JPS5944870A - Charge transfer device - Google Patents

Abstract

PURPOSE:To improve transfer efficiency by facilitating the shunt, confluence and rotation of a transfer line by a method wherein the length parallel with the charge exhaust side of electrodes arranged in a semiconductor is, in a part, made larger than the length along the direction vertical to the exhaust side. CONSTITUTION:The electrodes are arranged on one main surface of the semiconductor substrate via an insulation layer. The shape of the electrode consists of a hexagon whereto an equilateral triangle ABC is cut by segments A'A'', B'B'', C'C'' at equal distances from each vertex of an equilateral triangle ABC. The charge transfer diretion Y becomes the direction vertical to the exhaust side A''C'' wherefrom the charges are exhausted to the adjacent potential well. Therefore, the electrode length Wi parallel with the exhaust side A''C'' is larger than the length (a) along the transfer direction Y, in the range from the segment B'B'' which is (a) long to the segment A'C' which is (b) long. As the result, a new acceleration voltage along the transfer direction is added beside a fringing electric field, and accordingly the transfer efficiency is improved.

Description

[Detailed description of the invention] The present invention relates to a charge transfer device.

Charge transfer devices (OTDs), such as charge-coupled devices (OODs) and packet brigade devices (BBDs), can store and transfer signal charges, making them ideal for many important devices such as memories, imagers, and delay lines (applications). One of the characteristics of OTD that is particularly important for these applications is charge transfer efficiency.In recent applications, this requires multi-gate transfer of hundreds of stages. Furthermore, in order to actually form these multi-y elements on one chip, it is impossible to configure them with only one transfer path in which the elements are arranged in a line, and it is necessary to It must be constructed and represented as a collection of such transfer paths.

Therefore, the transfer path must be divided, merged, and rotated without reducing charge transfer efficiency or transfer speed.

Therefore, there is currently a strong desire to realize O'['D, which improves the charge transfer efficiency and allows easy branching, merging, and rotation of the charge transfer path.

FIG. 1(a) is a plan view showing the electrode portion of a conventional three-phase 00D, and also shows the driving clock pulse. Same figure (
b) is its AA' cross-sectional view, and the same figure (c) shows the potential of electrode 3 (3) when a clock pulse is applied.
-1, 3-2, 3-3, . . . ) are arranged, and clock pulses φ8 . φ2. φ, is applied. Reference numeral 4 denotes a transfer area, in which a KP+ area is provided to prevent floating channels. (not shown). Note that Y indicates the transfer direction.

Now, as a clock pulse, 1φ11〈1φ21〈1φ
When a pulse voltage having a relationship of 31 is applied, the depth 1φ1 of the potential well formed is as shown in curve 5 shown in FIG. l) Charge transfer will occur in the Y direction. Ideally, the shape of the potential well shown in curve 5 is a step shape divided by each electrode boundary.
Actually, the transfer direction (
A fringing electric field (fringin
As a result of forming g field )Iiy as shown in the figure, an accelerating electric field is added to the transfer direction.

Incidentally, in addition to this fringing electric field, charge transfer in COD is also due to thermal diffusion and self-induced electric fields, but as the clock pulse frequency increases, the fringing electric field above the culm comes to dominate the transfer efficiency. It has been known. However, according to the prior art, FIG.
As shown in a), the shape of the electrode 3 is a rectangular shape. As long as it is used, it is extremely difficult to improve transfer efficiency.
There is a problem in that it cannot meet the current strong demand for improvement in transfer efficiency.

The inventors (r) first solve this problem by making the structure of the electrode an appropriate shape, and by adding a new electric field for transferring charges, the transfer efficiency can be improved. We proposed an improved O'l'D.

(Japanese Patent Application No. 57-95506) Figure 2 (a) shows an example of the proposed CTD.
This is a plan view of the main part showing the electrode part of 0D, and also shows the driving clock pulse. The difference from the conventional example shown in Fig. 1 is that the electrodes 11 (11-1, 11-2, 11-3,...)
The shape is a so-called chevrot pattern. Note that 12rj: i sending area.

FIG. 2(b) shows the depth 1φ1 of the potential well in the AA' plane and the BI3' plane perpendicular to the transfer direction Y of the electrode 11-2 in FIG. 2(a).

