JPH0584670B2 - - Google Patents

Info

Publication number
JPH0584670B2
JPH0584670B2 JP61137377A JP13737786A JPH0584670B2 JP H0584670 B2 JPH0584670 B2 JP H0584670B2 JP 61137377 A JP61137377 A JP 61137377A JP 13737786 A JP13737786 A JP 13737786A JP H0584670 B2 JPH0584670 B2 JP H0584670B2
Authority
JP
Japan
Prior art keywords
wafer
spacer
heater
lid
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61137377A
Other languages
English (en)
Japanese (ja)
Other versions
JPS62293629A (ja
Inventor
Kazuyoshi Nasu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP13737786A priority Critical patent/JPS62293629A/ja
Publication of JPS62293629A publication Critical patent/JPS62293629A/ja
Publication of JPH0584670B2 publication Critical patent/JPH0584670B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP13737786A 1986-06-12 1986-06-12 半導体装置の加速寿命試験方法 Granted JPS62293629A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13737786A JPS62293629A (ja) 1986-06-12 1986-06-12 半導体装置の加速寿命試験方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13737786A JPS62293629A (ja) 1986-06-12 1986-06-12 半導体装置の加速寿命試験方法

Publications (2)

Publication Number Publication Date
JPS62293629A JPS62293629A (ja) 1987-12-21
JPH0584670B2 true JPH0584670B2 (enExample) 1993-12-02

Family

ID=15197261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13737786A Granted JPS62293629A (ja) 1986-06-12 1986-06-12 半導体装置の加速寿命試験方法

Country Status (1)

Country Link
JP (1) JPS62293629A (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2526252B2 (ja) * 1987-07-30 1996-08-21 東京エレクトロン株式会社 半導体素子の信頼性試験方法
US5539324A (en) * 1988-09-30 1996-07-23 Micron Technology, Inc. Universal wafer carrier for wafer level die burn-in
US7511520B2 (en) 1990-08-29 2009-03-31 Micron Technology, Inc. Universal wafer carrier for wafer level die burn-in
US5905382A (en) 1990-08-29 1999-05-18 Micron Technology, Inc. Universal wafer carrier for wafer level die burn-in
US5219765A (en) * 1990-09-12 1993-06-15 Hitachi, Ltd. Method for manufacturing a semiconductor device including wafer aging, probe inspection, and feeding back the results of the inspection to the device fabrication process
KR920022574A (ko) * 1991-05-03 1992-12-19 김광호 반도체 장치의 칩 수명테스트 장치
US5164661A (en) * 1991-05-31 1992-11-17 Ej Systems, Inc. Thermal control system for a semi-conductor burn-in
US5952840A (en) * 1996-12-31 1999-09-14 Micron Technology, Inc. Apparatus for testing semiconductor wafers

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6237172Y2 (enExample) * 1981-05-07 1987-09-22
JPS5974729U (ja) * 1982-11-10 1984-05-21 クラリオン株式会社 試料測定装置

Also Published As

Publication number Publication date
JPS62293629A (ja) 1987-12-21

Similar Documents

Publication Publication Date Title
US3573617A (en) Method and apparatus for testing packaged integrated circuits
DE102012205786B4 (de) Haltevorrichtung für Halbleitertest
JPH0584670B2 (enExample)
NL7712049A (nl) Elektrische verbindingsklem met verloopstuk voor hoogspanningskabels met papierisolatie en loodmantel en werkwijze voor het aanbrengen daarvan.
EP0290444A4 (en) APPARATUS AND METHODS FOR PERFORMING ACCELERATED AGING ON SEMICONDUCTOR DEVICES.
US20040070914A1 (en) Electrostatic device for holding an electronic component wafer
JPS53130975A (en) Method of and device for doping semiconductor substrate
IT1118308B (it) Procedimento e dispositivo per il posizionamento e mantenimento in condizione spianata di un wafer semiconduttore nel corso di fabbricazione
JPS5487477A (en) Device for etching and stripping semiconductor wafer
EP0263504A3 (en) Method for manufacturing high-breakdown voltage semiconductor device
JPS5610932A (en) Plasma treating apparatus
CN107505485A (zh) 接触探针、半导体元件试验装置及半导体元件试验方法
KR101570767B1 (ko) 내전압 시험용 단자 접속장치
JPS57115843A (en) Testing device for wafer
JPS5468177A (en) Manufacture for semiconductor device
US12442813B2 (en) Electrode substrate, measuring device, removal tool, and measuring method
JPS6331390Y2 (enExample)
JPS57201041A (en) Testing method for semiconductor wafer
JPH0439949A (ja) 半導体装置のテスト治具
SG87688G (en) Apparatus and methods for effecting a burn-in procedure on semiconductor devices
JPH0582972B2 (enExample)
JPS63278358A (ja) Ｉｃ用ソケット
JPS61247045A (ja) 集積回路装置のエ−ジング装置
JPH0726714Y2 (ja) Ｉｃソケット
JPS63124439A (ja) 半導体装置の製造方法