JPH06101484B2 - Charge transfer device - Google Patents
Charge transfer deviceInfo
- Publication number
- JPH06101484B2 JPH06101484B2 JP60002894A JP289485A JPH06101484B2 JP H06101484 B2 JPH06101484 B2 JP H06101484B2 JP 60002894 A JP60002894 A JP 60002894A JP 289485 A JP289485 A JP 289485A JP H06101484 B2 JPH06101484 B2 JP H06101484B2
- Authority
- JP
- Japan
- Prior art keywords
- output
- transfer
- gate electrode
- section
- transfer device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Ceramic Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Scanning Arrangements (AREA)
Description
【発明の詳細な説明】 産業上の利用分野 本発明は、特に固体撮像装置に寄与する電荷転送装置に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charge transfer device that contributes to a solid-state imaging device.
従来の技術 近年、固体撮像装置の開発が進み、性能の向上がはから
れてきている。特にS/N比を向上させるため、浮遊拡散
層の容量を小さくし、出力の電位変化を大きくさせる構
造が一般に用いられている。2. Description of the Related Art In recent years, development of solid-state imaging devices has progressed, and performance has been improved. In particular, in order to improve the S / N ratio, a structure in which the capacitance of the floating diffusion layer is reduced and the potential change of the output is increased is generally used.
以下、図面を参照しながら、上述したような従来の電荷
転送装置について説明する。第３図は従来の電荷転送装
置の要部概略図を示すものである。（１−１）、（１−
２）、（１−３）は転送ゲート電極、２は出力ゲート電
極、３は浮遊拡散層、４はリセットゲート電極、５は出
力端子である。第４図は第３図におけるＡ−Ａ′線に沿
った電位分布図を示す。Hereinafter, the conventional charge transfer device as described above will be described with reference to the drawings. FIG. 3 is a schematic view of a main part of a conventional charge transfer device. (1-1), (1-
2) and (1-3) are transfer gate electrodes, 2 is an output gate electrode, 3 is a floating diffusion layer, 4 is a reset gate electrode, and 5 is an output terminal. FIG. 4 shows a potential distribution diagram along the line AA ′ in FIG.
このように構成された従来の電荷転送装置において、以
下その動作を説明する。信号電荷は、転送ゲート電極
（１−１）下より、出力ゲート電極２下をこえて浮遊拡
散層３に転送され、電圧に変換される。その際、S/N比
を改善するため、および出力の電位変化を大きくするた
めに浮遊拡散層３の容量を小さくしている。このため浮
遊拡散層３の幅を転送ゲート電極下の転送拡散よりも狭
くしている。The operation of the conventional charge transfer device thus configured will be described below. The signal charge is transferred from below the transfer gate electrode (1-1) to below the output gate electrode 2 to the floating diffusion layer 3 and converted into a voltage. At that time, the capacitance of the floating diffusion layer 3 is reduced in order to improve the S / N ratio and to increase the potential change of the output. Therefore, the width of the floating diffusion layer 3 is made narrower than that of the transfer diffusion under the transfer gate electrode.
発明が解決しようとする問題点 しかしながら、上記の様な構成では、出力ゲート部のチ
ャンネル幅が転送部Ａ′側に比べて出力部Ａ側が非常に
狭くなっているので、狭チャンネル効果により、第４図
に示したようにＡ側の電位が急激に低くなるという欠点
を有していた。このため、電荷の転送効率が著しく低下
するという大きな問題をかかえていた。However, in the above-mentioned configuration, the channel width of the output gate section is much narrower on the output section A side than on the transfer section A ′ side. As shown in FIG. 4, there was a drawback that the potential on the A side suddenly dropped. Therefore, there is a big problem that the charge transfer efficiency is significantly reduced.
本発明は、上記欠点に鑑み、出力ゲート部における狭チ
ャンネル効果を防ぎ、高い転送効率を実現できる電荷転
送装置を提供するものである。In view of the above drawbacks, the present invention provides a charge transfer device capable of preventing a narrow channel effect in an output gate section and realizing high transfer efficiency.