13 corresponds to the AA' side, and 14 corresponds to the BB side.

In other words, since the electrode 11-2 has a triangular shape from the fastest end to the BE' plane in the transfer direction Y, the '
lit;i Wi becomes larger along the transfer direction. In this case, the fringing electric field By (Fig. 1(c)
) are formed parallel to the translation direction Y for each portion of the electrode 11-2. Therefore, a straight line with a constant bodential slope determined by the electric field Ey starts along the outer edges (two sides other than the base) of the triangle, and gradually moves toward the transfer direction Y as it moves outward from the center. They will be lined up in a staggered manner.

As a result, the depth 1φ1 of the potential well in the plane perpendicular to the transfer direction Y is given as a composite of the fringing electric fields formed in each part, and the depth 1φ1 of the potential well becomes smaller as it moves away from the center. Therefore, it acts as an accelerating electric field as shown in FIG. 2(b). Therefore, according to the electrode structure of this example, in addition to the conventional fringing electric field, a new accelerating electric field based on the Osaka structure is added, so that the transfer efficiency is greatly improved. Furthermore, as is clear from Fig. 2(b), the depth 1φ1 of the potential well is larger at the center, in other words, the potential well is deeper, and an electric field is generated from the sides of the electrode toward the center. , the charge will be transferred in a line parallel to the transfer direction Y and directed toward the center of the lightning pole.

This means that the gate length α9 of the electrode is effectively shortened, and the transfer efficiency is further improved.

In other words, in the OTD previously proposed by the present inventors, the length in the direction perpendicular to the charge transfer direction is partially larger along the transfer direction, and the two sides facing the transfer direction are It has an electrode that is concave in the direction.

By the way, according to this proposed electrode shape, the effect is fully demonstrated when the charge transfer direction is one direction and it forms a single transfer path that continues in every building.
If it is necessary to divide, merge, or rotate the transfer path,
Due to its shape, it is not necessarily easy to do this without impairing the original effect.

Note that branching, merging, and rotation of the transfer path are also difficult problems even in the conventional example shown in Figure 1 (a), and various measures have been taken, such as using electrodes with unusual shapes. However, it cannot be said that the problem has necessarily been resolved.

Main Building 1. The purpose of the second invention is to provide an OTD in which the transfer path can be easily separated, merged, and rotated by making the electrode shape more appropriate, and the charge transfer efficiency is improved. be.

The OTD of the invention of Main Building 1 includes a plurality of electrodes arranged on one main surface of a semiconductor substrate with an insulating layer interposed therebetween, and the length of the electrodes parallel to the charge sweeping side of the electrodes is small. In both cases, a portion of the electrode has a shape that becomes larger along the direction perpendicular to the charge sweep side of the electrode.

The OTD of the invention of Main Building 2 includes a plurality of electrodes arranged on one main surface of a semiconductor substrate with an insulating layer interposed therebetween, and the length of the electrodes parallel to the charge sweep side of the electrodes is small. a first electrode having a shape that becomes larger along a direction perpendicular to a charge sweeping side of the electrode; and a charge injection path and a charge sweeping side of the first electrode. and a second electrode formed adjacent to the electrode.

The present invention will be described in detail below with reference to the drawings.

FIG. 3(a) shows the three-phase 00 of the first embodiment of the invention in the main building 1.
FIG. 3 is a schematic plan view showing an electrode portion of FIG. In the figure, for ease of display, the minute gap between each electrode for separation into two is omitted, and adjacent electrodes are drawn in contact with each other. Also, clock pulse φ1. φ2. φ is indicated by being written inside each application electrode, and at the same time, the direction of charge transfer is indicated by an arrow. (The same applies to the following figures) Electrode 12 (1
2-1°12-2. ) transfers charges in the Y′ force direction overall. (hereinafter referred to as the overall transfer direction) 3rd
Figure (b) shows one of the electrodes shown in figure (a). In other words, the shape of this electrode is an equilateral triangle ABO
A line segment A'8'' that is equidistant from each vertex of.

It consists of a hexagon A'B'B"C!'O"A" made by cutting the equilateral triangle ABC with B'B", C'C". Therefore, each interior angle is 120° and 3 squares It has axial rotational symmetry.Charge transfer direction y+/i, sweep edge A″0″ where the charge is swept to the adjacent potential well
The direction is perpendicular to . Therefore, the length Wi of the electrode parallel to the submitted side A"0" is from the line segment B'B" (length a) to the line segment A'
Up to o' (length b), Wl becomes smaller along the transfer direction only for a short period a along the transfer direction Y (direction perpendicular to the charge sweep side).

