JPH0581064B2 - - Google Patents

Info

Publication number
JPH0581064B2
JPH0581064B2 JP61301963A JP30196386A JPH0581064B2 JP H0581064 B2 JPH0581064 B2 JP H0581064B2 JP 61301963 A JP61301963 A JP 61301963A JP 30196386 A JP30196386 A JP 30196386A JP H0581064 B2 JPH0581064 B2 JP H0581064B2
Authority
JP
Japan
Prior art keywords
substrate bias
substrate
power supply
semiconductor memory
supply line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61301963A
Other languages
English (en)
Japanese (ja)
Other versions
JPS63153852A (ja
Inventor
Hiroyuki Yamazaki
Masaki Kumanotani
Isato Ikeda
Kazuhiro Tsukamoto
Hideto Hidaka
Yasuhiro Konishi
Katsumi Dosaka
Hideji Myatake
Masaki Shimoda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP61301963A priority Critical patent/JPS63153852A/ja
Publication of JPS63153852A publication Critical patent/JPS63153852A/ja
Publication of JPH0581064B2 publication Critical patent/JPH0581064B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/215—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge pumping or biasing substrates

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP61301963A 1986-12-17 1986-12-17 半導体記憶装置 Granted JPS63153852A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61301963A JPS63153852A (ja) 1986-12-17 1986-12-17 半導体記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61301963A JPS63153852A (ja) 1986-12-17 1986-12-17 半導体記憶装置

Publications (2)

Publication Number Publication Date
JPS63153852A JPS63153852A (ja) 1988-06-27
JPH0581064B2 true JPH0581064B2 (enrdf_load_stackoverflow) 1993-11-11

Family

ID=17903230

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61301963A Granted JPS63153852A (ja) 1986-12-17 1986-12-17 半導体記憶装置

Country Status (1)

Country Link
JP (1) JPS63153852A (enrdf_load_stackoverflow)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02112274A (ja) * 1988-10-21 1990-04-24 Hitachi Ltd 半導体記憶装置
JP2978507B2 (ja) * 1989-06-26 1999-11-15 日本電気株式会社 半導体記憶装置
JP6384210B2 (ja) 2014-09-02 2018-09-05 株式会社ソシオネクスト 半導体装置

Also Published As

Publication number Publication date
JPS63153852A (ja) 1988-06-27

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