JPH0582964B2 - - Google Patents
Info
- Publication number
- JPH0582964B2 JPH0582964B2 JP60195630A JP19563085A JPH0582964B2 JP H0582964 B2 JPH0582964 B2 JP H0582964B2 JP 60195630 A JP60195630 A JP 60195630A JP 19563085 A JP19563085 A JP 19563085A JP H0582964 B2 JPH0582964 B2 JP H0582964B2
- Authority
- JP
- Japan
- Prior art keywords
- intermediate layer
- gallium arsenide
- phosphide
- gallium
- main surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 70
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 19
- 239000013078 crystal Substances 0.000 claims description 19
- 229910052710 silicon Inorganic materials 0.000 claims description 19
- 239000010703 silicon Substances 0.000 claims description 19
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 6
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 claims description 5
- 229910005540 GaP Inorganic materials 0.000 claims description 2
- 238000004381 surface treatment Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 68
- 239000004065 semiconductor Substances 0.000 description 11
- 235000012431 wafers Nutrition 0.000 description 10
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19563085A JPS6258616A (ja) | 1985-09-03 | 1985-09-03 | 砒素化ガリウムエピタキシヤルウエハ及びその製造方法 |
| EP19860112178 EP0214610B1 (en) | 1985-09-03 | 1986-09-03 | Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
| DE8686112178T DE3676019D1 (de) | 1985-09-03 | 1986-09-03 | Epitaktische gallium-arsenid-halbleiterscheibe und verfahren zu ihrer herstellung. |
| CA000517386A CA1292550C (en) | 1985-09-03 | 1986-09-03 | Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
| US07/325,115 US4928154A (en) | 1985-09-03 | 1989-03-20 | Epitaxial gallium arsenide semiconductor on silicon substrate with gallium phosphide and superlattice intermediate layers |
| US07/483,364 US4963508A (en) | 1985-09-03 | 1990-02-22 | Method of making an epitaxial gallium arsenide semiconductor wafer using a strained layer superlattice |
| CA000616160A CA1322040C (en) | 1985-09-03 | 1991-09-11 | Epitaxial gallium arsenide semiconductor wafer and method of producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19563085A JPS6258616A (ja) | 1985-09-03 | 1985-09-03 | 砒素化ガリウムエピタキシヤルウエハ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6258616A JPS6258616A (ja) | 1987-03-14 |
| JPH0582964B2 true JPH0582964B2 (ko) | 1993-11-24 |
Family
ID=16344358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19563085A Granted JPS6258616A (ja) | 1985-09-03 | 1985-09-03 | 砒素化ガリウムエピタキシヤルウエハ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6258616A (ko) |
-
1985
- 1985-09-03 JP JP19563085A patent/JPS6258616A/ja active Granted
Non-Patent Citations (4)
| Title |
|---|
| ELECTORON LETT=1984 * |
| ELECTRON.LETT=1984 * |
| JAPAN J APPL PHYS=1985 * |
| JAPAN.J.APPL.PHYS=1985 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6258616A (ja) | 1987-03-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |