
相成長方法及び装置の平面図、第３図は第２図の拡大正
面図で、第４図と同等の部分については同一符号を付し
ている。FIGS. 1 to 3 are diagrams explaining one embodiment of the present invention,
Figure 1 is a side sectional view of the liquid phase growth method and apparatus, Figure 2 is a plan view of the liquid phase growth method and apparatus, and Figure 3 is an enlarged front view of Figure 2, showing the same parts as Figure 4. are given the same reference numerals.
図において、抵抗加熱炉６内に石英管７を挿通し、該石
英管７内にカーボンからなり両側に凹部１０１を形成し
たポート台１０と、該ポート台１０に摺動可能に設けた
カーボンからなり、基板セット凹部５を形成しポート台
１０の凹部１０１に嵌合する基板セット部摺動部材９か
らなる基板セット部１１とで構成し、前記基板セット凹
部５にＩｎＰ （インジュームー燐）等からなる基板１
２をセットし、前記ポート台１０にスライダポート摺動
部材８を備えたスライダポート２を嵌合する。In the figure, a quartz tube 7 is inserted into a resistance heating furnace 6, and a port pedestal 10 made of carbon and having recesses 101 formed on both sides is inserted into the quartz tube 7, and a port pedestal 10 made of carbon is slidably provided on the port pedestal 10. The board setting part 11 is formed of a board setting recess 5 and a board setting part sliding member 9 that fits into the recess 101 of the port stand 10. substrate 1
2, and the slider port 2 provided with the slider port sliding member 8 is fitted to the port base 10.
そうして、スライダポート２に設けた複数（図面では４
個を示す）の溶液収容枠２１内に溶液４（ＩｎＰ等で常
温では固体）を収容（図面では３箇所を示すが、結晶す
る膜の層故に応じ任意に収容する。）し、蓋３を嵌めた
ポート台１０を基板セント部工１を分離した状態で石英
管７に挿入すると、該基板セット部１１はＨ２ガス流入
口近辺の清浄な領域に位置せしめ、スライダポート２は
石英管７の外周に備えた抵抗加熱炉６の中央部に位置せ
しめる。Then, a plurality of (4 in the drawing) provided in slider port 2
The solution 4 (InP, etc., solid at room temperature) is stored in the solution storage frame 21 (in the figure, three locations are shown, but they can be accommodated at any location depending on the layer of the crystallizing film), and the lid 3 is closed. When the fitted port stand 10 is inserted into the quartz tube 7 with the substrate center part 1 separated, the board setting part 11 is positioned in a clean area near the H2 gas inlet, and the slider port 2 is inserted into the quartz tube 7. It is located at the center of the resistance heating furnace 6 provided on the outer periphery.
そして前記石英管７の一方から清浄な例えばＨ２ガスを
流入しながら加熱炉６に通電して石英管７内が液相成長
温度条件に達するまで加熱する。Then, while flowing clean, for example, H2 gas from one side of the quartz tube 7, electricity is applied to the heating furnace 6 to heat the inside of the quartz tube 7 until the temperature condition for liquid phase growth is reached.
かくして、石英管７内が液相成長温度条件に達すると、
スライダポート２内に収容された固体状態のＩｎＰ （
インジウム−燐）が熔融して溶液４となり、この状態で
、前記基板セント部摺動部材９を図示しない駆動装置で
矢印Ａ方向に移動して、基板セット部１１がポート台１
０に第１図の二点鎖線で示す如く密接せしめて、基板セ
ット部１１の基板１２が所定温度に達するまで経過せし
めた後、スライダポート摺動部材８を図示しない駆動装
置で矢印Ｂ方向に移動して、基板１２上に順次液相成長
膜を形成する。Thus, when the inside of the quartz tube 7 reaches the liquid phase growth temperature conditions,
Solid-state InP (
Indium-phosphorus) is melted to form a solution 4, and in this state, the substrate center sliding member 9 is moved in the direction of arrow A by a drive device (not shown), and the substrate setting section 11 is placed on the port stand 1.
0, as shown by the two-dot chain line in FIG. The liquid phase growth film is sequentially formed on the substrate 12 by moving.
このようにすることによって、基板１２の表面は高温に
曝されないので良好な表面状態で液相成長膜が形成され
結晶性が良好となる。By doing so, the surface of the substrate 12 is not exposed to high temperatures, so that a liquid phase growth film is formed in a good surface condition and has good crystallinity.
なお、本実施例では基板１２をＩｎＰについて説明した
が、ＩｎＰに限らすＧａＡｓその他であっても良い。In this embodiment, the substrate 12 is made of InP, but it is not limited to InP, but may be made of GaAs or other materials.
以上の説明によれば、液相成長温度条件に達するまで、
基板をポート台から分離し清浄なガス中に位置せしめ、
良好な表面状態で結晶膜が形成することができるので、
結晶性の向上に極めて有効である。According to the above explanation, until the liquid phase growth temperature conditions are reached,
Separate the board from the port stand and place it in clean gas.
Since a crystalline film can be formed with good surface conditions,
It is extremely effective in improving crystallinity.
