JPH058571B2 - - Google Patents
Info
- Publication number
- JPH058571B2 JPH058571B2 JP57082476A JP8247682A JPH058571B2 JP H058571 B2 JPH058571 B2 JP H058571B2 JP 57082476 A JP57082476 A JP 57082476A JP 8247682 A JP8247682 A JP 8247682A JP H058571 B2 JPH058571 B2 JP H058571B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- forming
- film
- mask
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 46
- 229920005591 polysilicon Polymers 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 27
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 238000009792 diffusion process Methods 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 229920001187 thermosetting polymer Polymers 0.000 claims description 2
- 230000000903 blocking effect Effects 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- 229920001721 polyimide Polymers 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 6
- 238000007254 oxidation reaction Methods 0.000 description 6
- 238000000992 sputter etching Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- -1 Boron ions Chemical class 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8247682A JPS58200576A (ja) | 1982-05-18 | 1982-05-18 | Ｍｏｓ型電界効果トランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8247682A JPS58200576A (ja) | 1982-05-18 | 1982-05-18 | Ｍｏｓ型電界効果トランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58200576A JPS58200576A (ja) | 1983-11-22 |
| JPH058571B2 true JPH058571B2 (fr) | 1993-02-02 |
Family
ID=13775562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8247682A Granted JPS58200576A (ja) | 1982-05-18 | 1982-05-18 | Ｍｏｓ型電界効果トランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58200576A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2654258A1 (fr) * | 1989-11-03 | 1991-05-10 | Philips Nv | Procede pour fabriquer un dispositif a transistor mis ayant une electrode de grille en forme de "t" inverse. |
| US5177027A (en) * | 1990-08-17 | 1993-01-05 | Micron Technology, Inc. | Process for fabricating, on the edge of a silicon mesa, a MOSFET which has a spacer-shaped gate and a right-angled channel path |
| US5210435A (en) * | 1990-10-12 | 1993-05-11 | Motorola, Inc. | ITLDD transistor having a variable work function |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126957A (en) * | 1980-03-11 | 1981-10-05 | Toshiba Corp | Manufacture of semiconductor device |
-
1982
- 1982-05-18 JP JP8247682A patent/JPS58200576A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56126957A (en) * | 1980-03-11 | 1981-10-05 | Toshiba Corp | Manufacture of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58200576A (ja) | 1983-11-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4523213A (en) | MOS Semiconductor device and method of manufacturing the same | |
| US5818085A (en) | Body contact for a MOSFET device fabricated in an SOI layer | |
| US5093273A (en) | Method of manufacturing a semiconductor device | |
| JPS6249750B2 (fr) | ||
| US4520553A (en) | Process for manufacturing an integrated insulated-gate field-effect transistor | |
| JP2924763B2 (ja) | 半導体装置の製造方法 | |
| EP0197454B1 (fr) | Procédé de fabrication de dispositifs semi-conducteurs comportant des régions d'isolation | |
| US20060194393A1 (en) | Method of manufacturing semiconductor device | |
| JPS6318346B2 (fr) | ||
| JPH03138930A (ja) | ポリシリコン・ウィンドーパッドを有する電界効果トランジスタ | |
| JPH058571B2 (fr) | ||
| JPH098135A (ja) | 半導体装置の製造方法 | |
| JPS6025028B2 (ja) | 半導体装置の製造方法 | |
| JPS62285468A (ja) | Ｌｄｄ電界効果トランジスタの製造方法 | |
| JP2968548B2 (ja) | 半導体装置及びその製造方法 | |
| JPH05129335A (ja) | 縦型トランジスタの製造方法 | |
| JPS63241965A (ja) | 絶縁ゲ−ト型電界効果トランジスタおよびその製造方法 | |
| JP3380069B2 (ja) | Ｍｏｓ半導体装置の製造方法 | |
| JPS6039868A (ja) | 半導体装置の製造方法 | |
| JPS6057971A (ja) | 半導体装置の製造方法 | |
| JPS63129664A (ja) | 半導体装置の製造方法 | |
| JPS626664B2 (fr) | ||
| JPS6160577B2 (fr) | ||
| JPH03276680A (ja) | 半導体装置およびその製造方法 | |
| JPH02156542A (ja) | 半導体装置およびその製造方法 |