JPH0576794B2 - - Google Patents

Info

Publication number
JPH0576794B2
JPH0576794B2 JP59019602A JP1960284A JPH0576794B2 JP H0576794 B2 JPH0576794 B2 JP H0576794B2 JP 59019602 A JP59019602 A JP 59019602A JP 1960284 A JP1960284 A JP 1960284A JP H0576794 B2 JPH0576794 B2 JP H0576794B2
Authority
JP
Japan
Prior art keywords
layer
type
active layer
semiconductor
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP59019602A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60164379A (ja
Inventor
Mitsunori Sugimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP1960284A priority Critical patent/JPS60164379A/ja
Publication of JPS60164379A publication Critical patent/JPS60164379A/ja
Publication of JPH0576794B2 publication Critical patent/JPH0576794B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP1960284A 1984-02-06 1984-02-06 半導体レ−ザ− Granted JPS60164379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1960284A JPS60164379A (ja) 1984-02-06 1984-02-06 半導体レ−ザ−

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1960284A JPS60164379A (ja) 1984-02-06 1984-02-06 半導体レ−ザ−

Publications (2)

Publication Number Publication Date
JPS60164379A JPS60164379A (ja) 1985-08-27
JPH0576794B2 true JPH0576794B2 (cs) 1993-10-25

Family

ID=12003754

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1960284A Granted JPS60164379A (ja) 1984-02-06 1984-02-06 半導体レ−ザ−

Country Status (1)

Country Link
JP (1) JPS60164379A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5467364A (en) * 1992-02-05 1995-11-14 Mitsui Petrochemical Industries, Ltd. Semiconductor laser element and laser device using the same element
USRE36431E (en) * 1992-02-05 1999-12-07 Mitsui Chemicals, Inc. Semiconductor laser element and laser device using the same element
CA2138912C (en) * 1993-12-24 1999-05-04 Shoji Ishizaka Semiconductor laser device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1137605A (en) * 1979-01-15 1982-12-14 Donald R. Scifres High output power laser

Also Published As

Publication number Publication date
JPS60164379A (ja) 1985-08-27

Similar Documents

Publication Publication Date Title
JP3189791B2 (ja) 半導体レーザ
JPH05102604A (ja) 半導体レーザ装置
US4752933A (en) Semiconductor laser
JPH0546115B2 (cs)
JPH0315356B2 (cs)
JPH08307003A (ja) 半導体レーザ装置
JPH0576794B2 (cs)
JP2758598B2 (ja) 半導体レーザ
JP2679974B2 (ja) 半導体レーザ装置
JP3033333B2 (ja) 半導体レーザ素子
JPS59227177A (ja) 半導体レ−ザ装置
JPS59145590A (ja) 半導体レ−ザ装置
JPH0467354B2 (cs)
JP3006797B2 (ja) 半導体レーザ
JPS6286782A (ja) 量子井戸レ−ザ
JPS6356977A (ja) 半導体レ−ザ
JPH0467353B2 (cs)
JPH07122811A (ja) 半導体レーザ素子
JPH0728093B2 (ja) 半導体レ−ザ素子
JPH05343789A (ja) 半導体分布帰還型レーザ装置および半導体素子の製造方法
JPH05136528A (ja) 半導体レーザ素子及びその駆動方法
JPH05343813A (ja) 量子井戸構造半導体レーザ装置及び製造方法
JP2527024B2 (ja) 半導体レ―ザ
JPS60132381A (ja) 半導体レ−ザ装置
JP3189900B2 (ja) 半導体レーザ素子