【図面の簡単な説明】
第１図〜第３図は、本発明の位置実施例を説明する図で
、第１図は液相成長方法及び装置の側断面図、第２図は
液相成長方法及び装置の平面図。
第３図は第２図の拡大正面図、
第４図及び第５図は、従来の液相成長用ポートの構造を
説明する図で、第４図は側断面図、第５図は正面図であ
る。
図において、１，１０はポート台、２はスライダポート
、３は蓋、４は溶液、５は基板上７ト凹部、６は抵抗加
熱炉、７は石英管、８はスライダポート摺動部材、９は
基板セット部摺動部材、１１は基板セット部、１２は基
板、２１は溶液収容枠、１０１は凹部、をそれぞれ示す
。
、１；さ％”Ｆ４ｒ３１ｊｇｆｋ長尤Ｘ１ｙ４１−’ｔ
ｑイｌ’Ｊｔ’ｍＪｍ第１図
第２図
オｈ肩め鶴へ長方蹟及υ−メ１−払友正面ｍ（シｕｓ３
ｊｔＪａｆｓ：４ｔ２ＡＡｖｉｔＪ！１ｔｔｆｎｒＡｉ
ａ／Ｉ；ｊｉＸ８Ｂ４方３ｆ及す−Ｋｉｎ正１ｆｆｉ第
５図[BRIEF DESCRIPTION OF THE DRAWINGS] Figures 1 to 3 are diagrams illustrating an embodiment of the present invention, in which Figure 1 is a side sectional view of the liquid phase growth method and apparatus, and Figure 2 is a side sectional view of the liquid phase growth method and apparatus. FIG. 2 is a top view of the method and apparatus. Figure 3 is an enlarged front view of Figure 2, Figures 4 and 5 are diagrams explaining the structure of a conventional liquid phase growth port, Figure 4 is a side sectional view, and Figure 5 is a front view. It is. In the figure, 1 and 10 are port stands, 2 is a slider port, 3 is a lid, 4 is a solution, 5 is a recess on the substrate, 6 is a resistance heating furnace, 7 is a quartz tube, 8 is a slider port sliding member, Reference numeral 9 designates a sliding member of the substrate set portion, 11 represents a substrate set portion, 12 represents a substrate, 21 represents a solution storage frame, and 101 represents a recessed portion. , 1; %"F4r31jgfk Long Y41-'t
qIl'Jt'mJmFig. 1Fig. 2Oh
jtJafs:4t2AAvitJ! 1ttfnrAi
a/I; jiX8B4 side 3f and -Kin positive 1ffi Figure 5
Claims (2)
イドする複数に区割りされてなる溶液収容枠（２１）を
載置したポート台（１０）から、基板セット部（１１）
を分離せしめて前記抵抗加熱炉（６）から離して置き、
前記溶液収容枠（２１）の溶液（４）が液相成長条件に
なると、前記基板セット部（１１）を前記ポート台（１
０）に引き寄せ、所定時間経過後前記溶液収容枠（２１
）をスライドせしめて液相成長を行なうことを特徴とす
る液相成長方法。(1) From the port stand (10) on which the solution storage frame (21), which is divided into a plurality of sections and slides into the resistance heating furnace (6) via the quartz tube (7), is placed, the board setting part (11)
separated and placed away from the resistance heating furnace (6);
When the solution (4) in the solution storage frame (21) reaches the liquid phase growth conditions, the substrate setting section (11) is moved to the port stand (1).
0), and after a predetermined period of time, the solution storage frame (21
) is a liquid phase growth method characterized by performing liquid phase growth by sliding.
る石英管（７）と、該石英管（７）内に収容するポート
台（１０）と、該ポート台（１０）に載置する複数に区
割されたスライドする溶液収容枠（２１）と、前記ポー
ト台（１０）から分離したスライド自在な基板セット（
１１）で構成されてなることを特徴とする液相成長装置
。(2) A resistance heating furnace (6), a quartz tube (7) to be inserted into the resistance furnace (6), a port stand (10) accommodated in the quartz tube (7), and a port stand (10) to be inserted into the resistance furnace (6). ) and a slidable solution storage frame (21) separated from the port stand (10).
11) A liquid phase growth apparatus comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29300087A JPH01133994A (en) | 1987-11-18 | 1987-11-18 | Method and device for liquid-phase growth |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29300087A JPH01133994A (en) | 1987-11-18 | 1987-11-18 | Method and device for liquid-phase growth |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01133994A true JPH01133994A (en) | 1989-05-26 |
Family
ID=17789179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29300087A Pending JPH01133994A (en) | 1987-11-18 | 1987-11-18 | Method and device for liquid-phase growth |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01133994A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04149094A (en) * | 1990-10-11 | 1992-05-22 | Sharp Corp | Device for liquid phase epitaxy |
| JP2011249650A (en) * | 2010-05-28 | 2011-12-08 | Chube Univ | Liquid phase epitaxial growth method for gaas |
-
1987
- 1987-11-18 JP JP29300087A patent/JPH01133994A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04149094A (en) * | 1990-10-11 | 1992-05-22 | Sharp Corp | Device for liquid phase epitaxy |
| JP2011249650A (en) * | 2010-05-28 | 2011-12-08 | Chube Univ | Liquid phase epitaxial growth method for gaas |
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