As is clear from the above description, the shape of the electrode in this embodiment is essentially the same as the shape of the electrode previously proposed by the inventors, which was already explained in FIGS. 2(a) and 2(b). be.

That is, the electrode flap Wl has a longer lifespan in a portion than along the charge transfer direction t. Therefore, in addition to the conventional fringing electric field as previously described, a new acceleration chamber field along the transfer direction is added and the gastric field is concentrated in the central part of the electrode relative to the transfer direction. Therefore, the width W of this electrode from the line segment A/O/ to A'10'', the influence of the deceleration world VX due to the width Wi becoming smaller in the part where ri is smaller, and the interval between them being minute. According to the electrode shape of the embodiment, which is viewed from the side, the additional accelerating electric field increases the transfer efficiency by +11):1.

Furthermore, since the electrode shape of this embodiment has three-coaxial rotational symmetry as described above, it has the feature that it is very easy to perform branching, merging, and coaxial flow in the transfer direction, which was difficult in the past. There is. This will be explained in detail below.

FIG. 4 is a schematic plan view showing the electrode portion of the three-phase 00D of the second embodiment of the invention in the main building 1. This embodiment shows branching of the transfer path. A transfer path Y consisting of electrodes 13-1 and 13-2.

However, electrode 13-3.1374,135. ... and electrodes 13-3', 13-4', 13-5', -P, and two transfer paths Y, Y, are divided. That is, the transfer path can be easily divided by simply combining one type of electrode with a shape that can improve the transfer efficiency.

FIG. 5 is a schematic plan view showing the three-phase 00D electrode portion of the third embodiment of the invention in the main building 1. This embodiment shows the merging of transfer paths. The two transfer paths YIY2 of the electrode 14-1, 14-2 and the electrodes 14-1' and 14-2' are the electrode 14-3.

14-4. ◇This merging can be easily done in the same way as the above-mentioned case of branching. FIG. 7 is a schematic plan view showing the three-phase 00D electrode portion of the fourth to ninth embodiments. These embodiments are examples of rotation of the transfer path by 30°.
, 60°, 90°, 120°, and 150C:180°.

In FIG. 6 (fourth embodiment), electrodes 15-1°15-2
．． With respect to the overall transfer direction Y' consisting of 15-3.15-4, electrodes 15-5.15-6°15-7. The overall transfer direction Y n consisting of... has an inclination of 30°.

In FIG. 7 (fifth embodiment), electrodes 16-1, 16-2
．． With respect to the overall transfer direction y/ consisting of 16-3.16-4, the electrodes 16-5.16-6°16-7.16-8.
The overall transfer direction Y" consisting of . . . has an inclination of 600.

In FIG. 8 (sixth embodiment), electrode 1.7-1.

Comprehensive transfer path y consisting of 17-2.17-4.17-5
/ for electrode 17 5.17-6°17-7.17
-8. The overall transfer path Y'' consisting of ... has an inclination of 90°.

In FIG. 9 (seventh implementation column), electric F#, 18'
+18-2.18-3.18-4 for the overall transfer path Y', electrodes 18-5, i, 3-6.

18 7, 18 8. ``'Karanal h combined transfer J
Y' has an inclination of 120''.

In FIG. 10 (eighth embodiment), electric 1 (1", 19.
1.

19-2.19-3.Comprehensive transfer path Y departing from 19-4
′, electrode 19-5.1′! -6°11-7.・
...The total transfer path Y'' has an inclination of 1.50°.

In FIG. 11 (ninth embodiment), 1. pole 20-1°20
-2, 203, 20-4, 20-5 with respect to the overall transfer direction Y', electrode 20-8.

20-9.2O-1(), 20-11., 20-11., .

In the fourth to ninth embodiments 1, as in the previous embodiments, the transfer efficiency is improved by 1 degree. , 900.12
Since the overall transfer direction can be easily rotated such as 00°, 150°, and 180°, when actually forming an OOD on a semiconductor chip, it is possible to take an appropriate electrode distribution according to the circuit. This greatly contributes to the effective use of chip area.

