JPH0629520A - 電界効果トランジスタ - Google Patents
電界効果トランジスタInfo
- Publication number
- JPH0629520A JPH0629520A JP4179429A JP17942992A JPH0629520A JP H0629520 A JPH0629520 A JP H0629520A JP 4179429 A JP4179429 A JP 4179429A JP 17942992 A JP17942992 A JP 17942992A JP H0629520 A JPH0629520 A JP H0629520A
- Authority
- JP
- Japan
- Prior art keywords
- effect transistor
- gate
- field effect
- gates
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
Landscapes
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4179429A JPH0629520A (ja) | 1992-06-12 | 1992-06-12 | 電界効果トランジスタ |
| KR1019930009886A KR940001458A (ko) | 1992-06-12 | 1993-06-02 | 전계효과 트랜지스터 |
| EP93109418A EP0577998B1 (en) | 1992-06-12 | 1993-06-11 | Field effect transistor |
| DE69317480T DE69317480T2 (de) | 1992-06-12 | 1993-06-11 | Feldeffekttransistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4179429A JPH0629520A (ja) | 1992-06-12 | 1992-06-12 | 電界効果トランジスタ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0629520A true JPH0629520A (ja) | 1994-02-04 |
Family
ID=16065708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4179429A Pending JPH0629520A (ja) | 1992-06-12 | 1992-06-12 | 電界効果トランジスタ |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0577998B1 (enExample) |
| JP (1) | JPH0629520A (enExample) |
| KR (1) | KR940001458A (enExample) |
| DE (1) | DE69317480T2 (enExample) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3355598A (en) * | 1964-11-25 | 1967-11-28 | Rca Corp | Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates |
| JPS5753151A (en) * | 1980-09-16 | 1982-03-30 | Nippon Telegr & Teleph Corp <Ntt> | And circuit |
| JPH0695570B2 (ja) * | 1985-02-07 | 1994-11-24 | 三菱電機株式会社 | 半導体集積回路装置 |
| US5005059A (en) * | 1989-05-01 | 1991-04-02 | Motorola, Inc. | Digital-to-analog converting field effect device and circuitry |
-
1992
- 1992-06-12 JP JP4179429A patent/JPH0629520A/ja active Pending
-
1993
- 1993-06-02 KR KR1019930009886A patent/KR940001458A/ko not_active Withdrawn
- 1993-06-11 DE DE69317480T patent/DE69317480T2/de not_active Expired - Fee Related
- 1993-06-11 EP EP93109418A patent/EP0577998B1/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR940001458A (ko) | 1994-01-11 |
| EP0577998B1 (en) | 1998-03-18 |
| DE69317480T2 (de) | 1998-07-09 |
| EP0577998A3 (enExample) | 1994-02-16 |
| DE69317480D1 (de) | 1998-04-23 |
| EP0577998A2 (en) | 1994-01-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8679918B2 (en) | Multiple-gate device with floating back gate | |
| US8344361B2 (en) | Semiconductor nanowire vertical device architecture | |
| JPH0629520A (ja) | 電界効果トランジスタ | |
| WO2005004203A3 (en) | System and method based on field-effect transistors for addressing nanometer-scale devices | |
| EP0330142A3 (en) | Multi-gate field-effect transistor | |
| EP4191655A3 (en) | Asymmetric gate structures and contacts for stacked transistors | |
| CN104538442B (zh) | 一种隧穿场效应晶体管及其制作方法 | |
| Mukaiyama et al. | Fabrication of gate-all-around MOSFET by silicon anisotropic etching technique | |
| WO2017004840A1 (zh) | 薄膜晶体管及其制造方法、阵列基板 | |
| Sen et al. | Deciphering phenomenal performance with gate-all-around strained heterostructure nanotube tunneling FET (TFET) for better drive currents and steep subthreshold slope | |
| JP2001210827A (ja) | 電界効果トランジスタ及びその製造方法 | |
| CN105659384B (zh) | 晶体管阵列布线 | |
| KR20000073155A (ko) | 실리콘 이중 산화막 구조 를 이용한 단전자 트랜지스터 및 그 제조 방법 | |
| CN107275408A (zh) | 薄膜晶体管及其制造方法、驱动电路和显示装置 | |
| KR20020084881A (ko) | 측면게이트를 이용한 실리콘 단전자 트랜지스터 제조방법 | |
| JPS6334975A (ja) | ゲ−ト誘導トンネルトランジスタ | |
| ATE357045T1 (de) | Matrixadressierbares array integrierter transistor-/speicherstrukturen | |
| Karutharaja et al. | A Comparative Review: Performance Parameters of Fin, Nanowire and Nanosheet Field Effect Transistors on 5nm Node | |
| JPS58192359A (ja) | 半導体装置 | |
| TW201505173A (zh) | 非對稱閘極的穿隧式電晶體 | |
| JPH06140437A (ja) | 電界効果型トランジスタ | |
| Zhou et al. | III-V Gate-wrap-around field-effect-transistors with high-k gate dielectrics | |
| Tang et al. | Simulation of electrical characteristics of surrounding-and omega-shaped-gate nanowire FinFETs | |
| JP2777924B2 (ja) | 量子効果装置 | |
| Reddy et al. | Design and Performance Analysis of Negative Capacitance Based Junctionless Nanowire FeFET for Memory Cell Applications |