JPH0573068B2 - - Google Patents
Info
- Publication number
- JPH0573068B2 JPH0573068B2 JP61029310A JP2931086A JPH0573068B2 JP H0573068 B2 JPH0573068 B2 JP H0573068B2 JP 61029310 A JP61029310 A JP 61029310A JP 2931086 A JP2931086 A JP 2931086A JP H0573068 B2 JPH0573068 B2 JP H0573068B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- insulating film
- high concentration
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2931086A JPS62188273A (ja) | 1986-02-13 | 1986-02-13 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2931086A JPS62188273A (ja) | 1986-02-13 | 1986-02-13 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS62188273A JPS62188273A (ja) | 1987-08-17 |
JPH0573068B2 true JPH0573068B2 (enrdf_load_stackoverflow) | 1993-10-13 |
Family
ID=12272646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2931086A Granted JPS62188273A (ja) | 1986-02-13 | 1986-02-13 | 半導体装置およびその製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62188273A (enrdf_load_stackoverflow) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05121737A (ja) * | 1991-07-15 | 1993-05-18 | Nec Corp | 半導体装置の製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53118376A (en) * | 1977-03-25 | 1978-10-16 | Nec Corp | Manufacture of semiconductor device |
-
1986
- 1986-02-13 JP JP2931086A patent/JPS62188273A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS62188273A (ja) | 1987-08-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4908681A (en) | Insulated gate field effect transistor with buried layer | |
US4906588A (en) | Enclosed buried channel transistor | |
US6924529B2 (en) | MOS transistor having a recessed gate electrode and fabrication method thereof | |
US5355011A (en) | Insulated gate field effect transistor having LDD structure and method of making the same including a channel stop having a peak impurity concentration, the channel stop provided below a channel region | |
US5641982A (en) | High voltage mosfet with an improved channel stopper structure | |
US5623154A (en) | Semiconductor device having triple diffusion | |
JPH03262130A (ja) | 半導体素子の製造方法 | |
JP2808871B2 (ja) | Mos型半導体素子の製造方法 | |
JPS63177471A (ja) | Mos形半導体装置 | |
JPH02280342A (ja) | M0s型半導体装置及びその製造方法 | |
JPS6123669B2 (enrdf_load_stackoverflow) | ||
JPH0573068B2 (enrdf_load_stackoverflow) | ||
USRE44430E1 (en) | PMOS depletable drain extension made from NMOS dual depletable drain extensions | |
JPS61210673A (ja) | Mis型半導体装置 | |
JPS6118349B2 (enrdf_load_stackoverflow) | ||
US6285059B1 (en) | Structure for laterally diffused metal-oxide semiconductor | |
JPS62141754A (ja) | 高耐圧半導体装置 | |
JP2507981B2 (ja) | 相補形misトランジスタの製造方法 | |
JPH03169080A (ja) | 電界効果型トランジスタ | |
JPS6320382B2 (enrdf_load_stackoverflow) | ||
JPH01286367A (ja) | 縦型電界効果トランジスタ | |
JPS61203679A (ja) | 高耐圧mosトランジスタ | |
JP2765142B2 (ja) | 半導体装置の製造方法 | |
JPH03261176A (ja) | 二重拡散mosトランジスタ | |
JPH04142039A (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
LAPS | Cancellation because of no payment of annual fees |