FIG. 12 shows the three-phase 00D of the tenth embodiment of the invention in bookcase 1.
FIG. This embodiment is different from the first to ninth embodiments described above, and the electrode 21 (2)
-1, . . .), the basic equilateral triangle itself can be used instead of the hexagon having three-fold axis rotational symmetry shown in FIG. 3(b). Instead, adjacent′
W, the poles are slightly offset from each other to prevent shorting with one distant electrode. According to this electrode shape, the charge transfer direction Y within the Vitil heron is 21-1°21-2. ..., the direction is perpendicular to the charge sweep side as shown by the arrow. Therefore, the width Wl of the mirror pole parallel to the charge sweep side increases by -1 along the transfer direction Y, and the width does not become narrower as in the case of the embodiment shown in FIG. 3(b). Therefore, an additional electric field that improves the transfer efficiency described above is ideally formed.

As mentioned above, it is possible that the effect is reduced due to the fact that the Fi contact electrodes have to be arranged slightly offset from each other, but this is also possible when considering the effect of concentration of transferred charges in the center as already explained. Its influence can be practically ignored. In this example, electrode 21-1.21
-2.21-3°21-4.21-5.21-6, electrodes 21-9.21-
10°21-11.21-12.21-13.21-1
The overall transfer direction Y” consisting of 4°... is electric 1ff
121-7° and 180° rotation through 21-8, but other angles of rotation, branching, and merging can also be applied to 8 implementation fI/
This can be done easily as in the case of IJ.

Figure 13 shows the 11th embodiment of the invention in bookcase 1.
FIG. This embodiment differs from the above-mentioned @1 to 10th embodiments in that the electrode 22 (2
2-1, 22-2, ...) is a parallelogram GHIJ (for electrode 22-1) instead of the conventional polygon (hexagon, triangle) having three-fold axis rotational symmetry. Two opposing sides GJ.

Diagonally opposite vertex G of HI, near iGK of ■, II.

The reason is that a quadrilateral KLIJ is used, which is cut diagonally except for the part. In filiE21-1, the charge transfer path is formed in the direction Y perpendicular to the charge sweep side JI, so the width Wl of the electrode parallel to the submission side JI is
Since Wl becomes larger along the transfer path from the apex K to LL', an additional electric field is formed which improves the transfer efficiency as described above. Moreover, the rectangular T, 'LIJ' that needs to be provided to prevent short circuit with one electrode placed
The width of the electrode is constant along the transfer path, and there is no fear that the applied electric field will be weakened as in the case of the electrode shape shown in FIG. 3, and the transfer efficiency can be improved. In this embodiment, the electrodes 22-1.22-2°22-3.22
-4, electrode 22-
8.22-9.22-10°22-11. The overall transfer direction Y'' consisting of... is the electrode 22-5.22 to 6.22.
This shows a case where the rotation is 180° through -7.
.

FIG. 14 shows, as a twelfth embodiment of the invention in bookcase 1, an example of dividing the flow of a transfer path using electrodes having this shape. Electrode 23-
The main charge transfer path consisting of electrodes 23-4, 23-5, 23-6. ...maybe the first
transfer path and electrodes 23-4'H235', 23 6'
The flow is divided into a second transfer path consisting of In addition, in the case of merging, it is sufficient if the path of the charges is reversed. In addition,
In order to divide the charge from the electrode 23-3 to the electrode 23-4 and the electrode 23-4' with a balance 17, and to prevent a short circuit with one electrode, the electrode 23-4 of the electrode 123-3 is
．． The lengths of the sides adjacent to the electrode 23-4' are made equal, and the electrode 23-4 is formed to be slightly larger than the electrode 23-4'. As described above, this slight difference in the length of the electrodes does not cause a decrease in transfer efficiency because the charges are concentrated in the center of the electrodes and transferred.

The invention of Bookcase 1 has been described above with reference to many embodiments. 1 The main point of this first invention is that the OTD electrode has a length parallel to the charge presentation side of the electrode.
lIiii! The electrode has a shape in which Wl (expressed as Wl) is larger at least in part along the direction perpendicular to the charge transfer side of the electrode (expressed as the charge transfer direction Y in the electrode in the above explanation). It is in the fact that Therefore, shapes other than those of the above-mentioned embodiments may be used as long as they meet this point.

