JPH0587189B2 - - Google Patents
Info
- Publication number
- JPH0587189B2 JPH0587189B2 JP912788A JP912788A JPH0587189B2 JP H0587189 B2 JPH0587189 B2 JP H0587189B2 JP 912788 A JP912788 A JP 912788A JP 912788 A JP912788 A JP 912788A JP H0587189 B2 JPH0587189 B2 JP H0587189B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- thin layer
- titanium oxide
- barrier
- metal electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000004888 barrier function Effects 0.000 claims description 142
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 105
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 103
- 229910052751 metal Inorganic materials 0.000 claims description 61
- 239000002184 metal Substances 0.000 claims description 61
- 239000004065 semiconductor Substances 0.000 claims description 45
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 20
- 239000010936 titanium Substances 0.000 description 55
- 230000015556 catabolic process Effects 0.000 description 41
- 239000010408 film Substances 0.000 description 28
- 230000003647 oxidation Effects 0.000 description 17
- 238000007254 oxidation reaction Methods 0.000 description 17
- 230000002093 peripheral effect Effects 0.000 description 15
- 230000005684 electric field Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 7
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 6
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 238000001259 photo etching Methods 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 230000001590 oxidative effect Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001272 nitrous oxide Substances 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910003087 TiOx Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000001443 photoexcitation Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- HLLICFJUWSZHRJ-UHFFFAOYSA-N tioxidazole Chemical compound CCCOC1=CC=C2N=C(NC(=O)OC)SC2=C1 HLLICFJUWSZHRJ-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP912788A JPH01183848A (ja) | 1988-01-18 | 1988-01-18 | シヨツトキバリア半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP912788A JPH01183848A (ja) | 1988-01-18 | 1988-01-18 | シヨツトキバリア半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01183848A JPH01183848A (ja) | 1989-07-21 |
| JPH0587189B2 true JPH0587189B2 (enrdf_load_stackoverflow) | 1993-12-15 |
Family
ID=11711967
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP912788A Granted JPH01183848A (ja) | 1988-01-18 | 1988-01-18 | シヨツトキバリア半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01183848A (enrdf_load_stackoverflow) |
-
1988
- 1988-01-18 JP JP912788A patent/JPH01183848A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01183848A (ja) | 1989-07-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR910008712B1 (ko) | 쇼트키배리어 반도체장치 | |
| JPH0618276B2 (ja) | 半導体装置 | |
| JP3468571B2 (ja) | 半導体装置 | |
| JPH0587189B2 (enrdf_load_stackoverflow) | ||
| JPH01253270A (ja) | 半導体装置 | |
| CN104810409A (zh) | 一种碳化硅二极管及其制造方法 | |
| JPH0573350B2 (enrdf_load_stackoverflow) | ||
| JPH08316498A (ja) | ダイヤモンド半導体整流素子 | |
| JPH03185870A (ja) | 半導体装置 | |
| JPH01251656A (ja) | シヨツトキバリア半導体装置 | |
| JPH0573351B2 (enrdf_load_stackoverflow) | ||
| JPH0652787B2 (ja) | シヨツトキバリア半導体装置 | |
| KR20090118895A (ko) | 과도 전압 억제 회로 | |
| JP4066886B2 (ja) | ショットキ障壁を有する半導体素子及びその製造方法 | |
| JP2001308348A (ja) | 半導体サージ防護素子及びその製造方法、並びにそれを用いた電子回路 | |
| JPH01259558A (ja) | ショットキバリア半導体装置 | |
| JPH0618270B2 (ja) | シヨツトキバリア半導体装置 | |
| JPH07115211A (ja) | ショットキ半導体装置 | |
| JPH0618278B2 (ja) | シヨツトキバリア半導体装置 | |
| JPH0618272B2 (ja) | シヨツトキバリア半導体装置 | |
| CN117153890A (zh) | 肖特基势垒二极管 | |
| JP3139506B2 (ja) | ショットキ障壁を有する半導体装置の製造方法 | |
| JP2508060B2 (ja) | 光電変換装置 | |
| JPH0618274B2 (ja) | ショットキバリア半導体装置の製造方法 | |
| CN110600533A (zh) | 具有高雪崩耐量的碳化硅肖特基二极管器件及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |