JPH0621229A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To prevent a crack of an interlayer insulating film by devising a part for removing a surface protective film in an inner wiring having a fuse opening forming region to be cut by a laser light externally through a part in which one region of the film is removed. CONSTITUTION:A semiconductor device has a surface protective film formed of two layers of a lower layer film 6 and an upper layer film 7. The two layers 6, 7 of the film are removed in an electrode forming region A, and a surface of a metal wiring 5 to be connected to an external electrode is exposed with an outdoor atmosphere. On the other hand, only the layer 7 is removed from a fuse opening forming region B so that an interlayer insulating film 4 is not exposed with the outdoor atmosphere. In order to remove the layers 6, 7, the film 7 is first removed by a photolithography etching having a pattern of two openings on the regions A, B. Then, similar process is conducted only at one position on the region A to remove the film 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device structure and manufacturing method.

[0002]

2. Description of the Related Art The structure of a conventional semiconductor device is shown in FIG. In FIG. 2, the surface protection film of the semiconductor device has a two-layer structure.

In a semiconductor device having a surface protective film composed of a plurality of layers, an electrode forming region A and a fuse opening forming region B, which are portions for connecting the internal wiring to the outside,
The removal of the surface protection films 6 and 7 is simultaneously performed in one step, and all the layers of the surface protection films 6 and 7 are removed in the electrode formation region A and the fuse opening portion formation region B. Therefore, in the fuse opening portion formation region B, the interlayer insulating film 4 inside the semiconductor device is exposed to the outside air atmosphere. At this time, a small amount of the surface of the interlayer insulating film 4 is removed, and the interlayer insulating film 4 is removed.
The scraped portion X of In FIG. 2, reference numeral 1 is a semiconductor device substrate, reference numeral 2 is an interlayer insulating film, reference numeral 3 is a semiconductor device internal wiring, and 5 is a metal wiring.

[0004]

In the conventional semiconductor device having such a structure, in the fuse opening forming region B, the interlayer insulating film 4 inside the semiconductor device is directly removed by the step of removing the surface protective films 6 and 7. Exposure to the atmosphere,
Further, the film etching in the above removing step reaches a part of the interlayer insulating film 4 and removes the part to cause the scraping X of the interlayer insulating film 4 to increase the exposed area of the interlayer insulating film 4 to the atmosphere. Since the metal wiring 5 is increased, the frequency of corrosion of the metal wiring 5 due to the chemical reaction between the metal wiring 5 and the outside air atmosphere that has penetrated the interlayer insulating film 4 is increased, and there is a problem that the moisture resistance of the metal wiring 5 is deteriorated. It was In addition, the interlayer insulating film 4
When a material having a high hygroscopic property such as BPSG and containing a large amount of impurities that promotes a chemical reaction between the outside air atmosphere and the metal wiring 5 is used as the material of, the frequency of corrosion of the metal wiring 5 is further increased. , The problem gets worse. Therefore, the present invention solves such a problem, and an object thereof is to remove at least one lowermost layer film 6 of the surface protective film in the fuse opening forming region B,
It is an object of the present invention to provide a structure of a surface protective film of a semiconductor device and a method for manufacturing the same for improving the moisture resistance of the semiconductor device.

[0005]

The semiconductor device of the present invention comprises:
The surface protective film consists of two or more layers, and the entire protective film is removed in the electrode formation area, and the connection surface of the metal wiring to the external electrode is exposed to the outside air atmosphere. Is characterized in that at least the lowermost layer of the surface protective film is not removed and a layer is formed, and the interlayer insulating film has a structure not exposed to the outside air atmosphere.

According to the method of manufacturing a semiconductor device of the present invention, first, two or more surface protection films of a semiconductor device are laminated, and at least one lowermost layer of the surface protection film is left, and the upper film is used as an electrode formation region. The method is characterized by including a step of removing the lower layer film which is not removed in the above two areas of the fuse opening portion forming area and only one area of the electrode forming area.

Alternatively, several layers constituting the lower part of the surface protective film of the semiconductor device are laminated, the lower layer is removed only in one region of the electrode forming region, and several layers constituting the upper part of the surface protective film are laminated. The method further comprises the step of removing the upper surface protective film formed above in two regions of the electrode formation region and the fuse opening portion formation region.

[0008]

According to the present invention, since the lower layer film of the surface protective film is not removed in the fuse opening portion forming region but is formed as a single layer, the interlayer insulating film inside the semiconductor device is not exposed to the outside air atmosphere. Further, the interlayer insulating film in the structure of the semiconductor device of the above-mentioned conventional technique is not scraped, and it has an effect of reducing the frequency of occurrence of corrosion of metal wiring due to moisture in the outside air atmosphere that has penetrated the interlayer insulating film.

[0009]

Embodiments of the present invention will be specifically described below with reference to the drawings.

(Embodiment 1) FIG. 1 is a sectional view of a surface protective film of a semiconductor device showing an embodiment of the present invention. In FIG. 1, the surface protective film of the semiconductor device is composed of two layers, a lower layer film 6 and an upper layer film 7. The reference numerals shown in the figure correspond to those in FIG.