FIG. 15(a) shows two-phase 0 of the first embodiment of the invention in bookcase 2.
A schematic plan view showing the electrode part of 0D, Figure (b) is a schematic XX to explain its structure and potential well.
'It is a sectional view.

A main electrode formed of a hexagonal shape having three-fold rotational symmetry used in the first embodiment of the invention of the bookcase 1 shown in FIG. (first electrode) 24, barrier electrode C, which is made of a rectangle whose side is the charge sweep side, and second electrode) 25.
-1.25-1゜24-2.25-2.24-3.25
-3... are arranged to form an overall transfer direction Y'. As shown in the figure (b), the barrier electrode 25 is formed through an insulating layer that is thicker than the main electrode, and has the same clock as the next adjacent main electrode (24-2 in the figure). When a pulse is applied, it operates to form a barrier f that prevents reverse flow of charges. In this case, the depth lφ1 of the potential well along the charge transfer direction Y in the electrode is indicated by a dotted line 28. That is, when the length of this barrier electrode in the transfer direction is narrowed, the potential is tilted in the transfer direction and a driving force is generated, so the addition of this barrier electrode does not reduce the charge transfer efficiency. Therefore, according to this embodiment, the electrode shape with improved transfer efficiency of the invention described in Bookcase 1 is
This can also be applied to phase 00D. Furthermore, by combining the electrodes of this example, the transfer path can be divided, merged, rotated,
Transfer can be performed even more easily.

FIG. 16 is a schematic plan view showing the electrode portion of the two-phase 00D according to the second embodiment of the invention in bookcase 2, and the electrodes of the embodiment shown in FIG. 15(a) are combined to form a transfer path. branching, merging,
It is rotated and transferred.

In this figure, 29 (29-1 to 29-14) is the first electrode (
main electrode) and 30 (30-1 to 3O-28) are second electrodes (barrier electrodes). φ8. φ2 is clock pulse s
Vssr,t? ? F level potential, 41.42 is input %
45146 is an output buffer, 43 is an intermediate output, and 44 is an intermediate input. The direction of charge transfer in the electrode is indicated by an arrow Y. The injected charge from input M31 is rotated by electrode 29-1 and transferred to bottom pole 29-2, where it is transferred to electrode 29-3.
and the electrode 29-13. At i:129-3, the charge injected from the input M'41 and the charge shunted from the charge 29-2 are combined to form the charges ＠29-4, 29-5,
29-6, 29-7 and an intermediate output 43, and then transferred to multiple stages (not shown) and rotated as an intermediate human power 44 via ll'iTi, 3Q, 16 to the electrode 29- 8 and further transferred to electrode 29-9.2
Transferred to 9-10.29-11.29-12.

A part of the flow is shunted at the electrode 29-12 to the electrode 30.
-23 and is output as output N'46. On the other hand, at the electrode 29-13, the charge shunted from the electrode 29-2 and the charge shunted from the electrode 29-12 are combined, rotated by the electrode 29-14, and outputted as an output N45 via the electrode 30-26. Ru. Note that electrode 30-2, 30-3
3,30-12.30 17,30 20.30:
The potentials of ' and 7 are held at the VSs potential to form a charge transfer prohibited region. As described above, according to this real example, it is possible to divide, merge, rotate, and transfer charges extremely easily.

FIG. 17 shows a wiring pattern diagram of the embodiment shown in FIG. 16. For example, the first point indicated by 41 lines made of polysilicon
It can be easily formed by using a two-layer wiring layer and a second layer shown by dotted lines.

Figure 18 shows the third fruit/J' of the invention in bookcase 2, the two-phase 0 example.
FIG. 3 is a schematic plan view showing an 0D electrode portion. This embodiment is similar to the equilateral triangular main electrodes 31 (31-1, 31
-2,...), a trapezoidal barrier rF-1,j (H32(32-・1
．． 32-2. ...) is set up. The reason why the barrier electrode is trapezoidal is to prevent short circuits with adjacent electrodes, and in areas where this is likely to occur, the barrier electrodes are not necessarily trapezoidal and may remain rectangular. In this embodiment, electrodes 31-t, 32-1, 31-2. :32-
2. . . , the electrodes 31-8.32-8.31-9.32-9. ...the overall transfer direction y, 7 is the electrode 31-7, 32-7
This example shows a case in which the rotation speed is 1800 times through the rotation, and it can be seen that the chip area can be used more effectively.

