JPH0586648B2 - - Google Patents

Info

Publication number
JPH0586648B2
JPH0586648B2 JP59060213A JP6021384A JPH0586648B2 JP H0586648 B2 JPH0586648 B2 JP H0586648B2 JP 59060213 A JP59060213 A JP 59060213A JP 6021384 A JP6021384 A JP 6021384A JP H0586648 B2 JPH0586648 B2 JP H0586648B2
Authority
JP
Japan
Prior art keywords
substrate
light
gas
transmission window
reaction chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59060213A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60202928A (ja
Inventor
Masahiko Hirose
Takaaki Kamimura
Masahiko Akyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP59060213A priority Critical patent/JPS60202928A/ja
Publication of JPS60202928A publication Critical patent/JPS60202928A/ja
Publication of JPH0586648B2 publication Critical patent/JPH0586648B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Drying Of Semiconductors (AREA)
JP59060213A 1984-03-28 1984-03-28 光励起反応装置 Granted JPS60202928A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59060213A JPS60202928A (ja) 1984-03-28 1984-03-28 光励起反応装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59060213A JPS60202928A (ja) 1984-03-28 1984-03-28 光励起反応装置

Publications (2)

Publication Number Publication Date
JPS60202928A JPS60202928A (ja) 1985-10-14
JPH0586648B2 true JPH0586648B2 (show.php) 1993-12-13

Family

ID=13135647

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59060213A Granted JPS60202928A (ja) 1984-03-28 1984-03-28 光励起反応装置

Country Status (1)

Country Link
JP (1) JPS60202928A (show.php)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60218474A (ja) * 1984-04-13 1985-11-01 Ushio Inc 成膜方法
JPH0682616B2 (ja) * 1984-10-11 1994-10-19 キヤノン株式会社 堆積膜形成方法
JPS62227089A (ja) * 1986-03-27 1987-10-06 Anelva Corp 表面処理方法および装置
JPS6380525A (ja) * 1986-09-24 1988-04-11 Semiconductor Energy Lab Co Ltd 被膜形成方法
JP2012149278A (ja) * 2011-01-17 2012-08-09 Mitsui Chemicals Inc シリコン含有膜の製造方法

Also Published As

Publication number Publication date
JPS60202928A (ja) 1985-10-14

Similar Documents

Publication Publication Date Title
US5803974A (en) Chemical vapor deposition apparatus
JP3148004B2 (ja) 光ｃｖｄ装置及びこれを用いた半導体装置の製造方法
JP4553995B2 (ja) リモートマイクロ波プラズマ装置
JP2013541849A (ja) Ｎａｎｏｃｕｒｅｕｖチャンバ用の石英シャワーヘッド
US4910436A (en) Wide area VUV lamp with grids and purging jets
JPS6245122A (ja) 処理装置
JPH0586648B2 (show.php)
US4732793A (en) Method and apparatus for laser-induced CVD
US5112647A (en) Apparatus for the preparation of a functional deposited film by means of photochemical vapor deposition process
CN101593669B (zh) 等离子体处理腔室中原位紫外线处理方法及应力氮化硅膜的形成方法
US4782267A (en) In-situ wide area vacuum ultraviolet lamp
US20090266711A1 (en) Substrate processing apparatus
JP2002083803A (ja) エッチング装置やアッシング装置といったようなドライプロセッシング装置
JPS61160926A (ja) 光励起薄膜形成装置
JP2608456B2 (ja) 薄膜形成装置
JPH05243138A (ja) 紫外線発生装置およびそれを用いた処理方法
JPS6227573A (ja) 光化学反応装置
JPS6227575A (ja) 成膜方法
JPS60182127A (ja) 光励起反応装置
JPH07169743A (ja) 表面処理方法
JPH0693454A (ja) グロー放電方法及びグロー放電装置
JPS6156278A (ja) 成膜方法
JPS61216318A (ja) 光ｃｖｄ装置
Suzuki et al. Silicon dioxide film deposited by photoassisted microwave plasma CVD using TEOS
JPH07105347B2 (ja) 光化学気相成長方法