問題点を解決するための手段 上記問題点を解決するために本発明の電荷転送装置は、
信号電荷を転送する転送部と前記転送部より転送された
信号電荷を読みだす出力部との間の出力ゲート電極下部
に、前記転送部から前記出力部に向かって狭くなる浮遊
拡散層が形成され、前記出力ゲート電極が前記出力部よ
り前記転送部側に向かって切れこみを有するものであ
る。Means for Solving the Problems In order to solve the above problems, the charge transfer device of the present invention is
A floating diffusion layer that narrows from the transfer section toward the output section is formed below the output gate electrode between the transfer section that transfers the signal charge and the output section that reads out the signal charge transferred from the transfer section. The output gate electrode has a notch toward the transfer section side from the output section.
作用 この構成によって、従来では出力ゲート部の出力部側が
転送部側に比べてチャンネル幅が非常に狭くなっている
ことにより発生していた狭チャンネル効果を防ぎ、高い
転送効率を実現させることができるものである。Operation With this configuration, it is possible to prevent the narrow channel effect that has been conventionally caused by the channel width of the output section of the output gate section being extremely narrower than that of the transfer section side, and realize high transfer efficiency. It is a thing.
実施例 以下、本発明の一実施例について、図面を参照しながら
説明する。Embodiment One embodiment of the present invention will be described below with reference to the drawings.
第１図は、本発明の一実施例における電荷転送装置の概
略図を示す。第１図において、（６−１）（６−２）
（６−３）はCCDの転送ゲート電極、７は出力ゲート電
極、８は浮遊拡散層、９はリセットゲート電極、10は出
力端子である。出力ゲート電極７は、第４図の電圧分布
図において、電位が低くなり始める点ａまで出力ゲート
電極７の出力部側に出力部より転送部側に向かって切れ
こみを入れてある。FIG. 1 is a schematic diagram of a charge transfer device according to an embodiment of the present invention. In FIG. 1, (6-1) (6-2)
(6-3) is a CCD transfer gate electrode, 7 is an output gate electrode, 8 is a floating diffusion layer, 9 is a reset gate electrode, and 10 is an output terminal. In the voltage distribution diagram of FIG. 4, the output gate electrode 7 has a notch on the output side of the output gate electrode 7 toward the transfer side from the output side up to a point a where the potential starts to decrease.
第２図は転送ゲート電極（６−１）に転送パルスφをか
けた場合の電位分布図を第１図のＢ−Ｂ′線に沿って示
したものである。第２図において、Ｑは信号電荷であ
る。FIG. 2 shows a potential distribution diagram when a transfer pulse φ is applied to the transfer gate electrode (6-1) along the line BB ′ in FIG. 1. In FIG. 2, Q is a signal charge.
このようにして構成された電荷転送装置についてその動
作を説明する。まず、ｔ＝t1のとき、転送パルスφはハ
イレベルになっており、転送ゲート電極（６−１）下に
ポテンシャルの井戸が形成され、信号電荷Ｑが蓄積され
る。ｔ＝t2のとき、転送パルスφはローレベルとなり、
井戸が浅くなり、信号電荷Ｑは出力ゲート電極７下のゲ
ート部をのりこえる。このときの電位変化が出力端子10
から出力される。The operation of the charge transfer device thus configured will be described. First, when t = t 1 , the transfer pulse φ is at a high level, a potential well is formed under the transfer gate electrode (6-1), and the signal charge Q is accumulated. When t = t 2 , the transfer pulse φ becomes low level,
The well becomes shallow, and the signal charge Q exceeds the gate portion below the output gate electrode 7. The potential change at this time is output terminal 10
Is output from.
このように本実施例によれば、出力ゲート電極７の出力
部側より切れこみを入れることによって、出力ゲート部
の電位は第２図に示されるようにフラットになっている
ため、電荷が簡単に出力ゲートをのりこえることがで
き、高い転送効率が得られる。As described above, according to the present embodiment, the electric potential of the output gate portion is flat as shown in FIG. 2 by making a notch from the output portion side of the output gate electrode 7, so that the electric charge is simple. The output gate can be exceeded, and high transfer efficiency can be obtained.