FIG. 19 is a schematic plan view showing the two-phase 00D electrode portion of the fourth embodiment of the invention in Bookcase 2. This example is the first
The electrode shape used in the eleventh embodiment of the invention in the bookcase 1 shown in FIG. 3 is slightly modified for two-phase use. In other words, in the electrode 22-1 in diagram M13,
The rectangular portion L'LIJ is used as a barrier electrode. The main electrode 33 (
33-1, 33-2, . 1,
34-2,...) are provided. This barrier electrode 34 is designed to prevent short circuits with adjacent electrodes.
The length of the side opposite to the sweep side is shorter than the length of the sweep side. In this embodiment, the overall transfer direction Y' consisting of the electrodes 33-1 to 33-9 is 33=10 to 33-1.
8 is an example of a case where the transfer direction is rotated by 180° in the overall transfer direction Y″.

FIG. 20 is a schematic plan view showing the two-phase 00D electrode portion of the fifth embodiment of the invention in Bookcase 2. This embodiment is different from the previous embodiments in which electrodes of the same shape are combined.This embodiment differs from the previous embodiments in that it combines electrodes of the same shape.It is a hexagonal main electrode with three-fold axis rotational symmetry of the above-mentioned first invention shown in FIG. 3(b). 35-3 is used to measure the diversion of a transfer path consisting of electrodes having the Chevron pattern proposed earlier. Therefore, the electrode 35-3 has three barrier electrodes 36-2, 36-3.36-5, and transfer path Yj consisting of the electrodes 35, 1.36-1.35-2, respectively, is connected to the electrode 35-4. Transfer path Y2 consisting of .36-4, 35-5 and electrode 35-6 + '36-6.35-
The matching is arranged so that the flow is divided into a transfer path Y consisting of 7. These three barrier electrodes 36-2.36-3.36
-5 transfers charges to the potential well at the bottom of the main electrode by using the gradient electric field formed by making the main electrode as small as possible as described above, so that the transfer efficiency is not inhibited. In addition, 35 (35-1, 35-2,
...) is the main electrode, 36 (36-1, 36-2°...
) is a barrier electrode.

Next, in order to merge the transfer paths in this combination, the transfer path Y in FIG. 20 may be changed to the same as the transfer path Y1. (Drawings omitted) FIG. 21 is a schematic plan view showing the two-phase 00D electrode portion of the sixth embodiment of the invention in bookcase 2. In this embodiment, the rotation of an electrode-shaped transfer path consisting of a Chevron pattern is carried out using a hexagonal electrode having a three-fold axis rotational symmetry and having a barrier electrode as a rotating part. In this figure, 37 (
37-1°37-2. ) is the main electrode, 38 (381
, 38-2, ゛) is a barrier electrode. Electrode 37-1
Transfer direction Y' consisting of ゜38-1.37-2.38-2
In the transfer direction Y', the electrodes 37-3, 38-3, 37-4.
38-4. Rotated 180° via 37-5. Here, the barrier electrode 3S-2゜38-5 is in the transfer direction Y', Y
The barrier electrode 38-
3.38-4 has the same shape as the first embodiment shown in FIG. 15(a).

As explained above in the fifth and sixth embodiments of the invention in Bookcase 2, by using a hexagonal electrode having a three-fold axis rotational symmetry and having a barrier electrode, a shape consisting of a Chevron pattern can be formed. Dividing, merging, and rotating the transfer path using electrodes can be easily performed without reducing charge transport efficiency. Note that the combination of electrodes is not limited to this example, and transfer paths of other shapes may be used, such that the length parallel to the charge sweep side of the electrode is partially parallel to the charge sweep side of the electrode. The main electrode may be combined with a main electrode having a shape that is larger in the vertical direction and having a barrier F41 adjacent to the charge injection side and/or the charge sweep side.

As mentioned above, according to the invention of Kogakure 2, the 2-phase drive 00D,
Using electrodes having a shape that improves charge transfer efficiency compared to conventional methods, the transfer path can be easily divided, merged, and rotated.

Note that although the explanation so far has mainly focused on OOD, it goes without saying that the same applies to BBD as well.

