JPH0575170B2 - - Google Patents
Info
- Publication number
- JPH0575170B2 JPH0575170B2 JP29521185A JP29521185A JPH0575170B2 JP H0575170 B2 JPH0575170 B2 JP H0575170B2 JP 29521185 A JP29521185 A JP 29521185A JP 29521185 A JP29521185 A JP 29521185A JP H0575170 B2 JPH0575170 B2 JP H0575170B2
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- collector
- layer
- base
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 claims description 20
- 238000000605 extraction Methods 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 42
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 5
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29521185A JPS62152165A (ja) | 1985-12-25 | 1985-12-25 | バイポ−ラトランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29521185A JPS62152165A (ja) | 1985-12-25 | 1985-12-25 | バイポ−ラトランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62152165A JPS62152165A (ja) | 1987-07-07 |
| JPH0575170B2 true JPH0575170B2 (fr) | 1993-10-20 |
Family
ID=17817639
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29521185A Granted JPS62152165A (ja) | 1985-12-25 | 1985-12-25 | バイポ−ラトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62152165A (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5138408A (en) * | 1988-04-15 | 1992-08-11 | Nec Corporation | Resonant tunneling hot carrier transistor |
| US5012318A (en) * | 1988-09-05 | 1991-04-30 | Nec Corporation | Hybrid semiconductor device implemented by combination of heterojunction bipolar transistor and field effect transistor |
| JP2687519B2 (ja) * | 1988-12-06 | 1997-12-08 | 日本電気株式会社 | 半導体装置及びその製造方法 |
| JP2770583B2 (ja) * | 1991-02-22 | 1998-07-02 | 日本電気株式会社 | コレクタトップ型ヘテロ接合バイポーラトランジスタの製造方法 |
-
1985
- 1985-12-25 JP JP29521185A patent/JPS62152165A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62152165A (ja) | 1987-07-07 |
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