JPS6118349B2 - - Google Patents

Info

Publication number
JPS6118349B2
JPS6118349B2 JP50151824A JP15182475A JPS6118349B2 JP S6118349 B2 JPS6118349 B2 JP S6118349B2 JP 50151824 A JP50151824 A JP 50151824A JP 15182475 A JP15182475 A JP 15182475A JP S6118349 B2 JPS6118349 B2 JP S6118349B2
Authority
JP
Japan
Prior art keywords
gate
electrode
impurity region
gate electrode
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP50151824A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5275987A (en
Inventor
Hiroo Masuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50151824A priority Critical patent/JPS5275987A/ja
Publication of JPS5275987A publication Critical patent/JPS5275987A/ja
Publication of JPS6118349B2 publication Critical patent/JPS6118349B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/911Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using passive elements as protective elements

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP50151824A 1975-12-22 1975-12-22 Gate protecting device Granted JPS5275987A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50151824A JPS5275987A (en) 1975-12-22 1975-12-22 Gate protecting device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50151824A JPS5275987A (en) 1975-12-22 1975-12-22 Gate protecting device

Publications (2)

Publication Number Publication Date
JPS5275987A JPS5275987A (en) 1977-06-25
JPS6118349B2 true JPS6118349B2 (enrdf_load_stackoverflow) 1986-05-12

Family

ID=15527107

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50151824A Granted JPS5275987A (en) 1975-12-22 1975-12-22 Gate protecting device

Country Status (1)

Country Link
JP (1) JPS5275987A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3425446B1 (de) 2017-07-06 2019-10-30 Carl Zeiss Vision International GmbH Verfahren, vorrichtung und computerprogramm zum virtuellen anpassen einer brillenfassung

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5494286A (en) * 1978-01-09 1979-07-25 Nec Corp Insulated gate field effect semiconductor device with input protecting device
EP0087155B1 (en) * 1982-02-22 1991-05-29 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
JPS61292965A (ja) * 1985-06-21 1986-12-23 Hitachi Ltd 半導体集積回路装置
JPS62101067A (ja) * 1985-10-28 1987-05-11 Nec Corp 入力保護装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3425446B1 (de) 2017-07-06 2019-10-30 Carl Zeiss Vision International GmbH Verfahren, vorrichtung und computerprogramm zum virtuellen anpassen einer brillenfassung

Also Published As

Publication number Publication date
JPS5275987A (en) 1977-06-25

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