JPH0613264Y2 - 気相エピタキシアル成長装置 - Google Patents

気相エピタキシアル成長装置

Info

Publication number
JPH0613264Y2
JPH0613264Y2 JP567688U JP567688U JPH0613264Y2 JP H0613264 Y2 JPH0613264 Y2 JP H0613264Y2 JP 567688 U JP567688 U JP 567688U JP 567688 U JP567688 U JP 567688U JP H0613264 Y2 JPH0613264 Y2 JP H0613264Y2
Authority
JP
Japan
Prior art keywords
holding jig
substrate holding
growth
vapor phase
phase epitaxial
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP567688U
Other languages
English (en)
Japanese (ja)
Other versions
JPH01110268U (es
Inventor
佳晴 東川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP567688U priority Critical patent/JPH0613264Y2/ja
Publication of JPH01110268U publication Critical patent/JPH01110268U/ja
Application granted granted Critical
Publication of JPH0613264Y2 publication Critical patent/JPH0613264Y2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP567688U 1988-01-20 1988-01-20 気相エピタキシアル成長装置 Expired - Lifetime JPH0613264Y2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP567688U JPH0613264Y2 (ja) 1988-01-20 1988-01-20 気相エピタキシアル成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP567688U JPH0613264Y2 (ja) 1988-01-20 1988-01-20 気相エピタキシアル成長装置

Publications (2)

Publication Number Publication Date
JPH01110268U JPH01110268U (es) 1989-07-25
JPH0613264Y2 true JPH0613264Y2 (ja) 1994-04-06

Family

ID=31209260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP567688U Expired - Lifetime JPH0613264Y2 (ja) 1988-01-20 1988-01-20 気相エピタキシアル成長装置

Country Status (1)

Country Link
JP (1) JPH0613264Y2 (es)

Also Published As

Publication number Publication date
JPH01110268U (es) 1989-07-25

Similar Documents

Publication Publication Date Title
TWI389235B (zh) The conveyance device of the object to be processed
KR880001438B1 (ko) 반도체 기상성장장치
US7905700B2 (en) Vertical-type heat processing apparatus and method of controlling transfer mechanism in vertical-type heat processing apparatus
JPH06124899A (ja) 半導体製造装置
KR101312789B1 (ko) 웨이퍼의 위치 결정 방법
KR950004375A (ko) 기판 포토리소그라피 시스템에서의 실리콘 기판을 소성하고 냉각하기 위한 장치 및 그 방법
JP2007083232A (ja) コンポーネントを製造するための方法および装置
EP1138060A1 (en) Gas driven rotating susceptor for rapid thermal processing (rtp) system
CN107723683A (zh) 化学气相沉积镀膜设备
JP2001500320A (ja) バッチローダアーム
JPH0613264Y2 (ja) 気相エピタキシアル成長装置
US6546307B1 (en) Method and apparatus for detecting proper orientation of a semiconductor wafer in a wafer transfer system
JP2762022B2 (ja) Cvd装置に使用する回転機構、およびこの機構を利用して被処理体の温度を制御する方法
JPH04226802A (ja) 旋盤/研削装置
JPH05304196A (ja) ウエハ搬送装置
CN217847887U (zh) 一种晶圆寻边附加装置和光刻机
JP2005044938A (ja) アライナ付き基板移載装置
JPH09213770A (ja) 半導体ウエハ処理装置および半導体ウエハ処理装置におけるアライメント方法
JP3631921B2 (ja) 非接触式温度計の較正方法
CN103531495B (zh) 半导体检测装置、半导体检测系统及检测衬底温度的方法
EP0372884A3 (en) Processing semi-conductor wafers and other substrates
JP2648751B2 (ja) 熱処理方法及び熱処理装置
JP2001015573A (ja) 基板処理装置
JP3149027B2 (ja) 熱処理用ボートの位置決め装置
JPS6040605Y2 (ja) 気相成長装置のノズル高さ調整装置