As explained above, the charge transfer device of the present invention uses electrodes with a new shape! 7% It is easy to divide, merge, and rotate the transfer path, and in addition to the conventional fringing electric field, an accelerating electric field based on the electrode structure is generated, which greatly improves the transfer efficiency. are doing.

[Brief explanation of the drawing]

FIG. 1(a) is a plan view showing the electrode part of a conventional three-phase 00D, FIG. 1(b) is a cross-sectional view along line AA', FIG. ) is a plan view of the main part showing the electrode part of the 3-phase 00D that Tsutsumi planned earlier, Figure 3 (b) is a diagram showing the potential wells on the AA' plane and 1373' plane, and Figure 3 (a) is the Kogakure A schematic plan view showing the quality and bar portion of the 3-phase 00D of the first embodiment of the invention in 1. Fig. 3 (b) is an explanatory diagram of one of the lightnings and the koshiki in Fig. 4 (a), and Fig. 4 ~
Fig. 14 is a schematic plan view showing the electrode portion of the second to 122nd phases 00D of the invention of Kogakure 1, and Fig. 14 (b) is a schematic plan view for explaining the structure and the depth 1φ1 of the potential well. XX' sectional view, Figure 16 is the second implementation of the invention of Kogakure 2
/11 Schematic plan view showing the electrode part of COD, No. 17
The figure is a wiring pattern diagram of the embodiment shown in FIG. 16, and FIGS. 18 to 21 are the third to sixth additions of the invention of Kogakure 2; Example 2
FIG. 3 is a schematic plan view showing an electrode portion of a phase CCD. 1.26... Semiconductor substrate, 2.27...
・Insulator layer, 3.11 (11-1,...), 12 (1
2-1°...), 13(13-1,...), 14(
14-L...), 15(15-1,...), 16(1
6-1°...), 17(17-1,...), 1B(
1,8-1゜...), 19(19-1,...),2
0 (20-1°...), 21 (21-1,...),
22 (22-1-. -), 23 (23-1,...)... Electrode, 4
, 12...Transfer area, 5, 13, 14.28...
・・・-・Depth of potential well 1φ1.24 (24
-1,...). 29 (29-1,...), 31 (31-1,...). 33(33-1,...), :3!5(:34)-t,-
). 37 (3'l-1,...)... Main electrode (first electrode), 25 (25-1,...), 30 (30-1,...
・・）. 32 (32-1,...), 34. (34-1,...)
. 36 (36-1,...), 38 (38-1,... door...barrier electrode (second electrode), 41.42...
...Input, 43...Intermediate output, 44...
...Intermediate input, 45°46...Output. (of) Kin (I)) 2M (Required) Figure 3 ↓ γ3 γ' Figure 8 Y'' Figure 11 Figure 12 Figure 13 Figure 14 (Required) Figure 15 Figure 18 Figure 21-317-1

Claims (7)

[Claims] (1) A plurality of electrodes are arranged on one main surface of a semiconductor substrate with an insulating layer interposed therebetween, and the length of the electrodes is parallel to the charge sweep side of the electrodes in at least a portion of the electrodes. 1. A charge transfer device characterized by having a shape that becomes larger along a direction perpendicular to a charge sweep side. (2) Claim (1) characterized in that the shape of the electrode is a polygon having three-fold rotational symmetry.
The charge transfer device described in section. (3) The shape of the electrode is a quadrilateral in which parts of a parallelogram excluding the vicinity of the vertices of two opposing sides are cut diagonally. Charge transfer device. (4) A plurality of electrodes arranged on one principal surface of a semiconductor substrate with an insulating layer interposed therebetween, wherein at least a portion of the electrode has a length parallel to the charge sweep side of the electrode. a first electrode having a shape that becomes sharper along the direction perpendicular to the charge submission side, and adjacent to the charge injection side and the charge sweep side of the first electrode; A charge transfer device comprising at least one set of electrodes combined with a formed second electrode. (5) The shape of the first electrode is a polygon having three-fold axis rotational symmetry.
4) The charge transfer device according to item 4). (6) The charge transfer device according to claim (4), wherein the first electrode has a right triangle shape. (7) The shape of the second electrode is formed to match the shape of an electrode provided adjacent to the second electrode. Charge transfer device.