発明の効果 以上のように本発明は、電荷転送装置の出力ゲート電極
の出力部側より転送部側に向かって切れこみを入れるこ
とにより、狭チャンネル効果を防ぐことが可能となり、
高い電荷の転送効率が得られ、その実用的効果は大なる
ものがある。EFFECTS OF THE INVENTION As described above, according to the present invention, it is possible to prevent the narrow channel effect by making a notch from the output side of the output gate electrode of the charge transfer device toward the transfer side.
High charge transfer efficiency can be obtained, and its practical effect is great.
第１図は本発明の一実施例における電荷転送装置の概略
図、第２図はその電位分布図、第３図は従来の電荷転送
装置の概略図、第４図は従来の電荷転送装置における電
位分布図である。 （６−１）（６−２）（６−３）…転送ゲート電極、７
……出力ゲート電極、８……浮遊拡散層、９……リセッ
トゲート電極、10……出力端子、Ｑ……信号電荷。FIG. 1 is a schematic diagram of a charge transfer device according to an embodiment of the present invention, FIG. 2 is a potential distribution diagram thereof, FIG. 3 is a schematic diagram of a conventional charge transfer device, and FIG. 4 is a conventional charge transfer device. It is a potential distribution map. (6-1) (6-2) (6-3) ... Transfer gate electrode, 7
...... Output gate electrode, 8 ・ ・ ・ Floating diffusion layer, 9 ・ ・ ・ Reset gate electrode, 10 ・ ・ ・ Output terminal, Q ・ ・ ・ Signal charge.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 堀居 賢樹 大阪府門真市大字門真1006番地 松下電子 工業株式会社内 (56)参考文献 特開 昭53−84486（ＪＰ，Ａ) 特開 昭58−212176（ＪＰ，Ａ) 特開 昭59−44870（ＪＰ，Ａ) 特開 昭58−210674（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kenki Horii 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electronics Industrial Co., Ltd. (56) Reference JP-A-53-84486 (JP, A) JP-A-58- 212176 (JP, A) JP 59-44870 (JP, A) JP 58-210674 (JP, A)
Claims (1)
り転送された信号電荷を読みだす出力部との間の出力ゲ
ート電極下部に、前記転送部から前記出力部に向かって
狭くなる浮遊拡散層が形成され、前記出力ゲート電極が
前記出力部より前記転送部側に向かって切れこみを有す
る電荷転送装置。1. A floating structure that narrows from the transfer section toward the output section, below the output gate electrode between the transfer section that transfers the signal charge and the output section that reads the signal charge transferred from the transfer section. A charge transfer device in which a diffusion layer is formed, and the output gate electrode has a notch toward the transfer unit side from the output unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60002894A JPH06101484B2 (en) | 1985-01-10 | 1985-01-10 | Charge transfer device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60002894A JPH06101484B2 (en) | 1985-01-10 | 1985-01-10 | Charge transfer device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61161756A JPS61161756A (en) | 1986-07-22 |
| JPH06101484B2 true JPH06101484B2 (en) | 1994-12-12 |
Family
ID=11542063
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60002894A Expired - Lifetime JPH06101484B2 (en) | 1985-01-10 | 1985-01-10 | Charge transfer device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06101484B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2699726B1 (en) * | 1992-12-22 | 1995-01-27 | Thomson Csf Semiconducteurs | Load transfer shift register with improved reading device. |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5842630B2 (en) * | 1976-12-29 | 1983-09-21 | 松下電器産業株式会社 | charge coupled device |
| JPS58212176A (en) * | 1982-06-02 | 1983-12-09 | Nec Corp | Charge transfer device |
| JPS5944870A (en) * | 1982-09-06 | 1984-03-13 | Nec Corp | Charge transfer device |
-
1985
- 1985-01-10 JP JP60002894A patent/JPH06101484B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61161756A (en) | 1986-07-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |