JPH059513B2 - - Google Patents
Info
- Publication number
- JPH059513B2 JPH059513B2 JP20454884A JP20454884A JPH059513B2 JP H059513 B2 JPH059513 B2 JP H059513B2 JP 20454884 A JP20454884 A JP 20454884A JP 20454884 A JP20454884 A JP 20454884A JP H059513 B2 JPH059513 B2 JP H059513B2
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- wbn
- cbn
- substrate
- atoms
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 26
- 239000007789 gas Substances 0.000 claims description 25
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 13
- 229910052582 BN Inorganic materials 0.000 claims description 12
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 12
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000010408 film Substances 0.000 description 31
- 125000004429 atom Chemical group 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 238000010884 ion-beam technique Methods 0.000 description 9
- 238000001556 precipitation Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910052757 nitrogen Inorganic materials 0.000 description 6
- 238000001308 synthesis method Methods 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000003786 synthesis reaction Methods 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 238000007733 ion plating Methods 0.000 description 2
- -1 iron group metals Chemical class 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/342—Boron nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20454884A JPS6184379A (ja) | 1984-09-29 | 1984-09-29 | 高硬度窒化ホウ素膜の製法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20454884A JPS6184379A (ja) | 1984-09-29 | 1984-09-29 | 高硬度窒化ホウ素膜の製法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6184379A JPS6184379A (ja) | 1986-04-28 |
| JPH059513B2 true JPH059513B2 (fr) | 1993-02-05 |
Family
ID=16492329
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20454884A Granted JPS6184379A (ja) | 1984-09-29 | 1984-09-29 | 高硬度窒化ホウ素膜の製法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184379A (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2635021B2 (ja) * | 1985-09-26 | 1997-07-30 | 宣夫 御子柴 | 堆積膜形成法及びこれに用いる装置 |
| JPH0819523B2 (ja) * | 1986-11-22 | 1996-02-28 | 住友電気工業株式会社 | 高硬度窒化硼素の合成法 |
| US5264296A (en) * | 1989-12-06 | 1993-11-23 | General Motors Corporation | Laser depositon of crystalline boron nitride films |
| US5330611A (en) * | 1989-12-06 | 1994-07-19 | General Motors Corporation | Cubic boron nitride carbide films |
| US5227318A (en) * | 1989-12-06 | 1993-07-13 | General Motors Corporation | Method of making a cubic boron nitride bipolar transistor |
| US5232862A (en) * | 1990-07-16 | 1993-08-03 | General Motors Corporation | Method of fabricating a transistor having a cubic boron nitride layer |
| JPH08181075A (ja) * | 1994-12-26 | 1996-07-12 | Nec Corp | 薄膜堆積方法 |
| JP2847056B2 (ja) * | 1995-12-15 | 1999-01-13 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置用のプラズマイグナイタ |
| DE19900437B4 (de) * | 1999-01-11 | 2009-04-23 | Ehret, Hans-P. | Verfahren und Vorrichtung zur Ionenimplantation in Festkörpern und/oder zur Beschichtung von Festkörperoberflächen sowie die Verwendung von Verfahren und Vorrichtung |
-
1984
- 1984-09-29 JP JP20454884A patent/JPS6184379A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6184379A (ja) | 1986-04-28 |
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