JPH0573260B2 - - Google Patents
Info
- Publication number
- JPH0573260B2 JPH0573260B2 JP62091408A JP9140887A JPH0573260B2 JP H0573260 B2 JPH0573260 B2 JP H0573260B2 JP 62091408 A JP62091408 A JP 62091408A JP 9140887 A JP9140887 A JP 9140887A JP H0573260 B2 JPH0573260 B2 JP H0573260B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- wiring layer
- aluminum
- insulating layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 77
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 12
- 229910004298 SiO 2 Inorganic materials 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 9
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000005360 phosphosilicate glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000010306 acid treatment Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000002048 anodisation reaction Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9140887A JPS63257247A (ja) | 1987-04-14 | 1987-04-14 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9140887A JPS63257247A (ja) | 1987-04-14 | 1987-04-14 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63257247A JPS63257247A (ja) | 1988-10-25 |
| JPH0573260B2 true JPH0573260B2 (US07223432-20070529-C00017.png) | 1993-10-14 |
Family
ID=14025553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9140887A Granted JPS63257247A (ja) | 1987-04-14 | 1987-04-14 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63257247A (US07223432-20070529-C00017.png) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192183A (US07223432-20070529-C00017.png) * | 1975-02-10 | 1976-08-12 | ||
| JPS57176747A (en) * | 1981-04-23 | 1982-10-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS58197748A (ja) * | 1982-05-13 | 1983-11-17 | Nec Corp | 半導体装置の製造方法 |
| JPS604240A (ja) * | 1983-06-22 | 1985-01-10 | Nec Corp | 半導体装置 |
-
1987
- 1987-04-14 JP JP9140887A patent/JPS63257247A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5192183A (US07223432-20070529-C00017.png) * | 1975-02-10 | 1976-08-12 | ||
| JPS57176747A (en) * | 1981-04-23 | 1982-10-30 | Fujitsu Ltd | Manufacture of semiconductor device |
| JPS58197748A (ja) * | 1982-05-13 | 1983-11-17 | Nec Corp | 半導体装置の製造方法 |
| JPS604240A (ja) * | 1983-06-22 | 1985-01-10 | Nec Corp | 半導体装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63257247A (ja) | 1988-10-25 |
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