JPH0453107B2 - - Google Patents
Info
- Publication number
- JPH0453107B2 JPH0453107B2 JP13640785A JP13640785A JPH0453107B2 JP H0453107 B2 JPH0453107 B2 JP H0453107B2 JP 13640785 A JP13640785 A JP 13640785A JP 13640785 A JP13640785 A JP 13640785A JP H0453107 B2 JPH0453107 B2 JP H0453107B2
- Authority
- JP
- Japan
- Prior art keywords
- base
- layer
- emitter
- collector
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000605 extraction Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 31
- 238000005530 etching Methods 0.000 description 6
- 238000001451 molecular beam epitaxy Methods 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13640785A JPS61294859A (ja) | 1985-06-21 | 1985-06-21 | バイポ−ラトランジスタの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13640785A JPS61294859A (ja) | 1985-06-21 | 1985-06-21 | バイポ−ラトランジスタの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61294859A JPS61294859A (ja) | 1986-12-25 |
| JPH0453107B2 true JPH0453107B2 (fr) | 1992-08-25 |
Family
ID=15174440
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13640785A Granted JPS61294859A (ja) | 1985-06-21 | 1985-06-21 | バイポ−ラトランジスタの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61294859A (fr) |
-
1985
- 1985-06-21 JP JP13640785A patent/JPS61294859A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61294859A (ja) | 1986-12-25 |
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