In the electrode forming region A, the lower layer film 1 and the upper layer film 2 of the surface protective film are removed, and the surface of the metal wiring 5 connected to the external electrode is exposed to the outside air atmosphere. In the opening portion forming region B, only the upper layer film 7 is removed, the lower layer film 6 is not removed and a protective film is formed, and the interlayer insulating film 4 has a structure not exposed to the outside air atmosphere.

Next, an embodiment of the method for manufacturing a semiconductor device of the present invention will be described.

(A) An interlayer insulating film 2 is formed on a substrate of a semiconductor device to a thickness of 100 nm by deposition of silicon oxide by a chemical vapor deposition method.

(B) The internal wiring 3 of the semiconductor device is formed by laminating a polysilicon film by 100 nm deposition, photolithography, and etching.

(C) Interlayer insulating film 4 is formed on top of this by phosphorus 9.
mol and BPS containing boroso 9 mol as impurities
800 by G chemical vapor deposition
It is formed with a film thickness of nm.

(E) The metal wiring 5 is formed on the upper surface of the interlayer insulating film 7 by 500 nm sputtering of aluminum, photolithography, and etching.

(F) The lower layer film 6 of the surface protection film of the semiconductor device is formed to have a film thickness of 100 by the chemical vapor deposition method of silicon oxide.
nm deposition.

(G) The upper layer film 7 of the surface protective film of the semiconductor device is formed to a film thickness of 1000 n by the chemical vapor deposition method of silicon nitride.
It is formed by the deposition of m.

(H) The upper layer film 7 of the surface protective film of the semiconductor device is removed by photolithography and etching having a pattern of openings on the electrode forming area A and on the fuse opening forming area B. .

(I) The underlayer film 6 of the surface protection film of the semiconductor device is removed by photolithography or etching having a pattern of openings at only one place on the electrode formation region A to remove the surface protection film of the semiconductor device of the present invention. Constitutes the structure of.

(Embodiment 2) An embodiment of the method for manufacturing a semiconductor device of the present invention will be described.

After the steps (a) to (e) in the first embodiment, the structure of the surface protective film of the semiconductor device of the present invention is constituted by the following four steps different from the first embodiment.

(J) The lower layer film 6 of the surface protection film of the semiconductor device is formed to have a film thickness of 100 by the chemical vapor deposition method of silicon oxide.
nm deposition.

(K) The lower layer film 6 of the surface protective film of the semiconductor device is removed by photolithography and etching having a pattern of openings at only one place on the electrode forming region A.

(L) The upper film 7 of the surface protection film of the semiconductor device is formed to have a film thickness of 1000 n by the chemical vapor deposition method of silicon nitride.
It is formed by the deposition of m.

(M) The upper layer film 7 of the surface protection film of the semiconductor device is removed by photolithography and etching having a pattern of openings on the electrode forming area A and on the fuse opening forming area B. The structure of the surface protective film of the semiconductor device of the present invention is constituted.

[0027]

As described above, according to the semiconductor device of the present invention, the lower layer film 6 of the surface protective film is not removed in the fuse opening forming region B, and the interlayer insulating film 4 inside the semiconductor device is not removed. The effect of reducing the frequency of occurrence of corrosion of the metal wiring 5 from the outside atmosphere by not being exposed to the outside atmosphere and causing no abrasion of the interlayer insulating film 4 as seen in the conventional semiconductor device. There is.

[Brief description of drawings]

FIG. 1 is a sectional view showing an example of a surface protective film of a semiconductor device of the present invention.

FIG. 2 is a sectional view showing a structure of a surface protective film of a conventional semiconductor device.

[Explanation of symbols]

 1 Semiconductor Device Substrate 2 Interlayer Insulation Film 3 Semiconductor Device Internal Wiring 4 Interlayer Insulation Film 5 Metal Wiring 6 Lower Layer Film of Surface Protective Film of Semiconductor Device 7 Upper Layer Film of Surface Protective Film of Semiconductor Device A Electrode Forming Area B Fuse Opening Formation Area X The scraped portion of the interlayer insulating film 4

Claims (3)

[Claims] 1. The surface protective film is composed of a plurality of layers of two or more layers, and the internal wiring can be cut by a laser beam from the outside through a portion where one region of the surface protective film is removed (formation of a fuse opening portion). Region), the fuse opening formation region has at least one lowermost layer of the surface protection film, and the surface protection film is formed in the electrode formation region for connecting the internal wiring of the semiconductor device to the outside. A semiconductor device having a structure in which all the layers are removed. 2. A step of laminating two or more layers of a surface protective film of a semiconductor device, and an upper film of an electrode forming region and a fuse opening forming region leaving at least one lowermost layer of the surface protective film. 2 step of removing the lower layer film which is not removed in the above step in the electrode forming area
A method of manufacturing a semiconductor device, comprising the step of removing only in a region. 3. A step of laminating several layers constituting a lower portion of a surface protective film of a semiconductor device, a step of removing the lower layer only in one region of an electrode forming region, and a number of constituting the upper portion of the surface protective film. A method of manufacturing a semiconductor device, comprising: a step of stacking layers; and a step of removing the upper surface protective film formed in the step in two regions of an electrode forming region and a fuse opening forming region.