JPH0587166B2 - - Google Patents
Info
- Publication number
- JPH0587166B2 JPH0587166B2 JP1072122A JP7212289A JPH0587166B2 JP H0587166 B2 JPH0587166 B2 JP H0587166B2 JP 1072122 A JP1072122 A JP 1072122A JP 7212289 A JP7212289 A JP 7212289A JP H0587166 B2 JPH0587166 B2 JP H0587166B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- mol
- dielectric
- leakage current
- amount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 claims description 39
- 239000003990 capacitor Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 239000000843 powder Substances 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 238000009413 insulation Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1072122A JPH02197108A (ja) | 1988-10-25 | 1989-03-23 | 薄膜コンデンサおよびその製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26976188 | 1988-10-25 | ||
| JP63-269761 | 1988-10-25 | ||
| JP1072122A JPH02197108A (ja) | 1988-10-25 | 1989-03-23 | 薄膜コンデンサおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02197108A JPH02197108A (ja) | 1990-08-03 |
| JPH0587166B2 true JPH0587166B2 (de) | 1993-12-15 |
Family
ID=17476783
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1072122A Granted JPH02197108A (ja) | 1988-10-25 | 1989-03-23 | 薄膜コンデンサおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02197108A (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2500611B2 (ja) * | 1993-06-17 | 1996-05-29 | 日本電気株式会社 | 高誘電率薄膜 |
| EP2426684A1 (de) | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Zusammensetzung zur Bildung einer dielektrischen Dünnschicht, Verfahren zur Bildung einer dielektrischen Dünnschicht und durch das Verfahren gebildete dielektrische Dünnschicht |
| EP2608219B1 (de) | 2011-12-20 | 2015-03-04 | Mitsubishi Materials Corporation | Zusammensetzung zur Bildung einer dielektrischen Dünnschicht, Verfahren zur Bildung einer dielektrischen Dünnschicht und durch das Verfahren gebildete dielektrische Dünnschicht |
-
1989
- 1989-03-23 JP JP1072122A patent/JPH02197108A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH02197108A (ja) | 1990-08-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
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|
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| EXPY | Cancellation because of completion of term | ||
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