JPH0576770B2 - - Google Patents

Info

Publication number
JPH0576770B2
JPH0576770B2 JP58118905A JP11890583A JPH0576770B2 JP H0576770 B2 JPH0576770 B2 JP H0576770B2 JP 58118905 A JP58118905 A JP 58118905A JP 11890583 A JP11890583 A JP 11890583A JP H0576770 B2 JPH0576770 B2 JP H0576770B2
Authority
JP
Japan
Prior art keywords
region
mos transistor
floating diffusion
channel
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58118905A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6010663A (ja
Inventor
Masaharu Hamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP58118905A priority Critical patent/JPS6010663A/ja
Publication of JPS6010663A publication Critical patent/JPS6010663A/ja
Publication of JPH0576770B2 publication Critical patent/JPH0576770B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Semiconductor Memories (AREA)
JP58118905A 1983-06-30 1983-06-30 Ｃｃｄ電荷転送素子 Granted JPS6010663A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58118905A JPS6010663A (ja) 1983-06-30 1983-06-30 Ｃｃｄ電荷転送素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58118905A JPS6010663A (ja) 1983-06-30 1983-06-30 Ｃｃｄ電荷転送素子

Publications (2)

Publication Number Publication Date
JPS6010663A JPS6010663A (ja) 1985-01-19
JPH0576770B2 true JPH0576770B2 (fr) 1993-10-25

Family

ID=14748065

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58118905A Granted JPS6010663A (ja) 1983-06-30 1983-06-30 Ｃｃｄ電荷転送素子

Country Status (1)

Country Link
JP (1) JPS6010663A (fr)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61227294A (ja) * 1985-03-30 1986-10-09 Toshiba Corp 半導体メモリ
JPS61184789A (ja) * 1985-02-13 1986-08-18 Toshiba Corp 半導体メモリセル
JPS61227296A (ja) * 1985-03-30 1986-10-09 Toshiba Corp 半導体メモリ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683075A (en) * 1979-12-10 1981-07-07 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type field-effect transistor circuit device
JPS56162875A (en) * 1980-05-19 1981-12-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5683075A (en) * 1979-12-10 1981-07-07 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type field-effect transistor circuit device
JPS56162875A (en) * 1980-05-19 1981-12-15 Nippon Telegr & Teleph Corp <Ntt> Semiconductor device

Also Published As

Publication number Publication date
JPS6010663A (ja) 1985-01-19

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